Ferroelastic domain identification in BiFeO3 crystals using Raman spectroscopy

Unexpected Phonon Behaviour in BiFexCr1-xO3, a Material System Different from Its BiFeO3 and BiCrO3 Parents

The dielectric function and the bandgap of BiFe0.5Cr0.5O3 thin films were determined from spectroscopic ellipsometry and compared with that of the parent compounds BiFeO3 and BiCrO3. The bandgap value of BiFe0.5Cr0.5O3 is lower than that of BiFeO3 and BiCrO3, due to an optical transition at ~2.27 eV attributed to a charge transfer excitation between the Cr and Fe ions. This optical transition enables new phonon modes which have been investigated using Raman spectroscopy by employing multi-wavelengths excitation. The appearance of a new Raman mode at ~670 cm-1 with a strong intensity dependence on the excitation line and its higher order scattering activation was found for both BiFe0.5Cr0.5O3 thin films and BiFexCr1-xO3 polycrystalline bulk samples. Furthermore, Raman spectroscopy was also used to investigate temperature induced structural phase transitions in BiFe0.3Cr0.7O3.

Effect of polarization rotation on the optical and photovoltaic properties of BiFeO3thin films

Visible-light-active ferroelectric materials are gaining increasing attention due to the unique ferroelectric photovoltaic effect. To boost the light harvesting capability, vast research is devoted to band gap engineering by chemical substitutions, regardless of the side effect on ferroelectric polarization. Here, we focus on how polar order affects the optical and photovoltaic properties. Using BiFeO₃as the model system, we induce the polarization rotation by A-site La substitution, which results in continuous reduction of optical anisotropy of the samples, as revealed by the concerted optical characterizations. This further causes the decrease of angular dependence of ferroelectric photovoltaic effect on the light polarization. The results demonstrate the inner connection of the ferroelectric polarization and optical anisotropy via the lattice degree of freedom.

Anomalous circular bulk photovoltaic effect in BiFeO3 thin films with stripe-domain pattern

Multiferroic bismuth ferrite, BiFeO₃, offers a vast landscape to study the interplay between different ferrroic orders. Another aspect which is equally exciting, and yet underutilized, is the possibility of large-scale ordering of domains. Along with symmetry-driven bulk photovoltaic effect, BiFeO₃ presents opportunities to conceptualize novel light-based devices. In this work, we investigate the evolution of the bulk photovoltaic effect in BiFeO₃ thin films with stripe-domain pattern as the polarization of light is modulated from linear to elliptical to circular. The open-circuit voltages under circularly polarized light exceed ± 25 V. The anomalous character of the effect arises from the contradiction with the analytical assessment involving tensorial analysis. The assessment highlights the need for a domain-specific interaction of light which is further analyzed with spatially-resolved Raman measurements. Appropriate positioning of electrodes allows observation of a switch-like photovoltaic effect, i.e., ON and OFF state, by changing the helicity of circularly polarized light.

The authors study the evolution of the bulk photovoltaic effect in BiFeO₃ thin films with stripe-domains as the polarization of light is modulated from linear to circular. A relationship between the anomalous photo-response and differential light-domain interaction is established.

Raman scattering yields cubic crystal grain orientation

The paper proposes a fully optical method for determination of a cubic crystal grain orientation in a sample inspected by a Raman microscope. The method is based on a universal and strong polarisation anisotropy of the Raman scattering by doubly degenerate optic phonon modes and it only requires a standard Raman microscope equipped with a polarisation analysis. Explicit formulas for the orientation of the crystal grain are derived. The feasibility of the approach is demonstrated by comparing grain orientations in a polycrystalline cubic lacunar spinel GaV₄S₈ determined independently using electron backscatter diffraction and Raman scattering methods.

Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

Low field magnetic saturation and forming-free resistive switching behavior in non-magnetic modified room temperature multiferroic BiFeO₃ thin film.