1
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Wang K, Sun X, Cheng S, Cheng Y, Huang K, Liu R, Yuan H, Li W, Liang F, Yang Y, Yang F, Zheng K, Liang Z, Tu C, Liu M, Ma M, Ge Y, Jian M, Yin W, Qi Y, Liu Z. Multispecies-coadsorption-induced rapid preparation of graphene glass fiber fabric and applications in flexible pressure sensor. Nat Commun 2024; 15:5040. [PMID: 38866786 PMCID: PMC11169262 DOI: 10.1038/s41467-024-48958-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 05/14/2024] [Indexed: 06/14/2024] Open
Abstract
Direct chemical vapor deposition (CVD) growth of graphene on dielectric/insulating materials is a promising strategy for subsequent transfer-free applications of graphene. However, graphene growth on noncatalytic substrates is faced with thorny issues, especially the limited growth rate, which severely hinders mass production and practical applications. Herein, graphene glass fiber fabric (GGFF) is developed by graphene CVD growth on glass fiber fabric. Dichloromethane is applied as a carbon precursor to accelerate graphene growth, which has a low decomposition energy barrier, and more importantly, the produced high-electronegativity Cl radical can enhance adsorption of active carbon species by Cl-CH2 coadsorption and facilitate H detachment from graphene edges. Consequently, the growth rate is increased by ~3 orders of magnitude and carbon utilization by ~960-fold, compared with conventional methane precursor. The advantageous hierarchical conductive configuration of lightweight, flexible GGFF makes it an ultrasensitive pressure sensor for human motion and physiological monitoring, such as pulse and vocal signals.
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Affiliation(s)
- Kun Wang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Xiucai Sun
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Shuting Cheng
- Beijing Graphene Institute (BGI), Beijing, China
- State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing, China
| | - Yi Cheng
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Kewen Huang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
| | - Ruojuan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Hao Yuan
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Wenjuan Li
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Fushun Liang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Yuyao Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Fan Yang
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Kangyi Zheng
- Beijing Graphene Institute (BGI), Beijing, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, China
| | - Zhiwei Liang
- Beijing Graphene Institute (BGI), Beijing, China
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, China
| | - Ce Tu
- Beijing Graphene Institute (BGI), Beijing, China
| | - Mengxiong Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Mingyang Ma
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Yunsong Ge
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
| | - Muqiang Jian
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China
- Beijing Graphene Institute (BGI), Beijing, China
- Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, China
| | - Wanjian Yin
- Beijing Graphene Institute (BGI), Beijing, China
- College of Energy, Soochow Institute for Energy and Materials Innovations (SIEMIS), Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies, Soochow University, Suzhou, China
| | - Yue Qi
- Beijing Graphene Institute (BGI), Beijing, China.
| | - Zhongfan Liu
- Centre for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
- Beijing Graphene Institute (BGI), Beijing, China.
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2
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Pham PV, Mai TH, Dash SP, Biju V, Chueh YL, Jariwala D, Tung V. Transfer of 2D Films: From Imperfection to Perfection. ACS NANO 2024; 18:14841-14876. [PMID: 38810109 PMCID: PMC11171780 DOI: 10.1021/acsnano.4c00590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 04/03/2024] [Accepted: 04/12/2024] [Indexed: 05/31/2024]
Abstract
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.
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Affiliation(s)
- Phuong V. Pham
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Gothenburg 41296, Sweden
| | - Vasudevanpillai Biju
- Research
Institute for Electronic Science, Hokkaido
University, Hokkaido 001-0020, Japan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deep Jariwala
- Department
of Electrical and Systems Engineering, University
of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department
of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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3
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Fang Y, Zhou K, Wei W, Zhang J, Sun J. Recent advances in batch production of transfer-free graphene. NANOSCALE 2024; 16:10522-10532. [PMID: 38739019 DOI: 10.1039/d4nr01339e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Large-area transfer-free graphene films prepared via chemical vapor deposition have proved appealing for various applications, with exciting examples in electronics, photonics, and optoelectronics. To achieve their commercialisation, batch production is a prerequisite. Nevertheless, the prevailing scalable synthesis strategies that have been reported are still obstructed by production inefficiencies and non-uniformity. There has also been a lack of reviews in this realm. We present herein a comprehensive and timely summary of recent advances in the batch production of transfer-free graphene. Primary issues and promising approaches for improving the graphene growth rate are first addressed, followed by a discussion of the strategies to guarantee in-plane and batch uniformity for graphene grown on planar plates and wafer-scale substrates, with the design of the target equipment to meet productivity requirements. Finally, potential research directions are outlined, aiming to offer insights into guiding the scalable production of transfer-free graphene.
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Affiliation(s)
- Ye Fang
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
- Beijing Graphene Institute, Beijing 100095, China
| | - Kaixuan Zhou
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
- Beijing Graphene Institute, Beijing 100095, China
| | - Wenze Wei
- Beijing Graphene Institute, Beijing 100095, China
| | - Jincan Zhang
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
| | - Jingyu Sun
- College of Energy, SUDA-BGI Collaborative Innovation Centre, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.
- Beijing Graphene Institute, Beijing 100095, China
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4
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Vashishtha P, Abidi IH, Giridhar SP, Verma AK, Prajapat P, Bhoriya A, Murdoch BJ, Tollerud JO, Xu C, Davis JA, Gupta G, Walia S. CVD-Grown Monolayer MoS 2 and GaN Thin Film Heterostructure for a Self-Powered and Bidirectional Photodetector with an Extended Active Spectrum. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38838350 DOI: 10.1021/acsami.4c03902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2024]
Abstract
Photodetector technology has evolved significantly over the years with the emergence of new active materials. However, there remain trade-offs between spectral sensitivity, operating energy, and, more recently, an ability to harbor additional features such as persistent photoconductivity and bidirectional photocurrents for new emerging application areas such as switchable light imaging and filter-less color discrimination. Here, we demonstrate a self-powered bidirectional photodetector based on molybdenum disulfide/gallium nitride (MoS2/GaN) epitaxial heterostructure. This fabricated detector exhibits self-powered functionality and achieves detection in two discrete wavelength bands: ultraviolet and visible. Notably, it attains a peak responsivity of 631 mAW-1 at a bias of 0V. The device's response to illumination at these two wavelengths is governed by distinct mechanisms, activated under applied bias conditions, thereby inducing a reversal in the polarity of the photocurrent. This work underscores the feasibility of self-powered and bidirectional photocurrent detection but also opens new vistas for technological advancements for future optoelectronic, neuromorphic, and sensing applications.
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Affiliation(s)
- Pargam Vashishtha
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Irfan H Abidi
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Sindhu P Giridhar
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Ajay K Verma
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Pukhraj Prajapat
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Ankit Bhoriya
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Billy J Murdoch
- RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne 3000, Australia
| | - Jonathan O Tollerud
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Chenglong Xu
- Micro Nano Research Facility, RMIT University, Melbourne 3000, Australia
| | - Jeff A Davis
- Optical Sciences Centre, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia
| | - Govind Gupta
- Academy of Scientific and Innovative Research, CSIR-HRDC Campus, Ghaziabad 201002, Uttar Pradesh, India
- CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
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5
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Nashashibi S, Koepfli SM, Schwanninger R, Baumann M, Doderer M, Bisang D, Fedoryshyn Y, Leuthold J. Engineering Graphene Phototransistors for High Dynamic Range Applications. ACS NANO 2024; 18:12760-12770. [PMID: 38728257 PMCID: PMC11112981 DOI: 10.1021/acsnano.3c11856] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 04/23/2024] [Accepted: 05/01/2024] [Indexed: 05/12/2024]
Abstract
Phototransistors are light-sensitive devices featuring a high dynamic range, low-light detection, and mechanisms to adapt to different ambient light conditions. These features are of interest for bioinspired applications such as artificial and restored vision. In this work, we report on a graphene-based phototransistor exploiting the photogating effect that features picowatt- to microwatt-level photodetection, a dynamic range covering six orders of magnitude from 7 to 107 lux, and a responsivity of up to 4.7 × 103 A/W. The proposed device offers the highest dynamic range and lowest optical power detected compared to the state of the art in interfacial photogating and further operates air stably. These results have been achieved by a combination of multiple developments. For example, by optimizing the geometry of our devices with respect to the graphene channel aspect ratio and by introducing a semitransparent top-gate electrode, we report a factor 20-30 improvement in responsivity over unoptimized reference devices. Furthermore, we use a built-in dynamic range compression based on a partial logarithmic optical power dependence in combination with control of responsivity. These features enable adaptation to changing lighting conditions and support high dynamic range operation, similar to what is known in human visual perception. The enhanced performance of our devices therefore holds potential for bioinspired applications, such as retinal implants.
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Affiliation(s)
- Shadi Nashashibi
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Stefan M. Koepfli
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | | | - Michael Baumann
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Michael Doderer
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Dominik Bisang
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Yuriy Fedoryshyn
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
| | - Juerg Leuthold
- ETH Zurich, Institute of
Electromagnetic Fields, Zurich 8092, Switzerland
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6
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Pham PV, Mai TH, Do HB, Vasundhara M, Nguyen VH, Nguyen T, Bui HV, Dao VD, Gupta RK, Ponnusamy VK, Park JH. Layer-by-layer thinning of two-dimensional materials. Chem Soc Rev 2024; 53:5190-5226. [PMID: 38586901 DOI: 10.1039/d3cs00817g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Etching technology - one of the representative modern semiconductor device makers - serves as a broad descriptor for the process of removing material from the surfaces of various materials, whether partially or entirely. Meanwhile, thinning technology represents a novel and highly specialized approach within the realm of etching technology. It indicates the importance of achieving an exceptionally sophisticated and precise removal of material, layer-by-layer, at the nanoscale. Notably, thinning technology has gained substantial momentum, particularly in top-down strategies aimed at pushing the frontiers of nano-worlds. This rapid development in thinning technology has generated substantial interest among researchers from diverse backgrounds, including those in the fields of chemistry, physics, and engineering. Precisely and expertly controlling the layer numbers of 2D materials through the thinning procedure has been considered as a crucial step. This is because the thinning processes lead to variations in the electrical and optical characteristics. In this comprehensive review, the strategies for top-down thinning of representative 2D materials (e.g., graphene, black phosphorus, MoS2, h-BN, WS2, MoSe2, and WSe2) based on conventional plasma-assisted thinning, integrated cyclic plasma-assisted thinning, laser-assisted thinning, metal-assisted splitting, and layer-resolved splitting are covered in detail, along with their mechanisms and benefits. Additionally, this review further explores the latest advancements in terms of the potential advantages of semiconductor devices achieved by top-down 2D material thinning procedures.
