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Ma K, Sun J, Dou L. Advances and challenges in molecular engineering of 2D/3D perovskite heterostructures. Chem Commun (Camb) 2024. [PMID: 38963168 DOI: 10.1039/d4cc02299h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/05/2024]
Abstract
Organic-inorganic hybrid perovskites have been intensively studied in past decades due to their outstanding performance in solar cells and other optoelectronic devices. Recently, the emergence of two-dimensional/three-dimensional (2D/3D) heterojunctions have enabled many solar cell devices with >25% power conversion efficiency, driven by advances in our understanding of the structural and photophysical properties of the heterojunctions and our ability to control these properties through organic cation configuration in 2D perovskites. In this feature article, we discuss a fundamental understanding of structural characteristics and the carrier dynamics in the 2D/3D heterojunctions and their impact factors. We further elaborate the design strategies for the molecular configuration of organic cations to achieve thorough management of these properties. Finally, recent advances in 2D/3D heterostructures in solar cells, light-emitting devices and photodetectors are highlighted, which translate fundamental understandings to device applications and also reveal the remaining challenges in ligand design for the next generation of stable devices. Future development prospects and related challenges are also provided, with wide perspectives and insightful thoughts.
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Affiliation(s)
- Ke Ma
- Global Institute of Future Technology, Shanghai Jiao Tong University, Shanghai, 200240, China.
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, USA.
| | - Jiaonan Sun
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong 999077, China
- Hong Kong Institute for Clean Energy (HKICE), City University of Hong Kong, Kowloon, Hong Kong 999077, China
| | - Letian Dou
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, USA.
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
- Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, USA
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2
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Li Y, Li F, Yu Z, Tamilavan V, Oh CM, Jeong WH, Shen X, Lee S, Du X, Yang E, Ahn Y, Hwang IW, Lee BR, Park SH. Effective Small Organic Molecule as a Defect Passivator for Highly Efficient Quasi-2D Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308847. [PMID: 38174599 DOI: 10.1002/smll.202308847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 12/13/2023] [Indexed: 01/05/2024]
Abstract
The use of a small organic molecular passivator is proven to be a successful strategy for producing higher-performing quasi-2D perovskite light-emitting diodes (PeLEDs). The small organic molecule can passivate defects on the grain surround and surface of perovskite crystal structures, preventing nonradiative recombination and charge trapping. In this study, a new small organic additive called 2, 8-dibromodibenzofuran (diBDF) is reported and examines its effectiveness as a passivating agent in high-performance green quasi-2D PeLEDs. The oxygen atom in diBDF, acting as a Lewis base, forms coordination bonds with uncoordinated Pb2+, so enhancing the performance of the device. In addition, the inclusion of diBDF in the quasi-2D perovskite results in a decrease in the abundance of low-n phases, hence facilitating efficient carrier mobility. Consequently, PeLED devices with high efficiency are successfully produced, exhibiting an external quantum efficiency of 19.9% at the emission wavelength of 517 nm and a peak current efficiency of 65.0 cd A-1.
