Dark-exciton valley dynamics in transition metal dichalcogenide alloy monolayers

Low-Frequency Raman Study of Large-Area Twisted Bilayers of WS2 Stacked by an Etchant-Free Transfer Method

Monolayer transition metal dichalcogenides have strong intracovalent bonding. When stacked in multilayers, however, weak van der Waals interactions dominate interlayer mechanical coupling and, thus, influence their lattice vibrations. This study presents the frequency evolution of interlayer phonons in twisted WS2 bilayers, highly subject to the twist angle. The twist angle between the layers is controlled to modulate the spacing between the layers, which, in turn, affects the interlayer coupling that is probed by Raman spectroscopy. The shifts of high-frequency E2g1 (Γ) and A1g (Γ) phonon modes and their frequency separations are dependent on the twist angle, reflecting the correlation between the interlayer mechanical coupling and twist angle. In this work, we fabricated large-area, twisted bilayer WS2 with a clean interface with controlled twist angles. Polarized Raman spectroscopy identified new interlayer modes, which were not previously reported, depending on the twist angle. The appearance of breathing modes in Raman phonon spectra provides evidence of strong interlayer coupling in bilayer structures. We confirm that the twist angle can alter the exciton and trion dynamics of bilayers as indicated by the photoluminescence peak shift. These large-area controlled twist angle samples have practical applications in optoelectronic device fabrication and twistronics.

Ultrafast carrier dynamics in vanadium-doped MoS2 alloys

Substitutional doping is a most promising approach to manipulate the electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). In addition to inducing magnetism, vanadium (V) doping can lead to semiconductor-metal transition in TMDCs. However, the dynamics of charge carriers that governs the optoelectronic properties of doped TMDCs has been rarely revealed. In this work, we have investigated the dynamics of photocarriers in pristine and V-doped monolayer (ML) MoS2. Comparison of the transient absorption (TA) spectra of ML MoS2 with lightly (≤1%) and heavily (3.62%) V-doped MoS2 infers the induction of additional energy states in the doped materials giving rise to new low energy bleach features in the TA spectra. The quasiparticle band structure of MoS2 is found to disappear at sufficiently high V doping due to the presence of impurity bands. An attempt has also been made to study the manipulation of the carrier lifetime with V doping in MoS2. Our TA kinetic measurements suggest that the decay kinetics of the carriers becomes slower with increasing doping percentage and at a higher doping level the carriers survive for a much longer time compared to pristine MoS2. Furthermore, we have identified a new electronic transition (NET) in heavily V-doped MoS2 at high pump fluences.

Optoelectronic Properties of Atomically Thin MoxW(1-x)S2 Nanoflakes Probed by Spatially-Resolved Monochromated EELS

Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1-x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.

Reversible engineering of spin-orbit splitting in monolayer MoS2via laser irradiation under controlled gas atmospheres

Monolayer transition metal dichalcogenides, manifesting strong spin-orbit coupling combined with broken inversion symmetry, lead to coupling of spin and valley degrees of freedom. These unique features make them highly interesting for potential spintronic and valleytronic applications. However, engineering spin-orbit coupling at room temperature as demanded after device fabrication is still a great challenge for their practical applications. Here we reversibly engineer the spin-orbit coupling of monolayer MoS2 by laser irradiation under controlled gas environments, where the spin-orbit splitting has been effectively regulated within 140 meV to 200 meV. Furthermore, the photoluminescence intensity of the B exciton can be reversibly manipulated over 2 orders of magnitude. We attribute the engineering of spin-orbit splitting to the reduction of binding energy combined with band renormalization, originating from the enhanced absorption coefficient of monolayer MoS2 under inert gases and subsequently the significantly boosted carrier concentrations. Reflectance contrast spectra during the engineering stages provide unambiguous proof to support our interpretation. Our approach offers a new avenue to actively control the spin-orbit splitting in transition metal dichalcogenide materials at room temperature and paves the way for designing innovative spintronic devices.

Engineering the Electronic, Thermoelectric, and Excitonic Properties of Two-Dimensional Group-III Nitrides through Alloying for Optoelectronic Devices (B1-xAlxN, Al1-xGaxN, and Ga1-xInxN)

Recently, two-dimensional (2D) group-III nitride semiconductors such as h-BN, h-AlN, h-GaN, and h-InN have attracted attention because of their exceptional electronic, optical, and thermoelectric properties. It has also been demonstrated, theoretically and experimentally, that properties of 2D materials can be controlled by alloying. In this study, we performed density functional theory (DFT) calculations to investigate 2D B_1-xAl_xN, Al_1-xGa_xN, and Ga_1-xIn_xN alloyed structures. We also calculated the thermoelectric properties of these structures using Boltzmann transport theory based on DFT and the optical properties using the GW method and the Bethe-Salpeter equation. We find that by changing the alloying concentration, the band gap and exciton binding energies of each structure can be tuned accordingly, and for certain concentrations, a high thermoelectric performance is reported with strong dependence on the effective mass of the given alloyed monolayer. In addition, the contribution of each e-h pair is explained by investigating the e-h coupling strength projected on the electronic band structure, and we find that the exciton binding energy decreases with increase in sequential alloying concentration. With the ability to control such properties by alloying 2D group-III nitrides, we believe that this work will play a crucial role for experimentalists and manufacturers focusing on next-generation electronic, optoelectronic, and thermoelectric devices.