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Affiliation(s)
- Phuong V Pham
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - The-Hung Mai
- Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.
| | - Huy-Binh Do
- Faculty of Applied Science, Ho Chi Minh City University of Technology and Education, Thu Duc 700000, Vietnam
| | - M Vasundhara
- Polymers and Functional Materials Department, CSIR-Indian Institute of Chemical Technology, Tarnaka, Hyderabad 500007, India
| | - Van-Huy Nguyen
- Centre for Herbal Pharmacology and Environmental Sustainability, Chettinad Hospital and Research Institute, Chettinad Academy of Research and Education, Kelambakkam-603103, Tamil Nadu, India
| | - Trieu Nguyen
- Shared Research Facilities, West Virginia University, Morgantown, WV 26506, USA
| | - Hao Van Bui
- Faculty of Materials Science and Engineering and Faculty of Electrical and Electronic Engineering, Phenikaa University, Hanoi 12116, Vietnam
| | - Van-Duong Dao
- Faculty of Biotechnology, Chemistry, and Environmental Engineering, Phenikaa University, Hanoi 100000, Vietnam
| | - Ram K Gupta
- Department of Chemistry, Kansas Polymer Research Center, Pittsburg State University, Pittsburg, KS-66762, USA
| | - Vinoth Kumar Ponnusamy
- Department of Medicinal and Applied Chemistry, Kaohsiung Medical University, Kaohsiung 807, Taiwan.
- Research Center for Precision Environmental Medicine, Kaohsiung Medical University, Kaohsiung 807, Taiwan
- Department of Medical Research, Kaohsiung Medical University Hospital, Kaohsiung 807, Taiwan
- Department of Chemistry, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon 16419, South Korea.
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7
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Zhu Y, Zhang J, Cheng T, Tang J, Duan H, Hu Z, Shao J, Wang S, Wei M, Wu H, Li A, Li S, Balci O, Shinde SM, Ramezani H, Wang L, Lin L, Ferrari AC, Yakobson BI, Peng H, Jia K, Liu Z. Controlled Growth of Single-Crystal Graphene Wafers on Twin-Boundary-Free Cu(111) Substrates. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308802. [PMID: 37878366 DOI: 10.1002/adma.202308802] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2023] [Revised: 10/05/2023] [Indexed: 10/26/2023]
Abstract
Single-crystal graphene (SCG) wafers are needed to enable mass-electronics and optoelectronics owing to their excellent properties and compatibility with silicon-based technology. Controlled synthesis of high-quality SCG wafers can be done exploiting single-crystal Cu(111) substrates as epitaxial growth substrates recently. However, current Cu(111) films prepared by magnetron sputtering on single-crystal sapphire wafers still suffer from in-plane twin boundaries, which degrade the SCG chemical vapor deposition. Here, it is shown how to eliminate twin boundaries on Cu and achieve 4 in. Cu(111) wafers with ≈95% crystallinity. The introduction of a temperature gradient on Cu films with designed texture during annealing drives abnormal grain growth across the whole Cu wafer. In-plane twin boundaries are eliminated via migration of out-of-plane grain boundaries. SCG wafers grown on the resulting single-crystal Cu(111) substrates exhibit improved crystallinity with >97% aligned graphene domains. As-synthesized SCG wafers exhibit an average carrier mobility up to 7284 cm2 V-1 s-1 at room temperature from 103 devices and a uniform sheet resistance with only 5% deviation in 4 in. region.
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Affiliation(s)
- Yeshu Zhu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Ting Cheng
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Jilin Tang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Hongwei Duan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Zhaoning Hu
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jiaxin Shao
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Mingyue Wei
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haotian Wu
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Ang Li
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Science, China University of Petroleum, Beijing, 102249, P. R. China
| | - Sheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Osman Balci
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Sachin M Shinde
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hamideh Ramezani
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Luda Wang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- National Key Laboratory of Advanced Micro and Nano Manufacture Technology, School of Integrated Circuits, Peking University, Beijing, 100871, P. R. China
| | - Li Lin
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Boris I Yakobson
- Department of Materials Science & NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kaicheng Jia
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Technology Innovation Center of Graphene Metrology and Standardization for State Market Regulation, Beijing Graphene Institute, Beijing, 100095, P. R. China
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8
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Gautam C, Thakurta B, Pal M, Ghosh AK, Giri A. Wafer scale growth of single crystal two-dimensional van der Waals materials. NANOSCALE 2024; 16:5941-5959. [PMID: 38445855 DOI: 10.1039/d3nr06678a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials, including graphene, hexagonal boron nitride (hBN), and metal dichalcogenides (MCs), form the basis of modern electronics and optoelectronics due to their unique electronic structure, chemical activity, and mechanical strength. Despite many proof-of-concept demonstrations so far, to fully realize their large-scale practical applications, especially in devices, wafer-scale single crystal atomically thin highly uniform films are indispensable. In this minireview, we present an overview on the strategies and highlight recent significant advances toward the synthesis of wafer-scale single crystal graphene, hBN, and MC 2D thin films. Currently, there are five distinct routes to synthesize wafer-scale single crystal 2D vdW thin films: (i) nucleation-controlled growth by suppressing the nucleation density, (ii) unidirectional alignment of multiple epitaxial nuclei and their seamless coalescence, (iii) self-collimation of randomly oriented grains on a molten metal, (iv) surface diffusion and epitaxial self-planarization and (v) seed-mediated 2D vertical epitaxy. Finally, the challenges that need to be addressed in future studies have also been described.
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Affiliation(s)
- Chetna Gautam
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Baishali Thakurta
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Monalisa Pal
- Department of Chemistry, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India
| | - Anup Kumar Ghosh
- Department of Physics, Institute of Science, Banaras Hindu University, Varanasi, UP - 221005, India.
| | - Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
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9
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Bonaventura E, Martella C, Macis S, Dhungana DS, Krotkus S, Heuken M, Lupi S, Molle A, Grazianetti C. Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene. NANOTECHNOLOGY 2024; 35:23LT01. [PMID: 38467059 DOI: 10.1088/1361-6528/ad3254] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 03/10/2024] [Indexed: 03/13/2024]
Abstract
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets exhibits a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of ultra-thin tin films therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.
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Affiliation(s)
- Eleonora Bonaventura
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
- Dipartment of Materials Science, University of Milano-Bicocca, via R. Cozzi 55, Milano, Italy
| | - Christian Martella
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| | - Salvatore Macis
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Roma, Italy
| | - Daya S Dhungana
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| | | | | | - Stefano Lupi
- Department of Physics, Sapienza University, Piazzale Aldo Moro 5, Roma, Italy
- CNR-IOM, Q2 Building, Area Science Park, Basovizza-Trieste, Italy
| | - Alessandro Molle
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
| | - Carlo Grazianetti
- CNR-IMM Unit of Agrate Brianza, via C. Olivetti 2, Agrate Brianza, Italy
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10
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Park BI, Kim J, Lu K, Zhang X, Lee S, Suh JM, Kim DH, Kim H, Kim J. Remote Epitaxy: Fundamentals, Challenges, and Opportunities. NANO LETTERS 2024; 24:2939-2952. [PMID: 38477054 DOI: 10.1021/acs.nanolett.3c04465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.
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Affiliation(s)
- Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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11
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Liu B, Ma S. Precise synthesis of graphene by chemical vapor deposition. NANOSCALE 2024; 16:4407-4433. [PMID: 38291992 DOI: 10.1039/d3nr06041a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Graphene, a typical representative of the family of two-dimensional (2D) materials, possesses a series of phenomenal physical properties. To date, numerous inspiring discoveries have been made on its structures, properties, characterization, synthesis, transfer and applications. The real practical applications of this magic material indeed require large-scale synthesis and precise control over its structures, such as size, crystallinity, layer number, stacking order, edge type and contamination levels. Nonetheless, studies on the precise synthesis of graphene are far from satisfactory currently. Our review aims to deal with the precise synthesis of four critical graphene structures, including single-crystal graphene (SCG), AB-stacked bilayer graphene (AB-BLG), etched graphene and clean graphene. Meanwhile, existing problems and future directions in the precise synthesis of graphene are also briefly discussed.
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Affiliation(s)
- Bing Liu
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
| | - Siguang Ma
- Ji Hua Laboratory, Foshan, 528200, P. R. China.
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12
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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13
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Zhang Y, Meng Y, Wang L, Lan C, Quan Q, Wang W, Lai Z, Wang W, Li Y, Yin D, Li D, Xie P, Chen D, Yang Z, Yip S, Lu Y, Wong CY, Ho JC. Pulse irradiation synthesis of metal chalcogenides on flexible substrates for enhanced photothermoelectric performance. Nat Commun 2024; 15:728. [PMID: 38272917 PMCID: PMC10810900 DOI: 10.1038/s41467-024-44970-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Accepted: 01/11/2024] [Indexed: 01/27/2024] Open
Abstract
High synthesis temperatures and specific growth substrates are typically required to obtain crystalline or oriented inorganic functional thin films, posing a significant challenge for their utilization in large-scale, low-cost (opto-)electronic applications on conventional flexible substrates. Here, we explore a pulse irradiation synthesis (PIS) to prepare thermoelectric metal chalcogenide (e.g., Bi2Se3, SnSe2, and Bi2Te3) films on multiple polymeric substrates. The self-propagating combustion process enables PIS to achieve a synthesis temperature as low as 150 °C, with an ultrafast reaction completed within one second. Beyond the photothermoelectric (PTE) property, the thermal coupling between polymeric substrates and bismuth selenide films is also examined to enhance the PTE performance, resulting in a responsivity of 71.9 V/W and a response time of less than 50 ms at 1550 nm, surpassing most of its counterparts. This PIS platform offers a promising route for realizing flexible PTE or thermoelectric devices in an energy-, time-, and cost-efficient manner.