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Affiliation(s)
- Ying Li
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Fuqiang Li
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Zhongkai Yu
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | | | - Chang-Mok Oh
- Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Woo Hyeon Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Xinyu Shen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Seongbeom Lee
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
| | - Xiangrui Du
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Eunhye Yang
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - Yoomi Ahn
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
| | - In-Wook Hwang
- Advanced Photonics Research Institute, Gwangju Institute of Science and Technology, Gwangju, 61005, Republic of Korea
| | - Bo Ram Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sung Heum Park
- Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea
- Institute of Energy Transport and Fusion Research, Pukyong National University, Busan, 48513, Republic of Korea
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3
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Chen Q, Cao J, Yang Z, Wang Z, Wang J, Yu S, Hao C, Wang N, Li H, Huang X. Heterointerface engineering of layered double hydroxide/MAPbBr 3 heterostructures enabling tunable synapse behaviors in a two-terminal optoelectronic device. NANOSCALE HORIZONS 2024; 9:1023-1029. [PMID: 38602167 DOI: 10.1039/d4nh00066h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2024]
Abstract
Solution-processable semiconductor heterostructures enable scalable fabrication of high performance electronic and optoelectronic devices with tunable functions via heterointerface control. In particular, artificial optical synapses require interface manipulation for nonlinear signal processing. However, the limited combinations of materials for heterostructure construction have restricted the tunability of synaptic behaviors with simple device configurations. Herein, MAPbBr3 nanocrystals were hybridized with MgAl layered double hydroxide (LDH) nanoplates through a room temperature self-assembly process. The formation of such heterostructures, which exhibited an epitaxial relationship, enabled effective hole transfer from MAPbBr3 to LDH, and greatly reduced the defect states in MAPbBr3. Importantly, the ion-conductive nature of LDH and its ability to form a charged surface layer even under low humidity conditions allowed it to attract and trap holes from MAPbBr3. This imparted tunable synaptic behaviors and short-term plasticity (STP) to long-term plasticity (LTP) transition to a two-terminal device based on the LDH-MAPbBr3 heterostructures. The further neuromorphic computing simulation under varying humidity conditions showcased their potential in learning and recognition tasks under ambient conditions. Our work presents a new type of epitaxial heterostructure comprising metal halide perovskites and layered ion-conductive materials, and provides a new way of realizing charge-trapping induced synaptic behaviors.
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Affiliation(s)
- Qian Chen
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Jiacheng Cao
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
| | - Zhiwei Yang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Zeyi Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Jian Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Shilong Yu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Chenjie Hao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Nana Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Hai Li
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
| | - Xiao Huang
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an 710072, China.
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing 211800, China
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4
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Min H, Wang N, Chen N, Tong Y, Wang Y, Wang J, Liu J, Wang S, Wu X, Yang P, Shi H, Zhuo C, Chen Q, Li J, Zhang D, Lu X, Zhu C, Peng Q, Zhu L, Chang J, Huang W, Wang J. Spin coating epitaxial heterodimensional tin perovskites for light-emitting diodes. NATURE NANOTECHNOLOGY 2024; 19:632-637. [PMID: 38216685 DOI: 10.1038/s41565-023-01588-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Accepted: 11/29/2023] [Indexed: 01/14/2024]
Abstract
Environmentally friendly tin (Sn) perovskites have received considerable attention due to their great potential for replacing their toxic lead counterparts in applications of photovoltaics and light-emitting diodes (LEDs). However, the device performance of Sn perovskites lags far behind that of lead perovskites, and the highest reported external quantum efficiencies of near-infrared Sn perovskite LEDs are below 10%. The poor performance stems mainly from the numerous defects within Sn perovskite crystallites and grain boundaries, leading to serious non-radiative recombination. Various epitaxy methods have been introduced to obtain high-quality perovskites, although their sophisticated processes limit the scalable fabrication of functional devices. Here we demonstrate that epitaxial heterodimensional Sn perovskite films can be fabricated using a spin-coating process, and efficient LEDs with an external quantum efficiency of 11.6% can be achieved based on these films. The film is composed of a two-dimensional perovskite layer and a three-dimensional perovskite layer, which is highly ordered and has a well-defined interface with minimal interfacial areas between the different dimensional perovskites. This unique nanostructure is formed through direct spin coating of the perovskite precursor solution with tryptophan and SnF2 additives onto indium tin oxide glass. We believe that our approach will provide new opportunities for further developing high-performance optoelectronic devices based on heterodimensional perovskites.
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Affiliation(s)
- Hao Min
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Nana Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yunfang Tong
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Yujiao Wang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Jiaqi Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jinglong Liu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Saixue Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Xiao Wu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, China
| | - Pinghui Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Haokun Shi
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Chunxue Zhuo
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Qi Chen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jingwei Li
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Daliang Zhang
- Multi-scale Porous Materials Center, Institute of Advanced Interdisciplinary Studies & School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, China
| | - Xinhui Lu
- Department of Physics, The Chinese University of Hong Kong, Hong Kong, China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China
| | - Jin Chang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Shaanxi Institute of Flexible Electronics (SIFE), Xi'an Institute of Biomedical Materials & Engineering (IBME), Northwestern Polytechnical University (NPU), Xi'an, China.
