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Youssef KA, Das A, Colomer JF, Hemberg A, Noirfalise X, Bittencourt C. Silver Decoration of Vertically Aligned MoS 2-MoO x Nanosheets: A Comprehensive XPS Investigation. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2882. [PMID: 38930251 PMCID: PMC11205143 DOI: 10.3390/ma17122882] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/19/2024] [Revised: 06/09/2024] [Accepted: 06/11/2024] [Indexed: 06/28/2024]
Abstract
This study investigates the simultaneous decoration of vertically aligned molybdenum disulfide nanostructure (VA-MoS2) with Ag nanoparticles (NPs) and nitrogen functionalization. Nitrogen functionalization was achieved through physical vapor deposition (PVD) DC-magnetron sputtering using nitrogen as a reactive gas, aiming to induce p-type behavior in MoS2. The utilization of reactive sputtering resulted in the growth of three-dimensional silver structures on the surface of MoS2, promoting the formation of silver nanoparticles. A comprehensive characterization was conducted to assess surface modifications and analyze chemical and structural changes. X-ray photoelectron spectroscopy (XPS) showed the presence of silver on the MoS2 surface. Scanning electron microscopy (SEM) confirmed successful decoration with silver nanoparticles, showing that deposition time affects the size and distribution of the silver on the MoS2 surface.
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Affiliation(s)
- Khaled Al Youssef
- Chimie des Interactions Plasma-Surface (ChIPS), Materials Institute, University of Mons, 23 Place du Parc, 7000 Mons, Belgium;
| | - Arkaprava Das
- Institute of Physical and Theoretical Chemistry, University of Tuebingen, 72076 Tuebingen, Germany;
| | - Jean-François Colomer
- Research Group on Carbon Nanostructures (CARBONNAGe), University of Namur, 61 Rue de Bruxelles, 5000 Namur, Belgium;
| | - Axel Hemberg
- Materia Nova, 3 Avenue Copernic, 7000 Mons, Belgium; (A.H.); (X.N.)
| | | | - Carla Bittencourt
- Chimie des Interactions Plasma-Surface (ChIPS), Materials Institute, University of Mons, 23 Place du Parc, 7000 Mons, Belgium;
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2
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Wang D, Zhou C, Filatov AS, Cho W, Lagunas F, Wang M, Vaikuntanathan S, Liu C, Klie RF, Talapin DV. Direct synthesis and chemical vapor deposition of 2D carbide and nitride MXenes. Science 2023; 379:1242-1247. [PMID: 36952427 DOI: 10.1126/science.add9204] [Citation(s) in RCA: 59] [Impact Index Per Article: 59.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/25/2023]
Abstract
Two-dimensional transition-metal carbides and nitrides (MXenes) are a large family of materials actively studied for various applications, especially in the field of energy storage. MXenes are commonly synthesized by etching the layered ternary compounds, called MAX phases. We demonstrate a direct synthetic route for scalable and atom-economic synthesis of MXenes, including compounds that have not been synthesized from MAX phases, by the reactions of metals and metal halides with graphite, methane, or nitrogen. The direct synthesis enables chemical vapor deposition growth of MXene carpets and complex spherulite-like morphologies that form through buckling and release of MXene carpet to expose fresh surface for further reaction. The directly synthesized MXenes showed excellent energy storage capacity for lithium-ion intercalation.
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Affiliation(s)
- Di Wang
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Chenkun Zhou
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Alexander S Filatov
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Wooje Cho
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Francisco Lagunas
- Department of Physics, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Mingzhan Wang
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | | | - Chong Liu
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | - Robert F Klie
- Department of Physics, University of Illinois Chicago, Chicago, IL 60607, USA
| | - Dmitri V Talapin
- Department of Chemistry and James Franck Institute, University of Chicago, Chicago, IL 60637, USA
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
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3
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Twitto A, Stern C, Poplinger M, Perelshtein I, Saha S, Jain A, Koski KJ, Deepak FL, Ramasubramaniam A, Naveh D. Optoelectronics of Atomic Metal-Semiconductor Interfaces in Tin-Intercalated MoS 2. ACS NANO 2022; 16:17080-17086. [PMID: 36223602 DOI: 10.1021/acsnano.2c07347] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Metal-semiconductor interfaces are ubiquitous in modern electronics. These quantum-confined interfaces allow for the formation of atomically thin polarizable metals and feature rich optical and optoelectronic phenomena, including plasmon-induced hot-electron transfer from metal to semiconductors. Here, we report on the metal-semiconductor interface formed during the intercalation of zero-valent atomic layers of tin (Sn) between layers of MoS2, a van der Waals layered material. We demonstrate that Sn interaction leads to the emergence of gap states within the MoS2 band gap and to corresponding plasmonic features between 1 and 2 eV (0.6-1.2 μm). The observed stimulation of the photoconductivity, as well as the extension of the spectral response from the visible regime toward the mid-infrared suggests that hot-carrier generation and internal photoemission take place.
