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Guo TT, Chen JB, Yang CY, Zhang P, Jia SJ, Li Y, Chen JT, Zhao Y, Wang J, Zhang XQ. Artificial Neural Synapses Based on Microfluidic Memristors Prepared by Capillary Tubes and Ionic Liquid. J Phys Chem Lett 2024; 15:2542-2549. [PMID: 38413398 DOI: 10.1021/acs.jpclett.3c03184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
Neuromorphic simulation, i.e., the use of electronic devices to simulate the neural networks of the human brain, has attracted a lot of interest in the fields of data processing and memory. This work provides a new method for preparing a 1,3-dimethylimidazolium nitrate ([MMIm][NO3]:H2O) microfluidic memristor that is ultralow cost and technically uncomplicated. Such a fluidic device uses capillaries as memory tubes, which are structurally similar to interconnected neurons by simple solution treatment. When voltage is applied, the transmission of anions and cations in the tube corresponds to the release of neurotransmitters from the presynaptic membrane to the postsynaptic membrane. The change of synaptic weights (plasticity) also can be simulated by the gradual change of conductance of the fluid memristor. The learning process of microfluidic memristors is very obvious, and the habituation and recovery behaviors they exhibit are extremely similar to biological activities, representing its good use for simulating neural synapses.
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Affiliation(s)
- Tong-Tong Guo
- College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jian-Biao Chen
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Chun-Yan Yang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Pu Zhang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Shuang-Ju Jia
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiang-Tao Chen
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jian Wang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xu-Qiang Zhang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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Pandey A, Chernyshev A, Panthi YR, Zedník J, Šturcová A, Konefał M, Kočková O, Foulger SH, Vohlídal J, Pfleger J. Synapse-Mimicking Memristors Based on 3,6-Di( tpy)-9-Phenylcarbazole Unimer and Its Copolymer with Cobalt(II) Ions. Polymers (Basel) 2024; 16:542. [PMID: 38399920 PMCID: PMC10892321 DOI: 10.3390/polym16040542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2023] [Revised: 02/09/2024] [Accepted: 02/14/2024] [Indexed: 02/25/2024] Open
Abstract
The title compound, unimer U (tpy stands for 2,2':6',2″-terpyridin-4'-yl end-group), by itself shows the memristor effect with a retention time of 18 h and persistence of 11 h. Its coordination copolymer with Co(II) ions, [CoU]n, exhibits multimodal resistance changes similar to the synaptic responses observed in biological systems. More than 320 cycles of potentiation and depression measured in continuous sequence occurred without observing a significant current change, confirming the operational stability and reproducibility of the device based on the [CoU]n polymer. The synaptic effect of a device with an indium tin oxide (ITO)/[CoU]n/top-electrode (TE) configuration is more pronounced for the device with TE = Au compared to devices with TE = Al or Ga. However, the latter TEs provide a cost-effective approach without any significant compromise in device plasticity. The detected changes in the synaptic weight, about 12% for pair-pulse facilitation and 80% for its depression, together with a millisecond trigger and reading pulses that decay exponentially on the time scale typical of neurosynapses, justify the device's ability to learn and memorize. These properties offer potential applications in neuromorphic computation and brain-inspired synaptic devices.
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Affiliation(s)
- Ambika Pandey
- Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic; (A.P.); (Y.R.P.)
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Andrei Chernyshev
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Yadu Ram Panthi
- Faculty of Mathematics and Physics, Charles University, Ke Karlovu 3, 121 16 Prague, Czech Republic; (A.P.); (Y.R.P.)
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Jiří Zedník
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Adriana Šturcová
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Magdalena Konefał
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Olga Kočková
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
| | - Stephen H. Foulger
- Center for Optical Materials Science and Engineering Technology (COMSET), Department of Materials Science and Engineering, Clemson University, Clemson, SC 29634, USA;
- Department of Bioengineering, Clemson University, Clemson, SC 29634, USA
| | - Jiří Vohlídal
- Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University, Albertov 6, 128 00 Prague, Czech Republic; (A.C.); (J.Z.)
| | - Jiří Pfleger
- Institute of Macromolecular Chemistry, Czech Academy of Sciences, Heyrovského nám. 2, 162 00 Prague, Czech Republic; (A.Š.); (M.K.); (O.K.)