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, China.
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China.
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China.
- Changzhou University, Changzhou, China.
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5
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Pang H, Du S, Deng J, Kong W, Zhao Y, Zheng B, Ma L. Enhancing Carrier Transport in 2D/3D Perovskite Heterostructures through Organic Cation Fluorination. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401797. [PMID: 38577831 DOI: 10.1002/smll.202401797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/08/2024] [Indexed: 04/06/2024]
Abstract
The interfacial 2D/3D perovskite heterostructures have attracted extensive attention due to their unique ability to combine the high stability of 2D perovskites with the remarkable efficiency of 3D perovskites. However, the carrier transport mechanism within the 2D/3D perovskite heterostructures remains unclear. In this study, the carrier transport dynamics in 2D/3D perovskite heterostructures through a variety of time-resolved spectroscopic measurements is systematically investigated. Time-resolved photoluminescence results reveal nanosecond hole transfer from the 3D to 2D perovskites, with enhanced efficiency through the introduction of fluorine atoms on the phenethylammonium (PEA) cation. Transient absorption measurements unveil the ultrafast picosecond electron and energy transfer from 2D to 3D perovskites. Furthermore, it is demonstrated that the positioning of fluorination on the PEA cations effectively regulates the efficiency of charge and energy transfer within the heterostructures. These insightful findings shed light on the underlying carrier transport mechanism and underscore the critical role of cation fluorination in optimizing carrier transport within 2D/3D perovskite heterostructure-based devices.
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Affiliation(s)
- Haoran Pang
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Shijie Du
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Junpeng Deng
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Wei Kong
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Yilun Zhao
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Bohong Zheng
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
| | - Lin Ma
- School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong University of Technology, Guangzhou, 510006, China
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6
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Niu T, Chao L, Xia Y, Wang K, Ran X, Huang X, Chen C, Wang J, Li D, Su Z, Hu Z, Gao X, Zhang J, Chen Y. Phase-Pure α-FAPbI 3 Perovskite Solar Cells via Activating Lead-Iodine Frameworks. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2309171. [PMID: 38104281 DOI: 10.1002/adma.202309171] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 12/04/2023] [Indexed: 12/19/2023]
Abstract
Narrow bandgap cubic formamidine perovskite (α-FAPbI3 ) is widely studied for its potential to achieve record-breaking efficiency. However, its high preparation difficulty caused by lattice instability is criticized. A popular strategy for stabilizing the α-FAPbI3 lattice is to replace intrinsic FA+ or I- with smaller ions of MA+ , Cs+ , Rb+ , and Br- , whereas this generally leads to broadened optical bandgap and phase separation. Studies show that ions substitution-free phase-pure α-FAPbI3 can achieve intrinsic phase stability. However, the challenging preparation of high-quality films has hindered its further development. Here, a facile synthesis of high-quality MA+ , Cs+ , Rb+ , and Br- -free phase-pure α-FAPbI3 perovskite film by a new solution modification strategy is reported. This enables the activation of lead-iodine (Pb─I) frameworks by forming the coated Pb⋯O network, thus simultaneously promoting spontaneous homogeneous nucleation and rapid phase transition from δ to α phase. As a result, the efficient and stable phase-pure α-FAPbI3 PSC is obtained through a one-step method without antisolvent treatment, with a record efficiency of 23.15% and excellent long-term operating stability for 500 h under continuous light stress.
