Composition and temperature dependence of self-diffusion in Si1-x Ge x alloys

Thermodynamics of Point Defects in Solids and Relation with the Bulk Properties: Recent Results

For several decades, the crucial question has arisen as to whether there exists any direct interconnection between the thermodynamic parameters of point defects in solids with the bulk properties of the solid under investigation. To answer this important question, an interrelation of the defect Gibbs energy gi in solids with bulk properties has been proposed almost half a century ago. Considering that gi corresponds to an isobaric and isothermal process, this interrelation states that, for different processes (defect formation, self-diffusion activation, and heterodiffusion), gi is proportional to the isothermal bulk modulus B and the mean volume per atom Ω, termed cBΩ model. Here, we review several challenging applications of this interrelation that appeared during the last decade (2011–2021), including high pressure diamond anvil measurements, high Tc superconductors, nuclear fuels, and materials for micro-electronics devices, applications of usefulness in Geophysics and Seismology, a problem of major technological interest, search for compositions of better target properties in Cu-Co-Si alloys via machine learning as well as two independent studies on the physical origin of this interrelation that has been further strengthened during the last few years.

Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals

We present a detailed study regarding the bandgap dependence on diameter and composition of spherical Ge-rich Ge_xSi_1−x nanocrystals (NCs). For this, we conducted a series of atomistic density functional theory (DFT) calculations on H-passivated NCs of Ge-rich GeSi random alloys, with Ge atomic concentration varied from 50 to 100% and diameters ranging from 1 to 4 nm. As a result of the dominant confinement effect in the DFT computations, a composition invariance of the line shape of the bandgap diameter dependence was found for the entire computation range, the curves being shifted for different Ge concentrations by ΔE(eV) = 0.651(1 − x). The shape of the dependence of NCs bandgap on the diameter is well described by a power function 4.58/d^1.25 for 2–4 nm diameter range, while for smaller diameters, there is a tendency to limit the bandgap to a finite value. By H-passivation of the NC surface, the effect of surface states near the band edges is excluded aiming to accurately determine the NC bandgap. The number of H atoms necessary to fully passivate the spherical Ge_xSi_1−x NC surface reaches the total number atoms of the Ge + Si core for smallest NCs and still remains about 25% from total number of atoms for bigger NC diameters of 4 nm. The findings are in line with existing theoretical and experimental published data on pure Ge NCs and allow the evaluation of the GeSi NCs behavior required by desired optical sensor applications for which there is a lack of DFT simulation data in literature.

Electronegativity and doping in Si1-xGex alloys

Silicon germanium alloys are technologically important in microelectronics but also they are an important paradigm and model system to study the intricacies of the defect processes on random alloys. The key in semiconductors is that dopants and defects can tune their electronic properties and although their impact is well established in elemental semiconductors such as silicon they are not well characterized in random semiconductor alloys such as silicon germanium. In particular the impact of electronegativity of the local environment on the electronic properties of the dopant atom needs to be clarified. Here we employ density functional theory in conjunction with special quasirandom structures model to show that the Bader charge of the dopant atoms is strongly dependent upon the nearest neighbor environment. This in turn implies that the dopants will behave differently is silicon-rich and germanium-rich regions of the silicon germanium alloy.

Self-Diffusion in Perovskite and Perovskite Related Oxides: Insights from Modelling

Perovskite and perovskite related oxides are important materials with applications ranging from solid oxide fuel cells, electronics, batteries and high temperature superconductors. The investigation of physical properties at the atomic scale such as self-diffusion is important to further improve and/or miniaturize electronic or energy related devices. In the present review we examine the oxygen self-diffusion and defect processes in perovskite and perovskite related oxides. This contribution is not meant to be an exhaustive review of the literature but rather aims to highlight the important mechanisms and ways to tune self-diffusion in this important class of energy materials.

An Overview of the Experimental Studies on the Electrical Conductivity of Major Minerals in the Upper Mantle and Transition Zone

In this paper, we present the recent progress in the experimental studies of the electrical conductivity of dominant nominally anhydrous minerals in the upper mantle and mantle transition zone of Earth, namely, olivine, pyroxene, garnet, wadsleyite and ringwoodite. The main influence factors, such as temperature, pressure, water content, oxygen fugacity, and anisotropy are discussed in detail. The dominant conduction mechanisms of Fe-bearing silicate minerals involve the iron-related small polaron with a relatively large activation enthalpy and the hydrogen-related defect with lower activation enthalpy. Specifically, we mainly focus on the variation of oxygen fugacity on the electrical conductivity of anhydrous and hydrous mantle minerals, which exhibit clearly different charge transport processes. In representative temperature and pressure environments, the hydrogen of nominally anhydrous minerals can tremendously enhance the electrical conductivity of the upper mantle and transition zone, and the influence of trace structural water (or hydrogen) is substantial. In combination with the geophysical data of magnetotelluric surveys, the laboratory-based electrical conductivity measurements can provide significant constraints to the water distribution in Earth’s interior.

Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure

Si–Ge crystals are promising materials for use in various stress-controlled electronic junctions for next-generation nanoelectronic devices.

Impact of local composition on the energetics of E-centres in Si1-xGex alloys

The energetics of the defect chemistry and processes in semiconducting alloys is both technologically and theoretically significant. This is because defects in semiconductors are critical to tune their electronic properties. These processes are less well understood in random semiconductor alloys such as silicon germanium as compared to elementary semiconductors (for example silicon). To model the random silicon germanium alloy we have employed density functional theory calculations in conjunction with the special quasirandom structures model for different compositions. Here we show that, the energetics of substitutional phosphorous-vacancy pairs (E-centres) in Si_1−xGe_x alloys vary greatly with respect to the local Ge concentration and the composition of the alloy. The most energetically favourable E-centres have a Ge atom as a nearest neighbour, whereas the dependence of the binding energy of the E-centres with respect to alloy composition is non-linear.

Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results

Germanium is an important mainstream material for many nanoelectronic and sensor applications. The understanding of diffusion at an atomic level is important for fundamental and technological reasons. In the present review, we focus on the description of recent studies concerning n-type dopants, isovalent atoms, p-type dopants, and metallic and oxygen diffusion in germanium. Defect engineering strategies considered by the community over the past decade are discussed in view of their potential application to other systems.

A roadmap of strain in doped anatase TiO2

Anatase titanium oxide is important for its high chemical stability and photocatalytic properties, however, the latter are plagued by its large band gap that limits its activity to only a small percentage of the solar spectrum. In that respect, straining the material can reduce its band gap increasing the photocatalytic activity of titanium oxide. We apply density functional theory with the introduction of the Hubbard + U model, to investigate the impact of stress on the electronic structure of anatase in conjunction with defect engineering by intrinsic defects (oxygen/titanium vacancies and interstitials), metallic dopants (iron, chromium) and non-metallic dopants (carbon, nitrogen). Here we show that both biaxial and uniaxial strain can reduce the band gap of undoped anatase with the use of biaxial strain being marginally more beneficial reducing the band gap up to 2.96 eV at a tensile stress of 8 GPa. Biaxial tensile stress in parallel with doping results in reduction of the band gap but also in the introduction of states deep inside the band gap mainly for interstitially doped anatase. Dopants in substitutional positions show reduced deep level traps. Chromium-doped anatase at a tensile stress of 8 GPa shows the most significant reduction of the band gap as the band gap reaches 2.4 eV.

Defects and lithium migration in Li2CuO2

Li₂CuO₂ is an important candidate material as a cathode in lithium ion batteries. Atomistic simulation methods are used to investigate the defect processes, electronic structure and lithium migration mechanisms in Li₂CuO₂. Here we show that the lithium energy of migration via the vacancy mechanism is very low, at 0.11 eV. The high lithium Frenkel energy (1.88 eV/defect) prompted the consideration of defect engineering strategies in order to increase the concentration of lithium vacancies that act as vehicles for the vacancy mediated lithium self-diffusion in Li₂CuO₂. It is shown that aluminium doping will significantly reduce the energy required to form a lithium vacancy from 1.88 eV to 0.97 eV for every aluminium introduced, however, it will also increase the migration energy barrier of lithium in the vicinity of the aluminium dopant to 0.22 eV. Still, the introduction of aluminium is favourable compared to the lithium Frenkel process. Other trivalent dopants considered herein require significantly higher solution energies, whereas their impact on the migration energy barrier was more pronounced. When considering the electronic structure of defective Li₂CuO₂, the presence of aluminium dopants results in the introduction of electronic states into the energy band gap. Therefore, doping with aluminium is an effective doping strategy to increase the concentration of lithium vacancies, with a minimal impact on the kinetics.

Lithium diffusion in Li5FeO4

The anti-fluorite type Li₅FeO₄ has attracted significant interest as a potential cathode material for Li ion batteries due to its high Li content and electrochemical performance. Atomic scale simulation techniques have been employed to study the defects and Li ion migration in Li₅FeO₄. The calculations suggest that the most favorable intrinsic defect type is calculated to be the cation anti-site defect, in which Li⁺ and Fe³⁺ ions exchange positions. Li Frenkel is also found to be lower in this material (0.85 eV/defect). Long range lithium diffusion paths were constructed in Li₅FeO₄ and it is confirmed that the lower migration paths are three dimensional with the lowest activation energy of migration at 0.45 eV. Here we show that doping by Si on the Fe site is energetically favourable and an efficient way to introduce a high concentration of lithium vacancies. The introduction of Si increases the migration energy barrier of Li in the vicinity of the dopant to 0.59 eV. Nevertheless, the introduction of Si is positive for the diffusivity as the migration energy barrier increase is lower less than that of the lithium Frenkel process, therefore the activation energy of Li diffusion.