Non-sequential double ionization with near-single cycle laser pulses

Nonsequential double ionization of Ar in near-single-cycle laser pulses

Using the improved quantitative rescattering (QRS) model, we simulate the correlated two-electron momentum distributions (CMD) for nonsequential double ionization (NSDI) of Ar by near-single-cycle laser pulses with a wavelength of 750 nm at an intensity of 2.8 × 10¹⁴ W/cm². With the accurate cross sections obtained from fully quantum mechanical calculations for both electron impact excitation and electron impact ionization of Ar⁺, we unambiguously identify the contributions from recollision direct ionization (RDI) and recollision excitation with subsequent ionization (RESI). Our analysis reveals that RESI constitutes the main contribution to NSDI of Ar under the conditions considered here. The simulated results are directly compared with experimental measurements [Bergues et al., Nature Commun. 3, 813 (2012)] in which each NSDI event is tagged with the carrier-envelope phase (CEP). It is found that the overall pattern of both the CEP-resolved and the CEP-averaged CMDs measured in experiment are well reproduced by the QRS model, and the cross-shaped structure in the CEP-averaged CMD is attributed to the strong forward scattering of the recolliding electron as well as the depletion effect in tunneling ionization of the electron from an excited state of the parent ion.

Fingerprints of slingshot non-sequential double ionization on two-electron probability distributions

We study double ionization of He driven by near-single-cycle laser pulses at low intensities at 400 nm. Using a three-dimensional semiclassical model, we identify the pathways that prevail non-sequential double ionization (NSDI). We focus mostly on the delayed pathway, where one electron ionizes with a time-delay after recollision. We have recently shown that the mechanism that prevails the delayed pathway depends on intensity. For low intensities slingshot-NSDI is the dominant mechanism. Here, we identify the differences in two-electron probability distributions of the prevailing NSDI pathways. This allows us to identify properties of the two-electron escape and thus gain significant insight into slingshot-NSDI. Interestingly, we find that an observable fingerpint of slingshot-NSDI is the two electrons escaping with large and roughly equal energies.

Slingshot Nonsequential Double Ionization as a Gate to Anticorrelated Two-Electron Escape

At intensities below the recollision threshold, we show that recollision-induced excitation with one electron escaping fast after recollision and the other electron escaping with a time delay via a Coulomb slingshot motion is one of the most important mechanisms of nonsequential double ionization (NSDI), for strongly driven He at 400 nm. Slingshot NSDI is a general mechanism present for a wide range of low intensities and pulse durations. Anticorrelated two-electron escape is its striking hallmark. This mechanism offers an alternative explanation of anticorrelated two-electron escape obtained in previous studies.