Polarization-maintaining reflection-mode THz time-domain spectroscopy of a polyimide based ultra-thin narrow-band metamaterial absorber

Multi-band terahertz anisotropic metamaterial absorber composed of graphene-based split square ring resonator array featuring two gaps and a connecting bar

A multi-band anisotropic metamaterial absorber operating in the terahertz (THz) range is constructed using a graphene-based split square ring resonator array featuring two gaps and a connecting bar. The design is meticulously simulated through the finite element method (FEM) using CST Software. Subsequently, an equivalent circuit model (ECM) is introduced, leveraging impedance and transmission lines, and implemented with a rapid MATLAB code to evaluate the absorber's behavior in the THz spectrum. The proposed absorber, dynamically adjustable through a one-layered resonator array, exhibits a strong linear dichroism response of 99% within a frequency range of 0.3-4 THz. The metamaterial has an absorption rate of 81% for one absorption band in transverse magnetic mode and its three absorption bands in transverse electric mode have an average of 99.3% in each absorption band with absorption over 99%. This absorber holds potential applications in polarization-sensitive devices and THz systems. The ECM model was established to provide an efficient analytical tool for assessing the absorber's performance, and the FEM simulation results align well with those derived from the ECM.

High-performance dual-tunable terahertz absorber based on strontium titanate and bulk Dirac semimetal for temperature sensing and switching function

In this study, a perfect metamaterial absorber based on strontium titanate and bulk Dirac semimetals is proposed. When the temperature of strontium titanate was 300K, the dual-band absorptions were 99.74% and 99.99% at 1.227 and 1.552 THz, respectively. The sensitivities based on a transverse magnetic (TM) wave were 0.95 and 1.22 GHz/K; the sensitivity based on a transverse electric (TE) wave was 0.76 GHz/K. The TE and TM waves were modulated by inserting a bulk Dirac semimetal between the concave and convex devices. The modulation depth of the TE wave was 97.9% at 1.1 THz; the extinction ratio was 16.9 dB. The modulation depth of the TE wave at 1.435 THz was 95.9%; the extinction ratio was 13.89 dB. The TM wave modulation depth at 1.552 THz was 95.9%; the extinction ratio was 13.98 dB. Irrespective of a TE or TM wave, the terahertz absorber has good switching and temperature-sensing performance based on strontium titanate and bulk Dirac semimetals as well as broad application prospects in temperature sensing and switching devices.

Metasurface-Assisted Terahertz Sensing

Terahertz (THz) waves, which fall between microwaves and infrared bands, possess intriguing electromagnetic properties of non-ionizing radiation, low photon energy, being highly sensitive to weak resonances, and non-polar material penetrability. Therefore, THz waves are extremely suitable for sensing and detecting chemical, pharmaceutical, and biological molecules. However, the relatively long wavelength of THz waves (30~3000 μm) compared to the size of analytes (1~100 nm for biomolecules, <10 μm for microorganisms) constrains the development of THz-based sensors. To circumvent this problem, metasurface technology, by engineering subwavelength periodic resonators, has gained a great deal of attention to enhance the resonance response of THz waves. Those metasurface-based THz sensors exhibit high sensitivity for label-free sensing, making them appealing for a variety of applications in security, medical applications, and detection. The performance of metasurface-based THz sensors is controlled by geometric structure and material parameters. The operating mechanism is divided into two main categories, passive and active. To have a profound understanding of these metasurface-assisted THz sensing technologies, we review and categorize those THz sensors, based on their operating mechanisms, including resonators for frequency shift sensing, nanogaps for enhanced field confinement, chirality for handedness detection, and active elements (such as graphene and MEMS) for advanced tunable sensing. This comprehensive review can serve as a guideline for future metasurfaces design to assist THz sensing and detection.

Multifunctional and switchable metamaterial for terahertz polarization modulation in the reflection mode

In this paper, a broadband multi-layered active metamaterial design is investigated, which can achieve a high polarization conversion efficiency over a wide band of frequencies in the terahertz regime. The design can be switched to an efficient metamaterial absorber using the phase transition property of vanadium dioxide (V O 2). Additionally, the designed structure can convert the linear polarization of the incoming wavefronts to its cross-polarization and linear polarization to circular polarization in the reflection mode. The broadband characteristic is achieved due to the strong anisotropic behavior of the metasurface. The structure is robust to a wide range of incident angles as well. The proposed switchable multifunctional design can contribute to the development of active plasmonic polarization devices and metamaterial absorbers.

Multifunctional terahertz absorber based on the Dirac semimetal and vanadium dioxide

In this paper, a multifunctional terahertz (THz) absorber based on Dirac semimetal and vanadium dioxide (V O ₂) is proposed. By modulating the temperature of V O ₂, the absorber can be switched between the narrow band and wide band. When V O ₂ is in the metallic state, the absorber has a broadband absorption effect with a bandwidth of approximately 4 THz. It has the advantages of insensitivity to polarization and wide-angle absorption. When V O ₂ is in the insulating state, the absorber has two absorption peaks with absorptivity exceeding 90% and sensitivities of 297.7 and 402 GHz/RIU, and thus can be used as a highly sensitive sensor for cell detection. When the Fermi level of the Dirac semimetal is changed, the absorption characteristics can be modulated. The absorber has broad application prospects in multifunctional modulated devices.

