Magnetic field effect on the energy levels of an exciton in a GaAs quantum dot: Application for excitonic lasers

GaAs Cone-Shell Quantum Dots in a Lateral Electric Field: Exciton Stark-Shift, Lifetime, and Fine-Structure Splitting

Strain-free GaAs cone-shell quantum dots have a unique shape, which allows a wide tunability of the charge-carrier probability densities by external electric and magnetic fields. Here, the influence of a lateral electric field on the optical emission is studied experimentally using simulations. The simulations predict that the electron and hole form a lateral dipole when subjected to a lateral electric field. To evaluate this prediction experimentally, we integrate the dots in a lateral gate geometry and measure the Stark-shift of the exciton energy, the exciton intensity, the radiative lifetime, and the fine-structure splitting (FSS) using single-dot photoluminescence spectroscopy. The respective gate voltage dependencies show nontrivial trends with three pronounced regimes. We assume that the respective dominant processes are charge-carrier deformation at a low gate voltage U, a vertical charge-carrier shift at medium U, and a lateral charge-carrier polarization at high U. The lateral polarization forms a dipole, which can either enhance or compensate the intrinsic FSS induced by the QD shape anisotropy, dependent on the in-plane orientation of the electric field. Furthermore, the data show that the biexciton peak can be suppressed by a lateral gate voltage, and we assume the presence of an additional vertical electric field induced by surface charges.

Cone-Shell Quantum Structures in Electric and Magnetic Fields as Switchable Traps for Photoexcited Charge Carriers

The optical emission of cone-shell quantum structures (CSQS) under vertical electric (F) and magnetic (B) fields is studied by means of simulations. A CSQS has a unique shape, where an electric field induces the transformation of the hole probability density from a disk into a quantum-ring with a tunable radius. The present study addresses the influence of an additional magnetic field. A common description for the influence of a B-field on charge carriers confined in a quantum dot is the Fock-Darwin model, which introduces the angular momentum quantum number l to describe the splitting of the energy levels. For a CSQS with the hole in the quantum ring state, the present simulations demonstrate a B-dependence of the hole energy which substantially deviates from the prediction of the Fock-Darwin model. In particular, the energy of exited states with a hole lh> 0 can become lower than the ground state energy with lh= 0. Because for the lowest-energy state the electron le is always zero, states with lh> 0 are optically dark due to selection rules. This allows switching from a bright state (lh= 0) to a dark state (lh> 0) or vice versa by changing the strength of the F or B field. This effect can be very interesting for trapping photoexcited charge carriers for a desired time. Furthermore, the influence of the CSQS shape on the fields required for the bright to dark state transition is investigated.

An off-center endohedrally confined hydrogen molecule

In this study, we address the problem of a C₆₀ endohedrally confined hydrogen molecule through a configuration-interaction approach to electronic dynamics. Modeling the confinement by means of a combination of two Woods-Saxon potentials, we analyze the stability of the system as a function of the nuclei position through the behavior of the electronic spectrum. After studying the convergence of two different partial wave expansions, one related to the molecular Coulomb centers and the other related to the off-centering of the C₆₀ well, we found that the second approach provides a more accurate description of the system. Furthermore, we observed that the inter-atomic distance changes based on the position of the atoms inside the cavity. Thus, to obtain the most favourable energetic configuration for the molecule, it should be positioned inside the cavity next to the structure, where its size decreases.

Effect of confinement potential shape on the electronic, thermodynamic, magnetic and transport properties of a GaAs quantum dot at finite temperature

The effect of the shape of the confinement potential on the electronic, thermodynamic, magnetic and transport properties of a GaAs quantum dot is studied using the power-exponential potential model with steepness parameter p. The average energy, heat capacity, magnetic susceptibility and persistent current are calculated using the canonical ensemble approach at low temperature. It is shown that for soft confinement, the average energy depends strongly on p while it is almost independent of p for hard confinement. The heat capacity is found to be independent of the shape and depth of the confinement potential at low temperatures and for the magnetic field considered. It is shown that the system undergoes a paramagnetic-diamagnetic transition at a critical value of the magnetic field. It is furthermore shown that for low values of the potential depth, the system is always diamagnetic irrespective of the shape of the potential if the magnetic field exceeds a certain value. For a range of the magnetic field, there exists a window of p values in which a re-entrant behavior into the diamagnetic phase can occur. Finally, it is shown that the persistent current in the present quantum dot is diamagnetic in nature and its magnitude increases with the depth of the dot potential but is independent of p for the parameters considered.