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Xu Z, Bi J, Liu M, Zhang Y, Chen B, Zhang Z. TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory. MICROMACHINES 2023; 14:2207. [PMID: 38138376 PMCID: PMC10745870 DOI: 10.3390/mi14122207] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2023] [Revised: 11/24/2023] [Accepted: 12/01/2023] [Indexed: 12/24/2023]
Abstract
Ultra-Low-Power Non-Volatile Memory (UltraRAM), as a promising storage device, has attracted wide research attention from the scientific community. Non-volatile data retention in combination with switching at ≤2.6 V is achieved through the use of the extraordinary 2.1 eV conduction band offsets of InAs/AlSb and a triple-barrier resonant tunnelling structure. Along these lines, in this work, the structure, storage mechanism, and improvement strategies of UltraRAM were systematically investigated to enhance storage window clarity and speed performance. First, the basic structure and working principle of UltraRAM were introduced, and its comparative advantages over traditional memory devices were highlighted. Furthermore, through the validation of the band structure and storage mechanism, the superior performance of UltraRAM, including its low operating voltage and excellent non-volatility, was further demonstrated. To address the issue of the small storage window, an improvement strategy was proposed by reducing the thickness of the channel layer to increase the storage window. The feasibility of this strategy was validated by performing a series of simulation-based experiments. From our analysis, a significant 80% increase in the storage window after thinning the channel layer was demonstrated, providing an important foundation for enhancing the performance of UltraRAM. Additionally, the data storage capability of this strategy was examined under the application of short pulse widths, and a data storage operation with a 10 ns pulse width was successfully achieved. In conclusion, valuable insights into the application of UltraRAM in the field of non-volatile storage were provided. Our work paves the way for further optimizing the memory performance and expanding the functionalities of UltraRAM.
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Affiliation(s)
- Ziming Xu
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jinshun Bi
- University of Chinese Academy of Sciences, Beijing 100049, China
- Institute of Microelectronics of Tianjin Binhai New Area, Tianjin 300308, China
| | - Mengxin Liu
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
- Beijing Zhongke New Micro Technology Development Co., Ltd., Beijing 100029, China
| | - Yu Zhang
- Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100085, China
- Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems, Jincheng 048026, China
- Jincheng Research Institute of Opto-Machatronics Industry, Jincheng 048026, China
| | - Baihong Chen
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zijian Zhang
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China; (Z.X.)
- University of Chinese Academy of Sciences, Beijing 100049, China
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Abramkin DS, Petrushkov MO, Bogomolov DB, Emelyanov EA, Yesin MY, Vasev AV, Bloshkin AA, Koptev ES, Putyato MA, Atuchin VV, Preobrazhenskii VV. Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:910. [PMID: 36903788 PMCID: PMC10005039 DOI: 10.3390/nano13050910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/31/2023] [Revised: 02/26/2023] [Accepted: 02/26/2023] [Indexed: 06/18/2023]
Abstract
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs' formation by molecular beam epitaxy on both matched GaP and artificial GaP/Si substrates were determined. An almost complete plastic relaxation of the elastic strain in SAQDs was reached. The strain relaxation in the SAQDs on the GaP/Si substrates does not lead to a reduction in the SAQDs luminescence efficiency, while the introduction of dislocations into SAQDs on the GaP substrates induced a strong quenching of SAQDs luminescence. Probably, this difference is caused by the introduction of Lomer 90°-dislocations without uncompensated atomic bonds in GaP/Si-based SAQDs, while threading 60°-dislocations are introduced into GaP-based SAQDs. It was shown that GaP/Si-based SAQDs have an energy spectrum of type II with an indirect bandgap and the ground electronic state belonging to the X-valley of the AlP conduction band. The hole localization energy in these SAQDs was estimated equal to 1.65-1.70 eV. This fact allows us to predict the charge storage time in the SAQDs to be as long as >>10 years, and it makes GaSb/AlP SAQDs promising objects for creating universal memory cells.
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Affiliation(s)
- Demid S. Abramkin
- Laboratory of Molecular-Beam Epitaxy of A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia
| | - Mikhail O. Petrushkov
- Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Dmitrii B. Bogomolov
- Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Eugeny A. Emelyanov
- Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Mikhail Yu. Yesin
- Laboratory of Molecular-Beam Epitaxy of Elementary Semiconductors and A3B5 Compounds, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Andrey V. Vasev
- Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Alexey A. Bloshkin
- Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia
- Laboratory of Nonequilibrium Semiconductor Systems, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Eugeny S. Koptev
- Laboratory of Nonequilibrium Semiconductor Systems, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Department of Automation and Computer Engineering, Novosibirsk State Technical University, Novosibirsk 630073, Russia
| | - Mikhail A. Putyato
- Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
| | - Victor V. Atuchin
- Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Research and Development Department, Kemerovo State University, Kemerovo 650000, Russia
- R&D Center “Advanced Electronic Technologies”, Tomsk State University, Tomsk 634034, Russia
- Department of Industrial Machinery Design, Novosibirsk State Technical University, Novosibirsk 630073, Russia
| | - Valery V. Preobrazhenskii
- Laboratory of Physical Bases of Semiconductor Heterostructures Epitaxy, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
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Naqi M, Kwon N, Jung SH, Pujar P, Cho HW, Cho YI, Cho HK, Lim B, Kim S. High-Performance Non-Volatile InGaZnO Based Flash Memory Device Embedded with a Monolayer Au Nanoparticles. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1101. [PMID: 33923237 PMCID: PMC8146410 DOI: 10.3390/nano11051101] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/25/2021] [Revised: 04/22/2021] [Accepted: 04/22/2021] [Indexed: 11/16/2022]
Abstract
Non-volatile memory (NVM) devices based on three-terminal thin-film transistors (TFTs) have gained extensive interest in memory applications due to their high retained characteristics, good scalability, and high charge storage capacity. Herein, we report a low-temperature (<100 °C) processed top-gate TFT-type NVM device using indium gallium zinc oxide (IGZO) semiconductor with monolayer gold nanoparticles (AuNPs) as a floating gate layer to obtain reliable memory operations. The proposed NVM device exhibits a high memory window (ΔVth) of 13.7 V when it sweeps from -20 V to +20 V back and forth. Additionally, the material characteristics of the monolayer AuNPs (floating gate layer) and IGZO film (semiconductor layer) are confirmed using transmission electronic microscopy (TEM), atomic force microscopy (AFM), and x-ray photoelectron spectroscopy (XPS) techniques. The memory operations in terms of endurance and retention are obtained, revealing highly stable endurance properties of the device up to 100 P/E cycles by applying pulses (±20 V, duration of 100 ms) and reliable retention time up to 104 s. The proposed NVM device, owing to the properties of large memory window, stable endurance, and high retention time, enables an excellent approach in futuristic non-volatile memory technology.
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Affiliation(s)
| | | | | | | | | | | | | | - Byungkwon Lim
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (M.N.); (N.K.); (S.H.J.); (P.P.); (H.W.C.); (Y.I.C.); (H.K.C.)
| | - Sunkook Kim
- Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Korea; (M.N.); (N.K.); (S.H.J.); (P.P.); (H.W.C.); (Y.I.C.); (H.K.C.)
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