Kumar A, Sanger A, Kang SB, Chandra R. Interface Engineering-Driven Room-Temperature Ultralow Gas Sensors with Elucidating Sensing Performance of Heterostructure Transition Metal Dichalcogenide Thin Films.
ACS Sens 2023;
8:3824-3835. [PMID:
37769211 DOI:
10.1021/acssensors.3c01290]
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Abstract
In this report, we investigate the room-temperature gas sensing performance of heterostructure transition metal dichalcogenide (MoSe2/MoS2, WS2/MoS2, and WSe2/MoS2) thin films grown over a silicon substrate using a pulse laser deposition technique. The sensing response of the aforementioned sensors to a low concentration range of NO2, NH3, H2, CO, and H2S gases in air has been assessed at room temperature. The obtained results reveal that the heterojunctions of metal dichalcogenide show a drastic change in gas sensing performance compared to the monolayer thin films at room temperature. Nevertheless, the WSe2/MoS2-based sensor was found to have an excellent selectivity toward NO2 gas with a particularly high sensitivity of 10 ppb. The sensing behavior is explained on the basis of a change in electrical resistance as well as carrier localization prospects. Favorably, by developing a heterojunction of diselenide and disulfide nanomaterials, one may find a simple way of improving the sensing capabilities of gas sensors at room temperature.
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