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Eum D, Park SO, Jang HY, Jeon Y, Song JH, Han S, Kim K, Kang K. Electrochemomechanical failure in layered oxide cathodes caused by rotational stacking faults. NATURE MATERIALS 2024; 23:1093-1099. [PMID: 38702413 DOI: 10.1038/s41563-024-01899-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2023] [Accepted: 04/12/2024] [Indexed: 05/06/2024]
Abstract
Electrochemomechanical degradation is one of the most common causes of capacity deterioration in high-energy-density cathodes, particularly intercalation-based layered oxides. Here we reveal the presence of rotational stacking faults (RSFs) in layered lithium transition-metal oxides, arising from specific stacking sequences at different angles, and demonstrate their critical role in determining structural/electrochemical stability. Our combined experiments and calculations show that RSFs facilitate oxygen dimerization and transition-metal migration in layered oxides, fostering microcrack nucleation/propagation concurrently with cumulative electrochemomechanical degradation on cycling. We further show that thermal defect annihilation as a potential solution can suppress RSFs, reducing microcracks and enhancing cyclability in lithium-rich layered cathodes. The common but previously overlooked occurrence of RSFs suggests a new synthesis guideline of high-energy-density layered oxide cathodes.
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Affiliation(s)
- Donggun Eum
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul National University, Seoul, Republic of Korea
- Department of Materials Science and Engineering, Stanford University, Stanford, CA, USA
| | - Sung-O Park
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
| | - Ho-Young Jang
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
| | - Youngjun Jeon
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
| | - Jun-Hyuk Song
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
| | - Sangwook Han
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
| | - Kyoungoh Kim
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea
| | - Kisuk Kang
- Department of Materials Science and Engineering, Institute for Rechargeable Battery Innovations, Research Institute of Advanced Materials, Seoul National University, Seoul, Republic of Korea.
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul National University, Seoul, Republic of Korea.
- Institute of Engineering Research, College of Engineering, Seoul National University, Seoul, Republic of Korea.
- School of Chemical and Biological Engineering, College of Engineering, Seoul National University, Seoul, Republic of Korea.
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2
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Liu Y, He W, Wu B, Xuan F, Fang Y, Zhong Z, Fu J, Wang JP, Li Z, Wang J, Yao M, Huang F, Zhen L, Li Y, Xu CY. Stacking Faults Enabled Second Harmonic Generation in Centrosymmetric van der Waals RhI 3. ACS NANO 2024; 18:17053-17064. [PMID: 38870206 DOI: 10.1021/acsnano.4c03562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
Second harmonic generation (SHG) in van der Waals (vdW) materials has garnered significant attention due to its potential for integrated nonlinear optical and optoelectronic applications. Stacking faults in vdW materials are a typical kind of planar defect that introduces a degree of freedom to modulate the crystal symmetry and resultant SHG response. However, the physical origin and tunability of stacking-fault-governed SHG in vdW materials remain unclear. Here, taking the intrinsically centrosymmetric vdW RhI3 as an example, we theoretically reveal the origin of stacking-fault-governed SHG response, where the SHG response comes from the energetically favorable AC̅ stacking fault of which the electrical transitions along the high-symmetry paths Γ-M and Γ-K in the Brillion zone play the dominant role at 810 nm. Such a stacking-fault-governed SHG response is further confirmed via structural characterizations and SHG measurements. Furthermore, by applying hydrostatic pressure on RhI3, the correlation between structural evolution and SHG response is revealed with SHG enhancement up to 6.9 times, where the decreased electronic transition energies and higher momentum matrix elements due to the stronger interlayer interactions upon compression magnify the SHG susceptibility. This study develops a promising foundation for nonlinear nano-optics applications through the strategic design of stacking faults.
