Quasiparticle and optical properties of strained stanene and stanane

Quasiparticle energies and significant exciton effects of monolayered blue arsenic phosphorus conformers

Low-dimensional systems have strong multi-body interactions and fewer geometric constraints due to the screening effect of the Coulomb interaction. We use the single-shot GW-Bethe Salpeter equation (G₀W₀-BSE) to calculate the electronic and optical properties of six-blue arsenic phosphorus (β-AsP) conformers. The results show significant anisotropic exciton effects of covering visible regions, which apparently changed the light absorption. The maximum exciton binding energy is up to 0.99 eV, which is more extensive than the black phosphorus monolayer (0.9 eV). We predict that the different orbital contributions to valence bands may cause the anisotropic exciton effect difference. Our results indicate that β-AsP monolayers with the large binding energies of exciton hold a great promise for applications in optoelectronic devices.

Optical absorption spectra of Xene and Xane (Xsilic, german, stan)

We study optical absorption spectra of Xene and Xane (X = silic, german, stan). The results show that the optical absorption spectra of Xenes are dominated by a sharp peak near the origin due to direct interband transitions near theKpoint of the Brillouin zone. Meanwhile, the optical absorption spectra of Xanes are characterized by an excitonic peak. The Xenes are zero-gap materials with a Dirac cone at theKpoint, whereas Xanes are semiconductors with sizable band gaps. The quasiparticle band gaps of silicane, germanane, and stanane are 3.60, 2.21, and 1.35 eV, respectively; their exciton binding energies are 0.40, 0.33, and 0.20 eV, respectively.

Staggering transport of edge states and symmetry analysis of electronic and optical properties of stanene

As one of the most intriguing elemental 2D materials beyond graphene, stanene is a unique material possessing strong quantum spin Hall effect and is promising for spintronics applications. Since most of these exotic phenomena are associated with the edge states of stanene and their responses under external stimuli, here, we first investigate the electronic and transport behavior of the edge states of stanene. Through examining the acoustic phonon-limited scattering of transporting carriers, we reveal a staggering behavior in the effective mass and mobility varying with the width of stanene nanoribbons. Remarkably, an opposite oscillating trend of the quantum confinement effect with respect to the electrons and holes is found and this trend is in sharp contrast to graphene. Moreover, through group-theory analysis, we further analyze the symmetry-permitted light absorptions and predict a much smaller band gap at Γ compared with other IV-group 2D materials like graphene and silicene, allowing for a red-shift of optical π-π* absorption in stanene. The presence of the narrow flat bands along the M-K path in stanene suggests appreciable density of states of low-energy carriers and a strong light-matter interaction for low-energy photons, which are beneficial for its applications in low-frequency optoelectronics.

Structural and electronic properties of two-dimensional hydrogenated Xenes

Structural and electronic properties of pristine two-dimensional group IV Xenes (X  =  C, Si, Ge, Sn, Pb) and hydrogenated Xenes are studied, using density functional theory (DFT) calculations with and without spin-orbit coupling (SOC). The pristine hexagonal monolayer Xenes show buckled structure upon relaxation except graphene. The buckling [Formula: see text] increases linearly from graphene to plumbene. The band structures without SOC of group-IV Xenes are semi-metallic. However, inclusion of SOC mainly opens the bandgap at the Dirac point. Semi hydrogenation leads to enhanced buckling in all Xenes which indicate a tendency towards more sp ³ like structures. The electronic structures of semi hydrogenated Xenes do not show Dirac cones. Spin polarized band structures show magnetism with magnetic moment of 1.0 [Formula: see text] and all SH Xenes are magnetic semiconductor except SH plumbene. Full hydrogenation vanishes buckling upon relaxation and the structure becomes planar implying sp ²-like hybridization. The band structures for fully hydrogenated Xenes turns out to be semiconducting and the Dirac cones also disappear. The bandgap changes from indirect to direct at FH stanene, while FH plumbene turns out to be semi-metallic. SOC gives rise to bandgap of 0.47 eV in FH plumbene, which is otherwise a semi-metal.

Beyond Graphene: Chemistry of Group 14 Graphene Analogues: Silicene, Germanene, and Stanene

Two-dimensional materials have been extensively studied over the last two decades as they represent a class of materials with properties applicable in catalysis, sensing, optical devices, nanoelectronics, supercapacitors, and semiconductors. The properties of 2D materials can be tuned by exfoliation into mono- or few-layered systems and mainly by surface modification, which can result, for example, in altering the band gap or enhancing material stability toward degradation. This review focuses on the derivatization of group 14 layered materials beyond graphene silicene, germanene, and stanene and summarizes their preparation as well as chemical and physical properties. This review provides the current state-of-the-art in the field and provides a perspective for future development in the field of chemical derivatization of 2D materials beyond graphene.

