Direct observation of multiple rotational stacking faults coexisting in freestanding bilayer MoS2

Electrochemomechanical failure in layered oxide cathodes caused by rotational stacking faults

Electrochemomechanical degradation is one of the most common causes of capacity deterioration in high-energy-density cathodes, particularly intercalation-based layered oxides. Here we reveal the presence of rotational stacking faults (RSFs) in layered lithium transition-metal oxides, arising from specific stacking sequences at different angles, and demonstrate their critical role in determining structural/electrochemical stability. Our combined experiments and calculations show that RSFs facilitate oxygen dimerization and transition-metal migration in layered oxides, fostering microcrack nucleation/propagation concurrently with cumulative electrochemomechanical degradation on cycling. We further show that thermal defect annihilation as a potential solution can suppress RSFs, reducing microcracks and enhancing cyclability in lithium-rich layered cathodes. The common but previously overlooked occurrence of RSFs suggests a new synthesis guideline of high-energy-density layered oxide cathodes.

Stacking Faults Enabled Second Harmonic Generation in Centrosymmetric van der Waals RhI3

Second harmonic generation (SHG) in van der Waals (vdW) materials has garnered significant attention due to its potential for integrated nonlinear optical and optoelectronic applications. Stacking faults in vdW materials are a typical kind of planar defect that introduces a degree of freedom to modulate the crystal symmetry and resultant SHG response. However, the physical origin and tunability of stacking-fault-governed SHG in vdW materials remain unclear. Here, taking the intrinsically centrosymmetric vdW RhI3 as an example, we theoretically reveal the origin of stacking-fault-governed SHG response, where the SHG response comes from the energetically favorable AC̅ stacking fault of which the electrical transitions along the high-symmetry paths Γ-M and Γ-K in the Brillion zone play the dominant role at 810 nm. Such a stacking-fault-governed SHG response is further confirmed via structural characterizations and SHG measurements. Furthermore, by applying hydrostatic pressure on RhI3, the correlation between structural evolution and SHG response is revealed with SHG enhancement up to 6.9 times, where the decreased electronic transition energies and higher momentum matrix elements due to the stronger interlayer interactions upon compression magnify the SHG susceptibility. This study develops a promising foundation for nonlinear nano-optics applications through the strategic design of stacking faults.

Cycling-Induced Capacity Increase of Bulk and Artificially Layered LiTaO3 Anodes in Lithium-Ion Batteries

Tantalum-based oxide electrodes have recently drawn much attention as promising anode materials owing to their hybrid Li+ storage mechanism. However, the utilization of LiTaO3 electrode materials that can deliver a high theoretical capacity of 568 mAh g-1 has been neglected. Herein, we prepare a layered LiTaO3 electrode formed artificially by restacking LiTaO3 nanosheets using a facile synthesis method and investigate the Li+ storage performance of this electrode compared with its bulk counterpart. The designed artificially layered anode reaches specific capacities of 474, 290, and 201 mAh g-1, respectively, at 56 (>500 cycles), 280 (>1000 cycles), and 1120 mAg-1 (>2000 cycles) current densities. We also determine that the Li+ storage capacity of the layered LiTaO3 demonstrates a cycling-induced capacity increase after a certain number of cycles. Adopting various characterization techniques on LiTaO3 electrodes before and after electrochemical cycling, we attribute the origin of the cycling-induced improvement of the Li+ storage capacity in these electrodes to the amorphization of the electrode after cycling, formation of metallic tantalum during the partially irreversible conversion mechanism, lower activation overpotential of electrodes due to the formation of Li-rich species by the lithium insertion mechanism, and finally the intrinsic piezoelectric behavior of LiTaO3 that can regulate Li+ diffusion kinetics.

