Verification of Type-A and Type-B-HC Blinking Mechanisms of Organic-Inorganic Formamidinium Lead Halide Perovskite Quantum Dots by FLID Measurements

Conversion of Photoluminescence Blinking Types in Single Colloidal Quantum Dots

Almost all colloidal quantum dots (QDs) exhibit undesired photoluminescence (PL) blinking, which poses a significant obstacle to their use in numerous luminescence applications. An in-depth study of the blinking behavior, along with the associated mechanisms, can provide critical opportunities for fabricating high-quality QDs for diverse applications. Here the blinking of a large series of colloidal QDs is investigated with different surface ligands, particle sizes, shell thicknesses, and compositions. It is found that the blinking behavior of single alloyed CdSe/ZnS QDs with a shell thickness of up to 2 nm undergoes an irreversible conversion from Auger-blinking to band-edge carrier blinking (BC-blinking). Contrastingly, single perovskite QDs with particle sizes smaller than their Bohr diameters exhibit reversible conversion between BC-blinking and more pronounced Auger-blinking. Changes in the effective trapping sites under different excitation conditions are found to be responsible for the blinking type conversions. Additionally, changes in shell thickness and particle size of QDs have a significant effect on the blinking type conversions due to altered wavefunction overlap between excitons and effective trapping sites. This study elucidates the discrepancies in the blinking behavior of various QD samples observed in previous reports and provides deeper understanding of the mechanisms underlying diverse types of blinking.

Highly Efficient MAPbI3-Based Quantum Dots Exhibiting Unusual Nonblinking Single Photon Emission at Room Temperature

Highly emissive semiconductor nanocrystals, or so-called quantum dots (QDs) possess a variety of applications from displays and biology labeling, to quantum communication and modern security. Though ensembles of QDs have already shown very high photoluminescent quantum yields (PLQYs) and have been widely utilized in current optoelectronic products, QDs that exhibit high absorption cross-section, high emission intensity, and, most important, nonblinking behavior at single-dot level have long been desired and not yet realized at room temperature. In this work, infrared-emissive MAPbI3-based halide perovskite QDs is demonstrated. These QDs not only show a ≈100% PLQY at the ensemble level but also, surprisingly, at the single-dot level, display an extra-large absorption cross-section up to 1.80 × 10-12 cm2 and non-blinking single photon emission with a high single photon purity of 95.3%, a unique property that is extremely rare among all types of quantum emitters operated at room temperature. An in-depth analysis indicates that neither trion formation nor band-edge carrier trapping is observed in MAPbI3 QDs, resulting in the suppression of intensity blinking and lifetime blinking. Fluence-dependent transient absorption measurements reveal that the coexistence of non-blinking behavior and high single photon purity in these perovskite QDs results from a significant repulsive exciton-exciton interaction, which suppresses the formation of biexciton, and thus greatly reduces photocharging. The robustness of these QDs is confirmed by their excellent stability under continuous 1 h electron irradiation in high-resolution transmission electron microscope inspection. It is believed that these results mark an important milestone in realizing nonblinking single photon emission in semiconductor QDs.

Weakly Confined Organic-Inorganic Halide Perovskite Quantum Dots as High-Purity Room-Temperature Single Photon Sources

Colloidal perovskite quantum dots (PQDs) have emerged as highly promising single photon emitters for quantum information applications. Presently, most strategies have focused on leveraging quantum confinement to increase the nonradiative Auger recombination (AR) rate to enhance single-photon (SP) purity in all-inorganic CsPbBr3 QDs. However, this also increases the fluorescence intermittency. Achieving high SP purity and blinking mitigation simultaneously remains a significant challenge. Here, we transcend this limitation with room-temperature synthesized weakly confined hybrid organic-inorganic perovskite (HOIP) QDs. Superior single photon purity with a low g(2)(0) < 0.07 ± 0.03 and a nearly blinking-free behavior (ON-state fraction >95%) in 11 nm FAPbBr3 QDs are achieved at room temperature, attributed to their long exciton lifetimes (τX) and short biexciton lifetimes (τXX). The significance of the organic A-cation is further validated using the mixed-cation FAxCs1-xPbBr3. Theoretical calculations utilizing a combination of the Bethe-Salpeter (BSE) and k·p approaches point toward the modulation of the dielectric constants by the organic cations. Importantly, our findings provide valuable insights into an additional lever for engineering facile-synthesized room-temperature PQD single photon sources.

