Giant photovoltaic response in band engineered ferroelectric perovskite

Depolarization Field-Induced Photovoltaic Effect in Graphene/α-In2Se3/Graphene Heterostructures

The ferroelectric photovoltaic effect (FPVE) enables alternate pathways for energy conversion that are not allowed in centrosymmetric materials. Understanding the dominant mechanism of the FPVE at the ultrathin limit is important for defining the ultimate efficiency. In contrast to the wide band gap conventional thin-film ferroelectrics, 2D α-In2Se3 has an ideal band gap of 1.3 eV and enables the fabrication of ultrathin and stable heterostructures, providing the perfect platform to explore FPVE in the nanoscale limit. Here, we study the ferroelectric layer thickness-dependent FPVE in vertical few-layer graphene/α-In2Se3/graphene heterostructures. We find that the short-circuit photocurrent is antiparallel to the ferroelectric polarization and increases exponentially with decreasing thickness. We show that the observed behavior is predicted by the depolarization field model, originating from the unscreened bound charges due to the finite density of states in semimetal few-layer graphene. As a result, the heterostructures show enhancement of the power conversion efficiency, reaching 2.56 × 10-3% under 100 W/cm2 in 18 nm thick α-In2Se3, approximately 275 times more than the 50 nm thick α-In2Se3. These results demonstrate the importance of the depolarization field at the nanoscale and define design principles for the potential of harnessing FPVE at reduced dimension.

Photoelectrocaloric effect in ferroelectric oxide

The enhanced electrocaloric (EC) effect in solid-state-based lead-free ferroelectric Ba_0.875(Bi_0.5Li_0.5)_0.125TiO₃ system is investigated under light as an external stimulus. The sample exhibits an analogous value of maximum change in entropy at Curie temperature, extracted from the two different measurements process. Notably, the sample depicts maximum value of adiabatic change in temperature (ΔT) as 1.27 K and isothermal entropy change (ΔS) as 2.05 J/K kg along with the EC coefficient value of 0.426 K mm/kV, under dark conditions. In addition, the sample exhibits > 0.5 K adiabatic temperature change over a broad temperature range (~ 35 K). Remarkably, the EC parameters display ~ 27% enhancement upon 405 nm light illumination. The demonstrated photoelectrocaloric effect is found to be in accordance with theoretical formalism. The present work elucidates the light as an additional degree of freedom to widen the potential of solid-state-based technologies for advanced environment-friendly cooling devices.

Enhanced bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6

The photocurrent generation in photovoltaics relies essentially on the interface of p-n junction or Schottky barrier with the photoelectric efficiency constrained by the Shockley-Queisser limit. The recent progress has shown a promising route to surpass this limit via the bulk photovoltaic effect for crystals without inversion symmetry. Here we report the bulk photovoltaic effect in two-dimensional ferroelectric CuInP2S6 with enhanced photocurrent density by two orders of magnitude higher than conventional bulk ferroelectric perovskite oxides. The bulk photovoltaic effect is inherently associated to the room-temperature polar ordering in two-dimensional CuInP2S6. We also demonstrate a crossover from two-dimensional to three-dimensional bulk photovoltaic effect with the observation of a dramatic decrease in photocurrent density when the thickness of the two-dimensional material exceeds the free path length at around 40 nm. This work spotlights the potential application of ultrathin two-dimensional ferroelectric materials for the third-generation photovoltaic cells.

Linear bulk photovoltaic effect and phenomenological study in multi-phase co-existing ferroelectric system

Ferroelectric systems with multi-phase co-existence are found to exhibit anomalous photovoltaic response. In this work, detailed photovoltaic studies are carried out under 405 nm light illumination on Ba1-x(Bi0.5Li0.5)xTiO3ferroelectric oxides having the co-existence of tetragonal and orthorhombic phases. The linear and sinusoidal photocurrent-dependence as a function of light intensity and polarization-direction, respectively elucidate the experimental evidence for linear bulk-photovoltaic effect. Importantly, the temperature-dependent photovoltaic studies display 2-fold enhancement in photovoltage near the ferroelectric transition temperature (TC). The observed features in photovoltage follow inverse temperature-dependence of the photoconductivity. The linear relationship between the calculated bulk-photovoltaic tensor component and the photocurrent established from the proposed phenomenological model is verified through their composition-dependent studies. These studies provide the desired design parameters to engineer the ferroelectric system for better photovoltaic characteristics suitable for device applications.

Physical vapor deposited organic ferroelectric diisopropylammonium bromide film and its self-powered photodetector characteristics

Organic diisopropylammonium bromide (DIPAB) is a promising material with superior ferroelectric characteristics. However, the DIPAB continuous film, which is essential to explore its application potential, is challenging because its crystallization kinetics favors island-like microcrystalline growth. In this work, the continuous and uniform deposition of organic ferroelectric DIPAB film on a single crystalline Si(100) substrate is demonstrated by a thermal evaporation process. Structural and optical studies reveal that the film is c-axis oriented with an optical bandgap of 3.52 eV. The topographic image displays well-connected grain-like surface morphology with ∼2 nm roughness. The ferroelectric domain studies illustrate the in-plane orientation of the domains, which is in accordance with c-axis oriented film where polarization is along the in-plane b-axis. The phase and amplitude responses of the domains display hysteresis and butterfly characteristics, respectively and thereby endorse the ferroelectric nature of the film. Importantly, it is demonstrated that the DIPAB film exhibits remarkable self-powered UV-Vis photodetector characteristics with responsivity of 0.66 mA W^-1 and detectivity of 2.20 × 10⁹ Jones at 11.45 mW cm^-2 light intensity. The fabricated DIPAB film reported in this work can widen its application potential in self-powered photodetector and other optoelectronic devices.

Electric field and mechanical stress driven structural inhomogeneity and compositionally induced relaxor phase transformation in modified BaTiO3based lead-free ferroelectrics

The compositionally induced ferroelectric to relaxor transformation via diffuse phase transition and structural disorder by external stimuli is explored in lead-free Ba1-x(Bi0.5Li0.5)xTiO3(x= 0, 0.05, 0.1, 0.15, and 0.20) ferroelectric system. X-ray diffraction studies reveal the coexistence of the monoclinic phase along with the orthorhombic and tetragonal phases in BaTiO3,which could be the reason for its superior dielectric properties. The dielectric studies reveal that thex= 0.15 sample shows intrinsic dielectric relaxation due to the quenched-in random field caused by the atomic displacement. The ferroelectric to relaxor phase transformation is analysed by modified Curie-Weiss law. Furthermore, the driving forces for the relaxor behaviour in the system are attributed to the compositionally induced charge disorder, quenched-in random field, and oxygen vacancy related defects in the BBLT system. The detailed structural analysis on the relaxor ferroelectric samples displays direct evidence for the electric field and mechanical stress driven structural inhomogeneity. Notably, mechanically stressed and electrically poledx= 0.15 sample exhibits a remarkable 50% and 37% increase in orthorhombic phase fraction, respectively. Overall, the comprehensive studies on the lead-free modified BaTiO3samples give further insight into understanding the relaxor system.