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Hwang C, Baek S, Song Y, Lee WJ, Park S. Wide-range and selective detection of SARS-CoV-2 DNA via surface modification of electrolyte-gated IGZO thin-film transistors. iScience 2024; 27:109061. [PMID: 38361625 PMCID: PMC10867417 DOI: 10.1016/j.isci.2024.109061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/27/2023] [Accepted: 01/25/2024] [Indexed: 02/17/2024] Open
Abstract
The 2019 coronavirus pandemic resulted in a massive global healthcare crisis, highlighting the necessity to develop effective and reproducible platforms capable of rapidly and accurately detecting SARS-CoV-2. In this study, we developed an electrolyte-gated indium-gallium-zinc-oxide (IGZO) thin-film transistor with sequential surface modification to realize the low limit of detection (LoD <50 fM) and a wide detection range from 50 fM to 5 μM with good linearity (R2 = 0.9965), and recyclability. The surface chemical modification was achieved to anchor the single strand of SARS-CoV-2 DNA via selective hybridization. Moreover, the minute electrical signal change following the chemical modification was investigated by in-depth physicochemical analytical techniques. Finally, we demonstrate fully recyclable biosensors based on oxygen plasma treatment. Owing to its cost-effective fabrication, rapid detection at the single-molecule level, and low detection limit, the proposed biosensor can be used as a point-of-care platform to perform timely and effective SARS-CoV-2 detection.
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Affiliation(s)
- Chuljin Hwang
- Department of Electrical and Computer Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| | - Seokhyeon Baek
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| | - Yoonseok Song
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
| | - Won-June Lee
- Department of Chemistry, Purdue University, West Lafayette, IN 47907, USA
| | - Sungjun Park
- Department of Electrical and Computer Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
- Department of Intelligence Semiconductor Engineering, Ajou University, Suwon, Gyeonggi-do 16499, Republic of Korea
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2
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Park KW, Cho WJ. High-Performance IGZO Nanowire-Based Field-Effect Transistors with Random-Network Channels by Electrospun PVP Nanofiber Template Transfer. Polymers (Basel) 2022; 14:651. [PMID: 35160640 PMCID: PMC8837951 DOI: 10.3390/polym14030651] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/20/2022] [Revised: 02/07/2022] [Accepted: 02/07/2022] [Indexed: 11/21/2022] Open
Abstract
A random network of indium-gallium-zinc oxide (IGZO) nanowires was fabricated by electrospun-polyvinylpyrrolidone (PVP)-nanofiber template transfer. Conventional electrospun nanofibers have been extensively studied owing to their flexibility and inherently high surface-to-volume ratio. However, solution-based IGZO nanofibers have critical issues such as poor electrical properties, reliability, and uniformity. Furthermore, high-temperature calcination, which is essential for vaporizing the polymer matrix, hinders their applications for flexible electronics. Therefore, sputter-based IGZO nanowires were obtained in this study using electrospun PVP nanofibers as an etching mask to overcome the limitations of conventional electrospun IGZO nanofibers. Field-effect transistors (FETs) were fabricated using two types of channels, that is, the nanofiber template-transferred IGZO nanowires and electrospun IGZO nanofibers. A comparison of the transmittance, adhesion, electrical properties, reliability, and uniformity of these two channels in operation revealed that the nanofiber template-transferred IGZO nanowire FETs demonstrated higher transmittance, stronger substrate adhesion, superior electrical performance, and operational reliability and uniformity compared to the electrospun IGZO nanofiber FETs. The proposed IGZO nanowires fabricated by PVP nanofiber template transfer are expected to be a promising channel structure that overcomes the limitations of conventional electrospun IGZO nanofibers.
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Affiliation(s)
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 139-701, Korea;
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3
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Flexible and Transparent Polymer-Based Optical Humidity Sensor. SENSORS 2021; 21:s21113674. [PMID: 34070545 PMCID: PMC8198816 DOI: 10.3390/s21113674] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/27/2021] [Revised: 05/19/2021] [Accepted: 05/21/2021] [Indexed: 11/16/2022]
Abstract
Thin spin-coated polymer films of amphiphilic copolymer obtained by partial acetalization of poly (vinyl alcohol) are used as humidity-sensitive media. They are deposited on polymer substrate (PET) in order to obtain a flexible humidity sensor. Pre-metallization of substrate is implemented for increasing the optical contrast of the sensor, thus improving the sensitivity. The morphology of the sensors is studied by surface profiling, while the transparency of the sensor is controlled by transmittance measurements. The sensing behavior is evaluated through monitoring of transmittance values at different levels of relative humidity gradually changing in the range 5-95% and the influence of up to 1000 bending deformations is estimated by determining the hysteresis and sensitivity of the flexible sensor after each set of deformations. The successful development of a flexible sensor for optical monitoring of humidity in a wide humidity range is demonstrated and discussed.
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Kang IH, Hwang SH, Baek YJ, Kim SG, Han YL, Kang MS, Woo JG, Lee JM, Yu ES, Bae BS. Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors. ACS OMEGA 2021; 6:2717-2726. [PMID: 33553889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Accepted: 01/06/2021] [Indexed: 06/12/2023]
Abstract
Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer. The interfacial oxidation between the gate metal and In-Ga-Zn oxide (IGZO) was investigated with Al, Ti, and Mo. Positive bias was applied to the gate metal for enhanced oxygen diffusion since the migration of oxygen is an important factor in interfacial oxidation. Through interfacial oxidation, a top-gate oxide TFT was developed with low source-drain voltages below 0.5 V and a gate voltage swing less than 1 V, which provide low power consumption.