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Park W, Yoon T, Chang H, You J, Na S. An atomistic scale simulation study of structural properties in the silk-fibrohexamerin complex. NANOSCALE 2024; 16:821-832. [PMID: 38093650 DOI: 10.1039/d3nr04787c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
The use of Bombyx mori silk fibroin in composite materials has been extensively explored in many studies, owing to its remarkable mechanical properties. Recently, the N-glycan-engineered P25 protein was utilized to improve the mechanical properties of silk. However, the mechanism by which N-glycan-engineered P25 protein enhances the mechanical properties of silk remains unclear. This study analyzed the interaction between the P25 protein and silkworm silk using quantum mechanics/molecular mechanics multiscale simulations and discovered stronger hydrogen bonding between the amorphous domain and the P25 protein. The results confirmed that glycoengineering of the mannose molecule in N-glycan in orders of three, five, and seven increased the hydrogen bonding of the amorphous structures. However, P25 has fewer binding interactions with the crystalline domain. Silk amino acids and mannose molecules were analyzed using QM simulations, and hydroxyl and charged amino acids in the amorphous domains were found to have relatively higher reactivity with mannose molecules in N-glycans than basic and aliphatic amino acids in the crystalline domain. This study demonstrates how the N-glycan-engineered P25 protein can improve the mechanical properties of silk fibroin and identifies a key factor for N-glycan-engineered proteins.
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Affiliation(s)
- Wooboum Park
- Department of Mechanical Engineering, Korea University, 02841, Seoul, Republic of Korea.
| | - Taeyoung Yoon
- Department of Mechanical Engineering, Korea University, 02841, Seoul, Republic of Korea.
| | - Hyunjoon Chang
- HITS Inc., 124, Teheran-ro, Gangnam-gu, Seoul, 06234, Republic of Korea
| | - Juneseok You
- Department of Mechanical Engineering, Korea University, 02841, Seoul, Republic of Korea.
| | - Sungsoo Na
- Department of Mechanical Engineering, Korea University, 02841, Seoul, Republic of Korea.
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Wang L, Yang J, Zhu H, Li W, Wen D. Flexible Threshold-Type Switching Devices with Low Threshold and High Stability Based on Silkworm Hemolymph. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3709. [PMID: 36296899 PMCID: PMC9611976 DOI: 10.3390/nano12203709] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/02/2022] [Revised: 10/16/2022] [Accepted: 10/17/2022] [Indexed: 06/16/2023]
Abstract
In this paper, a floating-gate flexible nonvolatile memory is reported that is composed of natural biological materials, namely, silkworm hemolymph, graphene quantum dots as the floating-gate layer, and polymethyl methacrylate (PMMA) as the insulating layer. The device has a high ON/OFF current ratio (4.76 × 106), a low setting voltage (<−1.75 V), and good durability and retention ability. The device has two storage characteristics, namely, Flash and WORM, which can be effectively and accurately controlled by adjusting the limiting current during device setting. The resistance switching characteristics are the result of the formation and fracture of conductive filaments. The floating-gate flexible bioresistive random access memory prepared in this paper provides a new idea for the development of multifunctional and biocompatible flexible memory.
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Affiliation(s)
- Lu Wang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Jing Yang
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Hongyu Zhu
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Wenhao Li
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China
- HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
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Mao S, Sun B, Zhou G, Guo T, Wang J, Zhao Y. Applications of biomemristors in next generation wearable electronics. NANOSCALE HORIZONS 2022; 7:822-848. [PMID: 35697026 DOI: 10.1039/d2nh00163b] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
With the rapid development of mobile internet and artificial intelligence, wearable electronic devices have a great market prospect. In particular, information storage and processing of real-time collected data are an indispensable part of wearable electronic devices. Biomaterial-based memristive systems are suitable for storage and processing of the obtained information in wearable electronics due to the accompanying merits, i.e. sustainability, lightweight, degradability, low power consumption, flexibility and biocompatibility. So far, many biomaterial-based flexible and wearable memristive devices were prepared by spin coating or other technologies on a flexible substrate at room temperature. However, mechanical deformation caused by mechanical mismatch between devices and soft tissues leads to the instability of device performance. From the current research and practical application, the device will face great challenges when adapting to different working environments. In fact, some interesting studies have been performed to address the above issues while they were not intensively highlighted and overviewed. Herein, the progress in wearable biomemristive devices is reviewed, and the outlook and perspectives are provided in consideration of the existing challenges during the development of wearable biomemristive systems.
