Axion optical induction of antiferromagnetic order

Towards the quantized anomalous Hall effect in AlOx-capped MnBi2Te4

The quantum anomalous Hall effect in layered antiferromagnet MnBi2Te4 harbors a rich interplay between magnetism and topology, holding a significant promise for low-power electronic devices and topological antiferromagnetic spintronics. In recent years, MnBi2Te4 has garnered considerable attention as the only known material to exhibit the antiferromagnetic quantum anomalous Hall effect. However, this field faces significant challenges as the quantization at zero magnetic field depending critically on fabricating high-quality devices. In this article, we introduce a straightforward yet effective method to mitigate the detrimental effect of the standard fabrication on MnBi2Te4 by depositing an AlOx layer on the surface before fabrication. Optical contrast and magnetotransport measurements on over 50 MnBi2Te4 demonstrate that AlOx can effectively preserve the pristine states of the devices. Surprisingly, we find this simple method can significantly enhance the anomalous Hall effect towards quantization, which resolves a longstanding challenge in the field of MnBi2Te4. Scaling relation analysis further reveals the intrinsic mechanism of anomalous Hall effect dominated by Berry curvature at various magnetic configuration. By tuning the gate voltage, we uncover a gate independent magnetism in odd-layer MnBi2Te4 devices. Our experiments not only pave the way for the fabrication of high-quality dissipationless transport devices, but also advance the investigation of exotic topological quantum phenomena in 2D materials.

Nonvolatile Ferroic and Topological Phase Control under Nonresonant Light

Light-matter interaction is a long-standing promising topic that can be dated back to a few centuries ago and has witnessed the long-term debate between the particle and wave nature of light. In modern condensed matter physics and materials science, light usually serves as a detection tool to effectively characterize the physical and chemical features of samples. The light modulation on intrinsic properties of materials, such as atomic geometries, electronic bands, and magnetic behaviors, is more intriguing for information control and storage. This corresponds to a light-induced order parameter switch in the phase space. Most prior works focus on the situation when photon energy is larger than the material band gap, in which the photon is absorbed by the electron subsystem and then transfers its energy into other subsystems such as phonon and spin. This can be described by the imaginary part of the dielectric function. In contrast, recent theoretical predictions and experimental advances have suggested that the real part of dielectric function could also vary the energy landscape in phase space, so that it triggers phase transition in an athermic approach (without direct photon absorption). In this Perspective, we review some recent theoretical, computational, and experimental developments of such a low-frequency light-induced phase transition, focusing on ferroic and topological order parameters. We also elucidate its fundamental mechanisms by comparing it with the optical tweezers technique, and light irradiation could trigger impulsive stimulated Raman phonon excitation. Finally, we propose some further developments and challenges in such a nonresonant light-matter interaction.

Ubiquitous Order-Disorder Transition in the Mn Antisite Sublattice of the (MnBi2Te4)(Bi2Te3)n Magnetic Topological Insulators

Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi2Te4)(Bi2Te3)n layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this material platform is enabled by manganese-pnictogen intermixing, whose amounts and distribution patterns are controlled by synthetic conditions. Here, nuclear magnetic resonance and muon spin spectroscopy, sensitive local probe techniques, are employed to scrutinize the impact of the intermixing on the magnetic properties of (MnBi2Te4)(Bi2Te3)n and MnSb2Te4. The measurements not only confirm the opposite alignment between the Mn magnetic moments on native sites and antisites in the ground state of MnSb2Te4, but for the first time directly show the same alignment in (MnBi2Te4)(Bi2Te3)n with n = 0, 1 and 2. Moreover, for all compounds, the static magnetic moment of the Mn antisite sublattice is found to disappear well below the intrinsic magnetic transition temperature, leaving a homogeneous magnetic structure undisturbed by the intermixing. The findings provide a microscopic understanding of the crucial role played by Mn-Bi intermixing in (MnBi2Te4)(Bi2Te3)n and offer pathways to optimizing the magnetic gap in its surface states.

Distinguishing surface and bulk electromagnetism via their dynamics in an intrinsic magnetic topological insulator

The indirect exchange interaction between local magnetic moments via surface electrons has been long predicted to bolster the surface ferromagnetism in magnetic topological insulators (MTIs), which facilitates the quantum anomalous Hall effect. This unconventional effect is critical to determining the operating temperatures of future topotronic devices. However, the experimental confirmation of this mechanism remains elusive, especially in intrinsic MTIs. Here, we combine time-resolved photoemission spectroscopy with time-resolved magneto-optical Kerr effect measurements to elucidate the unique electromagnetism at the surface of an intrinsic MTI MnBi2Te4. Theoretical modeling based on 2D Ruderman-Kittel-Kasuya-Yosida interactions captures the initial quenching of a surface-rooted exchange gap within a factor of two but overestimates the bulk demagnetization by one order of magnitude. This mechanism directly explains the sizable gap in the quasi-2D electronic state and the nonzero residual magnetization in even-layer MnBi2Te4. Furthermore, it leads to efficient light-induced demagnetization comparable to state-of-the-art magnetophotonic crystals, promising an effective manipulation of magnetism and topological orders for future topotronics.