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Affiliation(s)
- Avraham Twitto
- Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel
| | - Chen Stern
- Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel
| | - Michal Poplinger
- Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel
| | - Ilana Perelshtein
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel
| | - Sabyasachi Saha
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
- CEMES-CNRS, 29 Rue Jeanne Marvig, 31055Toulouse, France
| | - Akash Jain
- Department of Chemical Engineering, University of Massachusetts, Amherst, Massachusetts01003, United States
| | - Kristie J Koski
- Department of Chemistry, University of California, Davis, California95616, United States
| | - Francis Leonard Deepak
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Braga4715-330, Portugal
| | - Ashwin Ramasubramaniam
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, Massachusetts01003, United States
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, Ramat Gan52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan52900, Israel
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4
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Ben Jabra Z, Abel M, Fabbri F, Aqua JN, Koudia M, Michon A, Castrucci P, Ronda A, Vach H, De Crescenzi M, Berbezier I. Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC. ACS NANO 2022; 16:5920-5931. [PMID: 35294163 DOI: 10.1021/acsnano.1c11122] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g., turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1 ML Gr buffer) on a 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultraclean conditions for molecular beam epitaxy deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene. At low coverages, the deposition of Si produces large silicene sheets (some hundreds of nanometers large) attested by both AFM and SEM observations and the onset of a Raman peak at 560 cm-1, very close to the theoretical value of 570 cm-1 calculated for free-standing silicene. This vibrational mode at 560 cm-1 represents the highest ever experimentally measured value and is representative of quasi-free-standing silicene with almost no interaction with inert nonmetal substrates. From a coverage rate of 1 ML, the silicene sheets disappear at the expense of 3D Si dendritic islands whose density, size, and thickness increase with the deposited thickness. From this coverage, the Raman mode assigned to quasi-free-standing silicene totally vanishes, and the 2D flakes of silicene are no longer observed by AFM. The experimental results are in very good agreement with the results of kinetic Monte Carlo simulations that rationalize the initial flake growth in solid-state dewetting conditions, followed by the growth of ridges surrounding and eventually covering the 2D flakes. A full description of the growth mechanism is given. This study, which covers a wide range of growth parameters, challenges recent results stating the impossibility to grow silicene on a carbon inert surface and is very promising for large-scale silicene growth. It shows that silicene growth can be achieved using perfectly controlled and ultraclean deposition conditions and an almost defect-free Gr substrate.
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Affiliation(s)
| | - Mathieu Abel
- Aix Marseille University, CNRS, IM2NP, Marseille 13397, France
| | - Filippo Fabbri
- NEST, Istituto Nanoscienze-CNR, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy
| | - Jean-Noel Aqua
- Institut des Nanosciences de Paris, Sorbonne Université, CNRS, INSP, UMR 7588, 75005 Paris, France
| | - Mathieu Koudia
- Aix Marseille University, CNRS, IM2NP, Marseille 13397, France
| | - Adrien Michon
- Université Côte d'Azur, CNRS, CRHEA, Valbonne 06560, France
| | - Paola Castrucci
- Dipartimento di Fisica, Università di Roma Tor Vergata, Roma 00133, Italy
| | - Antoine Ronda
- Aix Marseille University, CNRS, IM2NP, Marseille 13397, France
| | - Holger Vach
- LPICM, CNRS, Ecole Polytechnique, IP Paris, Palaiseau 91128, France
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5
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Panasci SE, Koos A, Schilirò E, Di Franco S, Greco G, Fiorenza P, Roccaforte F, Agnello S, Cannas M, Gelardi FM, Sulyok A, Nemeth M, Pécz B, Giannazzo F. Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS 2 Obtained by MoO 3 Sulfurization. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:182. [PMID: 35055201 PMCID: PMC8778062 DOI: 10.3390/nano12020182] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/03/2021] [Revised: 01/01/2022] [Accepted: 01/03/2022] [Indexed: 01/27/2023]
Abstract