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Affiliation(s)
- Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
| | - Bai Sun
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Guangdong Zhou
- Scholl of Artificial Intelligence, Southwest University, Chongqing, 400715, China
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Jiangqiu Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
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Wang L, Zhu H, Wen D. Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation. J Phys Chem Lett 2021; 12:8956-8962. [PMID: 34505773 DOI: 10.1021/acs.jpclett.1c02815] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Gold nanoparticles (Au NPs) have good biocompatibility and special quantum effects. In this Letter, we embedded Au NPs into silkworm hemolymph (SH) to improve the performance of the device and fabricated Al/SH:Au NPs/indium tin oxide (ITO)/glass resistive random access memory. The device exhibits a bipolar switching behavior with a retention time of 104 s. Compared with the Al/SH/ITO device without Au NPs, the device has a higher ON/OFF current ratio (>105) and a smaller Vreset. The improvement in device performance is attributed to the fact that Au NPs act as the electron-trapping center in the device; a Coulomb blockade occurs after electrons are trapped, thereby increasing the resistance of the device in the high-resistance state. Using optimized devices can realize multilevel data storage and can also simulate synaptic characteristics such as potentiation and depression. The device is expected to be applied to high-density, low-cost, degradable, and biocompatible storage devices and neuromorphic computing in the future.
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Affiliation(s)
- Lu Wang
- School of Electronic Engineering, HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Hongyu Zhu
- School of Electronic Engineering, HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China
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Wang L, Yang T, Wen D. Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2085. [PMID: 34443915 PMCID: PMC8401437 DOI: 10.3390/nano11082085] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/16/2021] [Revised: 08/12/2021] [Accepted: 08/15/2021] [Indexed: 12/02/2022]
Abstract
In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.
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Affiliation(s)
- Lu Wang
- HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; (T.Y.); (D.W.)
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Lee T, Kim S, Kim J, Park SC, Yoon J, Park C, Sohn H, Ahn JH, Min J. Recent Advances in Biomolecule-Nanomaterial Heterolayer-Based Charge Storage Devices for Bioelectronic Applications. MATERIALS (BASEL, SWITZERLAND) 2020; 13:E3520. [PMID: 32784985 PMCID: PMC7475838 DOI: 10.3390/ma13163520] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/12/2020] [Revised: 07/27/2020] [Accepted: 08/04/2020] [Indexed: 11/16/2022]
Abstract
With the acceleration of the Fourth Industrial Revolution, the development of information and communications technology requires innovative information storage devices and processing devices with low power and ultrahigh stability. Accordingly, bioelectronic devices have gained considerable attention as a promising alternative to silicon-based devices because of their various applications, including human-body-attached devices, biomaterial-based computation systems, and biomaterial-nanomaterial hybrid-based charge storage devices. Nanomaterial-based charge storage devices have witnessed considerable development owing to their similarity to conventional charge storage devices and their ease of applicability. The introduction of a biomaterial-to-nanomaterial-based system using a combination of biomolecules and nanostructures provides outstanding electrochemical, electrical, and optical properties that can be applied to the fabrication of charge storage devices. Here, we describe the recent advances in charge storage devices containing a biomolecule and nanoparticle heterolayer including (1) electrical resistive charge storage devices, (2) electrochemical biomemory devices, (3) field-effect transistors, and (4) biomemristors. Progress in biomolecule-nanomaterial heterolayer-based charge storage devices will lead to unprecedented opportunities for the integration of information and communications technology, biotechnology, and nanotechnology for the Fourth Industrial Revolution.
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Affiliation(s)
- Taek Lee
- Department of Chemical Engineering, Kwangwoon University, Seoul 01897, Korea; (S.K.); (J.K.); (C.P.); (H.S.)
| | - Soomin Kim
- Department of Chemical Engineering, Kwangwoon University, Seoul 01897, Korea; (S.K.); (J.K.); (C.P.); (H.S.)
| | - Jinmyeong Kim
- Department of Chemical Engineering, Kwangwoon University, Seoul 01897, Korea; (S.K.); (J.K.); (C.P.); (H.S.)
| | - Sang-Chan Park
- Department of Electronic Engineering, Kwangwoon University, Wolgye-dong, Nowon-gu, Seoul 01899, Korea;
| | - Jinho Yoon
- Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA;
| | - Chulhwan Park
- Department of Chemical Engineering, Kwangwoon University, Seoul 01897, Korea; (S.K.); (J.K.); (C.P.); (H.S.)
| | - Hiesang Sohn
- Department of Chemical Engineering, Kwangwoon University, Seoul 01897, Korea; (S.K.); (J.K.); (C.P.); (H.S.)
| | - Jae-Hyuk Ahn
- Department of Electronic Engineering, Kwangwoon University, Wolgye-dong, Nowon-gu, Seoul 01899, Korea;
| | - Junhong Min
- School of Integrative Engineering, Chung-Ang University, Seoul 06974, Korea
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