Fractal interwoven resonator based penta-band metamaterial absorbers for THz sensing and imaging

This paper presents a unique penta-band metamaterial absorber platform for terahertz imaging systems.The proposed fractal metamaterial absorber (FMMA) consists of fractal triangle section metasurfaces. By combining fractal resonators posing different operation skills in the same unit cell, the absorber shows multiband spectral response. The proposed unit cell structure operates at five near perfect absorption modes corresponding to the frequency bands of 1.1 THz, 3.4 THz, 4.9 THz, 5.9 THz, and 7.8 THz, respectively. Based on the fractal metamaterial absorber array, we also propose a sensing pixel design for bimaterial cantilever array sensing systems. The single pixel assembles 4x6 fractal resonator array and $$SiO_2$$ S i O 2 -Al bimaterial microcantilevers. The sensing region of the FMMA pixel can bend the bimaterial cantilevers effectively at multiple modes, enhancing the imaging capacity. The effective medium theory is executed to visualize the constitute parameters during the absorption and reveal the origin of the rising modes. The absorption mechanism is also discussed based on the surface current distributions and electric field profiles. The numerical outcomes prove that the proposed fractal metamaterial unit cell is a promising candidate as an absorbing platform for THz band sensing and imaging applications. The derived iterative formula used in the fractal design procedure is explained for further investigations of microelectromechanical systems (MEMS) compatible compact absorber arrays.

A four-band and polarization-independent BDS-based tunable absorber with high refractive index sensitivity

A four-band terahertz tunable narrow-band perfect absorber based on a bulk Dirac semi-metallic (BDS) metamaterial with a microstructure is designed. The three-layer structure of this absorber from top to bottom is the Dirac semi-metallic layer, the dielectric layer and the metal reflector layer. Based on the Finite Element Method (FEM), we use the simulation software CST STUDIO SUITE to simulate the absorption characteristics of the designed absorber. The simulation results show that the absorption rate of the absorber is over 93% at frequencies of 1.22, 1.822, 2.148 and 2.476 THz, and three of them have achieved a perfect absorption rate of more than 95%. We use the localized surface plasmon resonance (LSPR), impedance matching and other theories to analyze its physical mechanism in detail. The influence of the geometric structure parameters of the absorber and the incident angle of electromagnetic waves on the absorption performance has also been studied in detail. Due to the rotational symmetry of the structure, the designed absorber has excellent polarization insensitivity. In addition, the maximum adjustable range of absorption frequency is 0.051 THz, which can be achieved by changing the Fermi energy of BDS. We also define the refractive index sensitivity (S), which is 39.1, 75.4, 119.1 and 122.0 GHz RIU^-1 for the four absorption modes when the refractive index varies in the range of 1 to 1.9. This high-performance absorber has a very good development prospect in the frontier fields of bio-chemical sensing and special environmental detection.

n-type Ge/Si antennas for THz sensing

Ge-on-Si plasmonics holds the promise for compact and low-cost solutions in the manipulation of THz radiation. We discuss here the plasmonic properties of doped Ge bow-tie antennas made with a low-point cost CMOS mainstream technology. These antennas display resonances between 500 and 700 GHz, probed by THz time domain spectroscopy. We show surface functionalization of the antennas with a thin layer of α-lipoic acid that red-shifts the antenna resonances by about 20 GHz. Moreover, we show that antennas protected with a silicon nitride cap layer exhibit a comparable red-shift when covered with the biolayer. This suggests that the electromagnetic fields at the hotspot extend well beyond the cap layer, enabling the possibility to use the antennas with an improved protection of the plasmonic material in conjunction with microfluidics.

Broadband terahertz absorber with tunable frequency and bandwidth by using Dirac semimetal and strontium titanate

A bifunctional broadband absorber in the terahertz band based on patterned bulk Dirac semimetal (BDS) and strontium titanate (STO) is proposed. The properties of the absorber are investigated using the finite-difference time-domain (FDTD) method. The results show that the width of absorption can be modulated from 0.59 THz to 0.7 THz when the Fermi energy of the BDS is independently shifted from 40 meV to 50 meV. By tuning the temperature from 250 K to 400K, the center frequency of the broadband absorption spectrum can be changed from 1.311 THz to 1.505 THz, and the absorption bandwidth broadens from 0.66 THz to 0.81 THz. In addition, the simulation results show that the absorber is insensitive to electromagnetic wave polarization, and can still maintain a stable broadband absorption effect when the oblique incidence is within 40° for TE and TM modes. Based on the impedance matching theory, the physical mechanism of the broadband absorption is analyzed theoretically. This work can provide an alternative way to design high-performance multifunctional tunable terahertz devices.

Guided mode resonance flat-top bandpass filter for terahertz telecom applications

In this work, we design and experimentally demonstrate a novel terahertz (THz) filter exhibiting a flattened spectral response in the atmospheric transmission window around the central frequency of 300 GHz. The innovative concept behind this filter is the coupling of Fabry-Perot and guided mode resonances. The latter arise from a two-dimensional patch array patterned on an aluminum layer deposited on a low loss cyclo-olefin polymer. The filter experimental performance shows high transmittance in the flat-top band, with less than 3 dB losses, and high out-of-band rejection, as theoretically expected. This kind of component provides a cost-effective, functional solution for narrowband filtering in emerging THz devices and systems with possible applications in wireless telecommunications.