1
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Kim BQ, Kim JQ, Yoon H, Lee E, Choi SQ, Kim K. Active Stratification of Colloidal Mixtures for Asymmetric Multilayers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404348. [PMID: 39150055 DOI: 10.1002/smll.202404348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Revised: 08/05/2024] [Indexed: 08/17/2024]
Abstract
Stratified films offer high performance and multifunctionality, yet achieving fully stratified films remains a challenge. The layer-by-layer method, involving the sequential deposition of each layer, has been commonly utilized for stratified film fabrication. However, this approach is time-consuming, labor-intensive, and prone to leaving defects within the film. Alternatively, the self-stratification process exploiting a drying binary colloidal mixture is intensively developed recently, but it relies on strict operating conditions, typically yielding a heterogeneous interlayer. In this study, an active interfacial stratification process for creating completely stratified nanoparticle (NP) films is introduced. The technique leverages NPs with varying interfacial activity at the air-water interface. With the help of depletion pressure, the lateral compression of NP mixtures at the interface induces individual desorption of less interfacial active NPs into the subphase, while more interfacial active NPs remain at the interface. This simple compression leads to nearly perfect stratified NP films with controllability, universality, and scalability. Combined with a solvent annealing process, the active stratification process enables the fabrication of stratified films comprising a polymeric layer atop a NP layer. This work provides insightful implications for designing drug encapsulation and controlled release, as well as manufacturing transparent and flexible electrodes.
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Affiliation(s)
- Baekmin Q Kim
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jongmin Q Kim
- Interface Materials and Chemical Engineering Research Center, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Hojoon Yoon
- Department of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology (SeoulTech), Seoul, 01811, Republic of Korea
| | - EunSuk Lee
- Department of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology (SeoulTech), Seoul, 01811, Republic of Korea
| | - Siyoung Q Choi
- Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
- KAIST Institute for the Nanocentury, KAIST, Daejeon, 34141, Republic of Korea
| | - KyuHan Kim
- Department of Chemical and Biomolecular Engineering, Seoul National University of Science and Technology (SeoulTech), Seoul, 01811, Republic of Korea
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2
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Li Z, Liu J, Rasmita A, Zhang Z, Gao W, Chia EEM. Room-Temperature Geometrical Circular Photocurrent in Few-Layer MoS 2. NANO LETTERS 2024; 24:5952-5957. [PMID: 38726903 DOI: 10.1021/acs.nanolett.4c00057] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2024]
Abstract
Valleytronics, i.e., the manipulation of the valley degree of freedom, offers a promising path for energy-efficient electronics. One of the key milestones in this field is the room-temperature manipulation of the valley information in thick-layered material. Using scanning photocurrent microscopy, we achieve this milestone by observing a geometrically dependent circular photocurrent in a few-layer molybdenum disulfide (MoS2) under normal incidence. Such an observation shows that the system symmetry is lower than that of bulk MoS2 material, preserving the optical chirality-valley correspondence. Moreover, the circular photocurrent polarity can be reversed by applying electrical bias. We propose a model where the observed photocurrent results from the symmetry breaking and the built-in field at the electrode-sample interface. Our results show that the valley information is still retained even in thick-layered MoS2 at room temperature and opens up new opportunities for exploiting the valley index through interface engineering in multilayer valleytronics devices.
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Affiliation(s)
- Ziqi Li
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Jiayun Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- Department of Physics, School of Sciences, Great Bay University, Dongguan 523000, China
- Great Bay Institute for Advanced Study, Dongguan 523000, China
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, Singapore 117543, Singapore
| | - Elbert E M Chia
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
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3
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Dai Y, He Q, Huang Y, Duan X, Lin Z. Solution-Processable and Printable Two-Dimensional Transition Metal Dichalcogenide Inks. Chem Rev 2024; 124:5795-5845. [PMID: 38639932 DOI: 10.1021/acs.chemrev.3c00791] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) with layered crystal structures have been attracting enormous research interest for their atomic thickness, mechanical flexibility, and excellent electronic/optoelectronic properties for applications in diverse technological areas. Solution-processable 2D TMD inks are promising for large-scale production of functional thin films at an affordable cost, using high-throughput solution-based processing techniques such as printing and roll-to-roll fabrications. This paper provides a comprehensive review of the chemical synthesis of solution-processable and printable 2D TMD ink materials and the subsequent assembly into thin films for diverse applications. We start with the chemical principles and protocols of various synthesis methods for 2D TMD nanosheet crystals in the solution phase. The solution-based techniques for depositing ink materials into solid-state thin films are discussed. Then, we review the applications of these solution-processable thin films in diverse technological areas including electronics, optoelectronics, and others. To conclude, a summary of the key scientific/technical challenges and future research opportunities of solution-processable TMD inks is provided.
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Affiliation(s)
- Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 99907, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, California 90095, United States
- California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing 100084, China
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4
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Rezaei SE, Schindler P. Revealing large room-temperature Nernst coefficients in 2D materials by first-principles modeling. NANOSCALE 2024; 16:6142-6150. [PMID: 38444375 DOI: 10.1039/d3nr06127b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/07/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention owing to their distinctive electronic, thermal, and mechanical characteristics. Recent advancements in both theoretical understanding and experimental methods have greatly contributed to the understanding of thermoelectric properties in 2D materials. However, thermomagnetic properties of 2D materials have not yet received the same amount of attention. In this work, we select promising 2D materials guided by the physics of the Nernst effect and present a thorough first-principles study of their electronic structures, carrier mobilities, and Nernst coefficients as a function of carrier concentration. Specifically, we reveal that trilayer graphene with an ABA stacking exhibits an exceptionally large Nernst coefficient of 112 μV (KT)-1 at room temperature. We further demonstrate that monolayer graphene, ABC-stacked trilayer graphene, and trilayer phosphorene (AAA stacking) have large Nernst coefficients at room temperature. This study establishes an ab initio framework for the quantitative study of the thermomagnetic effects in 2D materials and demonstrates high fidelity with previous experimental data.
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Affiliation(s)
- S Emad Rezaei
- Northeastern University, Department of Mechanical and Industrial Engineering, Boston, MA 02115, USA.
| | - Peter Schindler
- Northeastern University, Department of Mechanical and Industrial Engineering, Boston, MA 02115, USA.
