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Nowakowska P, Pavlosiuk O, Wiśniewski P, Kaczorowski D. Temperature-dependent Fermi surface probed by Shubnikov-de Haas oscillations in topological semimetal candidates DyBi and HoBi. Sci Rep 2023; 13:22776. [PMID: 38123605 PMCID: PMC10733278 DOI: 10.1038/s41598-023-49941-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Accepted: 12/13/2023] [Indexed: 12/23/2023] Open
Abstract
Rare earth-based monopnictides are among the most intensively studied groups of materials in which extremely large magnetoresistance has been observed. This study explores magnetotransport properties of two representatives of this group, DyBi and HoBi. The extreme magnetoresistance is discovered in DyBi and confirmed in HoBi. At [Formula: see text] K and in [Formula: see text] T for both compounds, magnetoresistance reaches the order of magnitude of [Formula: see text]. For both materials, standard Kohler's rule is obeyed only in the temperature range from 50 to 300 K. At lower temperatures, extended Kohler's rule has to be invoked because carrier concentrations and mobilities strongly change with temperature and magnetic field. This is further proven by the observation of a quite rare temperature-dependence of oscillation frequencies in Shubnikov-de Haas effect. Rate of this dependence clearly changes at Néel temperature, reminiscent of a novel magnetic band splitting. Multi-frequency character of the observed Shubnikov-de Haas oscillations points to the coexistence of electron- and hole-type Fermi pockets in both studied materials. Overall, our results highlight correlation of temperature dependence of the Fermi surface with the magnetotransport properties of DyBi and HoBi.
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Affiliation(s)
- Paulina Nowakowska
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422, Wrocław, Poland
| | - Orest Pavlosiuk
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422, Wrocław, Poland.
| | - Piotr Wiśniewski
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422, Wrocław, Poland
| | - Dariusz Kaczorowski
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Okólna 2, 50-422, Wrocław, Poland
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2
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Baidak ST, Lukoyanov AV. Semimetallic, Half-Metallic, Semiconducting, and Metallic States in Gd-Sb Compounds. Int J Mol Sci 2023; 24:ijms24108778. [PMID: 37240125 DOI: 10.3390/ijms24108778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Revised: 05/08/2023] [Accepted: 05/11/2023] [Indexed: 05/28/2023] Open
Abstract
The electronic and band structures of the Gd- and Sb-based intermetallic materials have been explored using the theoretical ab initio approach, accounting for strong electron correlations of the Gd-4f electrons. Some of these compounds are being actively investigated because of topological features in these quantum materials. Five compounds were investigated theoretically in this work to demonstrate the variety of electronic properties in the Gd-Sb-based family: GdSb, GdNiSb, Gd4Sb3, GdSbS2O, and GdSb2. The GdSb compound is a semimetal with the topological nonsymmetric electron pocket along the high-symmetry points Γ-X-W, and hole pockets along the L-Γ-X path. Our calculations show that the addition of nickel to the system results in the energy gap, and we obtained a semiconductor with indirect gap of 0.38 eV for the GdNiSb intermetallic compound. However, a quite different electronic structure has been found in the chemical composition Gd4Sb3; this compound is a half-metal with the energy gap of 0.67 eV only in the minority spin projection. The molecular GdSbS2O compound with S and O in it is found to be a semiconductor with a small indirect gap. The GdSb2 intermetallic compound is found to have a metallic state in the electronic structure; remarkably, the band structure of GdSb2 has a Dirac-cone-like feature near the Fermi energy between high-symmetry points Г and S, and these two Dirac cones are split by spin-orbit coupling. Thus, studying the electronic and band structure of several reported and new Gd-Sb compounds revealed a variety of the semimetallic, half-metallic, semiconducting, or metallic states, as well topological features in some of them. The latter can lead to outstanding transport and magnetic properties, such as a large magnetoresistance, which makes Gd-Sb-based materials very promising for applications.
