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Kravtsov M, Shilov AL, Yang Y, Pryadilin T, Kashchenko MA, Popova O, Titova M, Voropaev D, Wang Y, Shein K, Gayduchenko I, Goltsman GN, Lukianov M, Kudriashov A, Taniguchi T, Watanabe K, Svintsov DA, Adam S, Novoselov KS, Principi A, Bandurin DA. Viscous terahertz photoconductivity of hydrodynamic electrons in graphene. NATURE NANOTECHNOLOGY 2024:10.1038/s41565-024-01795-y. [PMID: 39375523 DOI: 10.1038/s41565-024-01795-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Accepted: 08/22/2024] [Indexed: 10/09/2024]
Abstract
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the bandgap enhances the number of charge carriers participating in transport. In superconductors and normal metals, the photoresistance is positive because of the destruction of the superconducting state and enhanced momentum-relaxing scattering, respectively. Here we report a qualitative deviation from the standard behaviour in doped metallic graphene. We show that Dirac electrons exposed to continuous-wave terahertz (THz) radiation can be thermally decoupled from the lattice, which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyse the dependencies of the negative photoresistance on the carrier density, and the radiation power, and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer, in principle, a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.
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Affiliation(s)
- M Kravtsov
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - A L Shilov
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
| | - Y Yang
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - T Pryadilin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
| | - M A Kashchenko
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
- Moscow Center for Advanced Studies, Moscow, Russia
| | - O Popova
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
| | - M Titova
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
- Moscow Center for Advanced Studies, Moscow, Russia
| | - D Voropaev
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
| | - Y Wang
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - K Shein
- Moscow Pedagogical State University, Moscow, Russia
- National Research University Higher School of Economics, Moscow, Russia
| | - I Gayduchenko
- Moscow Pedagogical State University, Moscow, Russia
- National Research University Higher School of Economics, Moscow, Russia
| | - G N Goltsman
- Moscow Pedagogical State University, Moscow, Russia
- National Research University Higher School of Economics, Moscow, Russia
| | - M Lukianov
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
| | - A Kudriashov
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
- Programmable Functional Materials Lab, Center for Neurophysics and Neuromorphic Technologies, Moscow, Russia
| | - T Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute of Material Science, Tsukuba, Japan
| | - K Watanabe
- Research Center for Functional Materials, National Institute of Material Science, Tsukuba, Japan
| | - D A Svintsov
- Moscow Center for Advanced Studies, Moscow, Russia
| | - S Adam
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore
- Department of Physics, Washington University in St. Louis, St. Louis, MO, USA
| | - K S Novoselov
- Institute for Functional Intelligent Materials, National University of Singapore, Singapore, Singapore
| | - A Principi
- School of Physics and Astronomy, University of Manchester, Manchester, UK
| | - D A Bandurin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
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Pasquale G, Sun Z, Migliato Marega G, Watanabe K, Taniguchi T, Kis A. Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures. NATURE NANOTECHNOLOGY 2024; 19:941-947. [PMID: 38956321 PMCID: PMC11286520 DOI: 10.1038/s41565-024-01717-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2023] [Accepted: 06/11/2024] [Indexed: 07/04/2024]
Abstract
The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K-1 T-1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena.
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Affiliation(s)
- Gabriele Pasquale
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Zhe Sun
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Guilherme Migliato Marega
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Andras Kis
- Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
- Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
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Hui A, Skinner B. Current Noise of Hydrodynamic Electrons. PHYSICAL REVIEW LETTERS 2023; 130:256301. [PMID: 37418728 DOI: 10.1103/physrevlett.130.256301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Accepted: 05/04/2023] [Indexed: 07/09/2023]
Abstract
A resistor at finite temperature produces white noise fluctuations of the current called Johnson-Nyquist noise. Measuring the amplitude of this noise provides a powerful primary thermometry technique to access the electron temperature. In practical situations, however, one needs to generalize the Johnson-Nyquist theorem to handle spatially inhomogeneous temperature profiles. Recent work provided such a generalization for Ohmic devices obeying the Wiedemann-Franz law, but there is a need to provide a similar generalization for hydrodynamic electron systems, since hydrodynamic electrons provide unusual sensitivity for Johnson noise thermometry but they do not admit a local conductivity nor obey the Wiedemann-Franz law. Here we address this need by considering low-frequency Johnson noise in the hydrodynamic setting for a rectangular geometry. Unlike in the Ohmic setting, we find that the Johnson noise is geometry dependent due to nonlocal viscous gradients. Nonetheless, ignoring the geometric correction only leads to an error of at most 40% as compared to naively using the Ohmic result.
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Affiliation(s)
- Aaron Hui
- Department of Physics, Ohio State University, Columbus, Ohio 43202, USA
| | - Brian Skinner
- Department of Physics, Ohio State University, Columbus, Ohio 43202, USA
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Sadeghi MM, Huang Y, Lian C, Giustino F, Tutuc E, MacDonald AH, Taniguchi T, Watanabe K, Shi L. Tunable electron-flexural phonon interaction in graphene heterostructures. Nature 2023; 617:282-286. [PMID: 37100903 DOI: 10.1038/s41586-023-05879-y] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/23/2021] [Accepted: 02/22/2023] [Indexed: 04/28/2023]
Abstract
Peculiar electron-phonon interaction characteristics underpin the ultrahigh mobility1, electron hydrodynamics2-4, superconductivity5 and superfluidity6,7 observed in graphene heterostructures. The Lorenz ratio between the electronic thermal conductivity and the product of the electrical conductivity and temperature provides insight into electron-phonon interactions that is inaccessible to past graphene measurements. Here we show an unusual Lorenz ratio peak in degenerate graphene near 60 kelvin and decreased peak magnitude with increased mobility. When combined with ab initio calculations of the many-body electron-phonon self-energy and analytical models, this experimental observation reveals that broken reflection symmetry in graphene heterostructures can relax a restrictive selection rule8,9 to allow quasielastic electron coupling with an odd number of flexural phonons, contributing to the increase of the Lorenz ratio towards the Sommerfeld limit at an intermediate temperature sandwiched between the low-temperature hydrodynamic regime and the inelastic electron-phonon scattering regime above 120 kelvin. In contrast to past practices of neglecting the contributions of flexural phonons to transport in two-dimensional materials, this work suggests that tunable electron-flexural phonon couping can provide a handle to control quantum matter at the atomic scale, such as in magic-angle twisted bilayer graphene10 where low-energy excitations may mediate Cooper pairing of flat-band electrons11,12.
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Affiliation(s)
- Mir Mohammad Sadeghi
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Yajie Huang
- Materials Science and Engineering Program, The University of Texas at Austin, Austin, TX, USA
| | - Chao Lian
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
- Oden Institute for Computational Engineering and Science, The University of Texas at Austin, Austin, TX, USA
| | - Feliciano Giustino
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
- Oden Institute for Computational Engineering and Science, The University of Texas at Austin, Austin, TX, USA
| | - Emanuel Tutuc
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, USA
| | - Allan H MacDonald
- Department of Physics, The University of Texas at Austin, Austin, TX, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Li Shi
- Department of Mechanical Engineering, The University of Texas at Austin, Austin, TX, USA.
- Materials Science and Engineering Program, The University of Texas at Austin, Austin, TX, USA.
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