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5
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Ma L, Wang Y, Liu Y. van der Waals Contact for Two-Dimensional Transition Metal Dichalcogenides. Chem Rev 2024; 124:2583-2616. [PMID: 38427801 DOI: 10.1021/acs.chemrev.3c00697] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2024]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for next-generation electronics owing to their atomically thin structures and surfaces devoid of dangling bonds. However, establishing high-quality metal contacts with TMDs presents a critical challenge, primarily attributed to their ultrathin bodies and delicate lattices. These distinctive characteristics render them susceptible to physical damage and chemical reactions when conventional metallization approaches involving "high-energy" processes are implemented. To tackle this challenge, the concept of van der Waals (vdW) contacts has recently been proposed as a "low-energy" alternative. Within the vdW geometry, metal contacts can be physically laminated or gently deposited onto the 2D channel of TMDs, ensuring the formation of atomically clean and electronically sharp contact interfaces while preserving the inherent properties of the 2D TMDs. Consequently, a considerable number of vdW contact devices have been extensively investigated, revealing unprecedented transport physics or exceptional device performance that was previously unachievable. This review presents recent advancements in vdW contacts for TMD transistors, discussing the merits, limitations, and prospects associated with each device geometry. By doing so, our purpose is to offer a comprehensive understanding of the current research landscape and provide insights into future directions within this rapidly evolving field.
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Affiliation(s)
- Likuan Ma
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yiliu Wang
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Yuan Liu
- Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha 410082, China
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6
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Handa T, Holbrook M, Olsen N, Holtzman LN, Huber L, Wang HI, Bonn M, Barmak K, Hone JC, Pasupathy AN, Zhu X. Spontaneous exciton dissociation in transition metal dichalcogenide monolayers. SCIENCE ADVANCES 2024; 10:eadj4060. [PMID: 38295176 PMCID: PMC10830119 DOI: 10.1126/sciadv.adj4060] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/25/2023] [Accepted: 12/28/2023] [Indexed: 02/02/2024]
Abstract
Since the seminal work on MoS2, photoexcitation in atomically thin transition metal dichalcogenides (TMDCs) has been assumed to result in excitons, with binding energies order of magnitude larger than thermal energy at room temperature. Here, we reexamine this foundational assumption and show that photoexcitation of TMDC monolayers can result in a substantial population of free charges. Performing ultrafast terahertz spectroscopy on large-area, single-crystal TMDC monolayers, we find that up to ~10% of excitons spontaneously dissociate into charge carriers with lifetimes exceeding 0.2 ns. Scanning tunneling microscopy reveals that photocarrier generation is intimately related to mid-gap defects, likely via trap-mediated Auger scattering. Only in state-of-the-art quality monolayers, with mid-gap trap densities as low as 109 cm-2, does intrinsic exciton physics start to dominate the terahertz response. Our findings reveal the necessity of knowing the defect density in understanding photophysics of TMDCs.
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Affiliation(s)
- Taketo Handa
- Department of Chemistry, Columbia University, New York, NY 10027, USA
| | - Madisen Holbrook
- Department of Physics, Columbia University, New York, NY 10027, USA
| | - Nicholas Olsen
- Department of Chemistry, Columbia University, New York, NY 10027, USA
| | - Luke N. Holtzman
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - Lucas Huber
- Department of Chemistry, Columbia University, New York, NY 10027, USA
| | - Hai I. Wang
- Max Planck Institute for Polymer Research, Mainz 55128, Germany
| | - Mischa Bonn
- Max Planck Institute for Polymer Research, Mainz 55128, Germany
| | - Katayun Barmak
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA
| | - James C. Hone
- Department of Mechanical Engineering, Columbia University, New York, NY 10027, USA
| | | | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, NY 10027, USA
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7
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Lei Y, Xie X, Ma H, Ma J. Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe 2/hBN/WSe 2 Heterostructures. J Phys Chem Lett 2023:11190-11199. [PMID: 38055859 DOI: 10.1021/acs.jpclett.3c03040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Introducing the two-dimensional (2D) hexagonal boron nitride (hBN) between 2D transition metal dichalcogenide (TMD) layers promises convenient manipulation of the interlayer exciton (IX) and interlayer charge transfer in TMD/hBN/TMD heterostructures, while the role of inserted hBN layers during IX formation is controversial. Employing ab initio nonadiabatic molecular dynamics (NAMD) simulations and the electron-phonon coupling model, we systematically investigate interlayer hole transfer in MoSe2/WSe2 bilayers intercalated by hBN layers with various thicknesses. The conventional direct hole transfer from MoSe2 to WSe2 is decelerated by 2-3 orders of magnitude after the hBN insertion. Meanwhile, a novel channel intermediated by a deeper hole of WSe2 becomes dominant, where the intralayer shear mode of hBN plays a crucial role by reducing the energy barriers for this new channel. The unique role of hBN layers is revealed for the first time, enriching the knowledge of the underlying microscopic mechanisms and providing instructive guidance to practical van der Waals optoelectronic devices.
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Affiliation(s)
- Yuli Lei
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoyu Xie
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Haibo Ma
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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8
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Yang G, Fan J, Gao SP. Momentum and thickness dependent excitonic and plasmonic properties of 2D h-BN and MoS 2 restored from supercell calculations. NANOSCALE ADVANCES 2023; 5:6990-6998. [PMID: 38059031 PMCID: PMC10697014 DOI: 10.1039/d3na00670k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Accepted: 10/25/2023] [Indexed: 12/08/2023]
Abstract
The comprehension and manipulation of the propagation characteristics of elementary excitations, such as excitons and plasmons, play a crucial role in tailoring the optical properties of low-dimensional materials. To this end, investigations into the momentum (q) dispersions of excitons and plasmons in confined geometry are required fundamentally. Due to advancements in momentum-resolved spectroscopy techniques, research on the q-dependent excitons or plasmons in low-dimensional materials is beginning to emerge. However, previous simulations of low-dimensional systems are adversely affected by the artificial vacuum spacing employed in the supercell approximation. Furthermore, the significance of layer thickness in determining the excitonic and plasmonic characteristics of two-dimensional (2D) materials remains largely unexplored in the context of finite q. Therefore, an extensive investigation into the momentum and thickness dependent behaviours of both excitons and plasmons in 2D materials, which are free of the influence of vacuum spacing, is lacking at present. In this article, we develop a restoration procedure to eliminate the influence of vacuum spacing, and obtain a comprehensive picture of momentum and layer thickness dependent excitonic and plasmonic properties of 2D hexagonal boron nitride (h-BN) and molybdenum disulphide (MoS2). Our restored simulations are not only found to be in excellent agreement with available experiments, but also elucidate the roles of momentum and layer thickness in the excitonic and plasmonic properties of 2D h-BN and MoS2. We further unveil the dimensionality effect on the dispersion characteristics of excitons and plasmons in h-BN and MoS2. Our contribution will hopefully promote the understanding of the elementary excitations propagating in low-dimensional materials and pave the way for next-generation nanophotonic and optoelectronic devices.