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Affiliation(s)
- Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - You Meng
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Liqiang Wang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Changyong Lan
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, P.R. China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Yezhan Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Di Yin
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Zhe Yang
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan
| | - Yang Lu
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong, SAR 999077, P.R. China
| | - Chun-Yuen Wong
- Department of Chemistry, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong, SAR 999077, P.R. China.
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816 8580, Japan.
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14
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Katiyar AK, Hoang AT, Xu D, Hong J, Kim BJ, Ji S, Ahn JH. 2D Materials in Flexible Electronics: Recent Advances and Future Prospectives. Chem Rev 2024; 124:318-419. [PMID: 38055207 DOI: 10.1021/acs.chemrev.3c00302] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.
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Affiliation(s)
- Ajit Kumar Katiyar
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Duo Xu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Juyeong Hong
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Beom Jin Kim
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seunghyeon Ji
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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15
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Zhu Y, Cao J, Liu S, Loh KP. Heteroepitaxial Growth of Black Phosphorus on Tin Monosulfide. NANO LETTERS 2024; 24:479-485. [PMID: 38147351 DOI: 10.1021/acs.nanolett.3c04372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/27/2023]
Abstract
Black phosphorus (Black P), a layered semiconductor with a layer-dependent bandgap and high carrier mobility, is a promising candidate for next-generation electronics and optoelectronics. However, the synthesis of large-area, layer-precise, single crystalline Black P films remains a challenge due to their high nucleation energy. Here, we report the molecular beam heteroepitaxy of single crystalline Black P films on a tin monosulfide (SnS) buffer layer grown on Au(100). The layer-by-layer growth mode enables the preparation of monolayer to trilayer films, with band gaps that reflect layer-dependent quantum confinement.
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Affiliation(s)
- Youhuan Zhu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Junjie Cao
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Shanshan Liu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Kian Ping Loh
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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16
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Zhang W, Zhang X, Ono LK, Qi Y, Oughaddou H. Recent Advances in Phosphorene: Structure, Synthesis, and Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2303115. [PMID: 37726245 DOI: 10.1002/smll.202303115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Revised: 08/27/2023] [Indexed: 09/21/2023]
Abstract
Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.
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Affiliation(s)
- Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Xuan Zhang
- School of Materials and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Luis K Ono
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Yabing Qi
- Energy Materials and Surface Sciences Unit (EMSSU), Okinawa Institute of Science and Technology Graduate University (OIST), 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa, 904-0495, Japan
| | - Hamid Oughaddou
- Université Paris-Saclay, CNRS, Institut des Sciences Moléculaires d'Orsay (ISMO), Bât. 520, Orsay, 91405, France
- Département de Physique, CY Cergy-Paris Université, Cergy-Pontoise Cedex, F-95031, France
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17
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Ali A, Shin YH. Prediction of novel ground-state structures and analysis of phonon transport in two-dimensional Ge xS y compounds. Phys Chem Chem Phys 2023; 26:602-611. [PMID: 38086636 DOI: 10.1039/d3cp04568d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
We conducted this study to explore the ground-state structures of two-dimensional (2D) variable-composition GexSy compounds, driven by the polymorphic characteristics of bulk germanium sulfides and the promising thermoelectric performance of 2D GeS (Pmn21). To accomplish this, we utilized the highly successful evolutionary-algorithm-based code USPEX in conjunction with VASP for total energy calculations, leading to the discovery of three previously unexplored structures of Ge2S (P2/c), GeS (P3̄m1), and GeS2 (P21/c). These 2D materials exhibit significantly lower formation energies compared to their reported counterparts. We thoroughly scrutinized the structural stability and subsequently analyzed their electronic structures. Our analysis reveals a nearly direct band gap of 0.12/0.84 eV with the PBE/HSE06 functional for 2D Ge2S and an indirect band gap for 2D GeS and GeS2. Their semiconducting nature highlights the crucial importance of lattice thermal conductivity (κl), which we determined by solving the Boltzmann transport equation for phonons. Importantly, we predict a room temperature κl value of 6.82 W m-1 K-1 for GeS, lower than its 2D orthorhombic counterpart. In the case of GeS2, we observed an anisotropic κl value of 16.95/10.68 W m-1 K-1 along the zigzag/armchair directions at 300 K, with an in-plane anisotropy ratio of 1.59, surpassing that of 2D IV-VI compounds. We delve into detailed discussions regarding the role of lattice anharmonicity, group velocities, phonon lifetimes, and three-phonon weighted phase space in the overall thermal conductivity analysis.
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Affiliation(s)
- Asad Ali
- Multiscale Materials Modeling Laboratory, Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
| | - Young-Han Shin
- Multiscale Materials Modeling Laboratory, Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
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18
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Convertino D, Trincavelli ML, Giacomelli C, Marchetti L, Coletti C. Graphene-based nanomaterials for peripheral nerve regeneration. Front Bioeng Biotechnol 2023; 11:1306184. [PMID: 38164403 PMCID: PMC10757979 DOI: 10.3389/fbioe.2023.1306184] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2023] [Accepted: 11/30/2023] [Indexed: 01/03/2024] Open
Abstract
Emerging nanotechnologies offer numerous opportunities in the field of regenerative medicine and have been widely explored to design novel scaffolds for the regeneration and stimulation of nerve tissue. In this review, we focus on peripheral nerve regeneration. First, we introduce the biomedical problem and the present status of nerve conduits that can be used to guide, fasten and enhance regeneration. Then, we thoroughly discuss graphene as an emerging candidate in nerve tissue engineering, in light of its chemical, tribological and electrical properties. We introduce the graphene forms commonly used as neural interfaces, briefly review their applications, and discuss their potential toxicity. We then focus on the adoption of graphene in peripheral nervous system applications, a research field that has gained in the last years ever-increasing attention. We discuss the potential integration of graphene in guidance conduits, and critically review graphene interaction not only with peripheral neurons, but also with non-neural cells involved in nerve regeneration; indeed, the latter have recently emerged as central players in modulating the immune and inflammatory response and accelerating the growth of new tissue.
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Affiliation(s)
- Domenica Convertino
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa, Italy
| | | | | | - Laura Marchetti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa, Italy
- Department of Pharmacy, University of Pisa, Pisa, Italy
| | - Camilla Coletti
- Center for Nanotechnology Innovation @NEST, Istituto Italiano di Tecnologia, Pisa, Italy
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19
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Li J, Yuan Y, Lanza M, Abate I, Tian B, Zhang X. Nonepitaxial Wafer-Scale Single-Crystal 2D Materials on Insulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2310921. [PMID: 38118051 DOI: 10.1002/adma.202310921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 12/01/2023] [Indexed: 12/22/2023]
Abstract
Next-generation nanodevices require 2D material synthesis on insulating substrates. However, growing high-quality 2D-layered materials, such as hexagonal boron nitride (hBN) and graphene, on insulators is challenging owing to the lack of suitable metal catalysts, imperfect lattice matching with substrates, and other factors. Therefore, developing a generally applicable approach for realizing high-quality 2D layers on insulators remains crucial, despite numerous strategies being explored. Herein, a universal strategy is introduced for the nonepitaxial synthesis of wafer-scale single-crystal 2D materials on arbitrary insulating substrates. The metal foil in a nonadhered metal-insulator substrate system is almost melted by a brief high-temperature treatment, thereby pressing the as-grown 2D layers to well attach onto the insulators. High-quality, large-area, single-crystal, monolayer hBN and graphene films are synthesized on various insulating substrates. This strategy provides new pathways for synthesizing various 2D materials on arbitrary insulators and offers a universal epitaxial platform for future single-crystal film production.
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Affiliation(s)
- Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Yue Yuan
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Iwnetim Abate
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemistry, University of California, Berkeley, CA, 97420, USA
- Department of Materials Science & Engineering, University of California, Berkeley, CA, 97420, USA
| | - Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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20
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Li Y, Zhou K, Ci H, Sun J. Recent Advances in Transfer-Free Synthesis of High-Quality Graphene. CHEMSUSCHEM 2023; 16:e202300865. [PMID: 37491687 DOI: 10.1002/cssc.202300865] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Revised: 07/25/2023] [Accepted: 07/25/2023] [Indexed: 07/27/2023]
Abstract
High-quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer-free graphene with favorable quality. Nevertheless, timely review articles on this topic are still scarce. In this contribution, a systematic summary of recent advances in transfer-free synthesis of high-quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface is presented.
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Affiliation(s)
- Yinghan Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kaixuan Zhou
- College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Haina Ci
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, 266061, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations, SUDA-BGI Collaborative Innovation Center, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
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21
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Lu Y, Li B, Xu N, Zhou Z, Xiao Y, Jiang Y, Li T, Hu S, Gong Y, Cao Y. One-atom-thick hexagonal boron nitride co-catalyst for enhanced oxygen evolution reactions. Nat Commun 2023; 14:6965. [PMID: 37907502 PMCID: PMC10618520 DOI: 10.1038/s41467-023-42696-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2023] [Accepted: 10/19/2023] [Indexed: 11/02/2023] Open
Abstract
Developing efficient (co-)catalysts with optimized interfacial mass and charge transport properties is essential for enhanced oxygen evolution reaction (OER) via electrochemical water splitting. Here we report one-atom-thick hexagonal boron nitride (hBN) as an attractive co-catalyst with enhanced OER efficiency. Various electrocatalytic electrodes are encapsulated with centimeter-sized hBN films which are dense and impermeable so that only the hBN surfaces are directly exposed to reactive species. For example, hBN covered Ni-Fe (oxy)hydroxide anodes show an ultralow Tafel slope of ~30 mV dec-1 with improved reaction current by about 10 times, reaching ~2000 mA cm-2 (at an overpotential of ~490 mV) for over 150 h. The mass activity of hBN co-catalyst is found exceeding that of commercialized catalysts by up to five orders of magnitude. Using isotope experiments and simulations, we attribute the results to the adsorption of oxygen-containing intermediates at the insulating co-catalyst, where localized electrons facilitate the deprotonation processes at electrodes. Little impedance to electron transfer is observed from hBN film encapsulation due to its ultimate thickness. Therefore, our work also offers insights into mechanisms of interfacial reactions at the very first atomic layer of electrodes.