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Affiliation(s)
- Yue Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Wen He
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Bingze Wu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | | | - Yuqiang Fang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhengbo Zhong
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jierui Fu
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Jia-Peng Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Zhipeng Li
- School of Chemistry and Chemical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Jinzhong Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Mingguang Yao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
| | - Fuqiang Huang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
| | - Yang Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Cheng-Yan Xu
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, China
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Shirazi Amin A, Zhao W, Toloueinia P, Perera IP, Fee J, Su Y, Posada LF, Suib SL. Cycling-Induced Capacity Increase of Bulk and Artificially Layered LiTaO 3 Anodes in Lithium-Ion Batteries. ACS NANO 2023; 17:20203-20217. [PMID: 37797304 DOI: 10.1021/acsnano.3c05990] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/07/2023]
Abstract
Tantalum-based oxide electrodes have recently drawn much attention as promising anode materials owing to their hybrid Li+ storage mechanism. However, the utilization of LiTaO3 electrode materials that can deliver a high theoretical capacity of 568 mAh g-1 has been neglected. Herein, we prepare a layered LiTaO3 electrode formed artificially by restacking LiTaO3 nanosheets using a facile synthesis method and investigate the Li+ storage performance of this electrode compared with its bulk counterpart. The designed artificially layered anode reaches specific capacities of 474, 290, and 201 mAh g-1, respectively, at 56 (>500 cycles), 280 (>1000 cycles), and 1120 mAg-1 (>2000 cycles) current densities. We also determine that the Li+ storage capacity of the layered LiTaO3 demonstrates a cycling-induced capacity increase after a certain number of cycles. Adopting various characterization techniques on LiTaO3 electrodes before and after electrochemical cycling, we attribute the origin of the cycling-induced improvement of the Li+ storage capacity in these electrodes to the amorphization of the electrode after cycling, formation of metallic tantalum during the partially irreversible conversion mechanism, lower activation overpotential of electrodes due to the formation of Li-rich species by the lithium insertion mechanism, and finally the intrinsic piezoelectric behavior of LiTaO3 that can regulate Li+ diffusion kinetics.
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Affiliation(s)
- Alireza Shirazi Amin
- Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States
| | - Wen Zhao
- Department of Materials Science & Engineering, University of Connecticut, Storrs, Connecticut 06269-3136, United States
| | - Panteha Toloueinia
- Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States
| | - Inosh Prabasha Perera
- Department of Chemistry, University of Connecticut, Storrs, Connecticut 06269-3060, United States
| | - Jared Fee
- Department of Chemistry, University of Connecticut, Storrs, Connecticut 06269-3060, United States
| | - Yue Su
- Department of Chemistry, University of Connecticut, Storrs, Connecticut 06269-3060, United States
| | - Luisa F Posada
- Department of Materials Science & Engineering, University of Connecticut, Storrs, Connecticut 06269-3136, United States
| | - Steven L Suib
- Institute of Materials Science, University of Connecticut, Storrs, Connecticut 06269, United States
- Department of Chemistry, University of Connecticut, Storrs, Connecticut 06269-3060, United States
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Wang L, Yin S, Yang J, Dou SX. Moiré Superlattice Structure in Two-Dimensional Catalysts: Synthesis, Property and Activity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2300165. [PMID: 36974572 DOI: 10.1002/smll.202300165] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 03/02/2023] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) layered materials have been widely used as catalysts due to their high specific surface area, large fraction of uncoordinated surface atoms, and high charge carrier mobility. Moiré superlattice emerges in 2D layered materials with twist angle or lattice mismatch. By manipulating the moiré superlattice structure, 2D layered materials present modulated electronic band structure, topological edge states, and unconventional superconductivity which are tightly associated with the performance of catalysts. Hence, engineering moiré superlattice structures are proposed to be an important technology in modifying 2D layered materials for improved catalytic properties. However, currently, the investigation of moiré superlattice structure in a catalytic application is still in its infancy. This perspective starts with the discussion of structural features and fabrication strategy of 2D materials with moiré superlattice structure. Afterward, the catalytic applications, including electrocatalytic and photocatalytic applications, are summarized. In particular, the promotion mechanism of the catalytic performance caused by the moiré superlattice structure is proposed. Finally, the perspective is concluded by outlining the remaining challenges and possible solutions for the future development of 2D materials with moiré superlattice structure towards the catalytic applications.