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Affiliation(s)
- Guang Yang
- Department of Materials Science, Fudan University Shanghai 200433 P. R. China
| | - Jiachen Fan
- Department of Materials Science, Fudan University Shanghai 200433 P. R. China
| | - Shang-Peng Gao
- Department of Materials Science, Fudan University Shanghai 200433 P. R. China
- Yiwu Research Institute of Fudan University Yiwu Zhejiang 322000 P. R. China
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9
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Wu G, Zhang X, Feng G, Wang J, Zhou K, Zeng J, Dong D, Zhu F, Yang C, Zhao X, Gong D, Zhang M, Tian B, Duan C, Liu Q, Wang J, Chu J, Liu M. Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing. NATURE MATERIALS 2023; 22:1499-1506. [PMID: 37770677 DOI: 10.1038/s41563-023-01676-0] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Accepted: 09/03/2023] [Indexed: 09/30/2023]
Abstract
Recently, the increasing demand for data-centric applications is driving the elimination of image sensing, memory and computing unit interface, thus promising for latency- and energy-strict applications. Although dedicated electronic hardware has inspired the development of in-memory computing and in-sensor computing, folding the entire signal chain into one device remains challenging. Here an in-memory sensing and computing architecture is demonstrated using ferroelectric-defined reconfigurable two-dimensional photodiode arrays. High-level cognitive computing is realized based on the multiplications of light power and photoresponsivity through the photocurrent generation process and Kirchhoff's law. The weight is stored and programmed locally by the ferroelectric domains, enabling 51 (>5 bit) distinguishable weight states with linear, symmetric and reversible manipulation characteristics. Image recognition can be performed without any external memory and computing units. The three-in-one paradigm, integrating high-level computing, weight memorization and high-performance sensing, paves the way for a computing architecture with low energy consumption, low latency and reduced hardware overhead.
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Affiliation(s)
- Guangjian Wu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Xumeng Zhang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
| | - Guangdi Feng
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China
| | - Jingli Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Keji Zhou
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Jinhua Zeng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
| | - Danian Dong
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
| | - Fangduo Zhu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Chenkai Yang
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China
| | - Xiaoming Zhao
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China
| | - Danni Gong
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China
| | - Mengru Zhang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China.
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China
| | - Qi Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
- Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
| | - Jianlu Wang
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China.
- Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China.
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China.
- Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, China.
| | - Junhao Chu
- Key Laboratory of Polar Materials and Devices (MOE), Ministry of Education, Shanghai Center of Brain-inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China
- Institute of Optoelectronics, Shanghai Frontier Base of Intelligent Optoelectronics and Perception, Fudan University, Shanghai, China
| | - Ming Liu
- State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China
- Shanghai Qi Zhi Institute, Xuhui District, Shanghai, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China
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10
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Dutta R, Bala A, Sen A, Spinazze MR, Park H, Choi W, Yoon Y, Kim S. Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi-Functional Optoelectronic Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303272. [PMID: 37453927 DOI: 10.1002/adma.202303272] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Revised: 06/21/2023] [Accepted: 07/03/2023] [Indexed: 07/18/2023]
Abstract
The unique electrical and optical properties of transition metal dichalcogenides (TMDs) make them attractive nanomaterials for optoelectronic applications, especially optical sensors. However, the optical characteristics of these materials are dependent on the number of layers. Monolayer TMDs have a direct bandgap that provides higher photoresponsivity compared to multilayer TMDs with an indirect bandgap. Nevertheless, multilayer TMDs are more appropriate for various photodetection applications due to their high carrier density, broad spectral response from UV to near-infrared, and ease of large-scale synthesis. Therefore, this review focuses on the modification of the optical properties of devices based on indirect bandgap TMDs and their emerging applications. Several successful developments in optical devices are examined, including band structure engineering, device structure optimization, and heterostructures. Furthermore, it introduces cutting-edge techniques and future directions for optoelectronic devices based on multilayer TMDs.
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Affiliation(s)
- Riya Dutta
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Arindam Bala
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Anamika Sen
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Michael Ross Spinazze
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Heekyeong Park
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Woong Choi
- School of Materials Science & Engineering, Kookmin University, Seoul, 02707, Republic of Korea
| | - Youngki Yoon
- Waterloo Institute for Nanotechnology and the Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
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11
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Tenney SM, Tan LA, Tan X, Sonnleitner ML, Coffey B, Williams JA, Ronquillo R, Atallah TL, Ahmed T, Caram JR. Efficient 2D to 0D Energy Transfer in HgTe Nanoplatelet-Quantum Dot Heterostructures through High-Speed Exciton Diffusion. J Phys Chem Lett 2023; 14:9456-9463. [PMID: 37830914 DOI: 10.1021/acs.jpclett.3c02168] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Large area absorbers with localized defect emission are of interest for energy concentration via the antenna effect. Transfer between 2D and 0D quantum-confined structures is advantageous as it affords maximal lateral area antennas with continuously tunable emission. We report the quantum efficiency of energy transfer in in situ grown HgTe nanoplatelet (NPL)/quantum dot (QD) heterostructures to be near unity (>85%), while energy transfer in separately synthesized and well separated solutions of HgTe NPLs to QDs only reaches 47 ± 11% at considerably higher QD concentrations. Using Kinetic Monte Carlo simulations, we estimate an exciton diffusion constant of 1-10 cm2/s in HgTe NPLs, the same magnitude as that of 2D semiconductors. We also simulate in-solution energy transfer between NPLs and QDs, recovering an R-4 dependence consistent with 2D-0D near-field energy transfer even in randomly distributed NPL/QD mixtures. This highlights the advantage of NPLs 2D morphology and the efficiency of NPL/QD heterostructures and mixtures for energy harvesting.