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Affiliation(s)
- In Hye Kang
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Sang Ho Hwang
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Young Jo Baek
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Seo Gwon Kim
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Ye Lin Han
- Department of NanoBioTronics, Hoseo University, Asan, Chungnam 31499, Korea
| | - Min Su Kang
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Jae Geun Woo
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Jong Mo Lee
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Eun Seong Yu
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Byung Seong Bae
- School of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
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5
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Kang IH, Hwang SH, Baek YJ, Kim SG, Han YL, Kang MS, Woo JG, Lee JM, Yu ES, Bae BS. Interfacial Oxidized Gate Insulators for Low-Power Oxide Thin-Film Transistors. ACS OMEGA 2021; 6:2717-2726. [PMID: 33553889 PMCID: PMC7860086 DOI: 10.1021/acsomega.0c04924] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2020] [Accepted: 01/06/2021] [Indexed: 06/18/2023]
Abstract
Low power consumption is essential for wearable and internet-of-things applications. An effective way of reducing power consumption is to reduce the operation voltage using a very thin and high-dielectric gate insulator. In an oxide thin-film transistor (TFT), the channel layer is an oxide material in which oxygen reacts with metal to form a thin insulator layer. The interfacial oxidation between the gate metal and In-Ga-Zn oxide (IGZO) was investigated with Al, Ti, and Mo. Positive bias was applied to the gate metal for enhanced oxygen diffusion since the migration of oxygen is an important factor in interfacial oxidation. Through interfacial oxidation, a top-gate oxide TFT was developed with low source-drain voltages below 0.5 V and a gate voltage swing less than 1 V, which provide low power consumption.
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Affiliation(s)
- In Hye Kang
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Sang Ho Hwang
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Young Jo Baek
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Seo Gwon Kim
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Ye Lin Han
- Department
of NanoBioTronics, Hoseo University, Asan, Chungnam 31499, Korea
| | - Min Su Kang
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Jae Geun Woo
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Jong Mo Lee
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Eun Seong Yu
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
| | - Byung Seong Bae
- School
of Electronics and Display Engineering, Hoseo University, Asan, Chungnam 31499, Korea
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Huang K, Wu J, Chen Z, Xu H, Wu Z, Tao K, Yang T, Wu Q, Zhou H, Huang B, Chen H, Chen J, Liu C. Nanostructured High-Performance Thin-Film Transistors and Phototransistors Fabricated by a High-Yield and Versatile Near-Field Nanolithography Strategy. ACS NANO 2019; 13:6618-6630. [PMID: 31082195 DOI: 10.1021/acsnano.9b00665] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Thin-film transistors (TFTs) and field-effect transistors (FETs) are basic units to build functional electronic circuits and investigate transport physics. In conventional TFTs or FETs, performance in terms of current level, on-off ratio, and the sensitivity of detection is limited by homogeneous semiconducting layers. In this paper, we develop TFTs with submicron heterostructures by using a strategy based on near-field photolithography. We use an array of total-reflective polydimethylsiloxane pyramids or trenches as a soft photomask in photolithography to induce multiple reflections and diffractions to focus the light. The textured feature enables the generation of gaps, dots, and grids at the nanoscale, with dimensions as small as sub-100 nm on substrates at the centimeter scale. We demonstrated the very high performance oxide TFTs on the nanoscale and periodic degenerately doped heterojunctions, and they yielded a nearly 20-fold increase in transconductance and apparent device mobility. The on-off ratio was higher than 109, with notably enhanced output current and clear scaling effect with channel length. We also built nanostructured wide-gap/narrow-gap heterojunctions to balance the high on-off ratio and sensitive photoresponse in a unidirectional phototransistor. This study shows the viability of programming a variety of nanoscale submicron patterns or interfaces in TFTs and FETs to significantly enlarge the scope of research on multifunctional TFTs and FETs.
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Affiliation(s)
- Kairong Huang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Jin Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Zihao Chen
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Huihua Xu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Zixuan Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Kai Tao
- The Ministry of Education Key Laboratory of Micro and Nano Systems for Aerospace , Northwestern Polytechnical University , Xi'an 710072 , China
| | - Tengzhou Yang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Qian Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Hang Zhou
- Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate School , Peking University , Shenzhen 518055 , China
| | - Bolong Huang
- Department of Applied Biology and Chemical Technology , The Hong Kong Polytechnic University , Hung Hom, Kowloon , Hong Kong SAR
- The Hong Kong Polytechnic University Shenzhen Research Institute , Shenzhen 518000 , China
| | - Huanjun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Jun Chen
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , China
- State Key Lab of Silicon Materials , Zhejiang University , Hangzhou 310027 , China
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7
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Abstract
Flexible sensors have the potential to be seamlessly applied to soft and irregularly shaped surfaces such as the human skin or textile fabrics. This benefits conformability dependant applications including smart tattoos, artificial skins and soft robotics. Consequently, materials and structures for innovative flexible sensors, as well as their integration into systems, continue to be in the spotlight of research. This review outlines the current state of flexible sensor technologies and the impact of material developments on this field. Special attention is given to strain, temperature, chemical, light and electropotential sensors, as well as their respective applications.
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