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For: Nishio K, Yayama T, Miyazaki T, Taoka N, Shimizu M. Ultrathin silicon oxynitride layer on GaN for dangling-bond-free GaN/insulator interface. Sci Rep 2018;8:1391. [PMID: 29362443 DOI: 10.1038/s41598-018-19283-4] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/22/2017] [Accepted: 12/27/2017] [Indexed: 11/09/2022]  Open
Number Cited by Other Article(s)
1
Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric. ELECTRONICS 2022. [DOI: 10.3390/electronics11060895] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
2
Herlem G, Picaud F. Breaking the Controversy of the Electropolymerization of Pyrrole Mechanisms by the Effective Screening Medium Quantum Charged Model Interface. J Phys Chem A 2021;125:1860-1869. [PMID: 33625857 DOI: 10.1021/acs.jpca.0c10269] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
3
Yang J. A computational study on the electrified Pt(111) surface by the cluster model. Phys Chem Chem Phys 2019;21:6112-6125. [DOI: 10.1039/c8cp07241h] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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