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Affiliation(s)
- Yizhen Lu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Bixuan Li
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Na Xu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Zhihua Zhou
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yu Xiao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yu Jiang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Teng Li
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Sheng Hu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen, 361005, China
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China
| | - Yongji Gong
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China.
- Tianmushan Laboratory, Hangzhou, 310023, China.
| | - Yang Cao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China.
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen, 361005, China.
- Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, 361005, China.
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22
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Zeng F, Wang R, Wei W, Feng Z, Guo Q, Ren Y, Cui G, Zou D, Zhang Z, Liu S, Liu K, Fu Y, Kou J, Wang L, Zhou X, Tang Z, Ding F, Yu D, Liu K, Xu X. Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates. Nat Commun 2023; 14:6421. [PMID: 37828069 PMCID: PMC10570391 DOI: 10.1038/s41467-023-42270-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Accepted: 10/04/2023] [Indexed: 10/14/2023] Open
Abstract
Controllable growth of two-dimensional (2D) single crystals on insulating substrates is the ultimate pursuit for realizing high-end applications in electronics and optoelectronics. However, for the most typical 2D insulator, hexagonal boron nitride (hBN), the production of a single-crystal monolayer on insulating substrates remains challenging. Here, we propose a methodology to realize the facile production of inch-sized single-crystal hBN monolayers on various insulating substrates by an atomic-scale stamp-like technique. The single-crystal Cu foils grown with hBN films can stick tightly (within 0.35 nm) to the insulating substrate at sub-melting temperature of Cu and extrude the hBN grown on the metallic surface onto the insulating substrate. Single-crystal hBN films can then be obtained by removing the Cu foil similar to the stamp process, regardless of the type or crystallinity of the insulating substrates. Our work will likely promote the manufacturing process of fully single-crystal 2D material-based devices and their applications.
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Affiliation(s)
- Fankai Zeng
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Ran Wang
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Wenya Wei
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Zuo Feng
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China
| | - Quanlin Guo
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China
| | - Yunlong Ren
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Guoliang Cui
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Dingxin Zou
- International Quantum Academy, Futian District, Shenzhen, 518045, China
| | - Zhensheng Zhang
- International Quantum Academy, Futian District, Shenzhen, 518045, China
| | - Song Liu
- International Quantum Academy, Futian District, Shenzhen, 518045, China
| | - Kehai Liu
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808, China
| | - Ying Fu
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808, China
| | - Jinzong Kou
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808, China
| | - Li Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xu Zhou
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Zhilie Tang
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China
| | - Feng Ding
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Dapeng Yu
- International Quantum Academy, Futian District, Shenzhen, 518045, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China.
- International Centre for Quantum Materials, Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China.
- Songshan Lake Materials Laboratory, Institute of Physics, Chinese Academy of Sciences, Dongguan, 523808, China.
| | - Xiaozhi Xu
- Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University, Guangzhou, 510006, China.
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou, 510006, China.
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23
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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24
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Huang Y, Ni J, Shi X, Wang Y, Yao S, Liu Y, Fan T. Two-Step Thermal Transformation of Multilayer Graphene Using Polymeric Carbon Source Assisted by Physical Vapor Deposited Copper. MATERIALS (BASEL, SWITZERLAND) 2023; 16:5603. [PMID: 37629894 PMCID: PMC10456611 DOI: 10.3390/ma16165603] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/09/2023] [Accepted: 08/10/2023] [Indexed: 08/27/2023]
Abstract
Direct in situ growth of graphene on dielectric substrates is a reliable method for overcoming the challenges of complex physical transfer operations, graphene performance degradation, and compatibility with graphene-based semiconductor devices. A transfer-free graphene synthesis based on a controllable and low-cost polymeric carbon source is a promising approach for achieving this process. In this paper, we report a two-step thermal transformation method for the copper-assisted synthesis of transfer-free multilayer graphene. Firstly, we obtained high-quality polymethyl methacrylate (PMMA) film on a 300 nm SiO2/Si substrate using a well-established spin-coating process. The complete thermal decomposition loss of PMMA film was effectively avoided by introducing a copper clad layer. After the first thermal transformation process, flat, clean, and high-quality amorphous carbon films were obtained. Next, the in situ obtained amorphous carbon layer underwent a second copper sputtering and thermal transformation process, which resulted in the formation of a final, large-sized, and highly uniform transfer-free multilayer graphene film on the surface of the dielectric substrate. Multi-scale characterization results show that the specimens underwent different microstructural evolution processes based on different mechanisms during the two thermal transformations. The two-step thermal transformation method is compatible with the current semiconductor process and introduces a low-cost and structurally controllable polymeric carbon source into the production of transfer-free graphene. The catalytic protection of the copper layer provides a new direction for accelerating the application of graphene in the field of direct integration of semiconductor devices.
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Affiliation(s)
| | | | | | | | | | - Yue Liu
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; (Y.H.)
| | - Tongxiang Fan
- State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China; (Y.H.)
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25
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Thodkar K, Gramm F. Enhanced Mobility in Suspended Chemical Vapor-Deposited Graphene Field-Effect Devices in Ambient Conditions. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37756-37763. [PMID: 37490848 PMCID: PMC10416145 DOI: 10.1021/acsami.3c04012] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 07/11/2023] [Indexed: 07/27/2023]
Abstract
High-field-effect mobility and the two-dimensional nature of graphene films make it an interesting material for developing sensing applications with high sensitivity and low power consumption. The chemical vapor deposition process allows for producing high-quality graphene films in a scalable manner. Considering the significant impact of the underlying substrate on the graphene device performance, methods to enhance the field-effect mobility are highly desired. This work demonstrates a simplified fabrication process to develop suspended, two-terminal chemical vapor deposition (CVD) graphene devices with enhanced field-effect mobility operating at room temperature. Enhanced hole field-effect mobility of up to ∼4.8 × 104 cm2/Vs and average hole mobility >1 × 104 cm2/Vs across all of the devices is demonstrated. A gradual increase in the width of the graphene device resulted in the increase of the full width at half-maximum (FWHM) of field-effect characteristics and a decrease in the field-effect mobility. Our work presents a simplified fabrication approach to realize high-mobility suspended CVD graphene devices, beneficial for developing CVD graphene-related applications.
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Affiliation(s)
- Kishan Thodkar
- Micro-
& Nanosystems, Department of Mechanical & Process Engineering,
Tannenstrasse 3, ETH Zurich, 8052 Zurich, Switzerland
| | - Fabian Gramm
- ScopeM,
Otto-Stern-Weg 3, ETH Zurich, 8093 Zurich, Switzerland
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26
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Islam MS, Mazumder AAM, Sohag MU, Sarkar MMH, Stampfl C, Park J. Growth mechanisms of monolayer hexagonal boron nitride ( h-BN) on metal surfaces: theoretical perspectives. NANOSCALE ADVANCES 2023; 5:4041-4064. [PMID: 37560434 PMCID: PMC10408602 DOI: 10.1039/d3na00382e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/02/2023] [Accepted: 07/17/2023] [Indexed: 08/11/2023]
Abstract
Two-dimensional hexagonal boron nitride (h-BN) has appeared as a promising material in diverse areas of applications, including as an excellent substrate for graphene devices, deep-ultraviolet emitters, and tunneling barriers, thanks to its outstanding stability, flat surface, and wide-bandgap. However, for achieving such exciting applications, controllable mass synthesis of high-quality and large-scale h-BN is a precondition. The synthesis of h-BN on metal surfaces using chemical vapor deposition (CVD) has been extensively studied, aiming to obtain large-scale and high-quality materials. The atomic-scale growth process, which is a prerequisite for rationally optimizing growth circumstances, is a key topic in these investigations. Although theoretical investigations on h-BN growth mechanisms are expected to reveal numerous new insights and understandings, different growth methods have completely dissimilar mechanisms, making theoretical research extremely challenging. In this article, we have summarized the recent cutting-edge theoretical research on the growth mechanisms of h-BN on different metal substrates. On the frequently utilized Cu substrate, h-BN development was shown to be more challenging than a simple adsorption-dehydrogenation-growth scenario. Controlling the number of surface layers is also an important challenge. Growth on the Ni surface is controlled by precipitation. An unusual reaction-limited aggregation growth behavior has been seen on interfaces having a significant lattice mismatch to h-BN. With intensive theoretical investigations employing advanced simulation approaches, further progress in understanding h-BN growth processes is predicted, paving the way for guided growth protocol design.
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Affiliation(s)
- Md Sherajul Islam
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
| | | | - Minhaz Uddin Sohag
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Md Mosarof Hossain Sarkar
- Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology Khulna 9203 Bangladesh
| | - Catherine Stampfl
- School of Physics, The University of Sydney New South Wales 2006 Australia
| | - Jeongwon Park
- Department of Electrical and Biomedical Engineering, University of Nevada Reno NV 89557 USA
- School of Electrical Engineering and Computer Science, University of Ottawa Ottawa ON K1N 6N5 Canada
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27
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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28
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Li X, Yang J, Sun H, Huang L, Li H, Shi J. Controlled Synthesis and Accurate Doping of Wafer-Scale 2D Semiconducting Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305115. [PMID: 37406665 DOI: 10.1002/adma.202305115] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2023] [Revised: 06/24/2023] [Accepted: 07/04/2023] [Indexed: 07/07/2023]
Abstract
2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically thin thickness, a dangling-bond-free surface, flexible band structure, and silicon-compatible feature, making them one of the most promising channels for constructing state-of-the-art field-effect transistors in the post-Moore's era. However, the existing 2D semiconducting TMDCs fall short of meeting the industry criteria for practical applications in electronics due to their small domain size and the lack of an effective approach to modulate intrinsic physical properties. Therefore, it is crucial to prepare and dope 2D semiconducting TMDCs single crystals with wafer size. In this review, the up-to-date progress regarding the wafer-scale growth of 2D semiconducting TMDC polycrystalline and single-crystal films is systematically summarized. The domain orientation control of 2D TMDCs and the seamless stitching of unidirectionally aligned 2D islands by means of substrate design are proposed. In addition, the accurate and uniform doping of 2D semiconducting TMDCs and the effect on electronic device performances are also discussed. Finally, the dominating challenges pertaining to the enhancement of the electronic device performances of TMDCs are emphasized, and further development directions are put forward. This review provides a systematic and in-depth summary of high-performance device applications of 2D semiconducting TMDCs.