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Affiliation(s)
- Stephanie M Tenney
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Lauren A Tan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Xuanheng Tan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Mikayla L Sonnleitner
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Belle Coffey
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Jillian A Williams
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Ricky Ronquillo
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Timothy L Atallah
- Department of Chemistry and Biochemistry, Denison University, 500 West Loop, Granville, Ohio 43023, United States
| | - Tasnim Ahmed
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
| | - Justin R Caram
- Department of Chemistry and Biochemistry, University of California, Los Angeles, 607 Charles E. Young Drive, Los Angeles, California 90095-1569, United States
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12
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Zhu Y, Prezhdo OV, Long R, Fang WH. Twist Angle-Dependent Intervalley Charge Carrier Transfer and Recombination in Bilayer WS 2. J Am Chem Soc 2023; 145:22826-22835. [PMID: 37796526 DOI: 10.1021/jacs.3c09170] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/06/2023]
Abstract
A twist angle at a van der Waals junction provides a handle to tune its optoelectronic properties for a variety of applications, and a comprehensive understanding of how the twist modulates electronic structure, interlayer coupling, and carrier dynamics is needed. We employ time-dependent density functional theory and nonadiabatic molecular dynamics to elucidate angle-dependent intervalley carrier transfer and recombination in bilayer WS2. Repulsion between S atoms in twisted configurations weakens interlayer coupling, increases the interlayer distance, and softens layer breathing modes. Twisting has a minor influence on K valleys while it lowers Γ valleys and raises Q valleys because their wave functions are delocalized between layers. Consequently, the reduced energy gaps between the K and Γ valleys accelerate the hole transfer in the twisted structures. Intervalley electron transfer proceeds nearly an order of magnitude faster than hole transfer. The more localized wave functions at K than Q values and larger bandgaps result in smaller nonadiabatic couplings for intervalley recombination, making it 3-4 times slower in twisted than high-symmetry structures. B2g breathing, E2g in-plane, and A1g out-of-plane modes are most active during intervalley carrier transfer and recombination. The faster intervalley transfer and extended carrier lifetimes in twisted junctions are favorable for optoelectronic device performance.
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Affiliation(s)
- Yonghao Zhu
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P.R. China
| | - Oleg V Prezhdo
- Department of Chemistry, University of Southern California, Los Angeles, California 90089, United States
| | - Run Long
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P.R. China
| | - Wei-Hai Fang
- College of Chemistry, Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, Beijing Normal University, Beijing 100875, P.R. China
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13
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Yan JY, Chen C, Zhang XD, Wang YT, Babin HG, Wieck AD, Ludwig A, Meng Y, Hu X, Duan H, Chen W, Fang W, Cygorek M, Lin X, Wang DW, Jin CY, Liu F. Coherent control of a high-orbital hole in a semiconductor quantum dot. NATURE NANOTECHNOLOGY 2023; 18:1139-1146. [PMID: 37488220 DOI: 10.1038/s41565-023-01442-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/19/2022] [Accepted: 06/06/2023] [Indexed: 07/26/2023]
Abstract
Coherently driven semiconductor quantum dots are one of the most promising platforms for non-classical light sources and quantum logic gates which form the foundation of photonic quantum technologies. However, to date, coherent manipulation of single charge carriers in quantum dots is limited mainly to their lowest orbital states. Ultrafast coherent control of high-orbital states is obstructed by the demand for tunable terahertz pulses. To break this constraint, we demonstrate an all-optical method to control high-orbital states of a hole via a stimulated Auger process. The coherent nature of the Auger process is proved by Rabi oscillation and Ramsey interference. Harnessing this coherence further enables the investigation of the single-hole relaxation mechanism. A hole relaxation time of 161 ps is observed and attributed to the phonon bottleneck effect. Our work opens new possibilities for understanding the fundamental properties of high-orbital states in quantum emitters and for developing new types of orbital-based quantum photonic devices.
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Affiliation(s)
- Jun-Yong Yan
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
| | - Chen Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
| | - Xiao-Dong Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
| | - Yu-Tong Wang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
| | - Hans-Georg Babin
- Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum, Germany
| | - Andreas D Wieck
- Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum, Germany
| | - Arne Ludwig
- Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Bochum, Germany
| | - Yun Meng
- School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin, China
- Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin, China
| | - Xiaolong Hu
- School of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin, China
- Key Laboratory of Optoelectronic Information Science and Technology, Ministry of Education, Tianjin, China
| | - Huali Duan
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
- ZJU-UIUC Institute, International Campus, Zhejiang University, Haining, China
| | - Wenchao Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
- ZJU-UIUC Institute, International Campus, Zhejiang University, Haining, China
| | - Wei Fang
- College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
| | - Moritz Cygorek
- SUPA, Institute of Photonics and Quantum Sciences, Heriot-Watt University, Edinburgh, UK
| | - Xing Lin
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
| | - Da-Wei Wang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, School of Physics, Zhejiang University, Hangzhou, China
| | - Chao-Yuan Jin
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
- International Joint Innovation Center, Zhejiang University, Haining, China
- Center for Information Technology Application Innovation, Shaoxing Institute, Zhejiang University, Shaoxing, China
| | - Feng Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Extreme Photonics and Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China.
- International Joint Innovation Center, Zhejiang University, Haining, China.
