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Han H, Zhang B, Zhang Z, Wang Y, Liu C, Singh AK, Song A, Li Y, Jin J, Zhang J. Light-Triggered Anti-ambipolar Transistor Based on an In-Plane Lateral Homojunction. NANO LETTERS 2024. [PMID: 38954477 DOI: 10.1021/acs.nanolett.4c01679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Currently, the construction of anti-ambipolar transistors (AATs) is primarily based on asymmetric heterostructures, which are challenging to fabricate. AATs used for photodetection are accompanied by dark currents that prove difficult to suppress, resulting in reduced sensitivity. This work presents light-triggered AATs based on an in-plane lateral WSe2 homojunction without van der Waals heterostructures. In this device, the WSe2 channel is partially electrically controlled by the back gate due to the screening effect of the bottom electrode, resulting in a homojunction that is dynamically modulated with gate voltage, exhibiting electrostatically reconfigurable and light-triggered anti-ambipolar behaviors. It exhibits high responsivity (188 A/W) and detectivity (8.94 × 1014 Jones) under 635 nm illumination with a low power density of 0.23 μW/cm2, promising a new approach to low-power, high-performance photodetectors. Moreover, the device demonstrates efficient self-driven photodetection. Furthermore, ternary inverters are realized using monolithic WSe2, simplifying the manufacturing of multivalued logic devices.
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Affiliation(s)
- Hecheng Han
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Baoqing Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Zihao Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Yiming Wang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China
| | - Arun Kumar Singh
- Department of Electronics and Communications Engineering, Punjab Engineering College (Deemed to be University), Chandigarh 160012, India
| | - Aimin Song
- Department of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, United Kingdom
- Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yuxiang Li
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
| | - Jidong Jin
- Department of Photonics and Nanoelectronics, Hanyang University, Ansan 15588, Republic of Korea
| | - Jiawei Zhang
- Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuit, Shandong University, Jinan 250101, China
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2
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Zhu M, Xia K, Wang H, Li S, Zhang M, Wang H, Liang X, Chen K, Zhang Y. Growth of 1D Carbon Nanotube@Perovskite Core-Shell van der Waals Heterostructures through Chemical Vapor Deposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401681. [PMID: 38923771 DOI: 10.1002/smll.202401681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2024] [Revised: 05/21/2024] [Indexed: 06/28/2024]
Abstract
Perovskite is an emerging material with immense potential in the field of optoelectronics. 1D perovskite nanowires are crucial building blocks for the development of optoelectronic devices. However, producing perovskite nanowires with high quality and controlled alignment is challenging. In this study, the direct epitaxial growth of perovskite on oriented carbon nanotube (CNT) templates is presented through a chemical vapor deposition method. The deposition process of lead iodide and methylammonium iodide is systematically investigated, and a layer plus island growth mechanism is proposed to interpret the experimental observations. The aligned long CNTs serve as 1D templates and allow the growth of CNT@perovskite core-shell heterostructure with a high aspect ratio to withstand large deformation. The obtained 1D perovskite materials can be easily manipulated and transferred, enabling the facile preparation of microscale flexible devices. For proof of concept, a photodetector based on an individual CNT@methylammonium lead iodide heterostructure is fabricated. This work provides a new approach to prepare 1D hetero-nanostructure and may inspire the design of novel flexible nanophotodetectors.
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Affiliation(s)
- Mengjia Zhu
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Kailun Xia
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Haomin Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Shuo Li
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Mingchao Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Huimin Wang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Xiaoping Liang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
| | - Ke Chen
- Center for the Physics of Low-Dimensional Materials, School of Future Technology, School of Physics and Electronics, Henan University, Kaifeng, 475004, China
| | - Yingying Zhang
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, P. R. China
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3
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Riisnaes KJ, Alshehri M, Leontis I, Mastria R, Lam HT, De Marco L, Coriolano A, Craciun MF, Russo S. 2D Hybrid Perovskite Sensors for Environmental and Healthcare Monitoring. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31399-31406. [PMID: 38836799 PMCID: PMC11195008 DOI: 10.1021/acsami.4c02966] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/22/2024] [Revised: 05/24/2024] [Accepted: 05/28/2024] [Indexed: 06/06/2024]
Abstract
Layered perovskites, a novel class of two-dimensional (2D) layered materials, exhibit versatile photophysical properties of great interest in photovoltaics and optoelectronics. However, their instability to environmental factors, particularly water, has limited their utility. In this study, we introduce an innovative solution to the problem by leveraging the unique properties of natural beeswax as a protective coating of 2D-fluorinated phenylethylammonium lead iodide perovskite. These photodetectors show outstanding figures of merit, such as a responsivity of >2200 A/W and a detectivity of 2.4 × 1018 Jones. The hydrophobic nature of beeswax endows the 2D perovskite sensors with an unprecedented resilience to prolonged immersion in contaminated water, and it increases the lifespan of devices to a period longer than one year. At the same time, the biocompatibility of the beeswax and its self-cleaning properties make it possible to use the very same turbidity sensors for healthcare in photoplethysmography and monitor the human heartbeat with clear systolic and diastolic signatures. Beeswax-enabled multipurpose optoelectronics paves the way to sustainable electronics by ultimately reducing the need for multiple components.
