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Lee YR, Chung YT, Chiang TY, Hsieh T, Su YH, Wang JK. Unraveling Halogen Role in Two-Step Solution Growth of Organic-Inorganic Hybrid Mixed-Halide Perovskites: Guidelines of Fabricating Single-Phase Perovskites with Predictable Stoichiometry. ACS OMEGA 2024; 9:26439-26449. [PMID: 38911784 PMCID: PMC11190909 DOI: 10.1021/acsomega.4c02650] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/18/2024] [Revised: 05/13/2024] [Accepted: 05/27/2024] [Indexed: 06/25/2024]
Abstract
The challenge faced in optoelectronic applications of halide perovskites is their degradation. Minimizing material imperfections is critical to averting cascade degradation processes. Identifying causes of such imperfections is, however, hindered by mystified growth processes and is particularly urgent for mixed-halide perovskites because of inhomogeneity in growth and phase segregation under stresses. To unravel two-step solution growth of MAPbBr x I3-x , we monitored the evolution of Br composition and found that the construction of perovskite lattice is contributed by iodine from PbI2 substrate and Br from MABr solution with a 1:1 ratio rather than a 2:1 ratio originally thought. Kinetic analysis based on a derived three-stage model extracted activation energies of perovskite construction and anion exchange. This model is applicable to the growth of PbI2 reacting with a mixed solution of MABr and MAI. Two guidelines of fabricating single-phase MAPbBr x I3-x with predictable stoichiometry thus developed help strategizing protocols to reproducibly fabricate mixed-halide perovskite films tailored to specific optoelectronic applications.
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Affiliation(s)
- Ya-Rong Lee
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 10617, Taiwan
| | - Yun-Ting Chung
- Department
of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Tsung-Yu Chiang
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 10617, Taiwan
| | - Ta−Li Hsieh
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 10617, Taiwan
| | - Yi-Hang Su
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 10617, Taiwan
| | - Juen-Kai Wang
- Institute
of Atomic and Molecular Sciences, Academia
Sinica, Taipei 10617, Taiwan
- Center
for Condensed Matter Sciences, National
Taiwan University, Taipei 106, Taiwan
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2
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Dong S, Hu Y, Zhang X, Guo Z, Chen R, Mao L. Anisotropy of Anion Diffusion in All-Inorganic Perovskite Single Crystals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307360. [PMID: 38217294 DOI: 10.1002/smll.202307360] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 01/02/2024] [Indexed: 01/15/2024]
Abstract
Ion diffusion is a fundamentally important process in understanding and manipulating the optoelectronic properties of semiconductors. Most current studies on ionic diffusion have been focusing on perovskite polycrystalline thin films and nanocrystals. However, the random orientation and grain boundaries can heavily interfere with the kinetics of ion diffusion, where the experimental results only reveal the average ion exchange kinetics and the actual ion diffusion mechanisms perpendicular to the direction of individual crystal facets remain unclear. Here, the anion (Cl, I) diffusion anisotropy on (111) and (100) facets of CsPbBr3 single crystals is demonstrated. The as-grown single crystals with (111) and (100) facets exhibit anisotropic growth with different halide incorporation, which lead to different resulting optoelectronic properties. Combined experimental characterizations and theoretical calculations reveal that the (111) CsPbBr3 shows a faster anion diffusion behavior compared with that of the (100) CsPbBr3, with a lower diffusion energy barrier, a larger built-in electric field, and lower inverse defect formation energy. The work highlights the anion diffusion anisotropic mechanisms perpendicular to the direction of individual crystal facets for optimizing and designing perovskite optoelectronic devices.
