Effects of chemical alternation on damage accumulation in concentrated solid-solution alloys

Reduction of dislocation, mean free path, and migration barriers using high entropy alloy: insights from the atomistic study of irradiation damage of CoNiCrFeMn

High entropy alloy has attracted extensive attention in nuclear energy due to outstanding irradiation resistance, partially due to sluggish diffusion. The mechanism from a defect-generation perspective, however, has received much less attention. In this paper, the formation of dislocation loops, and migration of interstitials and vacancies in CoNiCrFeMn high entropy alloy under consecutive bombardments were studied by molecular dynamics simulations. Compared to pure Ni, less defects were produced in the CoNiCrFeMn. Only a few small dislocation loops were observed, and the length of dislocation was small. The dislocation loops in Ni matrix were obviously longer and so was the length of dislocation. The interstitial clusters had much smaller mean free path during migration in the CoNiCrFeMn. The mean free path of 10-interstitial clusters in CoNiCrFeMn was reduced over 40 times compared to that in pure Ni. In addition, CoNiCrFeMn had a smaller difference of migration energy between interstitial and vacancy, which increased the opportunity of recombination of defects, therefore, led to less defects and much fewer dislocation loops. Our results provide insights into the mechanism of irradiation resistance in the high entropy alloy and could be useful in material design for irradiation tolerance and accident tolerance materials in nuclear energy.

Enhanced surface bombardment resistance of the CoNiCrFeMn high entropy alloy under extreme irradiation flux

We have investigated the response of the high entropy alloy of CoNiCrFeMn to the bombardment under extreme irradiation flux by means of molecular dynamics simulations. Compared to pristine Ni single crystalline, the CoNiCrFeMn HEA had less point defects during a single primary knock-on atom process. The average depth of defects was shallower. For consecutive bombardments, the CoNiCrFeMn HEA demonstrated much higher surface irradiation resistance than pristine Ni. Under the irradiation flux of 5.59 × 10²⁷ n/(m^2*s), the number of defects in Ni gradually increased and was proportional to the number of bombardments, till the formation of dislocation which led to a boost of the defects. On the contrary, the number of defects in CoNiCrFeMn HEA was much less and stable, appearing to be insensitive to the number of bombardments and suggesting good radiation resistance. Such radiation resistance of CoNiCrFeMn HEA was attributed to the lattice distortion and sluggish diffusion of atoms, which could enhance the recombination of defects. Under the irradiation flux of 1.68 × 10²⁸ n/(m^2*s), the boost of the defects in Ni occurred at lower number of bombardments. In addition, under both the irradiation flux of 5.59 × 10²⁷ and 1.68 × 10²⁸ n/(m^2*s), CoNiCrFeMn HEA had a smaller number of point defects and the defects were well dispersed. Our results showed that compared with Ni matrix, CoNiCrFeMn HEA had higher surface bombardment tolerance. This study might be helpful in the design of first-wall materials under the extreme irradiation flux.