Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Ultra-broadband near-perfect metamaterial absorber for photovoltaic applications

An ingenious double-grating metamaterial-based ultrathin-broadband absorber consisting of AlGaAs-Ge-GaAs on a titanium film operating in the visible to infrared wavelength was designed in this work. This structure is capable of overcoming the Shockley-Queisser (SQ) limit and the tunneling junction effect of tandem solar cells. Our comprehensive study revealed the structure's absorption mechanism using the finite-difference time-domain (FDTD) technique, which exhibited excellent short-circuit current density and high absorption. Our proposed ultrathin structure of 410 nm thickness provided a high average absorption of 82.2% and 99.7% under unpolarized and TM-polarized light for a wavelength range of 450-2000 nm, respectively. Additionally, we observed high incidence angle tolerability under the plane wave and thermal stability over time for our proposed grating structure. The performance analysis of our proposed structure as an absorber layer of a solar cell revealed its high power conversion efficiency (PCE) of 31.7% with an excellent short-circuit current density of 47.1 mA cm-2 for AM 1.5 G solar irradiance. The double-grating metamaterial absorber structure has enormous potential for diverse applications such as solar harvesting, thermoelectric generation, and photodetection.

Strong enhancement of direct transition photoluminescence at room temperature for highly tensile-strained Ge decorated using 5 nm gold nanoparticles

Strain engineering of germanium has recently attracted tremendous research interest. The primary goal of this approach is to exploit mechanical strain to tune the electrical and optical properties of Ge to ultimately achieve an on-chip light source compatible with silicon technology. Additionally, this can result in enhanced electrical performance for high-speed optoelectronic applications. In this paper, we demonstrate the formation of highly tensile-strained Ge islands grown on a pre-patterned (110) GaAs substrate using a depth controlled nanoindentation process. Results show that a biaxial tensile strain, up to ∼2%, can be transferred from the mechanically stamped substrate to Ge islands by optimizing the parameters of the nanoindentation process. We verified our measurements by observing the islands' photoluminescence (PL) emission properties. A strong emission at room-temperature was observed around the wavelength of 1.9 µm (650 meV). This strain-induced redshift of the PL spectra is consistent with theoretical predictions, revealing a direct Ge bandgap formation. Furthermore, we demonstrate a significant 6.5x enhancement in the PL emission signal of the direct-transition when the Ge islands are decorated by 5 nm gold nanoparticles. This is attributed to a longer optical path length interaction and a plasmonic induced high-field enhancement which increases the light absorption in the Ge islands. Furthermore, results show that GNPs can significantly modulate the energy band structure and the carrier's transportation at the nanoscale metal-germanium Schottky interface. This maskless physical approach can offer a pathway towards a practical CMOS-compatible integrated laser. Additionally, it opens possibilities for designing innovative optoelectronic devices.