In this paper, we report a multiscale investigation of the compositional, morphological, structural, electrical, and optical emission properties of 2H-MoS2 obtained by sulfurization at 800 °C of very thin MoO3 films (with thickness ranging from ~2.8 nm to ~4.2 nm) on a SiO2/Si substrate. XPS analyses confirmed that the sulfurization was very effective in the reduction of the oxide to MoS2, with only a small percentage of residual MoO3 present in the final film. High-resolution TEM/STEM analyses revealed the formation of few (i.e., 2-3 layers) of MoS2 nearly aligned with the SiO2 surface in the case of the thinnest (~2.8 nm) MoO3 film, whereas multilayers of MoS2 partially standing up with respect to the substrate were observed for the ~4.2 nm one. Such different configurations indicate the prevalence of different mechanisms (i.e., vapour-solid surface reaction or S diffusion within the film) as a function of the thickness. The uniform thickness distribution of the few-layer and multilayer MoS2 was confirmed by Raman mapping. Furthermore, the correlative plot of the characteristic A1g-E2g Raman modes revealed a compressive strain (ε ≈ -0.78 ± 0.18%) and the coexistence of n- and p-type doped areas in the few-layer MoS2 on SiO2, where the p-type doping is probably due to the presence of residual MoO3. Nanoscale resolution current mapping by C-AFM showed local inhomogeneities in the conductivity of the few-layer MoS2, which are well correlated to the lateral changes in the strain detected by Raman. Finally, characteristic spectroscopic signatures of the defects/disorder in MoS2 films produced by sulfurization were identified by a comparative analysis of Raman and photoluminescence (PL) spectra with CVD grown MoS2 flakes.
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Affiliation(s)
- Salvatore E. Panasci
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
- Department of Physics and Astronomy, University of Catania, 95123 Catania, Italy
| | - Antal Koos
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Emanuela Schilirò
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Salvatore Di Franco
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Giuseppe Greco
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Patrick Fiorenza
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Fabrizio Roccaforte
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
| | - Simonpietro Agnello
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy; (M.C.); (F.M.G.)
- ATEN Center, University of Palermo, 90123 Palermo, Italy
| | - Marco Cannas
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy; (M.C.); (F.M.G.)
| | - Franco M. Gelardi
- Department of Physics and Chemistry Emilio Segrè, University of Palermo, 90123 Palermo, Italy; (M.C.); (F.M.G.)
| | - Attila Sulyok
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Miklos Nemeth
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Béla Pécz
- Centre for Energy Research, Institute of Technical Physics and Materials Science, Konkoly-Thege ut 29-33, 1121 Budapest, Hungary; (A.K.); (A.S.); (M.N.)
| | - Filippo Giannazzo
- Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, 95121 Catania, Italy; (S.E.P.); (E.S.); (S.D.F.); (G.G.); (P.F.); (F.R.); (S.A.)
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6
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Lei Y, Yang X, Feng W. Synthesis of vertically-aligned large-area MoS 2nanofilm and its application in MoS 2/Si heterostructure photodetector. NANOTECHNOLOGY 2021; 33:105709. [PMID: 34814119 DOI: 10.1088/1361-6528/ac3c7e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/12/2021] [Accepted: 11/23/2021] [Indexed: 06/13/2023]
Abstract
Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20 nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA W-1), good photodetectivity (5.36 × 1011Jones) and high on/off ratioIon/Ioff(8.31 × 103at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectively. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.
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Affiliation(s)
- Yong Lei
- School of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China
| | - Xiaozhan Yang
- School of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China
- Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, People's Republic of China
| | - Wenlin Feng
- School of Science, Chongqing University of Technology, Chongqing 400054, People's Republic of China
- Chongqing Key Laboratory of Green Energy Materials Technology and Systems, Chongqing 400054, People's Republic of China
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7
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Stern C, Twitto A, Snitkoff RZ, Fleger Y, Saha S, Boddapati L, Jain A, Wang M, Koski KJ, Deepak FL, Ramasubramaniam A, Naveh D. Enhancing Light-Matter Interactions in MoS 2 by Copper Intercalation. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008779. [PMID: 33955078 DOI: 10.1002/adma.202008779] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2020] [Revised: 02/21/2021] [Indexed: 06/12/2023]
Abstract
The intercalation of layered compounds opens up a vast space of new host-guest hybrids, providing new routes for tuning the properties of materials. Here, it is shown that uniform and continuous layers of copper can be intercalated within the van der Waals gap of bulk MoS2 resulting in a unique Cu-MoS2 hybrid. The new Cu-MoS2 hybrid, which remains semiconducting, possesses a unique plasmon resonance at an energy of ≈1eV, giving rise to enhanced optoelectronic activity. Compared with high-performance MoS2 photodetectors, copper-enhanced devices are superior in their spectral response, which extends into the infrared, and also in their total responsivity, which exceeds 104 A W-1 . The Cu-MoS2 hybrids hold promise for supplanting current night-vision technology with compact, advanced multicolor night vision.