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Affiliation(s)
- Shunhong Dong
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Yaoqiao Hu
- Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA
| | - Xuanyu Zhang
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Zhu Guo
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Rui Chen
- Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
| | - Lingling Mao
- Department of Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, P. R. China
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3
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Wang Z, Cao X, Yang H, Kuang Z, Yang P, Zhang G, Zhang Y, Xu L, Zhang D, Li S, Miao C, Wang N, Huang W, Wang J. Kornblum Oxidation Reaction-Induced Collective Transformation of Lead Polyhalides for Stable Perovskite Photovoltaics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2401916. [PMID: 38531655 DOI: 10.1002/adma.202401916] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2024] [Revised: 03/11/2024] [Indexed: 03/28/2024]
Abstract
The iodide vacancy defects generated during the perovskite crystallization process are a common issue that limits the efficiency and stability of perovskite solar cells (PSCs). Although excessive ionic iodides have been used to compensate for these vacancies, they are not effective in reducing defects through modulating the perovskite crystallization. Moreover, these iodide ions present in the perovskite films can act as interstitial defects, which are detrimental to the stability of the perovskite. Here, an effective approach to suppress the formation of vacancy defects by manipulating the coordination chemistry of lead polyhalides during perovskite crystallization is demonstrated. To achieve this suppression, an α-iodo ketone is introduced to undergo a process of Kornblum oxidation reaction that releases halide ions. This process induces a rapid collective transformation of lead polyhalides during the nucleation process and significantly reduces iodide vacancy defects. As a result, the ion mobility is decreased by one order of magnitude in perovskite film and the PSC achieves significantly improved thermal stability, maintaining 82% of its initial power conversion efficiency at 85 °C for 2800 h. These findings highlight the potential of halide ions released by the Kornblum oxidation reaction, which can be widely used for achieving high-performance perovskite optoelectronics.
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Affiliation(s)
- Zhen Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Xuejing Cao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Heng Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Pinghui Yang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Guolin Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yuyang Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lei Xu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Daiji Zhang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Sunsun Li
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Chunyang Miao
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
- Fujian Normal University, Fuzhou, 350117, China
- Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- School of Materials Science and Engineering & School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
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Gong C, Wang C, Meng X, Fan B, Xing Z, Shi S, Hu T, Huang Z, Hu X, Chen Y. An Equalized Flow Velocity Strategy for Perovskite Colloidal Particles in Flexible Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405572. [PMID: 38809575 DOI: 10.1002/adma.202405572] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 05/21/2024] [Indexed: 05/30/2024]
Abstract
The non-uniform distribution of colloidal particles in perovskite precursor results in an imbalanced response to the shear force during flexible printing process. Herein, it is observed that the continuous disordered migration occurring in perovskite inks significantly contributes to the enlargement of colloidal particles size and diminishes the crystallization activity of the inks. Therefore, a molecular encapsulation architecture by glycerol monostearate to mitigate colloidal particles collisions in the precursor ink, while simultaneously homogenizing the size distribution of perovskite colloids to minimize their diffusion disparities, is devised. The utilization of colloidal particles with a molecular encapsulation structure enables the achievement of uniform deposition during the printing process, thereby effectively balancing the crystallization rate and phase transition in the film and facilitating homogeneous crystallization of perovskite films. The large-area flexible perovskite device (1.01 cm2 and 100 cm2) fabricated through printing processes, achieves an efficiency of 24.45% and 15.87%, respectively, and manifests superior environmental stability, maintaining an initial efficiency of 91% after being stored in atmospheric ambiences for 150 days (unencapsulated). This work demonstrates that the dynamic evolution process of colloidal particles in both the precursor ink and printing process represents a crucial stride toward achieving uniform crystallization of perovskite films.
