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Wu Y, Ji L, Ding Y, Zhou L. High throughput screening of semiconductors with low lattice thermal transport induced by long-range interactions. MATERIALS HORIZONS 2024; 11:3651-3661. [PMID: 38767150 DOI: 10.1039/d4mh00363b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2024]
Abstract
Semiconductors with long-range interactions (LRI) due to resonant bonding exhibit delocalized electronic states and low lattice thermal conductivity, contributing to the efficiency of heat-to-electricity conversion. Here, we build a descriptor for high-throughput screening of LRI materials from the second-order interaction force constants. We identify 75 semiconducting candidates from the binary compounds in the MatHub-3d database that contain LRI. By analyzing the bonding properties of LRI atoms, we classify LRI in materials into two categories: type I and type II. In the structural unit of type I LRI, the atoms have strong bond connections, while a weak bond exists between the two groups in the structural unit of type II LRI. We have identified atypical type I LRI formed by Sb-Sb and Mg-Mg pairs in the emerging thermoelectric material Mg3Sb2, resulting in the softening of TA1 phonons and large anharmonicity. For type II LRI, the LRI of Ge-Ge and Se-Se pairs in R3m-GeSe can cross different layers. Moreover, we observe a combination of type II LRI and rattling effect in BaSe2 to restrict thermal transport. This work is of great significance for understanding the relationship between LRI and thermal transport properties, and for designing new LRI-induced low lattice thermal conductivity materials.
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Affiliation(s)
- Yu Wu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Linxuan Ji
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
| | - Yimin Ding
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China.
| | - Liujiang Zhou
- School of Physics and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
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Barik RK, Woods LM. High throughput calculations for a dataset of bilayer materials. Sci Data 2023; 10:232. [PMID: 37085503 PMCID: PMC10121719 DOI: 10.1038/s41597-023-02146-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2023] [Accepted: 04/11/2023] [Indexed: 04/23/2023] Open
Abstract
Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.
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Affiliation(s)
- Ranjan Kumar Barik
- Department of Physics, University of South Florida, Tampa, Florida, 33620, USA.
| | - Lilia M Woods
- Department of Physics, University of South Florida, Tampa, Florida, 33620, USA.
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Ji J, Tang Q, Yao M, Yang H, Jin Y, Zhang Y, Xi J, Singh DJ, Yang J, Zhang W. Functional-Unit-Based Material Design: Ultralow Thermal Conductivity in Thermoelectrics with Linear Triatomic Resonant Bonds. J Am Chem Soc 2022; 144:18552-18561. [PMID: 36136764 DOI: 10.1021/jacs.2c08062] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
We demonstrate the use of functional-unit-based material design for thermoelectrics. This is an efficient approach for identifying high-performance thermoelectric materials, based on the use of combinations of functional fragments relevant to desired properties. Here, we reveal that linear triatomic resonant bonds (LTRBs) found in some Zintl compounds provide strong anisotropy both structurally and electronically, along with strong anharmonic phonon scattering. An LTRB is thus introduced as a functional unit, and compounds are then screened as potential thermoelectric materials. We identify 17 semiconducting candidates from the MatHub-3d database that contain LTRBs. Detailed transport calculations demonstrate that the LTRB-containing compounds not only have considerably lower lattice thermal conductivities than other compounds with similar average atomic masses, but also exhibit remarkable band anisotropy near the valence band maximums due to the LTRB. K5CuSb2 is adopted as an example to elucidate the fundamental correlation between the LTRB and thermoelectric properties. The [Sb-Cu-Sb]5- resonant structures demonstrate the delocalized Sb-Sb interaction within each LTRB, resulting in the softening of TA phonons and leading to large anharmonicity. The low lattice thermal conductivity (0.39 W/m·K at 300 K) combined with the band anisotropy results in a high thermoelectric figure of merit (ZT) for K5CuSb2 of 1.3 at 800 K. This work is a case study of the functional-unit-based material design for the development of novel thermoelectric materials.
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Affiliation(s)
- Jialin Ji
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Qinghang Tang
- Materials Genome Institute, Shanghai University, Shanghai 200444, China.,Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China
| | - Mingjia Yao
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Hongliang Yang
- Department of Materials Science and Engineering and Shenzhen Institute for Quantum Science and Technology, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Yeqing Jin
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Yubo Zhang
- Department of Materials Science and Engineering and Shenzhen Institute for Quantum Science and Technology, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.,Shenzhen Municipal Key-Lab for Advanced Quantum Materials and Devices and Guangdong Provincial Key Lab for Computational Science and Materials Design, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Jinyang Xi
- Materials Genome Institute, Shanghai University, Shanghai 200444, China.,Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - David J Singh
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai 200444, China.,Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - Wenqing Zhang
- Department of Materials Science and Engineering and Shenzhen Institute for Quantum Science and Technology, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China.,Shenzhen Municipal Key-Lab for Advanced Quantum Materials and Devices and Guangdong Provincial Key Lab for Computational Science and Materials Design, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
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Xiong Y, Jin Y, Deng T, Mei K, Qiu P, Xi L, Zhou Z, Yang J, Shi X, Chen L. High-Throughput Screening for Thermoelectric Semiconductors with Desired Conduction Types by Energy Positions of Band Edges. J Am Chem Soc 2022; 144:8030-8037. [PMID: 35446042 DOI: 10.1021/jacs.1c13713] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/20/2023]
Abstract
The conduction type of semiconductors is vitally important in many fields (e.g., photovoltaics, transistors, and thermoelectrics), but so far, there is no effective and simple indicator to quickly judge or predict the conduction type of various semiconductors. In this work, based on the relationship between the formation energy of charged defect and the Fermi level, we propose a simple and low-cost strategy for high-throughput screening the potential n-type or p-type semiconductors from the material database by using energy positions of band edges as indicators. As a case study, we validate this strategy in searching potential n-type thermoelectric materials from copper (Cu)-containing metal chalcogenides. A new promising thermoelectric material, CuIn5Se8, with potential intrinsic n-type conduction, is successfully screened from 407 Cu-containing metal chalcogenides and validated in the subsequent experiments. Upon doping iodine in CuIn5Se8, a peak thermoelectric figure of merit zT of 0.84 is obtained at 850 K. Beyond thermoelectrics, the strategy proposed in this study also sheds light on the new material development with desired conduction types in photovoltaics, transistors, and other fields.
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Affiliation(s)
- Yifei Xiong
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yeqing Jin
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Tingting Deng
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Kaili Mei
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Pengfei Qiu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China
| | - Lili Xi
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
| | - Zhengyang Zhou
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jiong Yang
- Materials Genome Institute, Shanghai University, Shanghai 200444, China.,Zhejiang Laboratory, Hangzhou, Zhejiang 311100, China
| | - Xun Shi
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lidong Chen
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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Xu P, Chen H, Li M, Lu W. New Opportunity: Machine Learning for Polymer Materials Design and Discovery. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202100565] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Pengcheng Xu
- Materials Genome Institute Shanghai University Shanghai 200444 China
| | - Huimin Chen
- Department of Mathematics College of Sciences Shanghai University Shanghai 200444 China
| | - Minjie Li
- Department of Chemistry College of Sciences Shanghai University Shanghai 200444 China
| | - Wencong Lu
- Materials Genome Institute Shanghai University Shanghai 200444 China
- Department of Chemistry College of Sciences Shanghai University Shanghai 200444 China
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