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Lv Z, Zhu S, Wang Y, Ren Y, Luo M, Wang H, Zhang G, Zhai Y, Zhao S, Zhou Y, Jiang M, Leng YB, Han ST. Development of Bio-Voltage Operated Humidity-Sensory Neurons Comprising Self-Assembled Peptide Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405145. [PMID: 38877385 DOI: 10.1002/adma.202405145] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/10/2024] [Revised: 06/11/2024] [Indexed: 06/16/2024]
Abstract
Biomimetic humidity sensors offer a low-power approach for respiratory monitoring in early lung-disease diagnosis. However, balancing miniaturization and energy efficiency remains challenging. This study addresses this issue by introducing a bioinspired humidity-sensing neuron comprising a self-assembled peptide nanowire (NW) memristor with unique proton-coupled ion transport. The proposed neuron shows a low Ag+ activation energy owing to the NW and redox activity of the tyrosine (Tyr)-rich peptide in the system, facilitating ultralow electric-field-driven threshold switching and a high energy efficiency. Additionally, Ag+ migration in the system can be controlled by a proton source owing to the hydrophilic nature of the phenolic hydroxyl group in Tyr, enabling the humidity-based control of the conductance state of the memristor. Furthermore, a memristor-based neuromorphic perception neuron that can encode humidity signals into spikes is proposed. The spiking characteristics of this neuron can be modulated to emulate the strength-modulated spike-frequency characteristics of biological neurons. A three-layer spiking neural network with input neurons comprising these highly tunable humidity perception neurons shows an accuracy of 92.68% in lung-disease diagnosis. This study paves the way for developing bioinspired self-assembly strategies to construct neuromorphic perception systems, bridging the gap between artificial and biological sensing and processing paradigms.
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Affiliation(s)
- Ziyu Lv
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shirui Zhu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan Wang
- School of Microelectronics, Hefei University of Technology, Hefei, 230009, P. R. China
| | - Yanyun Ren
- 2020 X-Lab, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Mingtao Luo
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Hanning Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guohua Zhang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shilong Zhao
- School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Minghao Jiang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yan-Bing Leng
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Kowloon, Hong Kong, 999077, P. R. China
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2
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Song H, Chen S, Sun X, Cui Y, Yildirim T, Kang J, Yang S, Yang F, Lu Y, Zhang L. Enhancing 2D Photonics and Optoelectronics with Artificial Microstructures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2403176. [PMID: 39031754 PMCID: PMC11348073 DOI: 10.1002/advs.202403176] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/04/2024] [Indexed: 07/22/2024]
Abstract
By modulating subwavelength structures and integrating functional materials, 2D artificial microstructures (2D AMs), including heterostructures, superlattices, metasurfaces and microcavities, offer a powerful platform for significant manipulation of light fields and functions. These structures hold great promise in high-performance and highly integrated optoelectronic devices. However, a comprehensive summary of 2D AMs remains elusive for photonics and optoelectronics. This review focuses on the latest breakthroughs in 2D AM devices, categorized into electronic devices, photonic devices, and optoelectronic devices. The control of electronic and optical properties through tuning twisted angles is discussed. Some typical strategies that enhance light-matter interactions are introduced, covering the integration of 2D materials with external photonic structures and intrinsic polaritonic resonances. Additionally, the influences of external stimuli, such as vertical electric fields, enhanced optical fields and plasmonic confinements, on optoelectronic properties is analysed. The integrations of these devices are also thoroughly addressed. Challenges and future perspectives are summarized to stimulate research and development of 2D AMs for future photonics and optoelectronics.
