High-injection effects in near-field thermophotovoltaic devices

New insights into the thermal behavior and management of thermophotovoltaic systems

The thermal behavior of a thermophotovoltaic system composed of a metallo-dielectric spectrally selective radiator at high temperature and a GaSb photovoltaic cell in the far field is investigated. Using a coupled radiative, electrical and thermal model, we highlight that, without a large conductive-convective heat transfer coefficient applied to the cell, the rise in temperature of the photovoltaic cell induces dramatic efficiency losses. We then investigate solutions to mitigate thermal effects, such as radiative cooling or the decrease of the emissivity or the temperature of the radiator. Without extending the radiating area beyond that of the cell, gains by radiative cooling are marginal. However, for a given radiator temperature, decreasing its emissivity is beneficial to conversion efficiency and, in cases of limited conductive-convective cooling capacities, even leads to larger electrical power outputs. More importantly, for a realistic radiator structure made of tungsten and hafnium oxide, larger conversion efficiencies are reached with smaller radiator temperatures because thermal losses and thus needs for cooling are less.

Harvesting the Electromagnetic Energy Confined Close to a Hot Body

In the close vicinity of a hot body, at distances smaller than the thermal wavelength, a high electromagnetic energy density exists due to the presence of evanescent fields radiated by the partial charges in thermal motion around its surface. This energy density can surpass the energy density in vacuum by several orders of magnitude. By approaching a photovoltaic (PV) cell with a band gap in the infrared frequency range, this nonradiative energy can be transferred to it by photon tunnelling and surface mode coupling. Here we review the basic ideas and recent progress in near-field energy harvesting.

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics

Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.