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Affiliation(s)
- Tingting Niu
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Lingfeng Chao
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Yingdong Xia
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Kaiyu Wang
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Xueqin Ran
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Xiao Huang
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Changshun Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
- Frontiers Science Center for Flexible Electronics, Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Jinpei Wang
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Deli Li
- Fujian Cross Strait Institute of Flexible Electronics (Future Technologies) Fujian Normal University Fuzhou, Fuzhou, 350117, China
| | - Zhenhuang Su
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, P. R. China
| | - Zhelu Hu
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, P. R. China
| | - Jing Zhang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yonghua Chen
- Key Laboratory of Flexible Electronics (KLoFE) and Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, Jiangsu, 211816, China
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7
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Wu B, Zhang Z, Zheng Z, Cai T, You C, Liu C, Li X, Wang Y, Wang J, Li H, Song E, Cui J, Huang G, Mei Y. Self-Rolled-Up Ultrathin Single-Crystalline Silicon Nanomembranes for On-Chip Tubular Polarization Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2306715. [PMID: 37721970 DOI: 10.1002/adma.202306715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2023] [Revised: 09/09/2023] [Indexed: 09/20/2023]
Abstract
Freestanding single-crystalline nanomembranes and their assembly have broad application potential in photodetectors for integrated chips. However, the release and self-assembly process of single-crystalline semiconductor nanomembranes still remains a great challenge in on-chip processing and functional integration, and photodetectors based on nanomembrane always suffer from limited absorption of nanoscale thickness. Here, a non-destructive releasing and rolling process is employed to prepare tubular photodetectors based on freestanding single-crystalline Si nanomembranes. Spontaneous release and self-assembly are achieved by residual strain introduced by lattice mismatch at the epitaxial interface of Si and Ge, and the intrinsic stress and strain distributions in self-rolled-up Si nanomembranes are analyzed experimentally and computationally. The advantages of light trapping and wide-angle optical coupling are realized by tubular geometry. This Si microtube device achieves reliable Ohmic contact and exhibits a photoresponsivity of over 330 mA W-1 , a response time of 370 µs, and a light incident detection angle range of over 120°. Furthermore, the microtubular structure shows a distinct polarization angle-dependent light absorption, with a dichroic ratio of 1.24 achieved at 940 nm. The proposed Si-based microtubes provide new possibilities for the construction of multifunctional chips for integrated circuit ecosystems in the More than Moore era.
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Affiliation(s)
- Binmin Wu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Ziyu Zhang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Zhi Zheng
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Tianjun Cai
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Chunyu You
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Chang Liu
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Xing Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Yang Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Jinlong Wang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Hongbin Li
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
| | - Enming Song
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
| | - Jizhai Cui
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
| | - Gaoshan Huang
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
| | - Yongfeng Mei
- Department of Materials Science & State Key Laboratory of ASIC and Systems, Fudan University, Shanghai, 200438, P. R. China
- Yiwu Research Institute of Fudan University, Yiwu, 322000, P. R. China
- International Institute of Intelligent Nanorobots and Nanosystems, Fudan University, Shanghai, 200438, P. R. China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200438, P. R. China
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8
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Tang J, Ge F, Chen J, Zhou D, Zhan G, Liu J, Yuan J, Shi X, Zhao P, Fan X, Su Y, Liu Z, He J, Tang J, Zha C, Zhang L, Song X, Wang L. A Droplet Method for Synthesis of Multiclass Ultrathin Metal Halides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301573. [PMID: 37365697 DOI: 10.1002/smll.202301573] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2023] [Revised: 05/28/2023] [Indexed: 06/28/2023]
Abstract
2D metal halides have attracted increasing research attention in recent years; however, it is still challenging to synthesize them via liquid-phase methods. Here it is demonstrated that a droplet method is simple and efficient for the synthesis of multiclass 2D metal halides, including trivalent (BiI3 , SbI3 ), divalent (SnI2 , GeI2 ), and monovalent (CuI) ones. In particular, 2D SbI3 is first experimentally achieved, of which the thinnest thickness is ≈6 nm. The nucleation and growth of these metal halide nanosheets are mainly determined by the supersaturation of precursor solutions that are dynamically varying during the solution evaporation. After solution drying, the nanosheets can fall on the surface of many different substrates, which further enables the feasible fabrication of related heterostructures and devices. With SbI3 /WSe2 being a good demonstration, the photoluminescence intensity and photo responsivity of WSe2 is obviously enhanced after interfacing with SbI3 . The work opens a new pathway for 2D metal halides toward widespread investigation and applications.
