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Muller AA, Moldoveanu A, Asavei V, Khadar RA, Sanabria-Codesal E, Krammer A, Fernandez-Bolaños M, Cavalieri M, Zhang J, Casu E, Schuler A, Ionescu AM. 3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors. Sci Rep 2019; 9:18346. [PMID: 31797967 PMCID: PMC6892935 DOI: 10.1038/s41598-019-54600-5] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/10/2019] [Accepted: 11/15/2019] [Indexed: 11/21/2022] Open
Abstract
Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency functions, new types of sensors, terahertz and optoelectronic devices. Employing radiofrequency (RF) electronic circuits with a MIT material like vanadium Dioxide, VO2, requires appropriate characterization tools and fabrication processes. In this work, we develop and use 3D Smith charts for devices and circuits having complex frequency dependences, like the ones resulting using MIT materials. The novel foundation of a 3D Smith chart involves here the geometrical fundamental notions of oriented curvature and variable homothety in order to clarify first theoretical inconsistencies in Foster and Non Foster circuits, where the driving point impedances exhibit mixed clockwise and counter-clockwise frequency dependent (oriented) paths on the Smith chart as frequency increases. We show here the unique visualization capability of a 3D Smith chart, which allows to quantify orientation over variable frequency. The new 3D Smith chart is applied as a joint complex-scalar 3D multi-parameter modelling and characterization environment for reconfigurable RF design exploiting Metal-Insulator-Transition (MIT) materials. We report fabricated inductors with record quality factors using VO2 phase transition to program multiple tuning states, operating in the range 4 GHz to 10 GHz.
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Affiliation(s)
- Andrei A Muller
- Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland.
| | - Alin Moldoveanu
- Department of Computer Science and Engineering, Faculty of Automatic Control and Computers, University Politehnica of Bucharest, 060042, Bucharest, Romania
| | - Victor Asavei
- Department of Computer Science and Engineering, Faculty of Automatic Control and Computers, University Politehnica of Bucharest, 060042, Bucharest, Romania
| | - Riyaz A Khadar
- Powerlab, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Esther Sanabria-Codesal
- Departamento de Matemática Aplicada, Universitat Politècnica de València, 46022, Valencia, Spain
| | - Anna Krammer
- Solar Energy and Building Physics Laboratory (LESO-PB), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Montserrat Fernandez-Bolaños
- Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Matteo Cavalieri
- Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Junrui Zhang
- Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Emanuele Casu
- Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Andreas Schuler
- Solar Energy and Building Physics Laboratory (LESO-PB), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Adrian M Ionescu
- Nanoelectronic Devices Laboratory (NanoLab), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
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