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Affiliation(s)
- Chenxiang Gong
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Cong Wang
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Xiangchuan Meng
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Baojin Fan
- College of Chemistry and Chemical Engineering/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang, 330022, China
| | - Zhi Xing
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Siyi Shi
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Ting Hu
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Zengqi Huang
- College of Chemistry and Chemical Engineering/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang, 330022, China
| | - Xiaotian Hu
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
| | - Yiwang Chen
- College of Chemistry and Chemical Engineering/ Film Energy Chemistry for Jiangxi Provincial Key Laboratory (FEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
- College of Chemistry and Chemical Engineering/Key Lab of Fluorine and Silicon for Energy Materials and Chemistry of Ministry of Education, Jiangxi Normal University, 99 Ziyang Avenue, Nanchang, 330022, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, 226010, China
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Vigil J, Wolf NR, Slavney AH, Matheu R, Saldivar Valdes A, Breidenbach A, Lee YS, Karunadasa HI. Halide Perovskites Breathe Too: The Iodide-Iodine Equilibrium and Self-Doping in Cs 2SnI 6. ACS CENTRAL SCIENCE 2024; 10:907-919. [PMID: 38680557 PMCID: PMC11046464 DOI: 10.1021/acscentsci.4c00056] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/11/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 05/01/2024]
Abstract
The response of an oxide crystal to the atmosphere can be personified as breathing-a dynamic equilibrium between O2 gas and O2- anions in the solid. We characterize the analogous defect reaction in an iodide double-perovskite semiconductor, Cs2SnI6. Here, I2 gas is released from the crystal at room temperature, forming iodine vacancies. The iodine vacancy defect is a shallow electron donor and is therefore ionized at room temperature; thus, the loss of I2 is accompanied by spontaneous n-type self-doping. Conversely, at high I2 pressures, I2 gas is resorbed by the perovskite, consuming excess electrons as I2 is converted to 2I-. Halide mobility and irreversible halide loss or exchange reactions have been studied extensively in halide perovskites. However, the reversible exchange equilibrium between iodide and iodine [2I-(s) ↔ I2(g) + 2e-] described here has often been overlooked in prior studies, though it is likely general to halide perovskites and operative near room temperature, even in the dark. An analysis of the 2I-(s)/I2(g) equilibrium thermodynamics and related transport kinetics in single crystals of Cs2SnI6 therefore provides insight toward achieving stable composition and electronic properties in the large family of iodide perovskite semiconductors.
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Affiliation(s)
- Julian
A. Vigil
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
- Department
of Chemical Engineering, Stanford University, Stanford, California 94305, United States
| | - Nathan R. Wolf
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Adam H. Slavney
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | - Roc Matheu
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
| | | | - Aaron Breidenbach
- Department
of Physics, Stanford University, Stanford, California 94305, United States
- Stanford
Institute for Materials and Energy Sciences, SLAC National Laboratory, Menlo
Park, California 94025, United States
| | - Young S. Lee
- Department
of Applied Physics, Stanford University, Stanford, California 94305, United States
- Stanford
Institute for Materials and Energy Sciences, SLAC National Laboratory, Menlo
Park, California 94025, United States
| | - Hemamala I. Karunadasa
- Department
of Chemistry, Stanford University, Stanford, California 94305, United States
- Stanford
Institute for Materials and Energy Sciences, SLAC National Laboratory, Menlo
Park, California 94025, United States
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6
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Moia D, Jung M, Wang YR, Maier J. Ionic and electronic polarization effects in horizontal hybrid perovskite device structures close to equilibrium. Phys Chem Chem Phys 2023; 25:13335-13350. [PMID: 37144574 DOI: 10.1039/d3cp01182h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
The electrical response of hybrid perovskite devices carries a significant signature from mobile ionic defects, pointing to both opportunities and threats when it comes to functionality, performance and stability of these devices. Despite its importance, the interpretation of polarization effects due to the mixed ionic-electronic conducting nature of these materials and the quantification of their ionic conductivities still poses conceptual and practical challenges, even for the equilibrium situation. In this study, we address these questions and investigate the electrical response of horizontal devices based on methylammonium lead iodide (MAPI) close to equilibrium conditions. We discuss the interpretation of DC polarization and impedance spectroscopy measurements in the dark, based on calculated and fitted impedance spectra obtained using equivalent circuit models that account for the mixed conductivity of the perovskite and for the effect of device geometry. Our results show that, for horizontal structures with a gap width between the metal electrodes in the order of tens of microns, the polarization behavior of MAPI is well described by the charging of the mixed conductor/metal interface, suggesting a Debye length in the perovskite close to 1 nm. We highlight a signature in the impedance response at intermediate frequencies, which we assign to ionic diffusion in the plane parallel to the MAPI/contact interface. By comparing the experimental impedance results with calculated spectra for different circuit models, we discuss the potential role of multiple mobile ionic species and rule out a significant contribution from iodine exchange with the gas phase in the electrical response of MAPI close to equilibrium. This study helps to clarify the measurement and interpretation of mixed conductivity and polarization effects in hybrid perovskites with immediate relevance to the characterization and development of transistors, memristors and solar cells based on this class of materials as well as other mixed conductors.
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Affiliation(s)
- Davide Moia
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Mina Jung
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Ya-Ru Wang
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
| | - Joachim Maier
- Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569, Stuttgart, Germany.
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