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Affiliation(s)
- Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hang Sun
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ling Huang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
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Lozano MS, Bernat-Montoya I, Angelova TI, Mojena AB, Díaz-Fernández FJ, Kovylina M, Martínez A, Cienfuegos EP, Gómez VJ. Plasma-Induced Surface Modification of Sapphire and Its Influence on Graphene Grown by Plasma-Enhanced Chemical Vapour Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1952. [PMID: 37446468 DOI: 10.3390/nano13131952] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 06/22/2023] [Accepted: 06/26/2023] [Indexed: 07/15/2023]
Abstract
In this work, we study the influence of the different surface terminations of c-plane sapphire substrates on the synthesis of graphene via plasma-enhanced chemical vapor deposition. The different terminations of the sapphire surface are controlled by a plasma process. A design of experiments procedure was carried out to evaluate the major effects governing the plasma process of four different parameters: i.e., discharge power, time, pressure and gas employed. In the characterization of the substrate, two sapphire surface terminations were identified and characterized by means of contact angle measurements, being a hydrophilic (hydrophobic) surface and the fingerprint of an Al- (OH-) terminated surface, respectively. The defects within the synthesized graphene were analyzed by Raman spectroscopy. Notably, we found that the ID/IG ratio decreases for graphene grown on OH-terminated surfaces. Furthermore, two different regimes related to the nature of graphene defects were identified and, depending on the sapphire terminated surface, are bound either to vacancy or boundary-like defects. Finally, studying the density of defects and the crystallite area, as well as their relationship with the sapphire surface termination, paves the way for increasing the crystallinity of the synthesized graphene.
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Affiliation(s)
- Miguel Sinusia Lozano
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
| | - Ignacio Bernat-Montoya
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
| | - Todora Ivanova Angelova
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
| | - Alberto Boscá Mojena
- Institute of Optoelectronic Systems and Microtechnology (ISOM), Universidad Politécnica de Madrid, 28040 Madrid, Spain
| | | | - Miroslavna Kovylina
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
| | - Alejandro Martínez
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
| | - Elena Pinilla Cienfuegos
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
| | - Víctor J Gómez
- Nanophotonics Technology Center (NTC), Universitat Politècnica de València, 46022 Valencia, Spain
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30
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Koepfli SM, Baumann M, Koyaz Y, Gadola R, Güngör A, Keller K, Horst Y, Nashashibi S, Schwanninger R, Doderer M, Passerini E, Fedoryshyn Y, Leuthold J. Metamaterial graphene photodetector with bandwidth exceeding 500 gigahertz. Science 2023; 380:1169-1174. [PMID: 37319195 DOI: 10.1126/science.adg8017] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Accepted: 05/11/2023] [Indexed: 06/17/2023]
Abstract
Although graphene has met many of its initially predicted optoelectronic, thermal, and mechanical properties, photodetectors with large spectral bandwidths and extremely high frequency responses remain outstanding. In this work, we demonstrate a >500 gigahertz, flat-frequency response, graphene-based photodetector that operates under ambient conditions across a 200-nanometer-wide spectral band with center wavelengths adaptable from <1400 to >4200 nanometers. Our detector combines graphene with metamaterial perfect absorbers with direct illumination from a single-mode fiber, which breaks with the conventional miniaturization of photodetectors on an integrated photonic platform. This design allows for much higher optical powers while still allowing record-high bandwidths and data rates. Our results demonstrate that graphene photodetectors can outperform conventional technologies in terms of speed, bandwidth, and operation across a large spectral range.
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Affiliation(s)
- Stefan M Koepfli
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Michael Baumann
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Yesim Koyaz
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Robin Gadola
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Arif Güngör
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Killian Keller
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Yannik Horst
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Shadi Nashashibi
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | | | - Michael Doderer
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Elias Passerini
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Yuriy Fedoryshyn
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
| | - Juerg Leuthold
- Institute of Electromagnetic Fields (IEF), ETH Zürich, 8092 Zürich, Switzerland
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31
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Li H, Yang J, Li X, Luo Q, Cheng M, Feng W, Du R, Wang Y, Song L, Wen X, Wen Y, Xiao M, Liao L, Zhang Y, Shi J, He J. Bridging Synthesis and Controllable Doping of Monolayer 4 in. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211536. [PMID: 36929175 DOI: 10.1002/adma.202211536] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 03/07/2023] [Indexed: 06/09/2023]
Abstract
Epitaxial growth and controllable doping of wafer-scale atomically thin semiconductor single crystals are two central tasks to tackle the scaling challenge of transistors. Despite considerable efforts are devoted, addressing such crucial issues simultaneously under 2D confinement is yet to be realized. Here, an ingenious strategy to synthesize record-breaking 4 in. length Fe-doped transition-metal dichalcogenides (TMDCs) single crystals on industry-compatible c-plane sapphire without special miscut angle is designed. Atomically thin transistors with high electron mobility (≈146 cm2 V-1 s-1 ) and remarkable on/off current ratio (≈109 ) are fabricated based on 4 in. length Fe-MoS2 single crystals, due to the ultralow contact resistance (≈489 Ω µm). In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional alignment TMDCs domains (>99%). This work represents a substantial leap in terms of bridging synthesis and doping of wafer-scale 2D semiconductor single crystals, which should promote the further device downscaling and extension of Moore's law.
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Affiliation(s)
- Hui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xiaohui Li
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Quankun Luo
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, 411105, P. R. China
| | - Mo Cheng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Xia Wen
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Mengmeng Xiao
- Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China
| | - Lei Liao
- School of Physics and Electronics, Hunan University, Changsha, 410082, P. R. China
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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32
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Zhao Y, Yang X, Cheng Z, Lau CH, Ma J, Shao L. Surface manipulation for prevention of migratory viscous crude oil fouling in superhydrophilic membranes. Nat Commun 2023; 14:2679. [PMID: 37160899 PMCID: PMC10169857 DOI: 10.1038/s41467-023-38419-3] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/25/2022] [Accepted: 04/30/2023] [Indexed: 05/11/2023] Open
Abstract
Here, we present a proactive fouling prevention mechanism that endows superhydrophilic membranes with antifouling capability against migratory viscous crude oil fouling. By simulating the hierarchical architecture/chemical composition of a dahlia leaf, a membrane surface is decorated with wrinkled-pattern microparticles, exhibiting a unique proactive fouling prevention mechanism based on a synergistic hydration layer/steric hindrance. The density functional theory and physicochemical characterizations demonstrate that the main chains of the microparticles are bent towards Fe3+ through coordination interactions to create nanoscale wrinkled patterns on smooth microparticle surfaces. Nanoscale wrinkled patterns reduce the surface roughness and increase the contact area between the membrane surface and water molecules, expanding the steric hindrance between the oil molecules and membrane surface. Molecular dynamic simulations reveal that the water-molecule densities and strengths of the hydrogen bonds are higher near the resultant membrane surface. With this concept, we can successfully inhibit the initial adhesion, migration, and deposition of oil, regardless of the viscosity, on the membrane surface and achieve migratory viscous crude oil antifouling. This research on the PFP mechanism opens pathways to realize superwettable materials for diverse applications in fields related to the environment, energy, health, and beyond.
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Affiliation(s)
- Yuanyuan Zhao
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, PR China
| | - Xiaobin Yang
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, PR China
| | - Zhongjun Cheng
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, PR China
| | - Cher Hon Lau
- School of Engineering, The University of Edinburgh, The King's Buildings, Edinburgh, UK
| | - Jun Ma
- School of Environments, Harbin Institute of Technology, Harbin, PR China
| | - Lu Shao
- MIIT Key Laboratory of Critical Materials Technology for New Energy Conversion and Storage, State Key Laboratory of Urban Water Resource and Environment, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, PR China.
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33
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Chen H, Liu X, Huang Y, Li G, Yu F, Xiong F, Zhang M, Sun L, Yang Q, Jia K, Zou R, Li H, Meng S, Lin L, Zhang J, Peng H, Liu Z. Oxidization-Temperature-Triggered Rapid Preparation of Large-Area Single-Crystal Cu(111) Foil. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209755. [PMID: 37005372 DOI: 10.1002/adma.202209755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 12/23/2022] [Indexed: 05/05/2023]
Abstract
The controlled preparation of single-crystal Cu(111) is intensively investigated owing to the superior properties of Cu(111) and its advantages in synthesizing high-quality 2D materials, especially graphene. However, the accessibility of large-area single-crystal Cu(111) is still hindered by time-consuming, complicated, and high-cost preparation methods. Here, the oxidization-temperature-triggered rapid preparation of large-area single-crystal Cu(111) in which an area up to 320 cm2 is prepared within 60 min, and where low-temperature oxidization of polycrystalline Cu foil surface plays a vital role, is reported. A mechanism is proposed, by which the thin Cux O layer transforms to a Cu(111) seed layer on the surface of Cu to induce the formation of a large-area Cu(111) foil, which is supported by both experimental data and molecular dynamics simulation results. In addition, a large-size high-quality graphene film is synthesized on the single-crystal Cu(111) foil surface and the graphene/Cu(111) composites exhibit enhanced thermal conductivity and ductility compared to their polycrystalline counterpart. This work, therefore, not only provides a new avenue toward the monocrystallinity of Cu with specific planes but also contributes to improving the mass production of high-quality 2D materials.
