Substrate mediated nitridation of niobium into superconducting Nb2N thin films for phase slip study

Super High-Concentration Si and N Doping of CVD Diamond Film by Thermal Decomposition of Silicon Nitride Substrate

The high-concentration N doping of diamond film is still a challenge since nitrogen is limited during diamond growth. In this work, a novel method combined with the thermal decomposition of silicon nitride was proposed to form the activated N and Si components in the reactor gas that surrounded the substrate, with which the high-concentration N and Si doping of diamond film was performed. Meanwhile, graphene oxide (GO) particles were also employed as an adsorbent to further increase the concentration of the N element in diamond film by capturing the more decomposed N components. All the as-deposited diamond films were characterized by scanning electron microscopy, energy dispersive spectroscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. For the pure diamond film with a growth time of 0.5 h, the N and Si concentrations were 20.78 and 41.21 at%, respectively. For the GO-diamond film, they reached 47.47 and 21.66 at%, which set a new record for super high-concentration N doping of diamond film. Hence, thermal decomposition for the substrate can be regarded as a potential and alternative method to deposit the chemical vapor deposition (CVD) diamond film with high-concentration N, which be favorable for the widespread application of diamond in the electric field.

Complex Phase-Fluctuation Effects Correlated with Granularity in Superconducting NbN Nanofilms

Superconducting nanofilms are tunable systems that can host a 3D-2D dimensional crossover leading to the Berezinskii-Kosterlitz-Thouless (BKT) superconducting transition approaching the 2D regime. Reducing the dimensionality further, from 2D to quasi-1D superconducting nanostructures with disorder, can generate quantum and thermal phase slips (PS) of the order parameter. Both BKT and PS are complex phase-fluctuation phenomena of difficult experiments. We characterized superconducting NbN nanofilms thinner than 15 nm, on different substrates, by temperature-dependent resistivity and current-voltage (I-V) characteristics. Our measurements evidence clear features related to the emergence of BKT transition and PS events. The contemporary observation in the same system of BKT transition and PS events, and their tunable evolution in temperature and thickness was explained as due to the nano-conducting paths forming in a granular NbN system. In one of the investigated samples, we were able to trace and characterize the continuous evolution in temperature from quantum to thermal PS. Our analysis established that the detected complex phase phenomena are strongly related to the interplay between the typical size of the nano-conductive paths and the superconducting coherence length.

Surface passivation induced a significant enhancement of superconductivity in layered two-dimensional MSi2N4 (M = Ta and Nb) materials

Two-dimensional (2D) transition metal di-nitrides (TMN₂) have been arousing great interest for their unique mechanic, electronic, optoelectronic, and magnetic properties. The recent successful growth of monolayer MSi₂N₄ (M = Mo and W) further motivates us to explore new physics and unusual properties behind this family. By using first-principles calculations and Bardeen-Cooper-Schrieffer theory, we predicted the existence of the superconductivity in single-layer (SL) 1T- and 1H-TaN₂ with superconducting transition temperatures (T_c) of ∼0.86 and 1.3 K. Specifically, the T_c could be greatly enhanced to ∼24.6 K by passivating the TaN₂ monolayer with Si-N bilayers. Furthermore, the superconductivity could be increased to ∼30.4 K via substituting lighter Nb for Ta. This enhancement of superconductivity mainly stems from the softer vibration modes consisting of in-plane Ta/Nb vibrations mixed with Si-xy vibrations. The superconductivity can be further tuned by applying external strains and carrier doping. This enhancement strategy of surface passivation and light atom substitution would suggest a new platform for 2D superconductors and provide an instructive pathway for next-generation nanoelectronics.

A robust nitridation technique for fabrication of disordered superconducting TiN thin films featuring phase slip events

Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing of Ti/Si₃N₄ based metal/substrate assembly is the key to produce majority phase TiN accompanied by TiSi₂ & elemental Si as minority phases. The method itself introduces different level of disorder intrinsically by tuning the amount of the non-superconducting minority phases that are controlled by annealing temperature (T_a) and the film thickness. The superconducting critical temperature (T_c) strongly depends on T_a and the maximum T_c obtained from the demonstrated technique is about 4.8 K for the thickness range ~ 12 nm and above. Besides, the dynamics of IVCs get modulated by the appearance of intermediated resistive steps for decreased T_a and the steps get more prominent for reduced thickness. Further, the deviation in the temperature dependent critical current (I_c) from the Ginzburg–Landau theoretical limit varies strongly with the thickness. Finally, the T_c, intermediate resistive steps in the IVCs and the depairing current are observed to alter in a similar fashion with T_a and the thickness indicating the robustness of the synthesis process to fabricate disordered nitride-based superconductor.