1
|
Cao D, Cao J. Enhanced thermoelectric performance of Hf-doped ZrNiSn: a first principle study. J Mol Model 2024; 30:308. [PMID: 39138738 DOI: 10.1007/s00894-024-06102-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/13/2024] [Accepted: 08/02/2024] [Indexed: 08/15/2024]
Abstract
CONTEXT AND RESULTS In this work, we perform a systematic study on the thermoelectric properties of Zr1-xNiSnHfx using first-principles calculations combined with Boltzmann transport equations. The power factor of Zr1-xNiSnHfx increases as the temperature increases from 300 to 1200 K, because the increase in electrical conductivity is greater than the decrease in the Seebeck coefficient. The power factor of Zr7/8NiSnHf1/8 is larger than that of other Zr1-xNiSnHfx thermoelectric materials, but the thermoelectric figure of merit (ZT) is similar to that of others materials. This is due to the higher electronic thermal conductivity of Zr7/8NiSnHf1/8 compared to other materials. The maximum ZT of p-type (n-type) Zr1-xNiSnHfx is 0.98 (0.97), 0.9 (0.89), 0.83 (0.80), and 0.72 (0.73) at 300 K, 600 K, 900 K, and 1200 K, respectively, which are greater than those of the pure ZrNiSn. In conclusion, Hf-doped ZrNiSn can enhance the thermoelectric performance and are promising candidates for thermoelectric materials. COMPUTATIONAL METHOD This paper uses FP-LAPW implemented in the WIEN2K code. The thermoelectric performance is calculated based on the semi-classical Boltzmann theory implanted using the BoltzTraP code. The electronic thermal conductivity (κe) and the carrier concentration (n) have been calculated using the density functional theory.
Collapse
Affiliation(s)
- Di Cao
- School of Earth Science and Resources, Chang'an University, Xi'an, 710054, China
- School of Geological Engineering and Geomatics, Chang'an University, Xi'an, 710054, China
| | - Jiannong Cao
- School of Earth Science and Resources, Chang'an University, Xi'an, 710054, China.
- School of Geological Engineering and Geomatics, Chang'an University, Xi'an, 710054, China.
| |
Collapse
|
2
|
Ascrizzi E, Ribaldone C, Casassa S. Crucial Role of Ni Point Defects and Sb Doping for Tailoring the Thermoelectric Properties of ZrNiSn Half-Heusler Alloy: An Ab Initio Study. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1061. [PMID: 38473533 PMCID: PMC10935130 DOI: 10.3390/ma17051061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2023] [Revised: 02/15/2024] [Accepted: 02/21/2024] [Indexed: 03/14/2024]
Abstract
In the wide group of thermoelectric compounds, the half-Heusler ZrNiSn alloy is one of the most promising materials thanks to its thermal stability and narrow band gap, which open it to the possibility of mid-temperature applications. A large variety of defects and doping can be introduced in the ZrNiSn crystalline structure, thus allowing researchers to tune the electronic band structure and enhance the thermoelectric performance. Within this picture, theoretical studies of the electronic properties of perfect and defective ZrNiSn structures can help with the comprehension of the relation between the topology of defects and the thermoelectric features. In this work, a half-Heusler ZrNiSn alloy is studied using different defective models by means of an accurate Density Functional Theory supercell approach. In particular, we decided to model the most common defects related to Ni, which are certainly present in the experimental samples, i.e., interstitial and antisite Ni and a substitutional defect consisting of the replacement of Sn with Sb atoms using concentrations of 3% and 6%. First of all, a comprehensive characterization of the one-electron properties is performed in order to gain deeper insight into the relationship between structural, topological and electronic properties. Then, the effects of the modeled defects on the band structure are analyzed, with particular attention paid to the region between the valence and the conduction bands, where the defective models introduce in-gap states with respect to the perfect ZrNiSn crystal. Finally, the electronic transport properties of perfect and defective structures are computed using semi-classical approximation in the framework of the Boltzmann transport theory as implemented in the Crystal code. The dependence obtained of the Seebeck coefficient and the power factor on the temperature and the carrier concentration shows reasonable agreement with respect to the experimental counterpart, allowing possible rationalization of the effect of the modeled defects on the thermoelectric performance of the synthesized samples. As a general conclusion, defect-free ZrNiSn crystal appears to be the best candidate for thermoelectric applications when compared to interstitial and antisite Ni defective models, and substitutional defects of Sn with Sb atoms (using concentrations of 3% and 6%) do not appreciably improve electronic transport properties.
Collapse
Affiliation(s)
| | | | - Silvia Casassa
- Department of Chemistry, University of Torino, Via Giuria 5, 10125 Torino, Italy; (E.A.); (C.R.)