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Affiliation(s)
- Heng Chen
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Xiaoting Liu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Yongfeng Huang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Guangliang Li
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Feng Yu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Feng Xiong
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Mengqi Zhang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Qian Yang
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Kaicheng Jia
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruqiang Zou
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Huanxin Li
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Sheng Meng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Li Lin
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- School of Materials Science and Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Department of Engineering, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Centre for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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34
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Kim M, Kim SH, Kang C, Kim S, Kee CS. Highly efficient graphene terahertz modulator with tunable electromagnetically induced transparency-like transmission. Sci Rep 2023; 13:6680. [PMID: 37095302 PMCID: PMC10126146 DOI: 10.1038/s41598-023-34020-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Accepted: 04/22/2023] [Indexed: 04/26/2023] Open
Abstract
Graphene-based optical modulators have been extensively studied owing to the high mobility and tunable permittivity of graphene. However, weak graphene-light interactions make it difficult to achieve a high modulation depth with low energy consumption. Here, we propose a high-performance graphene-based optical modulator consisting of a photonic crystal structure and a waveguide with graphene that exhibits an electromagnetically-induced-transparency-like (EIT-like) transmission spectrum at terahertz frequency. The high quality-factor guiding mode to generate the EIT-like transmission enhances light-graphene interaction, and the designed modulator achieves a high modulation depth of 98% with a significantly small Fermi level shift of 0.05 eV. The proposed scheme can be utilized in active optical devices that require low power consumption.
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Affiliation(s)
- Myunghwan Kim
- Division of Applied Photonics System Research, Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea
- Optical Packaging Research Section, Electronics and Telecommunications Research Institute (ETRI), Gwangju, 61012, South Korea
| | - Seong-Han Kim
- Division of Applied Photonics System Research, Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea
| | - Chul Kang
- Division of Applied Photonics System Research, Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea
| | - Soeun Kim
- Division of Applied Photonics System Research, Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea.
| | - Chul-Sik Kee
- Division of Applied Photonics System Research, Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, South Korea.
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35
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Xin X, Chen J, Ma L, Ma T, Xin W, Xu H, Ren W, Liu Y. Grain Size Engineering of CVD-Grown Large-Area Graphene Films. SMALL METHODS 2023:e2300156. [PMID: 37075746 DOI: 10.1002/smtd.202300156] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 03/02/2023] [Indexed: 05/03/2023]
Abstract
Graphene, a single atomic layer of graphitic carbon, has attracted much attention because of its outstanding properties hold great promise for a wide range of technological applications. Large-area graphene films (GFs) grown by chemical vapor deposition (CVD) are highly desirable for both investigating their intrinsic properties and realizing their practical applications. However, the presence of grain boundaries (GBs) has significant impacts on their properties and related applications. According to the different grain sizes, GFs can be divided into polycrystalline, single-crystal, and nanocrystalline films. In the past decade, considerable progress has been made in engineering the grain sizes of GFs by modifying the CVD processes or developing some new growth approaches. The key strategies involve controlling the nucleation density, growth rate, and grain orientation. This review aims to provide a comprehensive description of grain size engineering research of GFs. The main strategies and underlying growth mechanisms of CVD-grown large-area GFs with nanocrystalline, polycrystalline, and single-crystal structures are summarized, in which the advantages and limitations are highlighted. In addition, the scaling law of physical properties in electricity, mechanics, and thermology as a function of grain sizes are briefly discussed. Finally, the perspectives for challenges and future development in this area are also presented.
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Affiliation(s)
- Xing Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Jiamei Chen
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Laipeng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Teng Ma
- Department of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Wei Xin
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Haiyang Xu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
- School of Material Science and Engineering, University of Science and Technology of China, Shenyang, 110016, China
| | - Yichun Liu
- Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 130024, Changchun, China
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36
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Chen C, Yin Y, Zhang R, Yuan Q, Xu Y, Zhang Y, Chen J, Zhang Y, Li C, Wang J, Li J, Fei L, Yu Q, Zhou Z, Zhang H, Cheng R, Dong Z, Xu X, Pan A, Zhang K, He J. Growth of single-crystal black phosphorus and its alloy films through sustained feedstock release. NATURE MATERIALS 2023:10.1038/s41563-023-01516-1. [PMID: 36959500 DOI: 10.1038/s41563-023-01516-1] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Accepted: 02/24/2023] [Indexed: 05/04/2023]
Abstract
Black phosphorus (BP), a fascinating semiconductor with high mobility and a tunable direct bandgap, has emerged as a candidate beyond traditional silicon-based devices for next-generation electronics and optoelectronics. The ability to grow large-scale, high-quality BP films is a prerequisite for scalable integrated applications but has thus far remained a challenge due to unmanageable nucleation events. Here we develop a sustained feedstock release strategy to achieve subcentimetre-size single-crystal BP films by facilitating the lateral growth mode under a low nucleation rate. The as-grown single-crystal BP films exhibit high crystal quality, which brings excellent field-effect electrical properties and observation of pronounced Shubnikov-de Haas oscillations, with high mobilities up to ~6,500 cm2 V-1 s-1 at low temperatures. We further extend this approach to the growth of single-crystal BP alloy films, which broaden the infrared emission regime of BP from 3.7 μm to 6.9 μm at room temperature. This work will greatly facilitate the development of high-performance electronics and optoelectronics based on BP family materials.
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Affiliation(s)
- Cheng Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Yuling Yin
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Rencong Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Qinghong Yuan
- State Key Laboratory of Precision Spectroscopy, School of Physics and Electronic Science, East China Normal University, Shanghai, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Yushuang Zhang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China
- State Key Laboratory of Pulsed Power Laser Technology, College of Electronic Engineering, National University of Defense Technology, Hefei, China
| | - Jie Chen
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Yan Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Chang Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Junyong Wang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Jie Li
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Linfeng Fei
- School of Physics and Materials Science, Nanchang University, Nanchang, Jiangxi, China
| | - Qiang Yu
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Zheng Zhou
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
| | - Huisheng Zhang
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China
| | - Zhuo Dong
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education & Research Institute of Materials Science, Shanxi Normal University, Taiyuan, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
| | - Kai Zhang
- CAS Key Laboratory of Nano-Bio Interface & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China.
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, China.
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
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37
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Wang P, Ge J, Luo J, Wang H, Song L, Li Z, Yang J, Wang Y, Du R, Feng W, Wang J, He J, Shi J. Interisland-Distance-Mediated Growth of Centimeter-Scale Two-Dimensional Magnetic Fe 3O 4 Arrays with Unidirectional Domain Orientations. NANO LETTERS 2023; 23:1758-1766. [PMID: 36790274 DOI: 10.1021/acs.nanolett.2c04535] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) nanosheet arrays with unidirectional orientations are of great significance for synthesizing wafer-scale single crystals. Although great efforts have been devoted, the growth of atomically thin magnetic nanosheet arrays and single crystals is still unaddressed. Here we design an interisland-distance-mediated chemical vapor deposition strategy to synthesize centimeter-scale atomically thin Fe3O4 arrays with unidirectional orientations on mica. The unidirectional alignment of nearly all the Fe3O4 nanosheets is driven by a dual-coupling-guided growth mechanism. The Fe3O4/mica interlayer interaction induces two preferred antiparallel orientations, whereas the interisland interaction of Fe3O4 breaks the energy degeneracy of antiparallel orientations. The room-temperature long-range ferrimagnetic order and thickness-tunable magnetic domain evolution are uncovered in atomically thin Fe3O4. This strategy to tune the orientations of nanosheets through the an interisland interaction can guide the synthesis of other 2D transition-metal oxides, thereby laying a solid foundation for future spintronic device applications at the integration level.
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Affiliation(s)
- Peng Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jun Ge
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Jiawei Luo
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Luying Song
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Zhongwei Li
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Junbo Yang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Yuzhu Wang
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Ruofan Du
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Wang Feng
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
| | - Jianping Shi
- The Institute for Advanced Studies, Wuhan University, Wuhan 430072, People's Republic of China
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38
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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Purwidyantri A, Azinheiro S, García Roldán A, Jaegerova T, Vilaça A, Machado R, Cerqueira MF, Borme J, Domingues T, Martins M, Alpuim P, Prado M. Integrated Approach from Sample-to-Answer for Grapevine Varietal Identification on a Portable Graphene Sensor Chip. ACS Sens 2023; 8:640-654. [PMID: 36657739 PMCID: PMC9973367 DOI: 10.1021/acssensors.2c02090] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/23/2022] [Accepted: 12/23/2022] [Indexed: 01/21/2023]
Abstract
Identifying grape varieties in wine, related products, and raw materials is of great interest for enology and to ensure its authenticity. However, these matrices' complexity and low DNA content make this analysis particularly challenging. Integrating DNA analysis with 2D materials, such as graphene, offers an advantageous pathway toward ultrasensitive DNA detection. Here, we show that monolayer graphene provides an optimal test bed for nucleic acid detection with single-base resolution. Graphene's ultrathinness creates a large surface area with quantum confinement in the perpendicular direction that, upon functionalization, provides multiple sites for DNA immobilization and efficient detection. Its highly conjugated electronic structure, high carrier mobility, zero-energy band gap with the associated gating effect, and chemical inertness explain graphene's superior performance. For the first time, we present a DNA-based analytic tool for grapevine varietal discrimination using an integrated portable biosensor based on a monolayer graphene field-effect transistor array. The system comprises a wafer-scale fabricated graphene chip operated under liquid gating and connected to a miniaturized electronic readout. The platform can distinguish closely related grapevine varieties, thanks to specific DNA probes immobilized on the sensor, demonstrating high specificity even for discriminating single-nucleotide polymorphisms, which is hard to achieve with a classical end-point polymerase chain reaction or quantitative polymerase chain reaction. The sensor was operated in ultralow DNA concentrations, with a dynamic range of 1 aM to 0.1 nM and an attomolar detection limit of ∼0.19 aM. The reported biosensor provides a promising way toward developing decentralized analytical tools for tracking wine authenticity at different points of the food value chain, enabling data transmission and contributing to the digitalization of the agro-food industry.