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Affiliation(s)
- Haizeng Song
- Henan Key Laboratory of Rare Earth Functional MaterialsZhoukou Normal UniversityZhoukou466001China
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shuai Chen
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Xueqian Sun
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Yichun Cui
- National Key Laboratory of Science and Technology on Test Physics and Numerical MathematicsBeijing100190China
| | - Tanju Yildirim
- Faculty of Science and EngineeringSouthern Cross UniversityEast LismoreNSW2480Australia
| | - Jian Kang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Shunshun Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Fan Yang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Sciencethe Australian National UniversityCanberraACT2601Australia
| | - Linglong Zhang
- College of Physics, Nanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics (NUAA), MIITNanjing211106China
- Laboratory of Solid State MicrostructuresNanjing UniversityNanjing210093China
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Xia J, Gao C, Peng C, Liu Y, Chen PA, Wei H, Jiang L, Liao L, Chen H, Hu Y. Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition Systems. NANO LETTERS 2024; 24:6673-6682. [PMID: 38779991 DOI: 10.1021/acs.nanolett.4c01356] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV synapses using traditional wide-bandgap semiconductors, we developed a low-temperature (≤70 °C) solution process for fabricating DUV synapses based on PEA2PbBr4/C8-BTBT heterojunction field-effect transistors. This method enables the large-scale (4-in.), uniform, and transparent production of DUV synapses. These devices respond to both DUV and visible light, showing multidimensional features. Leveraging the unique ability of the multidimensional DUV synapse (MDUVS) to discriminate real human skin from artificial materials, we have achieved robust neuromorphic facial recognition with antispoofing capability, successfully identifying genuine human faces with an accuracy exceeding 92%.
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Affiliation(s)
- Jiangnan Xia
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
| | - Changsong Gao
- Institute of Optoelectronic Display National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Chengyuan Peng
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Yu Liu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Ping-An Chen
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Huan Wei
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
| | - Lang Jiang
- Beijing National Laboratory for Molecular Sciences, Institute of Chemistry Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Liao
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Huipeng Chen
- Institute of Optoelectronic Display National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Yuanyuan Hu
- International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province School of Physics and Electronics, Hunan University, Changsha 410082, China
- Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha 410082, China
- Shenzhen Research Institute of Hunan University, Shenzhen 518063, China
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Li F, Li D, Wang C, Liu G, Wang R, Ren H, Tang Y, Wang Y, Chen Y, Liang K, Huang Q, Sawan M, Qiu M, Wang H, Zhu B. An artificial visual neuron with multiplexed rate and time-to-first-spike coding. Nat Commun 2024; 15:3689. [PMID: 38693165 PMCID: PMC11063071 DOI: 10.1038/s41467-024-48103-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2023] [Accepted: 04/17/2024] [Indexed: 05/03/2024] Open
Abstract
Human visual neurons rely on event-driven, energy-efficient spikes for communication, while silicon image sensors do not. The energy-budget mismatch between biological systems and machine vision technology has inspired the development of artificial visual neurons for use in spiking neural network (SNN). However, the lack of multiplexed data coding schemes reduces the ability of artificial visual neurons in SNN to emulate the visual perception ability of biological systems. Here, we present an artificial visual spiking neuron that enables rate and temporal fusion (RTF) coding of external visual information. The artificial neuron can code visual information at different spiking frequencies (rate coding) and enables precise and energy-efficient time-to-first-spike (TTFS) coding. This multiplexed sensory coding scheme could improve the computing capability and efficacy of artificial visual neurons. A hardware-based SNN with the RTF coding scheme exhibits good consistency with real-world ground truth data and achieves highly accurate steering and speed predictions for self-driving vehicles in complex conditions. The multiplexed RTF coding scheme demonstrates the feasibility of developing highly efficient spike-based neuromorphic hardware.
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Affiliation(s)
- Fanfan Li
- School of Materials Science and Engineering, Zhejiang University, Hangzhou, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Dingwei Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Chuanqing Wang
- CenBRAIN Neurotech, School of Engineering, Westlake University, Hangzhou, China
| | - Guolei Liu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China
| | - Huihui Ren
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Yingjie Tang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Yan Wang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Yitong Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Kun Liang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
| | - Qi Huang
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China
| | - Mohamad Sawan
- CenBRAIN Neurotech, School of Engineering, Westlake University, Hangzhou, China
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China
| | - Min Qiu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China.
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, China.
- Westlake Institute for Optoelectronics, Westlake University, Hangzhou, China.
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou, China.
