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Das A, Kumar H, Hariharan S, Thampi SP, Chandiran AK, Basavaraj MG. Conducting Gold Nanoparticle Films via Sessile Drop Evaporation. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:2510-2518. [PMID: 38284381 DOI: 10.1021/acs.langmuir.3c02542] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2024]
Abstract
The deposit patterns obtained from the evaporation of drops containing insoluble solute particles are vital for several technologies, including inkjet printing and optical and electronic device manufacturing. In this work, we consider the evaporation of an aqueous reaction mixture typically used for gold nanoparticle (AuNP) synthesis. The patterns obtained from the evaporation-driven assembly of in situ generated AuNPs are studied using optical microscopy and SEM analyses. The evaporation of drops withdrawn at different reaction times is found to significantly influence the distribution of AuNPs in the dried patterns. The evolution of the deposit patterns is also explored by drying multiple drops on the solid substrate, wherein a drop of a fresh reaction mixture is introduced over the deposit pattern left by the evaporation of the drop dispensed at an earlier time. Using quantitative image analysis, we show that the interparticle separation between the AuNPs in the dried patterns left on the solid substrate decreases when the number of drops is increased. We find optimal conditions to achieve solid-supported AuNP films, wherein the particles are in close physical contact, leading to a conducting deposit. The current through the AuNP deposit is found to increase with increase in the number of drops due to evaporation-driven self-assembly of AuNPs into branch-like structures with reduced interparticle separation. In addition, we also show that it is possible to produce conducting AuNP deposits by drying multiple drops withdrawn from the same reaction mixture. The evaporation-driven assembly of the in situ grown nanoparticles from a reaction mixture presented in this work can be further exploited in optical and electronic device fabrication.
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Affiliation(s)
- Abinash Das
- Polymer Engineering and Colloid Science Lab (PECS Lab), Department of Chemical Engineering, Indian Institute of Technology-Madras, Chennai 600036, India
| | - Hemant Kumar
- Polymer Engineering and Colloid Science Lab (PECS Lab), Department of Chemical Engineering, Indian Institute of Technology-Madras, Chennai 600036, India
| | - Sankar Hariharan
- Polymer Engineering and Colloid Science Lab (PECS Lab), Department of Chemical Engineering, Indian Institute of Technology-Madras, Chennai 600036, India
| | - Sumesh P Thampi
- Polymer Engineering and Colloid Science Lab (PECS Lab), Department of Chemical Engineering, Indian Institute of Technology-Madras, Chennai 600036, India
| | - Aravind Kumar Chandiran
- Solar Energy Research Group, Department of Chemical Engineering, Indian Institute of Technology Madras, Adyar, Chennai 600036, India
| | - Madivala G Basavaraj
- Polymer Engineering and Colloid Science Lab (PECS Lab), Department of Chemical Engineering, Indian Institute of Technology-Madras, Chennai 600036, India
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Chen JW, Yang S, Li CH, Huang YY, Chen CH, Yang CC. Mesh size control in forming an Ag/AgO nano-network structure for transparent conducting application. NANOTECHNOLOGY 2022; 33:135201. [PMID: 34905734 DOI: 10.1088/1361-6528/ac4305] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Accepted: 12/14/2021] [Indexed: 06/14/2023]
Abstract
The variation behaviors of the morphology, transmission, and sheet resistance of the surface Ag/AgO nano-network (NNW) structures fabricated under different illumination conditions and with different Ag deposition thicknesses and thermal annealing temperatures in forming initial Ag nanoparticles (NPs) are studied. Generally, an NNW structure with a smaller mesh size or a denser branch distribution has a lower transmission and a lower sheet resistance level. Under the fabrication condition of a broader illumination spectrum, a lower thermal annealing temperature, or a thicker Ag deposition, we can obtain an NNW structure of a smaller mesh size. The mesh size of an NNW structure is basically controlled by the seed density of Brownian tree (BT) at the beginning of light illumination. A BT seed can be formed through a stronger local localized surface plasmon resonance for accelerating Ag oxidation in a certain region. Once an Ag/AgO BT seed is formed, the surrounding Ag NPs are reorganized to form the branches of a BT. Multiple BTs are connected to form a large-area NNW structure, which can serve as a transparent conductor. Under the fabrication conditions of a broader illumination spectrum, 3 nm Ag deposition, and 100 °C thermal annealing, we can implement an NNW structure to achieve ∼1.15μm in mesh size, ∼90 Ω sq-1in sheet resistance, and 93%-77% in transmittance within the wavelength range between 370 and 700 nm.
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Affiliation(s)
- Jia-Wei Chen
- Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Shaobo Yang
- Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Chia-Hao Li
- Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Yang-Yi Huang
- Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - Chen-Hua Chen
- Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
| | - C C Yang
- Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
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