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14
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Kwon G, Kim HS, Jeong K, Kim M, Nam GH, Park H, Yoo K, Cho MH. Forming Stable van der Waals Contacts between Metals and 2D Semiconductors. SMALL METHODS 2023; 7:e2300376. [PMID: 37291738 DOI: 10.1002/smtd.202300376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2023] [Revised: 05/19/2023] [Indexed: 06/10/2023]
Abstract
High-performing 2D electrical and optical devices can be realized by forming an ideal van der Waals (vdW) metal contact with weak interactions and stable interface states. However, the methods for applying metal contacts while avoiding damage from metal deposition present challenges in realizing a uniform, stable vdW interface. To overcome this problem, this study develops a method for forming vdW contacts using a sacrificial Se buffer layer. This study explores this method by investigating the difference in the Schottky barrier height between the vdW metal contact deposited using a buffer layer, a transferred metal contact, and a conventional directly deposited metal contact using rectification and photovoltaic characteristics of a Schottky diode structure with graphite. Evidently, the Se buffer layer method forms the most stable and ideal vdW contact while preventing Fermi-level pinning. A tungsten diselenide Schottky diode fabricated using these vdW contacts with Au and graphite as the top and bottom electrodes, respectively, exhibits excellent operation with an ideality factor of ≈1, an on/off ratio of > 107 , and coherent properties. Additionally, when using only the vdW Au contact, the electrical and optical properties of the device can be minutely modulated by changing the structure of the Schottky diode.
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Affiliation(s)
- Gihyeon Kwon
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Hyeon-Sik Kim
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Kwangsik Jeong
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Myeongjin Kim
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Gi Hwan Nam
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Hyunjun Park
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Kyunghwa Yoo
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Mann-Ho Cho
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
- Department of System Semiconductor Engineering, Yonsei University, Seoul, 03722, Republic of Korea
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15
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Wang S, Xue J, Xu D, He J, Dai Y, Xia T, Huang Y, He Q, Duan X, Lin Z. Electrochemical molecular intercalation and exfoliation of solution-processable two-dimensional crystals. Nat Protoc 2023; 18:2814-2837. [PMID: 37525001 DOI: 10.1038/s41596-023-00865-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2023] [Accepted: 06/01/2023] [Indexed: 08/02/2023]
Abstract
Electrochemical molecular intercalation of layered semiconducting crystals with organic cations followed by ultrasonic exfoliation has proven to be an effective approach to producing a rich family of organic/inorganic hybrid superlattices and high-quality, solution-processable 2D semiconductors. A traditional method for exfoliating 2D crystals relies on the intercalation of inorganic alkali metal cations. The organic cations (e.g., alkyl chain-substituted quaternary ammonium cations) are much larger than their inorganic counterparts, and the bulky molecular structure endows distinct intercalation and exfoliation chemistry, as well as molecular tunability. By using this protocol, many layered 2D crystals (including graphene, black phosphorus and versatile metal chalcogenides) can be electrochemically intercalated with organic quaternary alkylammonium cations. Subsequent solution-phase exfoliation of the intercalated compounds is realized by regular bath sonication for a short period (5-30 min) to produce free-standing, thin 2D nanosheets. It is also possible to graft additional ligands on the nanosheet surface. The thickness of the exfoliated nanosheets can be measured by using atomic force microscopy and Raman spectroscopy. Modifying the chemical structure and geometrical configuration of alkylammonium cations results in different exfoliation behavior and a family of versatile organic/inorganic hybrid superlattices with tunable physical/chemical properties. The whole protocol takes ~6 h for the successful production of stable, ultrathin 2D nanosheet dispersion in solution and another 11 h for depositing thin films and transferring them onto an arbitrary surface. This protocol does not require expertise beyond basic electrochemistry knowledge and conventional colloidal nanocrystal synthesis and processing.
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Affiliation(s)
- Shengqi Wang
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Junying Xue
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Dong Xu
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA, USA
| | - Jing He
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Yongping Dai
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Tingyi Xia
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China
| | - Yu Huang
- Department of Materials Science and Engineering, University of California Los Angeles, Los Angeles, CA, USA
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong, China.
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California Los Angeles, Los Angeles, CA, USA.
- California NanoSystems Institute, University of California Los Angeles, Los Angeles, CA, USA.
| | - Zhaoyang Lin
- Department of Chemistry, Engineering Research Center of Advanced Rare Earth Materials (Ministry of Education), Tsinghua University, Beijing, China.
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16
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Wang Z, Sebek M, Liang X, Elbanna A, Nemati A, Zhang N, Goh CHK, Jiang M, Pan J, Shen Z, Su X, Thanh NTK, Sun H, Teng J. Greatly Enhanced Resonant Exciton-Trion Conversion in Electrically Modulated Atomically Thin WS 2 at Room Temperature. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302248. [PMID: 37165546 DOI: 10.1002/adma.202302248] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2023] [Revised: 04/27/2023] [Indexed: 05/12/2023]
Abstract
Excitonic resonance in atomically thin semiconductors offers a favorite platform to study 2D nanophotonics in both classical and quantum regimes and promises potentials for highly tunable and ultra-compact optical devices. The understanding of charge density dependent exciton-trion conversion is the key for revealing the underlaying physics of optical tunability. Nevertheless, the insufficient and inefficient light-matter interactions hinder the observation of trionic phenomenon and the development of excitonic devices for dynamic power-efficient electro-optical applications. Here, by engaging an optical cavity with atomically thin transition metal dichalcogenides (TMDCs), greatly enhanced exciton-trion conversion is demonstrated at room temperature (RT) and achieve electrical modulation of reflectivity of ≈40% at exciton and 7% at trion state, which correspondingly enables a broadband large phase tuning in monolayer tungsten disulfide. Besides the absorptive conversion, ≈100% photoluminescence conversion from excitons to trions is observed at RT, illustrating a clear physical mechanism of an efficient exciton-trion conversion for extraordinary optical performance. The results indicate that both excitons and trions can play significant roles in electrical modulation of the optical parameters of TMDCs at RT. The work shows the real possibility for realizing electrical tunable and multi-functional ultra-thin optical devices using 2D materials.
