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Zheng S, Chen Z, Duley WW, Wu YA, Peng P, Zhou YN. Engineering the defect distribution in ZnO nanorods through laser irradiation. NANOTECHNOLOGY 2023; 34:495703. [PMID: 37643586 DOI: 10.1088/1361-6528/acf4a3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2023] [Accepted: 08/28/2023] [Indexed: 08/31/2023]
Abstract
In recent years, defect engineering has shown great potential to improve the properties of metal oxide nanomaterials for various applications thus received extensive investigations. While traditional techniques mostly focus on controlling the defects during the synthesis of the material, laser irradiation has emerged as a promising post-deposition technique to further modulate the properties of defects yet there is still limited information. In this article, defects such as oxygen vacancies are tailored in ZnO nanorods through nanosecond (ns) laser irradiation. The relation between laser parameters and the temperature rise in the ZnO due to laser heating was established based on the observation in the SEM and the simulation. Raman spectra indicated that the concentration of the oxygen vacancies in the ZnO is temperature-dependent and can be controlled by changing the laser fluence and exposure time. This is also supported by the absorption spectra and the photoluminescence spectra of ZnO NRs irradiated under these conditions. On the other hand, the distribution of the oxygen vacancies was studied by XPS depth profiling, and it was confirmed that the surface-to-bulk ratio of the oxygen vacancies can be modulated by varying the laser fluence and exposure time. Based on these results, four distinctive regimes containing different ratios of surface-to-bulk oxygen vacancies have been identified. Laser-processed ZnO nanorods were also used as the catalyst for the photocatalytic degradation of rhodamine B (RhB) dye to demonstrate the efficacy of this laser engineering technique.
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Affiliation(s)
- Shuo Zheng
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
- Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Zuolong Chen
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
- Waterloo Institute of Nanotechnology, Materials Interface Foundry, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Walter W Duley
- Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
- Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Yimin A Wu
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
- Waterloo Institute of Nanotechnology, Materials Interface Foundry, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Peng Peng
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
- Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
| | - Y Norman Zhou
- Department of Mechanical and Mechatronics Engineering, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
- Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario, N2L 3G1, Canada
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Mani D, Sundar Manoharan S, Johnsy Arputhavalli G, Sriram G, Jebasingh S. A study on morphology dependent nanostructured ZnO thin films: an efficient gas sensing response for acetaldehyde. INORG CHEM COMMUN 2023. [DOI: 10.1016/j.inoche.2023.110471] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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Abstract
Ion implantation is usually used for semiconductor doping and isolation, which creates defects in semiconductors. ZnO is a promising semiconductor and has a variety of applications, such as for use in transparent electronics, optoelectronics, chemical and biological sensors, etc. In this work, ZnO nanorods were grown on Si (100) substrates by the process of chemical bath deposition and then annealed in an O2 atmosphere at 350 and 600 °C for 1 h to introduce different kinds of defects. The as-grown nanorods and the nanorods that annealed were irradiated simultaneously by 180 keV H+ ions at room temperature with a total dose of 8.0×1015 ions/cm2. The radiation effects of the H+ ions, effects of the pre-existed defects on the radiation resistance, and the related mechanisms under irradiation were investigated. The crystal and optical properties of the ZnO nanorods after H+ ion irradiation were found to depend upon the pre-existed defects in the nanorods. The existence of the appropriate concentration of oxygen interstitials in the ZnO nanorods caused them to have good radiation resistance. The thermal effects of irradiation played an important role in the property variation of nanorods. The temperature of the nanorods under 180 keV H+ ion bombardment was around 350 °C.
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Amoah PK, Lin P, Baumgart H, Franklin RR, Obeng YS. Broadband dielectric spectroscopic detection of volatile organic compounds with ZnO nanorod gas sensors. JOURNAL OF PHYSICS D: APPLIED PHYSICS 2021; 54:10.1088/1361-6463/abd3ce. [PMID: 34092809 PMCID: PMC8174144 DOI: 10.1088/1361-6463/abd3ce] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Metal-oxide (MO) semiconductor gas sensors based on chemical resistivity necessarily involve making electrical contacts to the sensing materials. These contacts are imperfect and introduce errors into the measurements. In this paper, we demonstrate the feasibility of using contactless broadband dielectric spectroscopy (BDS)-based metrology in gas monitoring that avoids distortions in the reported resistivity values due to probe use, and parasitic errors (i.e. tool-measurand interactions). Specifically, we show how radio frequency propagation characteristics can be applied to study discrete processes on MO sensing material, such as zinc oxide (i.e. ZnO) surfaces, when exposed to a redox-active gas. Specifically, we have used BDS to investigate the initial oxidization of ZnO gas sensing material in air at temperatures below 200 °C, and to show that the technique affords new mechanistic insights that are inaccessible with the traditional resistance-based measurements.
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Affiliation(s)
- Papa K Amoah
- Department of Electrical and Computer Engineering, Old Dominion University, Norfolk VA 23529, United States of America
- Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, VA 23606, United States of America
| | - Pengtao Lin
- Department of Electrical and Computer Engineering, Old Dominion University, Norfolk VA 23529, United States of America
- Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, VA 23606, United States of America
| | - Helmut Baumgart
- Department of Electrical and Computer Engineering, Old Dominion University, Norfolk VA 23529, United States of America
- Applied Research Center at Thomas Jefferson National Accelerator Laboratories, 12050 Jefferson Avenue, Suite 721, Newport News, VA 23606, United States of America
| | - Rhonda R Franklin
- Department of Electrical and Computer Engineering, University of Minnesota, 200 Union Street SE, Minneapolis, MN 55455, United States of America
| | - Yaw S Obeng
- Physical Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, United States of America
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