The GW Compendium: A Practical Guide to Theoretical Photoemission Spectroscopy

The GW approximation in electronic structure theory has become a widespread tool for predicting electronic excitations in chemical compounds and materials. In the realm of theoretical spectroscopy, the GW method provides access to charged excitations as measured in direct or inverse photoemission spectroscopy. The number of GW calculations in the past two decades has exploded with increased computing power and modern codes. The success of GW can be attributed to many factors: favorable scaling with respect to system size, a formal interpretation for charged excitation energies, the importance of dynamical screening in real systems, and its practical combination with other theories. In this review, we provide an overview of these formal and practical considerations. We expand, in detail, on the choices presented to the scientist performing GW calculations for the first time. We also give an introduction to the many-body theory behind GW, a review of modern applications like molecules and surfaces, and a perspective on methods which go beyond conventional GW calculations. This review addresses chemists, physicists and material scientists with an interest in theoretical spectroscopy. It is intended for newcomers to GW calculations but can also serve as an alternative perspective for experts and an up-to-date source of computational techniques.

Dynamically Stable Topological Phase of Arsenene

First-principles calculations based on density functional theory (DFT) are used to investigate the electronic structures and topological phase transition of arsenene under tensile and compressive strains. Buckling in arsenene strongly depends on compressive/tensile strain. The phonons band structures reveal that arsenene is dynamically stable up to 18% tensile strain and the frequency gap between the optical and acoustic branches decreases with strain. The electronic band structures show the direct bandgap decreases with tensile strain and then closes at 13% strain followed by band inversion. With spin-orbit coupling (SOC), the 14% strain-assisted topological insulator phase of arsenene is mainly governed by the p-orbitals. The SOC calculated bandgap is about 43 meV. No imaginary frequency in the phonons is observed in the topological phase of arsenene. The dynamically stable topological phase is accessed through Z2 topological invariant ν using the analysis of the parity of the wave functions at the time-reversal invariant momentum points. The calculated ν is shown to be 1, implying that arsenene is a topological insulator which can be a candidate material for nanoelectronic devices.

Arsenene monolayer as an outstanding anode material for (Li/Na/Mg)-ion batteries: density functional theory

Arsenene, a single-layer arsenic nanosheet with a honeycomb structure, has recently attracted increasing attention due to its numerous exceptional properties.

Recent advancements in Pt-nanostructure-based electrocatalysts for the oxygen reduction reaction

A comprehensive evaluation of Pt-nanostructure-based electrocatalysts for the oxygen reduction reaction.

Electronic and optical properties of hydrogenated group-IV multilayer materials

Hydrogenated group-IV layered materials are semiconducting forms of silicene, germanene and stanene.

Probing the chirality-dependent elastic properties and crack propagation behavior of single and bilayer stanene

Mechanical properties of stanene, a promising quasi-two-dimensional honeycomb-like nanostructure of tin belonging to the family of 2D-Xenes (X = Si, Ge, Sn), have been investigated in this paper.

Stanene-hexagonal boron nitride heterobilayer: Structure and characterization of electronic property

The structural and electronic properties of stanene/hexagonal boron nitride (Sn/h-BN) heterobilayer with different stacking patterns are studied using first principle calculations within the framework of density functional theory. The electronic band structure of different stacking patterns shows a direct band gap of ~30 meV at Dirac point and at the Fermi energy level with a Fermi velocity of ~0.53 × 106 ms-1. Linear Dirac dispersion relation is nearly preserved and the calculated small effective mass in the order of 0.05mo suggests high carrier mobility. Density of states and space charge distribution of the considered heterobilayer structure near the conduction and the valence bands show unsaturated π orbitals of stanene. This indicates that electronic carriers are expected to transport only through the stanene layer, thereby leaving the h-BN layer to be a good choice as a substrate for the heterostructure. We have also explored the modulation of the obtained band gap by changing the interlayer spacing between h-BN and Sn layer and by applying tensile biaxial strain to the heterostructure. A small increase in the band gap is observed with the increasing percentage of strain. Our results suggest that, Sn/h-BN heterostructure can be a potential candidate for Sn-based nanoelectronics and spintronic applications.

Electronic and excitonic properties of two-dimensional and bulk InN crystals

Motivated by potential extensive applications in nanoelectronics devices, we calculate structural and optoelectronic properties of two-dimensional InN as well as its three-dimensional counterparts by using density functional theory.