Eshaghian Dorche A, Timuçin D, Thyagarajan K, Wunderer T, Johnson N, Schwartz D. Advanced dispersion engineering of a III-nitride micro-resonator for a blue frequency comb.
OPTICS EXPRESS 2020;
28:30542-30554. [PMID:
33115053 DOI:
10.1364/oe.399901]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2020] [Accepted: 09/10/2020] [Indexed: 06/11/2023]
Abstract
A systematic dispersion engineering approach is presented toward designing a III-nitride micro-resonator for a blue frequency comb. The motivation for this endeavor is to fill the need for compact, coherent, multi-wavelength photon sources that can be paired with, e.g., the 171Yb+ ion in a photonic integrated chip for optical sensing, time-keeping, and quantum computing applications. The challenge is to overcome the normal material dispersion exhibited by the otherwise ideal (i.e., low-loss and large-Kerr-coefficient) AlGaN family of materials, as this is a prerequisite for bright-soliton Kerr comb generation. The proposed approach exploits the avoided-crossing phenomenon in coupled waveguides to achieve strong anomalous dispersion in the desired wavelength range. The resulting designs reveal a wide range of dispersion response tunability, which is expected to allow access to the near-UV wavelength regime as well. Numerical simulations of the spatio-temporal evolution of the intra-cavity field under continuous-wave laser pumping confirm that such a structure is capable of generating a broadband blue bright-soliton Kerr frequency comb. The proposed micro-resonator heterostructure is amenable to the current state-of-the-art growth and fabrication methods for AlGaN semiconductors.
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