Auxetic piezoelectric effect in heterostructures

Pyroelectric Photoconductive Diode for Highly Sensitive and Fast DUV Detection

Detecting high-energy photons from the deep ultraviolet (DUV) to X-rays is vital in security, medicine, industry, and science. Wide bandgap (WBG) semiconductors exhibit great potential for detecting high-energy photons. However, the implementation of highly sensitive and high-speed detectors based on WBG semiconductors has been a huge challenge due to the inevitable deep level traps and the lack of appropriate device structure engineering. Here, a sensitive and fast pyroelectric photoconductive diode (PPD), which couples the interface pyroelectric effect with the photoconductive effect based on tailored polycrystal Ga-rich GaOx (PGR-GaOx) Schottky photodiode, is first proposed. The PPD device exhibits ultrahigh detection performance for DUV and X-ray light. The responsivity for DUV light and sensitivity for X-ray are up to 104 A W-1 and 105 µC Gyair -1 cm-2, respectively. Especially, the interface pyroelectric effect induced by polar symmetry in the depletion region of the PGR-GaOx can significantly improve the response speed of the device by 105 times. Furthermore, the potential of the device is demonstrated for imaging enhancement systems with low power consumption and high sensitivity. This work fully excavates the potential of the pyroelectric effect for detectors and provides a novel design strategy to achieve sensitive and high-speed detectors.

Enhanced Generation of Reactive Oxygen Species via Piezoelectrics based on p-n Heterojunctions with Built-In Electric Field

Tuning the charge transfer processes through a built-in electric field is an effective way to accelerate the dynamics of electro- and photocatalytic reactions. However, the coupling of the built-in electric field of p-n heterojunctions and the microstrain-induced polarization on the impact of piezocatalysis has not been fully explored. Herein, we demonstrate the role of the built-in electric field of p-type BiOI/n-type BiVO4 heterojunctions in enhancing their piezocatalytic behaviors. The highly crystalline p-n heterojunction is synthesized by using a coprecipitation method under ambient aqueous conditions. Under ultrasonic irradiation in water exposed to air, the p-n heterojunctions exhibit significantly higher production rates of reactive species (·OH, ·O2-, and 1O2) as compared to isolated BiVO4 and BiOI. Also, the piezocatalytic rate of H2O2 production with the BiOI/BiVO4 heterojunction reaches 480 μmol g-1 h-1, which is 1.6- and 12-fold higher than those of BiVO4 and BiOI, respectively. Furthermore, the p-n heterojunction maintains a highly stable H2O2 production rate under ultrasonic irradiation for up to 5 h. The results from the experiments and equation-driven simulations of the strain and piezoelectric potential distributions indicate that the piezocatalytic reactivity of the p-n heterojunction resulted from the polarization intensity induced by periodic ultrasound, which is enhanced by the built-in electric field of the p-n heterojunctions. This study provides new insights into the design of piezocatalysts and opens up new prospects for applications in medicine, environmental remediation, and sonochemical sensors.