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Affiliation(s)
- Jin Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Feixiang Ge
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jinlian Chen
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Dawei Zhou
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Guixiang Zhan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jing Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaxiao Yuan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinyu Shi
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Peiyi Zhao
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xinlin Fan
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Yu Su
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Zicong Liu
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiahao He
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Jiaqi Tang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Chenyang Zha
- Institute of Applied Physics and Materials Engineering (IAPME), Zhuhai UM Science & Technology Research Institute (ZUMRI), University of Macau, Taipa, Macau SAR, 999078, China
| | - Linghai Zhang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Xuefen Song
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (Nanjing Tech), Nanjing, 211816, China
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9
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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10
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Lin Z, Lin Z, Guo Y, Wu H, Song J, Zhang Y, Zhang W, Li H, Hou D, Huang R. Effect of a-SiC xN y:H Encapsulation on the Stability and Photoluminescence Property of CsPbBr 3 Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13071228. [PMID: 37049319 PMCID: PMC10097036 DOI: 10.3390/nano13071228] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2023] [Revised: 03/28/2023] [Accepted: 03/29/2023] [Indexed: 06/12/2023]
Abstract
The effect of a-SiCxNy:H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH4, CH4, and NH3 as the precursors, on the stability and photoluminescence of CsPbBr3 quantum dots (QDs) were investigated in this study. The results show that a-SiCxNy:H encapsulation layers containing a high N content of approximately 50% cause severe PL degradation of CsPbBr3 QDs. However, by reducing the N content in the a-SiCxNy:H layer, the PL degradation of CsPbBr3 QDs can be significantly minimized. As the N content decreases from around 50% to 26%, the dominant phase in the a-SiCxNy:H layer changes from SiNx to SiCxNy. This transition preserves the inherent PL characteristics of CsPbBr3 QDs, while also providing them with long-term stability when exposed to air, high temperatures (205 °C), and UV illumination for over 600 days. This method provided an effective and practical approach to enhance the stability and PL characteristics of CsPbBr3 QD thin films, thus holding potential for future developments in optoelectronic devices.
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Affiliation(s)
- Zewen Lin
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
- National Laboratory of Solid State Microstructures/School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Zhenxu Lin
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Yanqing Guo
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Haixia Wu
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Jie Song
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Yi Zhang
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Wenxing Zhang
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Hongliang Li
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Dejian Hou
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
| | - Rui Huang
- School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China; (Z.L.)
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11
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Xie R, Zeng X, Jiang ZH, Hu Y, Lee SL. STM Study of the Self-Assembly of Biphenyl-3,3',5,5'-Tetracarboxylic Acid and Its Mixing Behavior with Coronene at the Liquid-Solid Interface. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:3637-3644. [PMID: 36867761 DOI: 10.1021/acs.langmuir.2c03199] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
We report a scanning tunneling microscopy (STM) study of the molecular self-assembly of biphenyl-3,3',5,5'-tetracarboxylic acid (BPTC) at the octanoic acid/graphite interface. STM revealed that the BPTC molecules generated stable bilayers and monolayers under high and low sample concentrations, respectively. Besides hydrogen bonds, the bilayers were stabilized by molecular π-stacking, whereas the monolayers were maintained by solvent co-adsorption. A thermodynamically stable Kagomé structure was obtained upon mixing BPTC with coronene (COR), while kinetic trapping of COR in the co-crystal structure was found by the subsequent deposition of COR onto a preformed BPTC bilayer on the surface. Force field calculation was conducted to compare the binding energies of different phases, which helped to provide plausible explanations for the structural stability formed via kinetic and thermodynamic pathways.