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Affiliation(s)
- Karl Jonas Riisnaes
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
| | - Mohammed Alshehri
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
| | - Ioannis Leontis
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
| | - Rosanna Mastria
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
- Institute
of Nanotechnology, Via
Monteroni, Lecce 73100, Italy
| | - Hoi Tung Lam
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
| | - Luisa De Marco
- Institute
of Nanotechnology, Via
Monteroni, Lecce 73100, Italy
| | | | - Monica Felicia Craciun
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
| | - Saverio Russo
- Centre
for Graphene Science, College of Engineering, Mathematics and Physical
Sciences, University of Exeter, Exeter EX4 4QL, U.K.
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4
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Yu X, Ji Y, Shen X, Le X. Progress in Advanced Infrared Optoelectronic Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:845. [PMID: 38786801 PMCID: PMC11123936 DOI: 10.3390/nano14100845] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 05/09/2024] [Accepted: 05/10/2024] [Indexed: 05/25/2024]
Abstract
Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.
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Affiliation(s)
- Xiang Yu
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583, Singapore
| | - Xinyi Shen
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
| | - Xiaoyun Le
- School of Physics, Beihang University, Beijing 100191, China
- Beijing Advanced Innovation Center for Big Data-Based Precision Medicine, School of Medicine and Engineering, Beihang University, Beijing 100191, China
- Beijing Key Laboratory of Advanced Nuclear Energy Materials and Physics, Beihang University, Beijing 100191, China
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5
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Gao W, Liu S, Chen Y, Niu K, Lu Z, Li Z, Zeng Z, Xiao Y, Zhai Y, Liu Y, Wang Y. Solid-State Anion Exchange Enabled by Pluggable vdW Assembly for In Situ Halide Manipulation in Perovskite Monocrystalline Film. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402159. [PMID: 38678535 DOI: 10.1002/smll.202402159] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/19/2024] [Revised: 04/13/2024] [Indexed: 05/01/2024]
Abstract
The fabrication of perovskite single crystal-based optoelectronics with improved performance is largely hindered by limited processing techniques. Particularly, the local halide composition manipulation, which dominates the bandgap and thus the formation of heterostructures and emission of multiple-wavelength light, is realized via prevalent liquid- or gas-phase anion exchange with the utilization of lithography, while the monocrystalline nature is sacrificed due to polycrystalline transition in exchange with massive defects emerging, impeding carrier separation and transportation. Thus, a damage-free and lithography-free solid-state anion exchange strategy, aiming at in situ halide manipulation in perovskite monocrystalline film, is developed. Typically, CsPbCl3 working as medium to deliver halide is van der Waals (vdW) assembled to specific spots of CsPbBr3, followed by the removal of CsPbCl3 after anion exchange, with the halide composition in contact area modulated and monocrystalline nature of CsPbBr3 preserved. CsPbBr3-CsPbBrxCl3-x monocrystalline heterostructure has been achieved without lithography. Device based on the heterostructure shows apparent rectification behavior and improved photo-response rate. Heterostructure arrays can also be constructed with customized medium crystal. Furthermore, the halide composition can be accurately tuned to enable full coverage of visible spectra. The solid-state exchange enriches the toolbox for processing vulnerable perovskite and paves the way for the integration of monocrystalline perovskite optoelectronics.
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Affiliation(s)
- Weiqi Gao
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Songlong Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yang Chen
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Kaixin Niu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zheyi Lu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiwei Li
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Zhiyao Zeng
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, China
| | - Yulong Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering and Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, P. R. China
| | - Yaxin Zhai
- Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education, Department of Physics, Hunan Normal University, Changsha, 410081, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
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6
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Zhang J, Wang M, Li P, Sa Z, Liu F, Sun W, Li Y, Mu W, Jia Z, Chen M, Yang ZX. Toward Smart, Flexible, and Omnidirectional Self-Powered Photodetection by an All-Solution-Processed In 2O 3/Pbl 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3685-3693. [PMID: 38226599 DOI: 10.1021/acsami.3c16106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Amorphous In2O3 film is emerging as a promising oxide semiconductor for next-generation electronics and optoelectronics owing to high mobility and wide band gap. However, the persistent photocurrent phenomenon and high carrier concentration in amorphous In2O3 film are challenging the photodetection performances, resulting in a long response time and low Ilight/Idark ratio. In this work, the In2O3/PbI2 heterojunction is constructed by an all-solution synthesis process to inhibit the persistent photocurrent phenomenon and large dark current. Benefiting from the built-in electric field at the heterojunction interface, the In2O3/PbI2 heterojunction photodetector exhibits excellent self-powered photodetection performances with an ultralow dark current of 10-12 A, a high Ilight/Idark ratio of 104, and fast response times of 0.6/0.6 ms. Furthermore, the entire solution synthesis process and amorphous characteristics enable the fabrication of an In2O3/PbI2 heterojunction photodetector on arbitrary substrates to realize specific functions. When configured onto the polyimide substrate, the In2O3/PbI2 heterojunction photodetector shows excellent mechanical flexibility, bending endurance, and photoresponse stability. When implanted onto the transparent substrate, the In2O3/PbI2 heterojunction photodetector exhibits an outstanding omnidirectional self-powdered photodetection performance and imaging capability. All results pave the way for an all-solution-processed amorphous In2O3 film in advanced high-performance photodetectors.
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Affiliation(s)
- Jie Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Mingxu Wang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Pengsheng Li
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Zixu Sa
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Fengjing Liu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Wenzhang Sun
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Yang Li
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Wenxiang Mu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
| | - Zhitai Jia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
- Shandong Research Institute of Industrial Technology, Jinan 250101, China
| | - Ming Chen
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Zai-Xing Yang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
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