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Affiliation(s)
- Chen Stern
- Faculty of Engineering, Bar-Ilan University, Ramat-Gan, 52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel
| | - Avraham Twitto
- Faculty of Engineering, Bar-Ilan University, Ramat-Gan, 52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel
| | - Rifael Z Snitkoff
- Faculty of Engineering, Bar-Ilan University, Ramat-Gan, 52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel
| | - Yafit Fleger
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel
| | - Sabyasachi Saha
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Avenida Mestre José Veiga s/n, Braga, 4715-330, Portugal
- Electron Microscopy Group, Defence Metallurgical Research Laboratory (DMRL), Hyderabad, 500058, India
| | - Loukya Boddapati
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Avenida Mestre José Veiga s/n, Braga, 4715-330, Portugal
| | - Akash Jain
- Department of Chemical Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Mengjing Wang
- Department of Chemistry, University of California Davis, Davis, CA, 95616, USA
| | - Kristie J Koski
- Department of Chemistry, University of California Davis, Davis, CA, 95616, USA
| | - Francis Leonard Deepak
- Nanostructured Materials Group, International Iberian Nanotechnology Laboratory, Avenida Mestre José Veiga s/n, Braga, 4715-330, Portugal
| | - Ashwin Ramasubramaniam
- Department of Mechanical and Industrial Engineering, University of Massachusetts, Amherst, MA, 01003, USA
| | - Doron Naveh
- Faculty of Engineering, Bar-Ilan University, Ramat-Gan, 52900, Israel
- Institute for Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat-Gan, 52900, Israel
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8
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Gerlitz I, Fiegenbaum‐Raz M, Bar‐Sadan M, Cohen H, Ismach A, Rosen BA. Catalytic Hydrogen Evolution Reaction Enhancement on Vertically Aligned MoS
2
by Synergistic Addition of Silver and Palladium. ChemElectroChem 2020. [DOI: 10.1002/celc.202001121] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Affiliation(s)
- Itai Gerlitz
- Department of Materials Science and Engineering Tel Aviv University Ramat Aviv 69978001 Israel
| | - Mor Fiegenbaum‐Raz
- Department of Materials Science and Engineering Tel Aviv University Ramat Aviv 69978001 Israel
| | - Maya Bar‐Sadan
- Department of Chemistry Ben-Gurion University of the Negev Beer-Sheva 8410501 Israel
| | - Hagai Cohen
- Department of Chemical Research Support Weizmann Institute of Science Rehovot 76100 Israel
| | - Ariel Ismach
- Department of Materials Science and Engineering Tel Aviv University Ramat Aviv 69978001 Israel
| | - Brian A. Rosen
- Department of Materials Science and Engineering Tel Aviv University Ramat Aviv 69978001 Israel
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9
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Bolhuis M, Hernandez-Rueda J, van Heijst SE, Tinoco Rivas M, Kuipers L, Conesa-Boj S. Vertically-oriented MoS 2 nanosheets for nonlinear optical devices. NANOSCALE 2020; 12:10491-10497. [PMID: 32377653 DOI: 10.1039/d0nr00755b] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Transition metal dichalcogenides such as MoS2 represent promising candidates for building blocks of ultra-thin nanophotonic devices. For such applications, vertically-oriented MoS2 (v-MoS2) nanosheets could be advantageous as compared to conventional horizontal MoS2 (h-MoS2) given that their inherent broken symmetry would favor an enhanced nonlinear response. However, the current lack of a controllable and reproducible fabrication strategy for v-MoS2 limits the exploration of this potential. Here we present a systematic study of the growth of v-MoS2 nanosheets based on the sulfurization of a pre-deposited Mo-metal seed layer. We demonstrate that the sulfurization process at high temperatures is driven by the diffusion of sulfur from the vapor-solid interface to the Mo seed layer. Furthermore, we verify an enhanced nonlinear response in the resulting v-MoS2 nanostructures as compared to their horizontal counterparts. Our results represent a stepping stone towards the fabrication of low-dimensional TMD-based nanostructures for versatile nonlinear nanophotonic devices.