Moiré Superlattice Structure in Two-Dimensional Catalysts: Synthesis, Property and Activity

Two-dimensional (2D) layered materials have been widely used as catalysts due to their high specific surface area, large fraction of uncoordinated surface atoms, and high charge carrier mobility. Moiré superlattice emerges in 2D layered materials with twist angle or lattice mismatch. By manipulating the moiré superlattice structure, 2D layered materials present modulated electronic band structure, topological edge states, and unconventional superconductivity which are tightly associated with the performance of catalysts. Hence, engineering moiré superlattice structures are proposed to be an important technology in modifying 2D layered materials for improved catalytic properties. However, currently, the investigation of moiré superlattice structure in a catalytic application is still in its infancy. This perspective starts with the discussion of structural features and fabrication strategy of 2D materials with moiré superlattice structure. Afterward, the catalytic applications, including electrocatalytic and photocatalytic applications, are summarized. In particular, the promotion mechanism of the catalytic performance caused by the moiré superlattice structure is proposed. Finally, the perspective is concluded by outlining the remaining challenges and possible solutions for the future development of 2D materials with moiré superlattice structure towards the catalytic applications.

WS2 moiré superlattices derived from mechanical flexibility for hydrogen evolution reaction

The discovery of moiré superlattices (MSLs) opened an era in the research of ‘twistronics’. Engineering MSLs and realizing unique emergent properties are key challenges. Herein, we demonstrate an effective synthetic strategy to fabricate MSLs based on mechanical flexibility of WS₂ nanobelts by a facile one-step hydrothermal method. Unlike previous MSLs typically created through stacking monolayers together with complicated method, WS₂ MSLs reported here could be obtained directly during synthesis of nanobelts driven by the mechanical instability. Emergent properties are found including superior conductivity, special superaerophobicity and superhydrophilicity, and strongly enhanced electro-catalytic activity when we apply ‘twistronics’ to the field of catalytic hydrogen production. Theoretical calculations show that such excellent catalytic performance could be attributed to a closer to thermoneutral hydrogen adsorption free energy value of twisted bilayers active sites. Our findings provide an exciting opportunity to design advanced WS₂ catalysts through moiré superlattice engineering based on mechanical flexibility.

Expanding the available materials with moiré superlattices is interesting but also challenging. Here the authors use a one-step hydrothermal approach to synthesis WS₂ moiré superlattices with high catalytic activity for hydrogen evolution reaction

One-step H2S reactive sputtering for 2D MoS2/Si heterojunction photodetector

A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H₂S gas molecules and sequential in situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS₂ and then applied to a 2D MoS₂/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H₂S MoS₂ film were performed, indicating that the stoichiometry and quality of the as-deposited MoS₂ can be further improved compared with the Ar-only MoS₂ sputtering method. For example, Ar/H₂S MoS₂ photodiode has lower defect densities than that of Ar MoS₂. We also determined that the factors affecting photodetector performance can be optimised in the 8-12 nm deposited thickness range.

Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials

Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS₂ or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.

Atomic scale study for the structural transformation of single layered MoS2

The structural transformation of single and few layered molybdenum disulfide (MoS₂) from 2H to 1T phase was studied at the atomic scale.

Twisted MX2/MoS2 heterobilayers: effect of van der Waals interaction on the electronic structure

A comprehensive first-principles study of the electronic properties of twisted 2D transition metal dichalcogenide (TMDC) heterobilayers MX₂/MoS₂ (M = Mo, Cr, W; X = S, Se) with different rotation angles has been performed. The van der Waals (vdW) interaction is found to have an important effect on the electronic structure of two-dimensional (2D) TMDC heterobilayers. Compared to non-twisted heterobilayers, the interlayer distance of twisted heterobilayers increases appreciably, thereby changing the vdW interaction of the heterobilayers as well as the electronic structure of the MX₂/MoS₂ systems. As a result, for CrSe₂/MoS₂ and MoSe₂/MoS₂ systems, the indirect bandgap (Γ-K) exhibits a notable enlargement (about 0.1 eV), leading to the indirect-to-direct gap transition. At twisting angles between 13.2° and 46.8°, the interlayer distance is nearly constant for the mismatched lattices over the entire sample, resulting in nearly the same electronic structure. Even after considering the spin-orbit coupling (SOC) effect, the indirect-to-direct transition is still predicted to occur in the WS₂/MoS₂ heterobilayer due to the large spin-orbit splitting.