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Affiliation(s)
- Agnes Purwidyantri
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
| | - Sarah Azinheiro
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
- Department
of Analytical Chemistry, Nutrition and Food Science, School of Veterinary
Sciences, University of Santiago de Compostela, Campus of Lugo, Lugo27002, Spain
| | - Aitor García Roldán
- Department
of Analytical Chemistry, Nutrition and Food Science, School of Veterinary
Sciences, University of Santiago de Compostela, Campus of Lugo, Lugo27002, Spain
| | - Tereza Jaegerova
- Department
of Food Analysis and Nutrition, Faculty of Food and Biochemical Technology, University of Chemistry and Technology Prague, Prague 6, Prague166 28, Czech Republic
| | - Adriana Vilaça
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
| | - Rofer Machado
- Centre
of Chemistry, University of Minho, Campus de Gualtar, Braga4710-057, Portugal
| | - M. Fátima Cerqueira
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
- Center
of Physics of the Universities of Minho and Porto, University of Minho, Braga4710-057, Portugal
| | - Jérôme Borme
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
| | - Telma Domingues
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
- Center
of Physics of the Universities of Minho and Porto, University of Minho, Braga4710-057, Portugal
| | - Marco Martins
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
| | - Pedro Alpuim
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
- Center
of Physics of the Universities of Minho and Porto, University of Minho, Braga4710-057, Portugal
| | - Marta Prado
- International
Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
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40
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Pang J, Peng S, Hou C, Zhao H, Fan Y, Ye C, Zhang N, Wang T, Cao Y, Zhou W, Sun D, Wang K, Rümmeli MH, Liu H, Cuniberti G. Applications of Graphene in Five Senses, Nervous System, and Artificial Muscles. ACS Sens 2023; 8:482-514. [PMID: 36656873 DOI: 10.1021/acssensors.2c02790] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
Graphene remains of great interest in biomedical applications because of biocompatibility. Diseases relating to human senses interfere with life satisfaction and happiness. Therefore, the restoration by artificial organs or sensory devices may bring a bright future by the recovery of senses in patients. In this review, we update the most recent progress in graphene based sensors for mimicking human senses such as artificial retina for image sensors, artificial eardrums, gas sensors, chemical sensors, and tactile sensors. The brain-like processors are discussed based on conventional transistors as well as memristor related neuromorphic computing. The brain-machine interface is introduced for providing a single pathway. Besides, the artificial muscles based on graphene are summarized in the means of actuators in order to react to the physical world. Future opportunities remain for elevating the performances of human-like sensors and their clinical applications.
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Affiliation(s)
- Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Songang Peng
- High-Frequency High-Voltage Device and Integrated Circuits R&D Center and Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
| | - Chongyang Hou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing 100088, People's Republic of China
| | - Yingju Fan
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Chen Ye
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Nuo Zhang
- School of Chemistry and Chemical Engineering, University of Jinan, Shandong, Jinan 250022, China
| | - Ting Wang
- State Key Laboratory of Biobased Material and Green Papermaking and People's Republic of China School of Bioengineering, Qilu University of Technology, Shandong Academy of Sciences, No. 3501 Daxue Road, Jinan 250353, People's Republic of China
| | - Yu Cao
- Key Laboratory of Modern Power System Simulation and Control & Renewable Energy Technology (Ministry of Education) and School of Electrical Engineering, Northeast Electric Power University, Jilin 132012, China
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China
| | - Ding Sun
- School of Electrical and Computer Engineering, Jilin Jianzhu University, Changchun 130118, P. R. China
| | - Kai Wang
- School of Electrical Engineering, Weihai Innovation Research Institute, Qingdao University, Qingdao 266000, China
| | - Mark H Rümmeli
- Leibniz Institute for Solid State and Materials Research Dresden, Dresden, D-01171, Germany.,College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215006, China.,Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, Zabrze 41-819, Poland.,Institute for Complex Materials, IFW Dresden, 20 Helmholtz Strasse, Dresden 01069, Germany.,Center for Energy and Environmental Technologies, VŠB-Technical University of Ostrava, 17. Listopadu 15, Ostrava 708 33, Czech Republic
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Jinan 250022, China.,State Key Laboratory of Crystal Materials, Center of Bio & Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan 250100, China
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials and Center for Advancing Electronics Dresden, Technische Universität Dresden, Dresden 01069, Germany
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41
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Kong LJ, Hu XZ, Chen CQ, Kulinich SA, Du XW. Surface-Dependent Hydrogen Evolution Activity of Copper Foil. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1777. [PMID: 36902893 PMCID: PMC10004233 DOI: 10.3390/ma16051777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/20/2023] [Accepted: 02/20/2023] [Indexed: 06/18/2023]
Abstract
Single-crystal planes are ideal platforms for catalytic research. In this work, rolled copper foils with predominantly (220) planes were used as the starting material. By using temperature gradient annealing, which caused grain recrystallization in the foils, they were transformed to those with (200) planes. In acidic solution, the overpotential of such a foil (10 mA cm-2) was found to be 136 mV lower than that of a similar rolled copper foil. The calculation results show that hollow sites formed on the (200) plane have the highest hydrogen adsorption energy and are active centers for hydrogen evolution. Thus, this work clarifies the catalytic activity of specific sites on the copper surface and demonstrates the critical role of surface engineering in designing catalytic properties.
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Affiliation(s)
- Ling-Jie Kong
- Hefei New-Materials Institute Co., Ltd., Hefei 238200, China
| | - Xin-Zhuo Hu
- Institute of New Energy Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Chuan-Qi Chen
- Institute of New Energy Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
| | - Sergei A. Kulinich
- Research Institute of Science & Technology, Tokai University, Hiratsuka 259-1292, Kanagawa, Japan
| | - Xi-Wen Du
- Institute of New Energy Materials, School of Materials Science and Engineering, Tianjin University, Tianjin 300072, China
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42
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Li M, Yin B, Gao C, Guo J, Zhao C, Jia C, Guo X. Graphene: Preparation, tailoring, and modification. EXPLORATION (BEIJING, CHINA) 2023; 3:20210233. [PMID: 37323621 PMCID: PMC10190957 DOI: 10.1002/exp.20210233] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/17/2021] [Accepted: 07/05/2022] [Indexed: 06/17/2023]
Abstract
Graphene is a 2D material with fruitful electrical properties, which can be efficiently prepared, tailored, and modified for a variety of applications, particularly in the field of optoelectronic devices thanks to its planar hexagonal lattice structure. To date, graphene has been prepared using a variety of bottom-up growth and top-down exfoliation techniques. To prepare high-quality graphene with high yield, a variety of physical exfoliation methods, such as mechanical exfoliation, anode bonding exfoliation, and metal-assisted exfoliation, have been developed. To adjust the properties of graphene, different tailoring processes have been emerged to precisely pattern graphene, such as gas etching and electron beam lithography. Due to the differences in reactivity and thermal stability of different regions, anisotropic tailoring of graphene can be achieved by using gases as the etchant. To meet practical requirements, further chemical functionalization at the edge and basal plane of graphene has been extensively utilized to modify its properties. The integration and application of graphene devices is facilitated by the combination of graphene preparation, tailoring, and modification. This review focuses on several important strategies for graphene preparation, tailoring, and modification that have recently been developed, providing a foundation for its potential applications.
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Affiliation(s)
- Mingyao Li
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
| | - Bing Yin
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
| | - Chunyan Gao
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Jie Guo
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Cong Zhao
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Chuancheng Jia
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
| | - Xuefeng Guo
- Beijing National Laboratory for Molecular Sciences, National Biomedical Imaging Center, College of Chemistry and Molecular EngineeringPeking UniversityBeijingChina
- Center of Single‐Molecule Sciences, Institute of Modern Optics, Tianjin Key Laboratory of Micro‐scale Optical Information Science and Technology, Frontiers Science Center for New Organic Matter, College of Electronic Information and Optical EngineeringNankai UniversityTianjinChina
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43
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Song J, Liu H, Zhao Z, Guo X, Liu CK, Griggs S, Marks A, Zhu Y, Law HKW, McCulloch I, Yan F. 2D metal-organic frameworks for ultraflexible electrochemical transistors with high transconductance and fast response speeds. SCIENCE ADVANCES 2023; 9:eadd9627. [PMID: 36630506 PMCID: PMC9833676 DOI: 10.1126/sciadv.add9627] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 12/12/2022] [Indexed: 06/17/2023]
Abstract
Electrochemical transistors (ECTs) have shown broad applications in bioelectronics and neuromorphic devices due to their high transconductance, low working voltage, and versatile device design. To further improve the device performance, semiconductor materials with both high carrier mobilities and large capacitances in electrolytes are needed. Here, we demonstrate ECTs based on highly oriented two-dimensional conjugated metal-organic frameworks (2D c-MOFs). The ion-conductive vertical nanopores formed within the 2D c-MOFs films lead to the most convenient ion transfer in the bulk and high volumetric capacitance, endowing the devices with fast speeds and ultrahigh transconductance. Ultraflexible device arrays are successfully used for wearable on-skin recording of electrocardiogram (ECG) signals along different directions, which can provide various waveforms comparable with those of multilead ECG measurement systems for monitoring heart conditions. These results indicate that 2D c-MOFs are excellent semiconductor materials for high-performance ECTs with promising applications in flexible and wearable electronics.
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Affiliation(s)
- Jiajun Song
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Hong Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Zeyu Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Xuyun Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Chun-ki Liu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Sophie Griggs
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, UK
| | - Adam Marks
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, UK
| | - Ye Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
| | - Helen Ka-wai Law
- Department of Health Technology and Informatics Faculty of Health and Social Sciences, The Hong Kong Polytechnic University, Hung Hom, Kowloon 999077, Hong Kong, People’s Republic of China
| | - Iain McCulloch
- Department of Chemistry, University of Oxford, Oxford OX1 3TA, UK
| | - Feng Yan
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, 999077 Hong Kong, People’s Republic of China
- Research Institute of Intelligent Wearable Systems, The Hong Kong Polytechnic University, Hung Hom, Kowloon 999077, Hong Kong, People’s Republic of China
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44
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Ali A, Shin YH. Strain and thickness effects on the electronic structures of low-energy two-dimensional Cd xTe y phases. Phys Chem Chem Phys 2022; 24:29772-29780. [PMID: 36458904 DOI: 10.1039/d2cp04123e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
Abstract
Cadmium telluride (CdTe) has prime importance in photovoltaics due to its direct band gap of 1.45 eV. However, its two-dimensional counterparts have not been fully explored due to polymorphism. We investigated the energy phase diagram of 2D CdxTey (x + y ≤ 8) using state-of-art computational methods and found the phases of CdTe and CdTe2 on and near the energy convex-hull, respectively. Further screening of phonon and ab initio molecular dynamics simulations confirms their experimental viability. These structures reveal promising electronic properties. 2D CdTe has a robust direct band gap unaffected by thickness, monolayer to trilayer and bulk, and strain as high as ±7%. Such robust semiconductors are crucial for device applications because of challenges in the growth of wafer-scale uniform monolayers. In contrast, the direct band gap of 2D transition metal dichalcogenides is highly sensitive to thickness and strain, limiting their usage in devices. The 2D CdTe2 has an indirect band gap whose magnitude is tunable by strain. The robust direct band gap of 2D CdTe and the tunable indirect band gap of CdTe2 make them potential candidates for optoelectronic devices.