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5
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Qiu E, Zhang YH, Ventra MD, Schuller IK. Reconfigurable Cascaded Thermal Neuristors for Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306818. [PMID: 37770043 DOI: 10.1002/adma.202306818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/11/2023] [Revised: 09/25/2023] [Indexed: 10/03/2023]
Abstract
While the complementary metal-oxide semiconductor (CMOS) technology is the mainstream for the hardware implementation of neural networks, an alternative route is explored based on a new class of spiking oscillators called "thermal neuristors", which operate and interact solely via thermal processes. Utilizing the insulator-to-metal transition (IMT) in vanadium dioxide, a wide variety of reconfigurable electrical dynamics mirroring biological neurons is demonstrated. Notably, inhibitory functionality is achieved just in a single oxide device, and cascaded information flow is realized exclusively through thermal interactions. To elucidate the underlying mechanisms of the neuristors, a detailed theoretical model is developed, which accurately reflects the experimental results. This study establishes the foundation for scalable and energy-efficient thermal neural networks, fostering progress in brain-inspired computing.
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Affiliation(s)
- Erbin Qiu
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, CA, 92093, USA
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | - Yuan-Hang Zhang
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
| | | | - Ivan K Schuller
- Department of Physics, University of California San Diego, La Jolla, CA, 92093, USA
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6
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Cao F, Hu Z, Yan T, Hong E, Deng X, Wu L, Fang X. A Dual-Functional Perovskite-Based Photodetector and Memristor for Visual Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2304550. [PMID: 37467009 DOI: 10.1002/adma.202304550] [Citation(s) in RCA: 9] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2023] [Revised: 07/16/2023] [Accepted: 07/17/2023] [Indexed: 07/20/2023]
Abstract
The imitation of human visual memory demands the multifunctional integration of light sensors similar to the eyes, and image memory, similar to the brain. Although humans have already implemented electronic devices with visual memory functions, these devices require a combination of various components and logical circuits. However, the combination of visual perception and high-performance information storage capabilities into a single device to achieve visual memory remains challenging. In this study, inspired by the function of human visual memory, a dual-functional perovskite-based photodetector (PD) and memristor are designed to realize visual perception and memory capacities. As a PD, it realizes an ultrahigh self-powered responsivity of 276 mA W-1 , a high detectivity of 4.7 × 1011 Jones (530 nm; light intensities, 2.34 mW cm-2 ), and a high rectification ratio of ≈100 (±2 V). As a memristor, an ultrahigh on/off ratio (≈105 ), an ultralow power consumption of 3 × 10-11 W, a low setting voltage (0.15 V), and a long retention time (>7000 s) are realized. Moreover, the dual-functional device has the capacity to perceive and remember light paths and store data with good cyclic stability. This device exhibits perceptual and cyclic erasable memory functions, which provides new opportunities for mimicking human visual memory in future multifunctional applications.
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Affiliation(s)
- Fa Cao
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Zijun Hu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Tingting Yan
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Enliu Hong
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Xiaolei Deng
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
| | - Limin Wu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
- College of Chemistry and Chemical Engineering Inner Mongolia University Hohhot, Hohhot, 010021, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200433, P. R. China
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Mougkogiannis P, Adamatzky A. Proteinoid Microspheres as Protoneural Networks. ACS OMEGA 2023; 8:35417-35426. [PMID: 37780014 PMCID: PMC10536103 DOI: 10.1021/acsomega.3c05670] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Accepted: 08/28/2023] [Indexed: 10/03/2023]
Abstract
Proteinoids, also known as thermal proteins, possess a fascinating ability to generate microspheres that exhibit electrical spikes resembling the action potentials of neurons. These spiking microspheres, referred to as protoneurons, hold the potential to assemble into proto-nanobrains. In our study, we investigate the feasibility of utilizing a promising electrochemical technique called differential pulse voltammetry (DPV) to interface with proteinoid nanobrains. We evaluate DPV's suitability by examining critical parameters such as selectivity, sensitivity, and linearity of the electrochemical responses. The research systematically explores the influence of various operational factors, including pulse width, pulse amplitude, scan rate, and scan time. Encouragingly, our findings indicate that DPV exhibits significant potential as an efficient electrochemical interface for proteinoid nanobrains. This technology opens up new avenues for developing artificial neural networks with broad applications across diverse fields of research.
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Affiliation(s)
| | - Andrew Adamatzky
- Unconventional Computing
Laboratory, UWE, Bristol BS16 1QY, U.K.
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