Probing the Gas-Phase Dynamics of Graphene Chemical Vapour Deposition using in-situ UV Absorption Spectroscopy

Silicon Radical-Induced CH4 Dissociation for Uniform Graphene Coating on Silica Surface

Due to the manufacturability of highly well-defined structures and wide-range versatility in its microstructure, SiO2 is an attractive template for synthesizing graphene frameworks with the desired pore structure. However, its intrinsic inertness constrains the graphene formation via methane chemical vapor deposition. This work overcomes this challenge by successfully achieving uniform graphene coating on a trimethylsilyl-modified SiO2 (denote TMS-MPS). Remarkably, the onset temperature for graphene growth dropped to 720 °C for the TMS-MPS, as compared to the 885 °C of the pristine SiO2. This is found to be mainly from the Si radicals formed from the decomposition of the surface TMS groups. Both experimental and computational results suggest a strong catalytic effect of the Si radicals on the CH4 dissociation. The surface engineering of SiO2 templates facilitates the synthesis of high-quality graphene sheets. As a result, the graphene-coated SiO2 composite exhibits a high electrical conductivity of 0.25 S cm-1. Moreover, the removal of the TMP-MPS template has released a graphene framework that replicates the parental TMS-MPS template on both micro- and nano- scales. This study provides tremendous insights into graphene growth chemistries as well as establishes a promising methodology for synthesizing graphene-based materials with pre-designed microstructures and porosity.

Growth and in situ characterization of 2D materials by chemical vapour deposition on liquid metal catalysts: a review

2D materials (2DMs) have now been established as unique and attractive alternatives to replace current technological materials in a number of applications. Chemical vapour deposition (CVD), is undoubtedly the most renowned technique for thin film synthesis and meets all requirements for automated large-scale production of 2DMs. Currently most CVD methods employ solid metal catalysts (SMCat) for the growth of 2DMs however their use has been found to induce structural defects such as wrinkles, fissures, and grain boundaries among others. On the other hand, liquid metal catalysts (LMCat), constitute a possible alternative for the production of defect-free 2DMs albeit with a small temperature penalty. This review is a comprehensive report of past attempts to employ LMCat for the production of 2DMs with emphasis on graphene growth. Special attention is paid to the underlying mechanisms that govern crystal growth and/or grain consolidation and film coverage. Finally, the advent of online metrology which is particularly effective for monitoring the chemical processes under LMCat conditions is also reviewed and certain directions for future development are drawn.

The role of gas-phase dynamics in interfacial phenomena during few-layer graphene growth through atmospheric pressure chemical vapour deposition

The complicated chemical vapour deposition (CVD) is currently the most viable method of producing graphene. Most studies have extensively focused on chemical aspects either through experiments or computational studies. However, gas-phase dynamics in CVD reportedly plays an important role in improving graphene quality. Given that mass transport is the rate-limiting step for graphene deposition in atmospheric-pressure CVD (APCVD), the interfacial phenomena at the gas-solid interface (i.e., the boundary layer) are a crucial controlling factor. Accordingly, only by understanding and controlling the boundary-layer thickness can uniform full-coverage graphene deposition be achieved. In this study, a simplified computational fluid dynamics analysis of APCVD was performed to investigate gas-phase dynamics during deposition. Boundary-layer thickness was also estimated through the development of a customised homogeneous gas model. Interfacial phenomena, particularly the boundary layer and mass transport within it, were studied. The effects of Reynolds number on these factors were explored and compared with experimentally obtained results of the characterised graphene deposit. We then discussed and elucidated the important relation of fluid dynamics to graphene growth through APCVD.