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Affiliation(s)
- Asad Ali
- Multiscale Materials Modeling Laboratory, Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
| | - Young-Han Shin
- Multiscale Materials Modeling Laboratory, Department of Physics, University of Ulsan, Ulsan 44610, Republic of Korea.
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45
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Shen Y, Dong Z, Sun Y, Guo H, Wu F, Li X, Tang J, Liu J, Wu X, Tian H, Ren TL. The Trend of 2D Transistors toward Integrated Circuits: Scaling Down and New Mechanisms. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201916. [PMID: 35535757 DOI: 10.1002/adma.202201916] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2022] [Revised: 04/12/2022] [Indexed: 06/14/2023]
Abstract
2D transition metal chalcogenide (TMDC) materials, such as MoS2 , have recently attracted considerable research interest in the context of their use in ultrascaled devices owing to their excellent electronic properties. Microprocessors and neural network circuits based on MoS2 have been developed at a large scale but still do not have an advantage over silicon in terms of their integrated density. In this study, the current structures, contact engineering, and doping methods for 2D TMDC materials for the scaling-down process and performance optimization are reviewed. Devices are introduced according to a new mechanism to provide the comprehensive prospects for the use of MoS2 beyond the traditional complementary-metal-oxide semiconductor in order to summarize obstacles to the goal of developing high-density and low-power integrated circuits (ICs). Finally, prospects for the use of MoS2 in large-scale ICs from the perspectives of the material, system performance, and application to nonlogic functionalities such as sensor circuits and analogous circuits, are briefly analyzed. The latter issue is along the direction of "more than Moore" research.
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Affiliation(s)
- Yang Shen
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Zuoyuan Dong
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Yabin Sun
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Hao Guo
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Fan Wu
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Xianglong Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - Jun Tang
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Jun Liu
- Shanxi Province Key Laboratory of Quantum Sensing and Precision Measurement, School of Instrument and Electronics, North University of China, Taiyuan, Shanxi, 030051, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai, 200241, China
| | - He Tian
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
| | - Tian-Ling Ren
- Institute of Microelectronics and Beijing National Research Center for Information Science and Technology (BNRist) School of Integrated Circuits and Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing, 100084, China
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46
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Ci H, Chen J, Ma H, Sun X, Jiang X, Liu K, Shan J, Lian X, Jiang B, Liu R, Liu B, Yang G, Yin W, Zhao W, Huang L, Gao T, Sun J, Liu Z. Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206389. [PMID: 36208081 DOI: 10.1002/adma.202206389] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2022] [Revised: 09/27/2022] [Indexed: 06/16/2023]
Abstract
The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.
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Affiliation(s)
- Haina Ci
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- College of Electromechanical Engineering, Qingdao University of Science and Technology, Qingdao, 266061, P. R. China
| | - Jingtao Chen
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hao Ma
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Xiaoli Sun
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Xingyu Jiang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Kaicong Liu
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyuan Shan
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Xueyu Lian
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
| | - Bei Jiang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Ruojuan Liu
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Bingzhi Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Guiqi Yang
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wanjian Yin
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Wen Zhao
- School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, P. R. China
| | - Lizhen Huang
- Institute of Functional Nano & Soft Materials, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, 215006, P. R. China
| | - Teng Gao
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
| | - Zhongfan Liu
- College of Energy, Soochow Institute for Energy and Materials Innovations, Light Industry Institute of Electrochemical Power Sources, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute, Beijing, 100095, P. R. China
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
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47
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Kim Y, Han H, Luo D, Ruoff RS, Shin HJ. Decoupling of CVD-grown epitaxial graphene using NaCl intercalation. NANOSCALE 2022; 14:16929-16935. [PMID: 36345667 DOI: 10.1039/d2nr05660g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The structural and electronic properties of graphene grown on catalytic metal surfaces are significantly modified via graphene-substrate interaction. To minimize the influence of the metal substrate, a dielectric buffer layer can be introduced between the graphene and metal substrate. However, the catalytic synthesis of graphene limits the potential alternatives for buffer layers. The intercalation of atoms below the graphene layer is a promising method that does not require the chemical treatment of graphene or the substrate. In this study, the electronic and structural properties of single-layer graphene (SLG) on the Cu(111) substrate intercalated with ultrathin NaCl thin films were investigated using scanning tunnelling microscopy. The intercalation of the NaCl monolayer decoupled SLG from the metal substrate, thereby producing quasi-freestanding graphene.
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Affiliation(s)
- Yohan Kim
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Huijun Han
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
| | - Da Luo
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
| | - Rodney S Ruoff
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Hyung-Joon Shin
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
- Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
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48
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Li J, Samad A, Schwingenschlögl U, Tian B, Lanza M, Zhang X. Morphology-Control Growth of Graphene Islands by Nonlinear Carbon Supply. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206080. [PMID: 36052575 DOI: 10.1002/adma.202206080] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2022] [Revised: 08/18/2022] [Indexed: 06/15/2023]
Abstract
Controlling the morphology of graphene and other 2D materials in chemical vapor deposition (CVD) growth is crucial because the morphology reflects the crystal quality of as-synthesized nanomaterials in a certain way, and consequently it indirectly represents the physical properties of 2D materials such as bandgap, selective ion transportation, and impermeability. However, precise control of the morphology is limited by the complex formation mechanism and sensitive growth-environment factors of graphene. Therefore, the CVD synthesis of single-crystal hexagonal-shaped graphene islands with specific sizes is challenging. Herein, an unconventional nonlinear-carbon-supply growth strategy is proposed to realize controllable CVD growth of desired hexagonal graphene islands with specific sizes on Cu substrates. Large-area graphene films of isolated islands with desired densities, sizes, and distances between the islands are successfully synthesized. Subsequently, the direct growth of a planar-tunnel-junction structure based on two parallel gapped graphene islands is achieved by specific adjustment of the growth and etching processes of graphene CVD synthesis. It is therefore demonstrated that the nonlinear-carbon-supply growth strategy is a reliable method for the synthesis of high-quality graphene and can facilitate the direct growth of graphene-based nanodevices in the future.
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Affiliation(s)
- Junzhu Li
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Abdus Samad
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Udo Schwingenschlögl
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Bo Tian
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Eleven-Dimensional Nanomaterial Research Institute, Xiamen, 361000, China
| | - Mario Lanza
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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49
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Li L, Xia Y, Zeng M, Fu L. Facet engineering of ultrathin two-dimensional materials. Chem Soc Rev 2022; 51:7327-7343. [PMID: 35924550 DOI: 10.1039/d2cs00067a] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Ultrathin two-dimensional (2D) materials exhibit broad application prospects in many fields due to the enhanced specific surface area to volume ratio and quantum confinement effect. Because of the atomic thickness and various orientations, ultrathin 2D materials exposing specific facets have drawn great attention for various applications in catalysis, batteries, optoelectronics, magnetism, epitaxial template for material growth, etc. Though maintaining the atomic thickness of 2D materials while controlling crystal facets is an enormous challenge, breakthroughs are being made. This review provides a comprehensive overview of the recent advances in the facet engineering of 2D materials, ranging from a basic understanding of facets and the corresponding approaches and the significance of facet engineering. We also propose current challenges and forecast future development directions including the establishment of a facet database, the fabrication of new 2D materials, the design of specific substrates, and the introduction of theoretical calculations and in situ characterization techniques. This review can guide researchers to design ultrathin 2D materials with unique and distinct facets and provide an insight into the applications of energy, magnetism, optics, biomedicine, and other fields.
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Affiliation(s)
- Linyang Li
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
| | - Yabei Xia
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
| | - Mengqi Zeng
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China.
| | - Lei Fu
- College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, China. .,The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, China.
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50
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Lu YY, Yang YL, Chuang PY, Jhou J, Hsu JH, Hsieh SH, Chen CH. Operando photoelectron spectroscopy analysis of graphene field-effect transistors. NANOTECHNOLOGY 2022; 33:475702. [PMID: 35940064 DOI: 10.1088/1361-6528/ac87b6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 08/07/2022] [Indexed: 06/15/2023]
Abstract
In this study, operando photoelectron spectroscopy was used to characterize the performance of graphene field-effect transistors under working conditions. By sweeping the back-gate voltages, the carrier concentration of the graphene channel on the 150 nm Si3N4/Si substrate was tuned. From the C1s core level spectra acquired under the application of different gate voltages, the binding energy shifts caused by electric-field effects were obtained and analyzed. Together with the C1s peak shape information and the photoluminescence spectrum of the Si3N4/Si substrate, the presence of local potential across the x-ray beam spot associated with defects and gate leakage current in amorphous Si3N4was identified. The presence of defects in Si3N4/Si substrate could not only screen the partial electric field generated by the back gate but also serve as long-range scattering centers to the carriers, thus affecting charge transport in the graphene channel. Our findings will help further investigate the dielectric/graphene interface properties and accelerate the utilization of graphene in real device applications.
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Affiliation(s)
- Yi-Ying Lu
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Yu-Lun Yang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Pin-Yi Chuang
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Jie Jhou
- Department of Physics, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Jui-Hung Hsu
- Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan
| | - Shang-Hsien Hsieh
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
| | - Chia-Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
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