| |
Collapse
|
3
|
Zhang J, Zhong S, Ke SH. Enhanced thermoelectric performance in Sb-Br codoped Bi 2Se 3 with complex electronic structure and chemical bond softening. RSC Adv 2022; 12:1653-1662. [PMID: 35425166 PMCID: PMC8978978 DOI: 10.1039/d1ra08726f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Accepted: 12/29/2021] [Indexed: 11/21/2022] Open
Abstract
Prior experimental work showed that Bi2Se3, as a sister compound of the best room-temperature thermoelectric material Bi2Te3, has remarkably improved thermoelectric performance by Sb-Br codoping. But the relationship between its crystalline structure and thermoelectric properties is still unclear to date. Here, we use first-principles calculations to explore the possible reasons for such improvement. The electronic structures of Bi2-x Sb x (Se1-y Br y )3 (x = 0, 1, 2; y = 0, 0.08) are systematically investigated. Significant effects of 8% Br codoping in BiSbSe3 are found. First, the Br atom acts as an electron donor, thus greatly increasing the carrier concentration. Second, similar to the effect of Sb doping, Br codoping further improves greatly the degeneracy of the conduction band edge, which leads to a remarkably increased density-of-states effective mass without deterioration of the carrier mobility, and simultaneously preserves a large Seebeck coefficient of ∼-254 μV K-1 at 800 K. In addition, the Br codoping softens the chemical bonds, which enhances anharmonic scattering and further reduces the lattice thermal conductivity. We predict that the maximum zT of BiSb(Se0.92Br0.08)3 at 800 K can reach 0.96 with the carrier concentration of 9.22 × 1019 cm-3. This study rationalizes a potential strategy to improve the thermoelectric performance of Bi2Se3-based thermoelectric materials.
Collapse
Affiliation(s)
- Ju Zhang
- MOE Key Laboratory of Microstructured Materials, School of Physics Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 China
| | - Shiqi Zhong
- MOE Key Laboratory of Microstructured Materials, School of Physics Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 China
| | - San-Huang Ke
- MOE Key Laboratory of Microstructured Materials, School of Physics Science and Engineering, Tongji University 1239 Siping Road Shanghai 200092 China
| |
Collapse
|
4
|
Yang X, Jiang Z, Kang H, Chen Z, Guo E, Liu D, Yang F, Li R, Jiang X, Wang T. Enhanced Thermoelectric Performance of Zr 1-xTa xNiSn Half-Heusler Alloys by Diagonal-Rule Doping. ACS APPLIED MATERIALS & INTERFACES 2020; 12:3773-3783. [PMID: 31880427 DOI: 10.1021/acsami.9b21517] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Although Sb doping is regarded as the most effective method to regulate the carrier concentration within the optimum range for ZrNiSn-based half-Heusler (HH) alloys, the resulting thermal conductivity remains high. Hence, the aim of this study was to investigate the effect of "diagonal-rule" doping; that is, the Zr site was displaced by Ta, which can simultaneously enhance the electrical conductivity and reduce the lattice thermal conductivity. The solid-solubility limit of Ta in the ZrNiSn matrix was determined to be x = 0.04. The highest ZT, 0.72, was achieved at 923 K for Zr0.98Ta0.02NiSn. In addition, ZTavg increased by 10.2% for Zr0.98Ta0.02NiSn compared with that for ZrNiSn0.99Sb0.01 at 873 K, which was mainly attributed to the reduced lattice thermal conductivity of Zr0.98Ta0.02NiSn. These results suggest that Ta doping is more effective than Sb doping in ZrNiSn-based HH alloys. In addition, the microhardness of Zr1-xTaxNiSn was substantially improved with increasing Ta content and was also much higher than that of other traditional thermoelectric materials.
Collapse
Affiliation(s)
- Xiong Yang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Zhou Jiang
- Key Laboratory of Materials Modification by Laser , Ion and Electron Beams (Dalian University of Technology), Ministry of Education , Dalian 116024 , China
| | - Huijun Kang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Zongning Chen
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Enyu Guo
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Daquan Liu
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Fenfen Yang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Rengeng Li
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| | - Xue Jiang
- Key Laboratory of Materials Modification by Laser , Ion and Electron Beams (Dalian University of Technology), Ministry of Education , Dalian 116024 , China
| | - Tongmin Wang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering , Dalian University of Technology , Dalian 116024 , China
| |
Collapse
|
5
|
García G, Palacios P, Cabot A, Wahnón P. Thermoelectric Properties of Doped-Cu 3SbSe 4 Compounds: A First-Principles Insight. Inorg Chem 2018; 57:7321-7333. [PMID: 29851475 DOI: 10.1021/acs.inorgchem.8b00980] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
This work reports the first systematic study of the effects of substitutional doping on the transport properties and electronic structure of Cu3SbSe4. To this end, the electronic structures and thermoelectric parameters of Cu3SbSe4 and Cu3Sb1- xM xSe4 (M = Al, Ga, In, Tl, Si, Ge, Sn, Pb, P, As, Bi) were systematically investigated by using density functional theory and the Boltzmann semiclassical transport theory. Substitutional doping at Sb site with IIIA (M = Al, Ga, In, Tl) and IVA (M = Si, Ge, Sn, Pb) elements considerably increases the hole carrier concentration and consequently the electrical conductivity, while doping with M = Bi would be adequate to provide high S values. Changes in calculated thermoelectric parameters are explained based on the effects of the dopant element on the electronic band structure near the Fermi level. We also present an extensive comparison between thermoelectric parameters here calculated and available experimental data. Our results allow us to infer significant insights into the search for new materials with improved thermoelectric performance by modifying the electronic structure through substitutional doping.
Collapse
Affiliation(s)
| | - Pablo Palacios
- Departamento de Física aplicada a las Ingenierías Aeronáutica y Naval. ETSI Aeronáutica y del Espacio , Universidad Politécnica de Madrid , Pz. Cardenal Cisneros, 3 , 28040 Madrid , Spain
| | - Andreu Cabot
- Catalonia Institute for Energy Research , 08930 Sant Adrià de Besós, Barcelona , Spain.,ICREA , Pg. Lluis Companys, 23 , 08010 Barcelona , Spain
| | | |
Collapse
|