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Affiliation(s)
- Semyon T Baidak
- Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia
- M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia
| | - Alexey V Lukoyanov
- Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia
- M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia
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3
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Karim AMMT, Jubair M, Nuruzzaman M, Zilani MAK. An ab initio Study on the Mechanical Stability, Spin-Dependent Electronic Properties, Molecular Orbital Predictions, and Optical Features of Antiperovskite A 3InN (A = Co, Ni). ACS OMEGA 2022; 7:13588-13603. [PMID: 35559198 PMCID: PMC9088782 DOI: 10.1021/acsomega.1c07039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Accepted: 03/31/2022] [Indexed: 06/15/2023]
Abstract
Structural, mechanical, spin-dependent electronic, magnetic, and optical properties of antiperovskite nitrides A3InN (A = Co, Ni) along with molecular orbital diagram are investigated here by using an ab initio density functional theory (DFT). The mechanical stability, deformation, damage tolerance and ductile nature of A3InN are confirmed from elastic calculations. Different mechanical anisotropy factors are also discussed in detail. The spin dependent electronic properties such as the band structure and density of states (DOS) of A3InN are studied and, the dispersion curves and DOS at Fermi level are different for up and down spins only in case of Co3InN. These calculations also suggest that Co3InN and Ni3InN behave as ferromagnetic and nonmagnetic, respectively. The induced total magnetic moment of Co3InN is found 2.735 μB/cell in our calculation. Mulliken bond population analysis shows that the atomic bonds of A3InN are contributed by both ionic and covalent bonds. Molecular orbital diagrams of A3InN antiperovskites are proposed by analyzing orbital projected band structures. The formation of a molecular orbital energy diagram for Co3InN is similar to Ni3InN with respect to hybridization and orbital sequencing. However, the orbital positions with respect to the Fermi level (E F) and separations between them are different. The Fermi surface of A3InN is composed of multiple nonspherical electron and hole type sheets in which Co3InN displays a spin-dependent Fermi surface. The various ground-state optical functions such as real and imaginary parts of the dielectric constant, optical conductivity, reflectivity, refractive index, absorption coefficient, and loss function of A3InN are studied with implications. The reflectivity spectra reveal that A3InN reflects >45% of incident electromagnetic radiations in both the visible and ultraviolet region, which is an ideal feature of coating material for avoiding solar heating.
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Affiliation(s)
- Al Momin Md Tanveer Karim
- Institute
for Superconducting and Electronic Materials, AIIM, University of Wollongong, Wollongong, NSW 2500, Australia
- Department
of Physics, Rajshahi University of Engineering
& Technology, Rajshahi 6204, Bangladesh
| | - Md Jubair
- Department
of Physics, Rajshahi University of Engineering
& Technology, Rajshahi 6204, Bangladesh
| | - Md Nuruzzaman
- Department
of Physics, Rajshahi University of Engineering
& Technology, Rajshahi 6204, Bangladesh
| | - Md Abdul Kader Zilani
- Department
of Physics, Rajshahi University of Engineering
& Technology, Rajshahi 6204, Bangladesh
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Mukhopadhyay A, Singh K, Sen S, Mukherjee K, Nayak AK, Mohapatra N. Anomalous magnetoresistance and magneto-thermal properties of the half-Heuslers, RPdSi ( R=Y, Gd-Er). JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:435804. [PMID: 34320469 DOI: 10.1088/1361-648x/ac1880] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2021] [Accepted: 07/28/2021] [Indexed: 06/13/2023]
Abstract
Here, we present a detailed study on the magnetic, magneto-transport, and magneto-thermal properties of the equiatomic half-Heusler compounds with the general formula,RPdSi (R= Y and rare-earth, Gd-Er). These materials crystallize in two different superstructures of the TiNiSi-type orthorhombic unit cell with the space groupsPnmaandPmmn. Our magnetic and heat capacity measurements reveal the onset of an antiferromagnetic (AFM) ordering in the temperature range 3-16 K for all the local moments bearingRPdSi compounds, while the non-magnetic analog, YPdSi exhibits a Pauli-paramagnetic behaviour. The AFM state of these compounds can be tuned by magnetic field and temperature as demonstrated by the magnetic measurements below the Neel temperature (TN). Most importantly, this tuning of the magnetic structure is well documented in the complex temperature and field dependence of magnetoresistance (MR) and magnetocaloric effect (MCE). Our study establishes a striking correlation of the commensurate/incommensurate AFM structure with that of positive/negative MR and MCE in this series of compounds. We emphasize that such a framework applies to a large number of AFM intermetallic systems.