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Affiliation(s)
- Zeng Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Matej Sebek
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
- Biophysics Group, Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK
- UCL Healthcare Biomagnetics and Nanomaterials Laboratories, London, W1S 4BS, UK
| | - Xinan Liang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Ahmed Elbanna
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
- Centre for Disruptive Photonic Technologies, The Photonic Institute, SPMS, Nanyang Technological University, Singapore, 637371, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Arash Nemati
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Nan Zhang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Choon Hwa Ken Goh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Mengting Jiang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Zexiang Shen
- Centre for Disruptive Photonic Technologies, The Photonic Institute, SPMS, Nanyang Technological University, Singapore, 637371, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xiaodi Su
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
| | - Nguyen Thi Kim Thanh
- Biophysics Group, Department of Physics and Astronomy, University College London, London, WC1E 6BT, UK
- UCL Healthcare Biomagnetics and Nanomaterials Laboratories, London, W1S 4BS, UK
| | - Handong Sun
- Centre for Disruptive Photonic Technologies, The Photonic Institute, SPMS, Nanyang Technological University, Singapore, 637371, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), Singapore, 138634, Singapore
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17
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Li D, Pan A. Perovskite sensitized 2D photodiodes. LIGHT, SCIENCE & APPLICATIONS 2023; 12:139. [PMID: 37277325 DOI: 10.1038/s41377-023-01187-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A new type of perovskite sensitized programmable WSe2 photodiode is constructed based on MAPbI3/WSe2 heterojunction, presenting flexible reconfigurable characteristics and prominent optoelectronic performances.
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Affiliation(s)
- Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, China.
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18
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Yang S, Liu K, Xu Y, Liu L, Li H, Zhai T. Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207901. [PMID: 36226584 DOI: 10.1002/adma.202207901] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Revised: 09/28/2022] [Indexed: 05/05/2023]
Abstract
2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.
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Affiliation(s)
- Sijie Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Kailang Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongshan Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lixin Liu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Huiqiao Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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19
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Liu B, Yildirim T, Lü T, Blundo E, Wang L, Jiang L, Zou H, Zhang L, Zhao H, Yin Z, Tian F, Polimeni A, Lu Y. Variant Plateau's law in atomically thin transition metal dichalcogenide dome networks. Nat Commun 2023; 14:1050. [PMID: 36828812 PMCID: PMC9958105 DOI: 10.1038/s41467-023-36565-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Accepted: 02/07/2023] [Indexed: 02/26/2023] Open
Abstract
Since its fundamental inception from soap bubbles, Plateau's law has sparked extensive research in equilibrated states. However, most studies primarily relied on liquids, foams or cellular structures, whereas its applicability has yet to be explored in nano-scale solid films. Here, we observed a variant Plateau's law in networks of atomically thin domes made of solid two-dimensional (2D) transition metal dichalcogenides (TMDs). Discrete layer-dependent van der Waals (vdWs) interaction energies were experimentally and theoretically obtained for domes protruding in different TMD layers. Significant surface tension differences from layer-dependent vdWs interaction energies manifest in a variant of this fundamental law. The equivalent surface tension ranges from 2.4 to 3.6 N/m, around two orders of magnitude greater than conventional liquid films, enabling domes to sustain high gas pressure and exist in a fundamentally variant nature for several years. Our findings pave the way towards exploring variant discretised states with applications in opto-electro-mechanical devices.
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Affiliation(s)
- Boqing Liu
- grid.1001.00000 0001 2180 7477School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601 Australia
| | - Tanju Yildirim
- grid.21941.3f0000 0001 0789 6880Center for Functional Sensor & Actuator (CFSN), Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japan
| | - Tieyu Lü
- grid.12955.3a0000 0001 2264 7233Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, 361005 China
| | - Elena Blundo
- grid.7841.aDipartimento di Fisica Sapienza Università di Roma, 00185 Roma, Italy
| | - Li Wang
- grid.1005.40000 0004 4902 0432School of Engineering and Information Technology, University of New South Wales, Canberra, ACT 2600 Australia
| | - Lixue Jiang
- grid.1022.10000 0004 0437 5432Centre for Catalysis and Clean Energy, Gold Coast Campus, Griffith University, Queensland, 4222 Australia
| | - Hongshuai Zou
- grid.64924.3d0000 0004 1760 5735State Key Laboratory of Integrated Optoelectronics, School of Materials Science and Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012 China
| | - Lijun Zhang
- grid.64924.3d0000 0004 1760 5735State Key Laboratory of Integrated Optoelectronics, School of Materials Science and Engineering, and Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012 China
| | - Huijun Zhao
- grid.1022.10000 0004 0437 5432Centre for Catalysis and Clean Energy, Gold Coast Campus, Griffith University, Queensland, 4222 Australia
| | - Zongyou Yin
- grid.1001.00000 0001 2180 7477Research School of Chemistry, College of Science, The Australian National University, Canberra, ACT 2601 Australia
| | - Fangbao Tian
- grid.1005.40000 0004 4902 0432School of Engineering and Information Technology, University of New South Wales, Canberra, ACT 2600 Australia
| | - Antonio Polimeni
- Dipartimento di Fisica Sapienza Università di Roma, 00185, Roma, Italy.
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 2601, Australia. .,ARC Centre of Excellence in Quantum Computation and Communication Technology ANU node, Canberra, ACT 2601, Australia.
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20
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Qiu L, Si G, Bao X, Liu J, Guan M, Wu Y, Qi X, Xing G, Dai Z, Bao Q, Li G. Interfacial engineering of halide perovskites and two-dimensional materials. Chem Soc Rev 2023; 52:212-247. [PMID: 36468561 DOI: 10.1039/d2cs00218c] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/07/2022]
Abstract
Recently, halide perovskites (HPs) and layered two-dimensional (2D) materials have received significant attention from industry and academia alike. HPs are emerging materials that have exciting photoelectric properties, such as a high absorption coefficient, rapid carrier mobility and high photoluminescence quantum yields, making them excellent candidates for various optoelectronic applications. 2D materials possess confined carrier mobility in 2D planes and are widely employed in nanostructures to achieve interfacial modification. HP/2D material interfaces could potentially reveal unprecedented interfacial properties, including light absorbance with desired spectral overlap, tunable carrier dynamics and modified stability, which may lead to several practical applications. In this review, we attempt to provide a comprehensive perspective on the development of interfacial engineering of HP/2D material interfaces. Specifically, we highlight the recent progress in HP/2D material interfaces considering their architectures, electronic energetics tuning and interfacial properties, discuss the potential applications of these interfaces and analyze the challenges and future research directions of interfacial engineering of HP/2D material interfaces. This review links the fields of HPs and 2D materials through interfacial engineering to provide insights into future innovations and their great potential applications in optoelectronic devices.