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Affiliation(s)
- Rongbin Xie
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong, China
- College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, Guangdong, China
| | - Xingming Zeng
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong, China
| | - Zhi-Heng Jiang
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong, China
| | - Yi Hu
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong, China
| | - Shern-Long Lee
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, Guangdong, China
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12
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Zhu Z, Li Y, Guan Z, Wu Y, Zeng Z, Tsang SW, Liu S, Huang X, Lee CS. Spatial Control of the Hole Accumulation Zone for Hole-Dominated Perovskite Light-Emitting Diodes by Inserting a CsAc Layer. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7044-7052. [PMID: 36705641 DOI: 10.1021/acsami.2c19230] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Perovskites show efficient electroluminescence and are expected to have wide applications in light-emitting diodes (LEDs). However, owing to the unbalanced electron-hole transport properties of some highly luminescent perovskites, a fundamental challenge is that the exciton recombination zone of perovskite LEDs (PeLEDs) typically overlaps with an accumulation of the major carrier. It is known to reduce the performances of PeLEDs, leading to a reduction of efficiency and operation stability due to Auger recombination. To address this issue in a hole-dominated blue PeLED, we propose to insert a cesium acetate (CsAc) layer between the hole transport layer (HTL) and the hole-dominant perovskite layer. Electronic properties indicate that the hole accumulation zone of the device with the CsAc layer shifts away from the perovskite/ETL interface, i.e., the recombination zone, to the HTL/CsAc interface. Separation of the hole accumulation region and the exciton recombination zones substantially suppresses exciton quenching. Moreover, the CsAc layer can also improve the photophysical properties of the perovskite film by providing an extra Cs source to interact with the defect site of unreacted PbBr2 in the perovskite film and enhance the crystallinity of the perovskite with an enlarged crystal grain size. As a result, the external quantum efficiency (EQE) of the sky-blue PeLEDs shows considerable improvement from 5.3 to 9.2% upon inserting the CsAc layer.
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Affiliation(s)
- Zhaohua Zhu
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 000000, P. R. China
- Department of Chemistry, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Yang Li
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 000000, P. R. China
- Department of Chemistry, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Zhiqiang Guan
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 000000, P. R. China
- Department of Chemistry, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Yan Wu
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 000000, P. R. China
- Department of Chemistry, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Zixin Zeng
- Department of Material Science and Engineering, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Sai-Wing Tsang
- Department of Material Science and Engineering, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Shihao Liu
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 000000, P. R. China
- Department of Chemistry, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
| | - Xiao Huang
- Institute of Advanced Materials (IAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, P. R. China
| | - Chun-Sing Lee
- Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong SAR 000000, P. R. China
- Department of Chemistry, City University of Hong Kong, Kowloon 000000, Hong Kong SAR, P. R. China
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13
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Zhu Z, Zeng S, Chen Q, Yang L, Wei C, Chen B, Yu H, Li H, Zhang J, Huang X. One-step synthesis of epitaxial 3D/2D metal halide perovskite heterostructures. Chem Commun (Camb) 2022; 58:13775-13778. [PMID: 36426914 DOI: 10.1039/d2cc05150h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
Facile and scalable synthesis of perovskite heterostructures with well-controlled heterointerfaces remains challenging. Herein, we developed a simple one-step solution method to prepare 3D/2D CsPbBr3/PEA2PbBr4 perovskite heterostructures with a well-defined epitaxial structure in the gram scale. The formation mechanism was detailed by using in situ time-resolved photoluminescence (PL) spectroscopy analysis. In addition, a series of 3D/2D epitaxial heterostructures were also prepared by changing the organic cations or halogen anions. Due to the effective charge separation and transfer, photodetectors based on the type-II 3D/2D CsPbBr3/PEA2PbBr4 heterostructures showed up to 120 times higher photoresponsivities and 50 times higher on/off ratios compared to devices based on single component perovskites.
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Affiliation(s)
- Zhaohua Zhu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China. .,Department of Chemistry, City University of Hong Kong, Hong Kong SAR 999077, P. R. China
| | - Shaoyu Zeng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Qian Chen
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NWPU), 127 West Youyi Road, Xi'an 710072, P. R. China
| | - Lei Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Cong Wei
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR 999077, P. R. China
| | - Haidong Yu
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NWPU), 127 West Youyi Road, Xi'an 710072, P. R. China
| | - Hai Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Jian Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
| | - Xiao Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing 211816, China.
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14
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De Bastiani M, Grancini G. Rising of halide perovskite epitaxial structures. NATURE MATERIALS 2022; 21:1000-1002. [PMID: 36002719 DOI: 10.1038/s41563-022-01331-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Affiliation(s)
| | - Giulia Grancini
- Department of Chemistry and INSTM, University of Pavia, Pavia, Italy.
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