Nanoscale multistate resistive switching in WO3 through scanning probe induced proton evolution

Proton Conducting Neuromorphic Materials and Devices

Neuromorphic computing and artificial intelligence hardware generally aims to emulate features found in biological neural circuit components and to enable the development of energy-efficient machines. In the biological brain, ionic currents and temporal concentration gradients control information flow and storage. It is therefore of interest to examine materials and devices for neuromorphic computing wherein ionic and electronic currents can propagate. Protons being mobile under an external electric field offers a compelling avenue for facilitating biological functionalities in artificial synapses and neurons. In this review, we first highlight the interesting biological analog of protons as neurotransmitters in various animals. We then discuss the experimental approaches and mechanisms of proton doping in various classes of inorganic and organic proton-conducting materials for the advancement of neuromorphic architectures. Since hydrogen is among the lightest of elements, characterization in a solid matrix requires advanced techniques. We review powerful synchrotron-based spectroscopic techniques for characterizing hydrogen doping in various materials as well as complementary scattering techniques to detect hydrogen. First-principles calculations are then discussed as they help provide an understanding of proton migration and electronic structure modification. Outstanding scientific challenges to further our understanding of proton doping and its use in emerging neuromorphic electronics are pointed out.

Metal-organic framework-derived metal oxides for resistive gas sensing: a review

Gas sensors with exceptional sensitivity and selectivity are vital in the real-time surveillance of noxious and harmful gases. Despite this, traditional gas sensing materials still face a number of challenges, such as poor selectivity, insufficient detection limits, and short lifespan. Metal oxides, which are derived from metal-organic framework materials (MOFs), have been widely used in the field of gas sensors because they have a high surface area and large pore volume. Incorporating metal oxides derived from MOFs into gas sensors can improve their sensitivity and selectivity, thus opening up new possibilities for the development of innovative, high-performance gas sensors. This article examines the gas sensing process of metal oxide semiconductors (MOS), evaluates the advances made in the research of different structures of MOF-derived metal oxides in resistive gas sensors, and provides information on their potential applications and future advancements.