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Affiliation(s)
- Li Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Sisi Yin
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Jianping Yang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Materials Science and Engineering, Donghua University, Shanghai, 201620, China
| | - Shi Xue Dou
- Institute for Superconducting and Electronic Materials (ISEM), Australian Institute for Innovative Materials (AIIM), University of Wollongong, Wollongong, NSW, 2500, Australia
- Institute of Energy Materials Science, University of Shanghai for Science and Technology, Shanghai, 200093, China
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5
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WS 2 moiré superlattices derived from mechanical flexibility for hydrogen evolution reaction. Nat Commun 2021; 12:5070. [PMID: 34417457 PMCID: PMC8379161 DOI: 10.1038/s41467-021-25381-1] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2021] [Accepted: 06/25/2021] [Indexed: 11/12/2022] Open
Abstract
The discovery of moiré superlattices (MSLs) opened an era in the research of ‘twistronics’. Engineering MSLs and realizing unique emergent properties are key challenges. Herein, we demonstrate an effective synthetic strategy to fabricate MSLs based on mechanical flexibility of WS2 nanobelts by a facile one-step hydrothermal method. Unlike previous MSLs typically created through stacking monolayers together with complicated method, WS2 MSLs reported here could be obtained directly during synthesis of nanobelts driven by the mechanical instability. Emergent properties are found including superior conductivity, special superaerophobicity and superhydrophilicity, and strongly enhanced electro-catalytic activity when we apply ‘twistronics’ to the field of catalytic hydrogen production. Theoretical calculations show that such excellent catalytic performance could be attributed to a closer to thermoneutral hydrogen adsorption free energy value of twisted bilayers active sites. Our findings provide an exciting opportunity to design advanced WS2 catalysts through moiré superlattice engineering based on mechanical flexibility. Expanding the available materials with moiré superlattices is interesting but also challenging. Here the authors use a one-step hydrothermal approach to synthesis WS2 moiré superlattices with high catalytic activity for hydrogen evolution reaction
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Cogal S, Ramani S, Bhethanabotla VR, Kuhn JN. Unravelling the Origin of Enhanced Electrochemical Performance in CoSe
2
−MoSe
2
Interfaces. ChemCatChem 2021. [DOI: 10.1002/cctc.202001844] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Sadik Cogal
- Chemical, Biological and Materials Engineering University of South Florida Tampa FL 33620 USA
- Present address: Department of Chemistry Burdur Mehmet Akif Ersoy University Burdur, 15030 Turkey
| | - Swetha Ramani
- Department of Chemistry University of South Florida Tampa FL 33620 USA
| | - Venkat R. Bhethanabotla
- Chemical, Biological and Materials Engineering University of South Florida Tampa FL 33620 USA
- Department of Chemistry University of South Florida Tampa FL 33620 USA
| | - John N. Kuhn
- Chemical, Biological and Materials Engineering University of South Florida Tampa FL 33620 USA
- Department of Chemistry University of South Florida Tampa FL 33620 USA
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7
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Jang HY, Nam JH, Yoon J, Kim Y, Park W, Cho B. One-step H 2S reactive sputtering for 2D MoS 2/Si heterojunction photodetector. NANOTECHNOLOGY 2020; 31:225205. [PMID: 32053801 DOI: 10.1088/1361-6528/ab7606] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
A technique for directly growing two-dimensional (2D) materials onto conventional semiconductor substrates, enabling high-throughput and large-area capability, is required to realise competitive 2D transition metal dichalcogenide devices. A reactive sputtering method based on H2S gas molecules and sequential in situ post-annealing treatment in the same chamber was proposed to compensate for the relatively deficient sulfur atoms in the sputtering of MoS2 and then applied to a 2D MoS2/p-Si heterojunction photodevice. X-ray photoelectron, Raman, and UV-visible spectroscopy analysis of the as-deposited Ar/H2S MoS2 film were performed, indicating that the stoichiometry and quality of the as-deposited MoS2 can be further improved compared with the Ar-only MoS2 sputtering method. For example, Ar/H2S MoS2 photodiode has lower defect densities than that of Ar MoS2. We also determined that the factors affecting photodetector performance can be optimised in the 8-12 nm deposited thickness range.
