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Cui X, Wang X, Chang X, Bao L, Wu J, Tan Z, Chen J, Li J, Gao X, Ke P, Chen C. A new capacity of gut microbiota: Fermentation of engineered inorganic carbon nanomaterials into endogenous organic metabolites. Proc Natl Acad Sci U S A 2023; 120:e2218739120. [PMID: 37155879 PMCID: PMC10193999 DOI: 10.1073/pnas.2218739120] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2022] [Accepted: 04/16/2023] [Indexed: 05/10/2023] Open
Abstract
Carbon-based nanomaterials (CNMs) have recently been found in humans raising a great concern over their adverse roles in the hosts. However, our knowledge of the in vivo behavior and fate of CNMs, especially their biological processes elicited by the gut microbiota, remains poor. Here, we uncovered the integration of CNMs (single-walled carbon nanotubes and graphene oxide) into the endogenous carbon flow through degradation and fermentation, mediated by the gut microbiota of mice using isotope tracing and gene sequencing. As a newly available carbon source for the gut microbiota, microbial fermentation leads to the incorporation of inorganic carbon from the CNMs into organic butyrate through the pyruvate pathway. Furthermore, the butyrate-producing bacteria are identified to show a preference for the CNMs as their favorable source, and excessive butyrate derived from microbial CNMs fermentation further impacts on the function (proliferation and differentiation) of intestinal stem cells in mouse and intestinal organoid models. Collectively, our results unlock the unknown fermentation processes of CNMs in the gut of hosts and underscore an urgent need for assessing the transformation of CNMs and their health risk via the gut-centric physiological and anatomical pathways.
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Affiliation(s)
- Xuejing Cui
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
- The GBA National Institute for Nanotechnology Innovation, Guangzhou510700, Guangdong, China
| | - Xiaoyu Wang
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
- School of Nano Science and Technology, University of Chinese Academy of Sciences, Beijing101400, China
| | - Xueling Chang
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Beijing100049, China
| | - Lin Bao
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
- School of Nano Science and Technology, University of Chinese Academy of Sciences, Beijing101400, China
| | - Junguang Wu
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
- School of Nano Science and Technology, University of Chinese Academy of Sciences, Beijing101400, China
| | - Zhiqiang Tan
- State Key Laboratory of Environmental Chemistry and Ecotoxicology, Research Center for Eco-Environmental Sciences, Chinese Academy of Sciences, Beijing100085, China
| | | | - Jiayang Li
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
| | - Xingfa Gao
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
| | - Pu Chun Ke
- The GBA National Institute for Nanotechnology Innovation, Guangzhou510700, Guangdong, China
| | - Chunying Chen
- Chinese Academy of Sciences Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety and Center for Excellence in Nanoscience, National Center for Nanoscience and Technology of China, Beijing100190, China
- The GBA National Institute for Nanotechnology Innovation, Guangzhou510700, Guangdong, China
- School of Nano Science and Technology, University of Chinese Academy of Sciences, Beijing101400, China
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Shen Z, Zhao C, Qi Y, Mitrovic IZ, Yang L, Wen J, Huang Y, Li P, Zhao C. Memristive Non-Volatile Memory Based on Graphene Materials. MICROMACHINES 2020; 11:E341. [PMID: 32218324 PMCID: PMC7231216 DOI: 10.3390/mi11040341] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/30/2020] [Revised: 03/14/2020] [Accepted: 03/21/2020] [Indexed: 02/04/2023]
Abstract
Resistive random access memory (RRAM), which is considered as one of the most promising next-generation non-volatile memory (NVM) devices and a representative of memristor technologies, demonstrated great potential in acting as an artificial synapse in the industry of neuromorphic systems and artificial intelligence (AI), due its advantages such as fast operation speed, low power consumption, and high device density. Graphene and related materials (GRMs), especially graphene oxide (GO), acting as active materials for RRAM devices, are considered as a promising alternative to other materials including metal oxides and perovskite materials. Herein, an overview of GRM-based RRAM devices is provided, with discussion about the properties of GRMs, main operation mechanisms for resistive switching (RS) behavior, figure of merit (FoM) summary, and prospect extension of GRM-based RRAM devices. With excellent physical and chemical advantages like intrinsic Young's modulus (1.0 TPa), good tensile strength (130 GPa), excellent carrier mobility (2.0 × 105 cm2∙V-1∙s-1), and high thermal (5000 Wm-1∙K-1) and superior electrical conductivity (1.0 × 106 S∙m-1), GRMs can act as electrodes and resistive switching media in RRAM devices. In addition, the GRM-based interface between electrode and dielectric can have an effect on atomic diffusion limitation in dielectric and surface effect suppression. Immense amounts of concrete research indicate that GRMs might play a significant role in promoting the large-scale commercialization possibility of RRAM devices.
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Affiliation(s)
- Zongjie Shen
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Chun Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Yanfei Qi
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710061, China
| | - Ivona Z. Mitrovic
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Li Yang
- Department of Chemistry, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China;
- Department of Chemistry, University of Liverpool, Liverpool L69 3BX, UK
| | - Jiacheng Wen
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Yanbo Huang
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Puzhuo Li
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
| | - Cezhou Zhao
- Department of Electrical and Electronic Engineering, Xi’an Jiaotong–Liverpool University, Suzhou 215123, China; (Z.S.); (Y.Q.); (J.W.); (Y.H.); (P.L.)
- Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3BX, UK;
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Luo M, Xiang Z, Gu Z. Take precautions against potential threats that carbon nanotubes may bring to you. Sci China Chem 2019. [DOI: 10.1007/s11426-019-9631-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2022]
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