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Affiliation(s)
- M Bolhuis
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands.
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10
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Wang M, Ko TJ, Shawkat MS, Han SS, Okogbue E, Chung HS, Bae TS, Sattar S, Gil J, Noh C, Oh KH, Jung Y, Larsson JA, Jung Y. Wafer-Scale Growth of 2D PtTe 2 with Layer Orientation Tunable High Electrical Conductivity and Superior Hydrophobicity. ACS APPLIED MATERIALS & INTERFACES 2020; 12:10839-10851. [PMID: 32043876 DOI: 10.1021/acsami.9b21838] [Citation(s) in RCA: 19] [Impact Index Per Article: 4.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Platinum ditelluride (PtTe2) is an emerging semimetallic two-dimensional (2D) transition-metal dichalcogenide (TMDC) crystal with intriguing band structures and unusual topological properties. Despite much devoted efforts, scalable and controllable synthesis of large-area 2D PtTe2 with well-defined layer orientation has not been established, leaving its projected structure-property relationship largely unclarified. Herein, we report a scalable low-temperature growth of 2D PtTe2 layers on an area greater than a few square centimeters by reacting Pt thin films of controlled thickness with vaporized tellurium at 400 °C. We systematically investigated their thickness-dependent 2D layer orientation as well as its correlated electrical conductivity and surface property. We unveil that 2D PtTe2 layers undergo three distinct growth mode transitions, i.e., horizontally aligned holey layers, continuous layer-by-layer lateral growth, and horizontal-to-vertical layer transition. This growth transition is a consequence of competing thermodynamic and kinetic factors dictated by accumulating internal strain, analogous to the transition of Frank-van der Merwe (FM) to Stranski-Krastanov (SK) growth in epitaxial thin-film models. The exclusive role of the strain on dictating 2D layer orientation has been quantitatively verified by the transmission electron microscopy (TEM) strain mapping analysis. These centimeter-scale 2D PtTe2 layers exhibit layer orientation tunable metallic transports yielding the highest value of ∼1.7 × 106 S/m at a certain critical thickness, supported by a combined verification of density functional theory (DFT) and electrical measurements. Moreover, they show intrinsically high hydrophobicity manifested by the water contact angle (WCA) value up to ∼117°, which is the highest among all reported 2D TMDCs of comparable dimensions and geometries. Accordingly, this study confirms the high material quality of these emerging large-area 2D PtTe2 layers, projecting vast opportunities employing their tunable layer morphology and semimetallic properties from investigations of novel quantum phenomena to applications in electrocatalysis.
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Affiliation(s)
- Mengjing Wang
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Tae-Jun Ko
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Mashiyat Sumaiya Shawkat
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Emmanuel Okogbue
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Tae-Sung Bae
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Shahid Sattar
- Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE 97187, Sweden
| | - Jaeyoung Gil
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - Chanwoo Noh
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - Kyu Hwan Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - YounJoon Jung
- Department of Chemistry, Seoul National University, Seoul 08826, South Korea
| | - J Andreas Larsson
- Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE 97187, Sweden
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
- Department of Materials Science and Engineering, University of Central Florida, Orlando, Florida 32826, United States
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11
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Development of a SnS Film Process for Energy Device Applications. APPLIED SCIENCES-BASEL 2019. [DOI: 10.3390/app9214606] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Tin monosulfide (SnS) is a promising p-type semiconductor material for energy devices. To realize the device application of SnS, studies on process improvement and film characteristics of SnS is needed. Thus, we developed a new film process using atomic layer deposition (ALD) to produce SnS films with high quality and various film characteristics. First, a process for obtaining a thick SnS film was studied. An amorphous SnS2 (a-SnS2) film with a high growth rate was deposited by ALD, and a thick SnS film was obtained using phase transition of a-SnS2 film by vacuum annealing. Subsequently, we investigated the effect of seed layer on formation of SnS film to verify the applicability of SnS to various devices. Separately deposited crystalline SnS and SnS2 thin films were used as seed layer. The SnS film with a SnS seed showed small grain size and high film density from the low surface energy of the SnS seed. In the case of the SnS film using a SnS2 seed, volume expansion occurred by vertically grown SnS grains due to a lattice mismatch with the SnS2 seed. The obtained SnS film using the SnS2 seed exhibited a large reactive site suitable for ion exchange.