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Affiliation(s)
- Hye Yeon Jang
- Department of Advanced Material Engineering, Chungbuk National University, 1 Chungdae-ro, Seowon-gu, Cheongju, Chungbuk 28644, Republic of Korea
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8
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Mazza MF, Cabán-Acevedo M, Wiensch JD, Thompson AC, Lewis NS. Defect-Seeded Atomic Layer Deposition of Metal Oxides on the Basal Plane of 2D Layered Materials. NANO LETTERS 2020; 20:2632-2638. [PMID: 32208708 DOI: 10.1021/acs.nanolett.0c00179] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Atomic layer deposition (ALD) on mechanically exfoliated 2D layered materials spontaneously produces network patterns of metal oxide nanoparticles in triangular and linear deposits on the basal surface. The network patterns formed under a range of ALD conditions and were independent of the orientation of the substrate in the ALD reactor. The patterns were produced on MoS2 or HOPG when either tetrakis(dimethylamido)titanium or bis(ethylcyclopentadienyl)manganese were used as precursors, suggesting that the phenomenon is general for 2D materials. Transmission electron microscopy revealed the presence, prior to deposition, of dislocation networks along the basal plane of mechanically exfoliated 2D flakes, indicating that periodical basal plane defects related to disruptions in the van der Waals stacking of layers, such as perfect line dislocations and triangular extended stacking faults networks, introduce a surface reactivity landscape that leads to the emergence of patterned deposition.
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Affiliation(s)
- Michael F Mazza
- Division of Chemistry and Chemical Engineering, California Institute of Technology, 127-72, 210 Noyes Laboratory, Pasadena, California 91125, United States
| | - Miguel Cabán-Acevedo
- Division of Chemistry and Chemical Engineering, California Institute of Technology, 127-72, 210 Noyes Laboratory, Pasadena, California 91125, United States
| | - Joshua D Wiensch
- Division of Chemistry and Chemical Engineering, California Institute of Technology, 127-72, 210 Noyes Laboratory, Pasadena, California 91125, United States
| | - Annelise C Thompson
- Division of Chemistry and Chemical Engineering, California Institute of Technology, 127-72, 210 Noyes Laboratory, Pasadena, California 91125, United States
| | - Nathan S Lewis
- Division of Chemistry and Chemical Engineering, California Institute of Technology, 127-72, 210 Noyes Laboratory, Pasadena, California 91125, United States
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Dahanayake D, Gunasekara S, Jayaweera V, Sandaruwan C, Karunarathne V, Amaratunga GAJ. Atomic scale study for the structural transformation of single layered MoS2. CrystEngComm 2018. [DOI: 10.1039/c8ce01136b] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The structural transformation of single and few layered molybdenum disulfide (MoS2) from 2H to 1T phase was studied at the atomic scale.
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Affiliation(s)
- Damayanthi Dahanayake
- Sri Lanka Institute of Nanotechnology
- Homagama
- Sri Lanka
- Postgraduate Institute of Science
- University of Peradeniya
| | | | | | | | - Veranja Karunarathne
- Sri Lanka Institute of Nanotechnology
- Homagama
- Sri Lanka
- Department of Chemistry
- Faculty of Science
| | - Gehan A. J. Amaratunga
- Sri Lanka Institute of Nanotechnology
- Homagama
- Sri Lanka
- Electrical Engineering Division, Department of Engineering
- University of Cambridge
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Lu N, Guo H, Zhuo Z, Wang L, Wu X, Zeng XC. Twisted MX 2/MoS 2 heterobilayers: effect of van der Waals interaction on the electronic structure. NANOSCALE 2017; 9:19131-19138. [PMID: 29184949 DOI: 10.1039/c7nr07746g] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A comprehensive first-principles study of the electronic properties of twisted 2D transition metal dichalcogenide (TMDC) heterobilayers MX2/MoS2 (M = Mo, Cr, W; X = S, Se) with different rotation angles has been performed. The van der Waals (vdW) interaction is found to have an important effect on the electronic structure of two-dimensional (2D) TMDC heterobilayers. Compared to non-twisted heterobilayers, the interlayer distance of twisted heterobilayers increases appreciably, thereby changing the vdW interaction of the heterobilayers as well as the electronic structure of the MX2/MoS2 systems. As a result, for CrSe2/MoS2 and MoSe2/MoS2 systems, the indirect bandgap (Γ-K) exhibits a notable enlargement (about 0.1 eV), leading to the indirect-to-direct gap transition. At twisting angles between 13.2° and 46.8°, the interlayer distance is nearly constant for the mismatched lattices over the entire sample, resulting in nearly the same electronic structure. Even after considering the spin-orbit coupling (SOC) effect, the indirect-to-direct transition is still predicted to occur in the WS2/MoS2 heterobilayer due to the large spin-orbit splitting.
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Affiliation(s)
- Ning Lu
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Department of Physics, Anhui Normal University, Wuhu, Anhui 241000, China.
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