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Affiliation(s)
- A Mukhopadhyay
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, 752050, Odisha, India
| | - Karan Singh
- School of Basic Sciences, Indian Institute of Technology Mandi, 175005, Himachal Pradesh, India
| | - Subir Sen
- School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni-752050, India
| | - K Mukherjee
- School of Basic Sciences, Indian Institute of Technology Mandi, 175005, Himachal Pradesh, India
| | - A K Nayak
- School of Physical Sciences, National Institute of Science Education and Research, HBNI, Jatni-752050, India
| | - N Mohapatra
- School of Basic Sciences, Indian Institute of Technology Bhubaneswar, 752050, Odisha, India
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Denisov KS, Baryshnikov KA, Alekseev PS, Averkiev NS. Anisotropic magnetoresistance and memory effect in bulk systems with extended defects. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:385802. [PMID: 34198268 DOI: 10.1088/1361-648x/ac1091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2021] [Accepted: 07/01/2021] [Indexed: 06/13/2023]
Abstract
To describe kinetic phenomena in disordered conductors, various acts of scattering of electrons can be often considered as independent, that is captured by the Boltzmann equation. However, in some regimes, especially, in a magnetic field, it becomes necessary to take into account the correlations between different scattering events of electrons on defects at different times in the past. Such memory effects can have a profound impact on the resistivity of 2D semiconductor systems, resulting in giant negative magnetoresistance and microwave-induced resistance oscillations phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured by the presence of extended one-dimensional defects, such as screw dislocations or static charge stripes. We demonstrate that accounting for the memory effect, that is the capture of electrons on collisionless spiral trajectories winding around extended defects, leads to the strong negative magnetoresistance in case when the external magnetic field direction becomes parallel to the defects axis. This effect gives rise to a significant magnetoresistance anisotropy already for an isotropic Fermi surface and no spin-orbit effects. The proposed resistivity feature can be used to detect one-dimensional scattering defects in these systems.
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Affiliation(s)
- K S Denisov
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia
| | - K A Baryshnikov
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia
| | - P S Alekseev
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia
| | - N S Averkiev
- Ioffe Institute, 26 Politekhnicheskaya, St Petersburg 194021, Russia
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Chatterjee S, Khalid S, Inbar HS, Goswami A, Guo T, Chang YH, Young E, Fedorov AV, Read D, Janotti A, Palmstrøm CJ. Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy. SCIENCE ADVANCES 2021; 7:7/16/eabe8971. [PMID: 33853778 PMCID: PMC8046380 DOI: 10.1126/sciadv.abe8971] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2020] [Accepted: 02/25/2021] [Indexed: 06/12/2023]
Abstract
Controlling electronic properties via band structure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, using LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, nonsaturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a two-dimensional, interfacial hole gas. This is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultrathin limit. Our work lays out a general strategy of using confined thin-film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously provides insights into its origin.
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Affiliation(s)
- Shouvik Chatterjee
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005, India
| | - Shoaib Khalid
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA
- Department of Physics and Astronomy, University of Delaware, Newark, DE 19716, USA
| | - Hadass S Inbar
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - Aranya Goswami
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
| | - Taozhi Guo
- Department of Physics, University of California, Santa Barbara, CA 93106, USA
| | - Yu-Hao Chang
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - Elliot Young
- Materials Department, University of California, Santa Barbara, CA 93106, USA
| | - Alexei V Fedorov
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Dan Read
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA
- School of Physics and Astronomy, Cardiff University, Cardiff CF24 3AA, UK
| | - Anderson Janotti
- Department of Materials Science and Engineering, University of Delaware, Newark, DE 19716, USA.
| | - Chris J Palmstrøm
- Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA.
- Materials Department, University of California, Santa Barbara, CA 93106, USA
- California NanoSystems Institute, University of California, Santa Barbara, CA 93106, USA
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7
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Observation of gapped state in rare-earth monopnictide HoSb. Sci Rep 2020; 10:12961. [PMID: 32737330 PMCID: PMC7395779 DOI: 10.1038/s41598-020-69414-z] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/06/2020] [Accepted: 07/08/2020] [Indexed: 11/12/2022] Open
Abstract
The rare-earth monopnictide family is attracting an intense current interest driven by its unusual extreme magnetoresistance (XMR) property and the potential presence of topologically non-trivial surface states. The experimental observation of non-trivial surface states in this family of materials are not ubiquitous. Here, using high-resolution angle-resolved photoemission spectroscopy, magnetotransport, and parallel first-principles modeling, we examine the nature of electronic states in HoSb. Although we find the presence of bulk band gaps at the \documentclass[12pt]{minimal}
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\begin{document}$$\Gamma$$\end{document}Γ and X-symmetry points of the Brillouin zone, we do not find these gaps to exhibit band inversion so that HoSb does not host a Dirac semimetal state. Our magnetotransport measurements indicate that HoSb can be characterized as a correlated nearly-complete electron-hole-compensated semimetal. Our analysis reveals that the nearly perfect electron-hole compensation could drive the appearance of non-saturating XMR effect in HoSb.