Light-Induced Topological Phase Transition with Tunable Layer Hall Effect in Axion Antiferromagnets

The intricate interplay between light and matter provides effective tools for manipulating topological phenomena. Here, we theoretically propose and computationally show that circularly polarized light holds the potential to transform the axion insulating phase into a quantum anomalous Hall state in MnBi2Te4 thin films, featuring tunable Chern numbers (ranging up to ±2). In particular, we reveal the spatial rearrangement of the hidden layer-resolved anomalous Hall effect under light-driven Floquet engineering. Notably, upon Bi2Te3 layer intercalation, the anomalous Hall conductance predominantly localizes in the nonmagnetic Bi2Te3 layers that hold zero Berry curvature in the intact state, suggesting a significant magnetic proximity effect. Additionally, we estimate variations in the magneto-optical Kerr effect, giving a contactless method for detecting topological transitions. Our work not only presents a strategy to investigate emergent topological phases but also sheds light on the possible applications of the layer Hall effect in topological antiferromagnetic spintronics.

Dissipationless layertronics in axion insulator MnBi2Te4

Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic [Formula: see text] with tailored domain structure. This makes [Formula: see text] a versatile platform to exploit the 'layertronics' to encode, process and store information. Importantly, the layer filter, layer valve and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of the Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low-energy consumption in the framework of layertronics.

Fabrication-induced even-odd discrepancy of magnetotransport in few-layer MnBi2Te4

The van der Waals antiferromagnetic topological insulator MnBi2Te4 represents a promising platform for exploring the layer-dependent magnetism and topological states of matter. Recently observed discrepancies between magnetic and transport properties have aroused controversies concerning the topological nature of MnBi2Te4 in the ground state. In this article, we demonstrate that fabrication can induce mismatched even-odd layer dependent magnetotransport in few-layer MnBi2Te4. We perform a comprehensive study of the magnetotransport properties in 6- and 7-septuple-layer MnBi2Te4, and reveal that both even- and odd-number-layer device can show zero Hall plateau phenomena in zero magnetic field. Importantly, a statistical survey of the optical contrast in more than 200 MnBi2Te4 flakes reveals that the zero Hall plateau in odd-number-layer devices arises from the reduction of the effective thickness during the fabrication, a factor that was rarely noticed in previous studies of 2D materials. Our finding not only provides an explanation to the controversies regarding the discrepancy of the even-odd layer dependent magnetotransport in MnBi2Te4, but also highlights the critical issues concerning the fabrication and characterization of 2D material devices.

Electrically Controlled Anomalous Hall Effect and Orbital Magnetization in Topological Magnet MnBi_{2}Te_{4}

We propose an intrinsic mechanism to understand the even-odd effect, namely, opposite signs of anomalous Hall resistance and different shapes of hysteresis loops for even and odd septuple layers (SLs), of MBE-grown MnBi_{2}Te_{4} thin films with electron doping. The nonzero hysteresis loops in the anomalous Hall effect and magnetic circular dichroism for even-SLs MnBi_{2}Te_{4} films originate from two different antiferromagnetic (AFM) configurations with different zeroth Landau level energies of surface states. The complex form of the anomalous Hall hysteresis loop can be understood from two magnetic transitions, a transition between two AFM states followed by a second transition to the ferromagnetic state. Our model also clarifies the relationship and distinction between axion parameter and magnetoelectric coefficient, and shows an even-odd oscillation behavior of magnetoelectric coefficients in MnBi_{2}Te_{4} films.

Detecting Magnetoelectric Effect in a Metallic Antiferromagnet via Nonreciprocal Rotation of Reflected Light

Certain types of media breaking both space-inversion (P) and time-reversal (T) symmetries but preserving their combination PT exhibit the polarization rotation of reflected light even when that of transmitted light is prohibited. Such an effect is termed nonreciprocal rotation of reflected light (NRR). Although NRR shows nearly the same phenomenon as the magnetooptical Kerr effect or, equivalently, the Hall effect at optical frequencies, its origin is distinct and ascribed to a magnetoelectric (ME) effect at optical frequencies, i.e., the optical ME effect. Here we show the observation of NRR in a metallic antiferromagnet TbB_{4}. The result demonstrates that the ME effect in a metallic system, which is considered to be ill defined, can be detected using reflected light. Furthermore, we spatially resolve antiferromagnetic domains in TbB_{4} by microscope observations of NRR. Our work offers a unique way to probe the ME effect in metallic systems.

Real-time observation of magnetization and magnon dynamics in a two-dimensional topological antiferromagnet MnBi2Te4

Atomically thin van der Waals magnetic materials have not only provided a fertile playground to explore basic physics in the two-dimensional (2D) limit but also created vast opportunities for novel ultrafast functional devices. Here we systematically investigate ultrafast magnetization dynamics and spin wave dynamics in few-layer topological antiferromagnetic MnBi2Te4 crystals as a function of layer number, temperature, and magnetic field. We find laser-induced (de)magnetization processes can be used to accurately track the distinct magnetic states in different magnetic field regimes, including showing clear odd-even layer number effects. In addition, strongly field-dependent AFM magnon modes with tens of gigahertz frequencies are optically generated and directly observed in the time domain. Remarkably, we find that magnetization and magnon dynamics can be observed in not only the time-resolved magneto-optical Kerr effect but also the time resolved reflectivity, indicating strong correlation between the magnetic state and electronic structure. These measurements present the first comprehensive overview of ultrafast spin dynamics in this novel 2D antiferromagnet, paving the way for potential applications in 2D antiferromagnetic spintronics and magnonics as well as further studies of ultrafast control of both magnetization and topological quantum states.