Xu Z, Dong Y, Tseng CK, Hu T, Tong J, Zhong Q, Li N, Sim L, Lai KH, Lin Y, Li D, Li Y, Bliznetsov V, Fu YH, Zhu S, Lin Q, Zhang DH, Gu Y, Singh N, Kwong DL. CMOS-compatible all-Si metasurface polarizing bandpass filters on 12-inch wafers.
OPTICS EXPRESS 2019;
27:26060-26069. [PMID:
31510466 DOI:
10.1364/oe.27.026060]
[Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2019] [Accepted: 07/31/2019] [Indexed: 05/21/2023]
Abstract
The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.
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