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Affiliation(s)
- Lei Qiu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Guangyuan Si
- Melbourne Center for Nanofabrication, Victorian Node of the Australian National Fabrication Facility, 151 Wellington Road, Clayton, Victoria 3168, Australia
| | - Xiaozhi Bao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China
| | - Jun Liu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Mengyu Guan
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Yiwen Wu
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China.
| | - Xiang Qi
- Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic, Xiangtan University, Hunan 411105, China
| | - Guichuan Xing
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Macau SAR 999078, China
| | - Zhigao Dai
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China. .,Shenzhen Institute, China University of Geosciences, Shenzhen 518057, China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, China.,Nanjing kLight Laser Technology Co. Ltd., Nanjing, Jiangsu 210032, China.
| | - Guogang Li
- Engineering Research Center of Nano-Geomaterials of Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, 388 Lumo Road, Wuhan 430074, China. .,Zhejiang Institute, China University of Geosciences, Hangzhou 311305, China
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21
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Gu H, Guo Z, Huang L, Fang M, Liu S. Investigations of Optical Functions and Optical Transitions of 2D Semiconductors by Spectroscopic Ellipsometry and DFT. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:196. [PMID: 36616106 PMCID: PMC9823946 DOI: 10.3390/nano13010196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2022] [Revised: 12/28/2022] [Accepted: 12/29/2022] [Indexed: 06/17/2023]
Abstract
Optical functions and transitions are essential for a material to reveal the light-matter interactions and promote its applications. Here, we propose a quantitative strategy to systematically identify the critical point (CP) optical transitions of 2D semiconductors by combining the spectroscopic ellipsometry (SE) and DFT calculations. Optical functions and CPs are determined by SE, and connected to DFT band structure and projected density of states via equal-energy and equal-momentum lines. The combination of SE and DFT provides a powerful tool to investigate the CP optical transitions, including the transition energies and positions in Brillouin zone (BZ), and the involved energy bands and carries. As an example, the single-crystal monolayer WS2 is investigated by the proposed method. Results indicate that six excitonic-type CPs can be quantitatively distinguished in optical function of the monolayer WS2 over the spectral range of 245-1000 nm. These CPs are identified as direct optical transitions from three highest valence bands to three lowest conduction bands at high symmetry points in BZ contributed by electrons in S-3p and W-5d orbitals. Results and discussion on the monolayer WS2 demonstrate the effectiveness and advantages of the proposed method, which is general and can be easily extended to other materials.
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Affiliation(s)
- Honggang Gu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science & Technology, Wuhan 430074, China
- Optics Valley Laboratory, Wuhan 430074, China
| | - Zhengfeng Guo
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science & Technology, Wuhan 430074, China
- Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Liusheng Huang
- Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Mingsheng Fang
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Shiyuan Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science & Technology, Wuhan 430074, China
- Innovation Institute, Huazhong University of Science and Technology, Wuhan 430074, China
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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22
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Chang H, Zhang J. From cavity optomechanics to cavity-less exciton optomechanics: a review. NANOSCALE 2022; 14:16710-16730. [PMID: 36245359 DOI: 10.1039/d2nr03784j] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Cavity optomechanical coupling based on radiation pressure, photothermal forces and the photoelastic effect has been investigated widely over the past few decades, including optical measurements of mechanical vibration, dynamic backaction damping and amplification, nonlinear dynamics, quantum state transfer and so on. However, the delicate cavity operation, including cavity stabilization, fine detuning, tapered fibre access etc., limits the integration of cavity optomechanical devices. Dynamic backaction damping and amplification based on cavity-less exciton optomechanical coupling in III-V semiconductor nanomechanical systems, semiconductor nanoribbons and monolayer transition metal dichalcogenides have been demonstrated in recent years. The cavity-less exciton optomechanical systems interconnect photons, phonons and excitons in a highly integrable platform, opening up the development of integrable optomechanics. Furthermore, the highly tunable exciton resonance enables the exciton optomechanical coupling strength to be tuned. In this review, the mechanisms of cavity optomechanical coupling, the principles of exciton optomechanical coupling and the recent progress of cavity-less exciton optomechanics are reviewed. Moreover, the perspectives for exciton optomechanical devices are described.
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Affiliation(s)
- Haonan Chang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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23
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Wang L, Wang P, Huang J, Peng B, Jia C, Qian Q, Zhou J, Xu D, Huang Y, Duan X. A general one-step plug-and-probe approach to top-gated transistors for rapidly probing delicate electronic materials. NATURE NANOTECHNOLOGY 2022; 17:1206-1213. [PMID: 36266508 DOI: 10.1038/s41565-022-01221-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/11/2022] [Accepted: 09/04/2022] [Indexed: 06/16/2023]
Abstract
The miniaturization of silicon-based electronics has motivated considerable efforts in exploring new electronic materials, including two-dimensional semiconductors and halide perovskites, which are usually too delicate to maintain their intrinsic properties during the harsh device fabrication steps. Here we report a convenient plug-and-probe approach for one-step simultaneous van der Waals integration of high-k dielectrics and contacts to enable top-gated transistors with atomically clean and electronically sharp dielectric and contact interfaces. By applying the plug-and-probe top-gate transistor stacks on two-dimensional semiconductors, we demonstrate an ideal subthreshold swing of 60 mV per decade. Using this approach on delicate lead halide perovskite, we realize a high-k top-gate CsPbBr3 transistor with a low operating voltage and a very high two-terminal field-effect mobility of 32 cm2 V-1 s-1. This approach can be extended to centimetre-scale MoS2 and perovskite and generate top-gated transistor arrays, offering a rapid and convenient way of accessing intrinsic properties of delicate emerging materials.
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Affiliation(s)
- Laiyuan Wang
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Peiqi Wang
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Jin Huang
- Department of Material Science and Engineering, University of California, Los Angeles, Los Angeles, CA, USA
| | - Bosi Peng
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Chuancheng Jia
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Qi Qian
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Jingyuan Zhou
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA
| | - Dong Xu
- Department of Material Science and Engineering, University of California, Los Angeles, Los Angeles, CA, USA
| | - Yu Huang
- Department of Material Science and Engineering, University of California, Los Angeles, Los Angeles, CA, USA
- California Nanosystems Institute (CNSI), University of California, Los Angeles, Los Angeles, CA, USA
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles, Los Angeles, CA, USA.