Robust room temperature emissions of trion in darkish WSe2monolayers: effects of dark neutral and charged excitonic states

Owing to nonzero charge and spin degrees of freedom, trions offer unprecedented tunability and open new paths for applications in devices based on 2D semiconductors. However, in monolayer WSe2, the trion photoluminescence is commonly detected only at low temperatures and vanishes at room temperature, which undermines practical applications. To unveil how to overcome this obstacle, we have developed a comprehensive theory to probe the impact of different excitonic channels on the trion emission in WSe2monolayers, which combinesab initiotight-binding formalism, Bethe-Salpeter equation and a set of coupled rate equations to describe valley dynamics of excitonic particles. Through a systematic study in which new scattering channels are progressively included, we found that, besides the low electron density, strong many-body correlations between bright and dark excitonic states quenches the trion emission in WSe2. Therefore, the reduction of scatterings from bright to dark states is required to achieve trion emission at room temperature for experimentally accessible carrier concentrations.

Linear and nonlinear optical probing of various excitons in 2D inorganic-organic hybrid structures

Nonlinear optical properties, such as two-(or multi-) photon absorption (2PA), are of special interest for technologically important applications in fast optical switching, in vivo imaging and so on. Highly intense infrared ultrashort pulses probe deep into samples and reveal several underlying structural perturbations (inter-layer distortions, intra-layer crumpling) and also provide information about new excited states and their relaxation. Naturally self-assembled inorganic-organic multiple quantum wells (IO-MQWs) show utility from room-temperature exciton emission features (binding energies ~200–250 meV). These Mott type excitons are highly sensitive to the self-assembly process, inorganic network distortions, thickness and inter-layer distortions of these soft two-dimensional (2D) and weak van der Waal layered hybrids. We demonstrate strong room-temperature nonlinear excitation intensity dependent two-photon absorption induced exciton photoluminescence (2PA-PL) from these IO-MQWs, excited by infrared femtosecond laser pulses. Strongly confined excitons show distinctly different one- and two-photon excited photoluminescence energies: from free-excitons (2.41 eV) coupled to the perfectly aligned MQWs and from energy down-shifted excitons (2.33 eV) that originate from the locally crumpled layered architecture. High intensity femtosecond induced PL from one-photon absorption (1PA-PL) suggests saturation of absorption and exciton-exciton annihilation, with typical reduction in PL radiative relaxation times from 270 ps to 190 ps upon increasing excitation intensities. From a wide range of IR excitation tuning, the origin of 2PA-PL excitation is suggested to arise from exciton dark states which extend below the bandgap. Observed two-photon absorption coefficients (β ~75 cm/GW) and two-photon excitation cross-sections (η₂σ₂ ~ 110GM), further support the evidence for 2PA excitation origin. Both 1PA- and 2PA-PL spatial mappings over large areas of single crystal platelets demonstrate the co-existence of both free and deep-level crumpled excitons with some traces of defect-induced trap state emission. We conclude that the two-photon absorption induced PL is highly sensitive to the self-assembly process of few to many mono layers, the crystal packing and deep level defects. This study paves a way to tailor the nonlinear properties of many 2D material classes. Our results thus open new avenues for exploring fundamental phenomena and novel optoelectronic applications using layered inorganic-organic and other metal organic frameworks.

Synthesis, Structural, Linear, and Nonlinear Optical Studies of Inorganic-Organic Hybrid Semiconductors (R-C6H4CHCH3NH3)2PbI4, (R = CH3, Cl)

Synthesis, crystal structure, and optical properties of two-dimensional (2D) layered structurally slightly different inorganic-organic (IO) hybrid semiconductors (R-C₆H₄C₂H₄NH₃)₂PbI₄ (R = CH₃, Cl) are presented. They are naturally self-assembled systems where two (RNH₃)⁺ moieties are sandwiched between two infinitely extended 2D layers of the [PbI₆]^4- octahedral network and treated as natural IO multiple quantum wells. While the former compound crystallizes into an orthorhombic system in the Cmc2₁ space group, the latter crystallizes into a monoclinic system in the space group P2₁/c. As a thin film, they are well-oriented along the (l00) direction. Both single crystals and thin films show strong room-temperature Mott type exciton features that are highly sensitive to the self-assembly and crystal packing. Linear (one-photon) and nonlinear (two-photon) optical probing of single crystals for exciton photoluminescence imaging and spectral spatial mapping provide deep insight into the layered re-arrangement and structural crumpling due to organic conformation. The strongly confined excitons, within the lowest band gap of inorganic, show distinctly different one- and two-photon excited photoluminescence peaks: free excitons from perfectly aligned 2D self-assembly and energy down-shifted excitons originated from the locally crumpled layered arrangement. Their structural aspects are successfully presented with proper correlation that emphasize various differences in physical and optical properties associated between these novel IO hybrids.