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Ban WJ, Wu DS, Xu B, Luo JL, Xiao H. Revealing 'plasmaron' feature in DySb by optical spectroscopy study. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:405701. [PMID: 31242466 DOI: 10.1088/1361-648x/ab2d1a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We report magnetic susceptibility, resistivity and optical spectroscopy study on single crystal sample DySb. It exhibits extremely large magnetoresistance (XMR), and a magnetic phase transition from paramagnetic (PM) to antiferromagnetic (AFM) state at about 10 K. A 'screened' plasma edge at about 4000 cm-1 is revealed by optical measurement, which suggests that the material has a low carrier density. With decreasing temperature, the 'screened' plasma edge shows a blue shift, possibly due to a decrease of the effective mass of carriers. Notably, an anomalous temperature dependent midinfrared absorption feature is observed in the vicinity of the 'screened' plasma edge. In addition, it can be connected to the inflection point in the real part of the dielectric function [Formula: see text], the frequency of which exactly tracks the temperature dependent 'screened' plasma frequency. This phenomena can be explained by the appearance of a coupled electron-plasmon 'plasmaron' feature.
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Affiliation(s)
- W J Ban
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, People's Republic of China
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Pavlosiuk O, Kaczorowski D. Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe 2. Sci Rep 2018; 8:11297. [PMID: 30050089 PMCID: PMC6062631 DOI: 10.1038/s41598-018-29545-w] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2018] [Accepted: 07/09/2018] [Indexed: 11/09/2022] Open
Abstract
Platinum ditelluride has recently been characterized, based on angle-resolved photoemission spectroscopy data and electronic band structure calculations, as a possible representative of type-II Dirac semimetals. Here, we report on the magnetotransport behavior (electrical resistivity, Hall effect) in this compound, investigated on high-quality single-crystalline specimens. The magnetoresistance (MR) of PtTe2 is large (over 3000% at T = 1.8 K in B = 9 T) and unsaturated in strong fields in the entire temperature range studied. The MR isotherms obey a Kohler’s type scaling with the exponent m = 1.69, different from the case of ideal electron-hole compensation. In applied magnetic fields, the resistivity shows a low-temperature plateau, characteristic of topological semimetals. In strong fields, well-resolved Shubnikov – de Haas (SdH) oscillations with two principle frequencies were found, and their analysis yielded charge mobilities of the order of 103 cm2 V−1 s−1 and rather small effective masses of charge carriers, 0.11 me and 0.21 me. However, the extracted Berry phases point to trivial character of the electronic bands involved in the SdH oscillations. The Hall effect data corroborated a multi-band character of the electrical conductivity in PtTe2, with moderate charge compensation.
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Affiliation(s)
- Orest Pavlosiuk
- Institute of Low Temperature and Structure Research, Polish Academy of Sciences, P. O. Box 1410, 50-950 Wrocław, Poland
| | - Dariusz Kaczorowski
- Institute of Molecular Physics, Polish Academy of Sciences, Mariana Smoluchowskiego 17, 60-179, Poznań, Poland.
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Dey U. Comparative study of the compensated semi-metals LaBi and LuBi: a first-principles approach. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018; 30:205501. [PMID: 29624183 DOI: 10.1088/1361-648x/aabc3d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
We have investigated the electronic structures of LaBi and LuBi, employing the full-potential all electron method as implemented in Wien2k. Using this, we have studied in detail both the bulk and the surface states of these materials. From our band structure calculations we find that LuBi, like LaBi, is a compensated semi-metal with almost equal and sizable electron and hole pockets. In analogy with experimental evidence in LaBi, we thus predict that LuBi will also be a candidate for extremely large magneto-resistance (XMR), which should be of immense technological interest. Our calculations reveal that LaBi, despite being gapless in the bulk spectrum, displays the characteristic features of a [Formula: see text] topological semi-metal, resulting in gapless Dirac cones on the surface, whereas LuBi only shows avoided band inversion in the bulk and is thus a conventional compensated semi-metal with extremely large magneto-resistance.
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Affiliation(s)
- Urmimala Dey
- Centre for Theoretical Studies, Indian Institute of Technology Kharagpur, Kharagpur-721302, India
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