- California Nanosystems Institute (CNSI), University of California, Los Angeles, Los Angeles, CA, USA.
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24
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Wang H, Wang W, Zhong Y, Li D, Li Z, Xu X, Song X, Chen Y, Huang P, Mei A, Han H, Zhai T, Zhou X. Approaching the External Quantum Efficiency Limit in 2D Photovoltaic Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206122. [PMID: 35953088 DOI: 10.1002/adma.202206122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/05/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
2D transition metal dichalcogenides (TMDs) are promising candidates for realizing ultrathin and high-performance photovoltaic devices. However, the external quantum efficiency (EQE) and power conversion efficiency (PCE) of most 2D photovoltaic devices face great challenges in exceeding 50% and 3%, respectively, due to the low efficiency of photocarrier separation and collection. Here, this study demonstrates photovoltaic devices with defect-free interface and recombination-free channel based on 2D WS2 , showing high EQE of 92% approaching the theoretical limit and high PCE of 5.0%. The high performances are attributed to the van der Waals metal contact without interface defects and Fermi-level pinning, and the fully depleted channel without photocarrier recombination, leading to intrinsic photocarrier separation and collection with high efficiency. Furthermore, this study demonstrates that the strategy can be extended to other TMDs such as MoSe2 and WSe2 with EQE of 92% and 94%, respectively. This work proposes a universal strategy for building high-performance 2D photovoltaic devices. The nearly ideal EQE provides great potential for PCE approaching the Shockley-Queisser limit.
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Affiliation(s)
- Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Wei Wang
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yongle Zhong
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xiang Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xingyu Song
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Yunxin Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Pu Huang
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Anyi Mei
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Hongwei Han
- Michael Grätzel Center for Mesoscopic Solar Cells, Wuhan National Laboratory for Optoelectronics, Key Laboratory of Materials Chemistry for Energy Conversion and Storage of Ministry of Education, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
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25
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McClintock L, Song Z, Travaglini HC, Senger RT, Chandrasekaran V, Htoon H, Yarotski D, Yu D. Highly Mobile Excitons in Single Crystal Methylammonium Lead Tribromide Perovskite Microribbons. J Phys Chem Lett 2022; 13:3698-3705. [PMID: 35439010 DOI: 10.1021/acs.jpclett.2c00274] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Excitons are often given negative connotation in solar energy harvesting in part due to their presumed short diffusion lengths. We investigate exciton transport in single-crystal methylammonium lead tribromide (MAPbBr3) microribbons via spectrally, spatially, and temporally resolved photocurrent and photoluminescence measurements. Distinct peaks in the photocurrent spectra unambiguously confirm exciton formation and allow for accurate extraction of the low temperature exciton binding energy (39 meV). Photocurrent decays within a few μm at room temperature, while a gate-tunable long-range photocurrent component appears at lower temperatures (about 100 μm below 140 K). Carrier lifetimes of 1.2 μs or shorter exclude the possibility of the long decay length arising from slow trapped-carrier hopping. Free carrier diffusion is also an unlikely source of the highly nonlocal photocurrent, due to their small fraction at low temperatures. We attribute the long-distance transport to high-mobility excitons, which may open up new opportunities for novel exciton-based photovoltaic applications.
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Affiliation(s)
- Luke McClintock
- Department of Physics, University of California─Davis, One Shields Avenue, Davis, California 95616, United States
| | - Ziyi Song
- Department of Physics, University of California─Davis, One Shields Avenue, Davis, California 95616, United States
| | - H Clark Travaglini
- Department of Physics, University of California─Davis, One Shields Avenue, Davis, California 95616, United States
| | - R Tugrul Senger
- Department of Physics, Izmir Institute of Technology, 35430 Izmir, Turkey
- ICTP-ECAR Eurasian Center for Advanced Research, Izmir Institute of Technology, 35430 Izmir, Turkey
| | - Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnology, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Han Htoon
- Center for Integrated Nanotechnology, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Dmitry Yarotski
- Center for Integrated Nanotechnology, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Dong Yu
- Department of Physics, University of California─Davis, One Shields Avenue, Davis, California 95616, United States
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26
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Uddin SZ, Higashitarumizu N, Kim H, Rabani E, Javey A. Engineering Exciton Recombination Pathways in Bilayer WSe 2 for Bright Luminescence. ACS NANO 2022; 16:1339-1345. [PMID: 35014783 DOI: 10.1021/acsnano.1c09255] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Exciton-exciton annihilation (EEA) in counterdoped monolayer transition metal dichalcogenides (TMDCs) can be suppressed by favorably changing the band structure with strain. The photoluminescence (PL) quantum yield (QY) monotonically approaches unity with strain at all generation rates. In contrast, here in bilayers (2L) of tungsten diselenide (WSe2) we observe a nonmonotonic change in EEA rate at high generation rates accompanied by a drastic enhancement in their PL QY at low generation rates. EEA is suppressed at both 0% and 1% strain, but activated at intermediate strains. We explain our observation through the indirect to direct transition in 2L WSe2 under uniaxial tensile strain. By strain and electrostatic counterdoping, we attain ∼50% PL QY at all generation rates in 2L WSe2, originally an indirect semiconductor. We demonstrate transient electroluminescence from 2L WSe2 with ∼1.5% internal quantum efficiency for a broad range of carrier densities by applying strain, which is ∼50 times higher than without strain. The present results elucidate the complete optoelectronic photophysics where indirect and direct excitons are simultaneously present and expedite exciton engineering in a TMDC multilayer beyond indirect-direct bandgap transition.
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Affiliation(s)
- Shiekh Zia Uddin
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Naoki Higashitarumizu
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Hyungjin Kim
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eran Rabani
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
- Department of Chemistry, University of California, Berkeley, Berkeley, California 94720, United States
- The Raymond and Beverly Sackler Center of Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 69978, Israel
| | - Ali Javey
- Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
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