Self-assembled Cubic Boron Nitride Nanodots

The Growth of Hexagonal Boron Nitride Quantum Dots on Polycrystalline Nickel Films by Plasma-Assisted Molecular Beam Epitaxy

In this report, quantum dots of hexagonal boron nitride (h-BN) were fabricated on the surface of polycrystalline Ni film at low growth temperatures (700, 750, and 800 °C) by plasma-assisted molecular beam epitaxy. Reflection high-energy electron diffraction could trace the surface condition during the growth and perform the formation of BN. The observation of surface morphology by scanning electron microscopy and atomic force microscopy showed the nanodots of BN on Ni films. The existence of crystal h-BN quantum dots was determined by the analysis of Raman spectra and Kevin probe force microscopy. The cathodoluminescence of h-BN quantum dots performed at the wavelength of 546 and 610 nm, attributed to the trapping centers involving impurities and vacancies. Moreover, the influence of temperatures for the substrate and boron source cell was also investigated in the report. When the k-cell temperature of boron and growth temperature of substrate increased, the emission intensity of cathodoluminescence spectra increased, indicating the better growth parameters for h-BN quantum dots.

Effect of coating on the color and surface hardness of the surface of dental ceramics

BACKGROUND

The aim of this study was to investigate whether boron nitride (BN) and BN-chromium (BN-Cr) coatings applied with the sputtering method would change the characteristics of hardness and discoloration of the ceramic veneer surface.

MATERIALS AND METHODS

In this experimental study, thirty disc-shaped cores (10 mm in diameter and 0.8 mm in thickness) were prepared. Three different ceramic systems, IPS Empress (E) (Ivoclar Vivadent, Schaan, Liechntenstein), IPS e.max Press (EP) (Ivoclar Vivadent, Schaan, Liechntenstein), and Turkom Cera (T) (Turcom-Ceramic SDN-BHD, Kuala Lumpur, Malaysia), were tested, each with n = 10. The specimens were divided into two subgroups (n = 5) according to the coating on the veneering ceramic: BN or BN-Cr. The Vickers hardness and color differences (ΔE) values were measured before and after coating. Surface analysis was performed with X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopic. The Wilcoxon signed-rank test was performed to compare hardness values. The Kruskal-Wallis test was performed to compare ΔE values among all groups. The post hoc tests was used after Kruskal-Wallis, with level of statistical significance set at P ≤ 0.05.

RESULTS

BN-Cr coating statistically significantly increased the hardness of all types of ceramics (P < 0.05). BN coating did not change the hardness statistically significantly (P > 0.05). The mean ΔE values indicated clinically noticeable (over the limit of 3.7) color change in all groups except for the EP-BN and T-BN groups.

CONCLUSION

Although BN-Cr coating in this thickness had a negative effect on color, it increased the hardness of the ceramics and could be useful in the palatal region.

Boron oxynitride two-colour fluorescent dots and their incorporation in a hybrid organic-inorganic film

Bottom-up synthesis of fluorescent boron-nitride based dots is a challenging task because an accurate design of the structure-properties relationship is, in general, difficult to achieve. Incorporation of the dots into a solid-state matrix is also another important target to develop light-emitting devices. Two-colour fluorescent boron oxynitride nanodots have been obtained by a bottom-up synthesis route and incorporated into a hybrid organic-inorganic film. A combination of different analytical techniques such as XPS, XRD, TEM, UV-Vis, TGA-DTA and fluorescence has been used to characterise the structure, composition and properties of the boron oxynitride dots. The presence of defects in the boron oxynitride structure is the source of the two-colour fluorescence. The BN dots thermal stability is limited to around 100 °C; higher temperatures induce condensation of the structure, which leads to a lower emission. Upon incorporation into a hybrid organic-inorganic film deposited by spin-coating, the boron oxynitride dots maintain their fluorescence and have shown to be highly compatible with the sol-gel chemistry.

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of highly oriented pyrolytic graphite at high substrate temperatures of ~1400 °C. The current paper will present data on the high-temperature PA-MBE growth of hBN layers using a high-efficiency radio-frequency (RF) nitrogen plasma source. Despite more than a three-fold increase in nitrogen flux with this new source, we saw no significant increase in the growth rates of the hBN layers, indicating that the growth rate of hBN layers is controlled by the boron arrival rate. The hBN thickness increases to 90 nm with decrease in the growth temperature to 1080 °C. However, the decrease in the MBE temperature led to a deterioration in the optical properties of the hBN. The optical absorption data indicates that an increase in the active nitrogen flux during the PA-MBE process improves the optical properties of hBN and suppresses defect related optical absorption in the energy range 5.0⁻5.5 eV.

Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers

Reliable and controllable synthesis of two-dimensional (2D) hexagonal boron nitride (h-BN) layers is highly desirable for their applications as 2D dielectric and wide bandgap semiconductors. In this work, we demonstrate that the dissolution of carbon into cobalt (Co) and nickel (Ni) substrates can facilitate the growth of h-BN and attain large-area 2D homogeneity. The morphology of the h-BN film can be controlled from 2D layer-plus-3D islands to homogeneous 2D few-layers by tuning the carbon interstitial concentration in the Co substrate through a carburization process prior to the h-BN growth step. Comprehensive characterizations were performed to evaluate structural, electrical, optical, and dielectric properties of these samples. Single-crystal h-BN flakes with an edge length of ∼600 μm were demonstrated on carburized Ni. An average breakdown electric field of 9 MV/cm was achieved for an as-grown continuous 3-layer h-BN on carburized Co. Density functional theory calculations reveal that the interstitial carbon atoms can increase the adsorption energy of B and N atoms on the Co(111) surface and decrease the diffusion activation energy and, in turn, promote the nucleation and growth of 2D h-BN.

Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures

We carried out a systematic study of hexagonal boron nitride/graphene (h-BN/G) heterostructure growth by introducing high incorporation of a carbon (C) source on a heated cobalt (Co) foil substrate followed by boron and nitrogen sources in a molecular beam epitaxy system. With the increase of C incorporation in Co, three distinct regions of h-BN/G heterostructures were observed from region (1) where the C saturation was not attained at the growth temperature (900 °C) and G was grown only by precipitation during the cooling process to form a 'G network' underneath the h-BN film; to region (2) where the Co substrate was just saturated by C atoms at the growth temperature and a part of G growth occurs isothermally to form G islands and another part by precipitation, resulting in a non-uniform h-BN/G film; and to region (3) where a continuous layered G structure was formed at the growth temperature and precipitated C atoms added additional G layers to the system, leading to a uniform h-BN/G film. It is also found that in all three h-BN/G heterostructure growth regions, a 3 h h-BN growth at 900 °C led to h-BN film with a thickness of 1-2 nm, regardless of the underneath G layers' thickness or morphology. Growth time and growth temperature effects have been also studied.