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12
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Sojková M, Siffalovic P, Babchenko O, Vanko G, Dobročka E, Hagara J, Mrkyvkova N, Majková E, Ižák T, Kromka A, Hulman M. Carbide-free one-zone sulfurization method grows thin MoS 2 layers on polycrystalline CVD diamond. Sci Rep 2019; 9:2001. [PMID: 30765759 PMCID: PMC6375934 DOI: 10.1038/s41598-018-38472-9] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/02/2018] [Accepted: 12/28/2018] [Indexed: 11/16/2022] Open
Abstract
The last few decades faced on the fabrication of advanced engineering materials involving also different composites. Here, we report on the fabrication of few-layer molybdenum disulfide on top of thin polycrystalline diamond substrates with a high specific surface area. In the method, pre-deposited molybdenum coatings were sulfurized in a one-zone furnace at ambient pressure. As-prepared MoS2 layers were characterized by several techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We found out that the initial thickness of Mo films determined the final c-axis crystallographic orientation of MoS2 layer as previously observed on other substrates. Even though it is well-known that Mo diffuses into diamond at elevated temperatures, the competing sulfurization applied effectively suppressed the diffusion and a chemical reaction between molybdenum and diamond. In particular, a Mo2C layer does not form at the interface between the Mo film and diamond substrate. The combination of diamond high specific surface area along with a controllable layer orientation might be attractive for applications, such as water splitting or water disinfection.
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Affiliation(s)
- Michaela Sojková
- Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04, Bratislava, Slovakia.
| | - Peter Siffalovic
- Institute of Physics, SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovakia
| | - Oleg Babchenko
- Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04, Bratislava, Slovakia
| | - Gabriel Vanko
- Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04, Bratislava, Slovakia
| | - Edmund Dobročka
- Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04, Bratislava, Slovakia
| | - Jakub Hagara
- Institute of Physics, SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovakia
| | - Nada Mrkyvkova
- Institute of Physics, SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovakia
| | - Eva Majková
- Institute of Physics, SAS, Dúbravská cesta 9, 845 11, Bratislava, Slovakia
| | - Tibor Ižák
- Institute of Physics AS CR, Cukrovarnícka 10, 162 00, Praha 6, Czech Republic
| | - Alexander Kromka
- Institute of Physics AS CR, Cukrovarnícka 10, 162 00, Praha 6, Czech Republic
| | - Martin Hulman
- Institute of Electrical Engineering, SAS, Dúbravská cesta 9, 841 04, Bratislava, Slovakia
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13
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Sojková M, Vegso K, Mrkyvkova N, Hagara J, Hutár P, Rosová A, Čaplovičová M, Ludacka U, Skákalová V, Majková E, Siffalovic P, Hulman M. Tuning the orientation of few-layer MoS2 films using one-zone sulfurization. RSC Adv 2019; 9:29645-29651. [PMID: 35531524 PMCID: PMC9071904 DOI: 10.1039/c9ra06770a] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2019] [Accepted: 09/13/2019] [Indexed: 11/21/2022] Open
Abstract
Schematic representation of the GIWAXS measurements on HA and VA MoS2 layers.
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Affiliation(s)
| | - Karol Vegso
- Institute of Physics
- SAS
- 84511 Bratislava
- Slovakia
- Centre for Advanced Materials Application
| | - Nada Mrkyvkova
- Institute of Physics
- SAS
- 84511 Bratislava
- Slovakia
- Centre for Advanced Materials Application
| | | | - Peter Hutár
- Institute of Electrical Engineering
- SAS
- 84104 Bratislava
- Slovakia
| | - Alica Rosová
- Institute of Electrical Engineering
- SAS
- 84104 Bratislava
- Slovakia
| | | | - Ursula Ludacka
- University of Vienna
- Faculty of Physics
- 1090 Vienna
- Austria
| | - Viera Skákalová
- STU Centre for Nanodiagnostics
- 81243 Bratislava
- Slovak Republic
- University of Vienna
- Faculty of Physics
| | - Eva Majková
- Institute of Physics
- SAS
- 84511 Bratislava
- Slovakia
- Centre for Advanced Materials Application
| | - Peter Siffalovic
- Institute of Physics
- SAS
- 84511 Bratislava
- Slovakia
- Centre for Advanced Materials Application
| | - Martin Hulman
- Institute of Electrical Engineering
- SAS
- 84104 Bratislava
- Slovakia
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