Biexciton dynamics in halide perovskite nanocrystals

Lead halide perovskite nanocrystals are attracting considerable interest as next-generation optoelectronic materials. Optical responses of nanocrystals are determined by excitons and exciton complexes such as trions and biexcitons. Understanding of their dynamics is indispensable for the optimal design of optoelectronic devices and the development of new functional properties. Here, we summarize the recent advances on the exciton and biexciton photophysics in lead halide perovskite nanocrystals revealed by femtosecond time-resolved spectroscopy and single-dot spectroscopy. We discuss the impact of the biexciton dynamics on controlling and improving the optical gain.

Phase-Stable and Highly Luminescent CsPbI3 Perovskite Nanocrystals with Suppressed Photoluminescence Blinking

Despite their low band gap, the utility of CsPbI₃ nanocrystals (NCs) in solar photovoltaic and optoelectronic applications is rather limited because of their phase instability and photoluminescence (PL) intermittency. Herein we show that phase-pure, monodispersed, stable and highly luminescent CsPbI₃ NCs can be obtained by tweaking the conventional hot-injection method employing NH₄I as an additional precursor. Single-particle studies show a significant suppression of PL blinking. Among all NCs studied, 60% exhibit only high-intensity ON states with a narrow distribution of intensity. The remaining 40% of NCs exhibit a much wider distribution of PL intensity with a significant contribution of low-intensity OFF states. Excellent characteristics of these CsPbI₃ NCs are shown to be the result of NH₄⁺ replacing some surface Cs⁺ of an iodide-rich surface of the NCs. These phase-stable and highly luminescent CsPbI₃ NCs with significantly suppressed PL blinking can be useful single-photon emitters and promising materials for optoelectronic and solar photovoltaic applications.

Real-Time Blinking Suppression of Perovskite Quantum Dots by Halide Vacancy Filling

Despite the excellent optoelectronic properties of halide perovskites, the ionic and electronic defects adversely affect the stability and durability of perovskites and their devices. These defects, intrinsic or produced by environmental factors such as oxygen, moisture, or light, not only cause chemical reactions that disintegrate the structure and properties of perovskites but also induce undesired photoluminescence blinking to perovskite quantum dots and nanocrystals. Blinking is also caused by the nonradiative Auger processes in the photocharged quantum dots or nanocrystals. Herein, we find real-time suppression of halide vacancy-assisted nonradiative exciton recombination and photoluminescence blinking in MAPbBr₃ and MAPbI₃ perovskite quantum dots by filling the vacancies using halide precursors (MABr and MAI). Also, halide vacancy filling increases the photoluminescence quantum efficiencies and lifetimes of the quantum dots. We estimate the rates of halide vacancy-assisted nonradiative recombination at 1 × 10⁸ s^-1 for MAPbBr₃ and 1.9 × 10⁹ s^-1 for MAPbI₃ quantum dots. The real-time blinking suppression using the halide precursors and statistical analysis of the ON/OFF blinking time reveal that the halide vacancies contribute to the type-A blinking through charging and discharging. Conversely, the blinking of the quantum dots after halide vacancy filling is dominated by the type-B mechanism.

Blinking Mechanisms and Intrinsic Quantum-Confined Stark Effect in Single Methylammonium Lead Bromide Perovskite Quantum Dots

Lead halide perovskite quantum dots (QDs) are promising materials for next-generation photoelectric devices because of their low preparation costs and excellent optoelectronic properties. In this study, the blinking mechanisms and the intrinsic quantum-confined Stark effect (IQCSE) in single organic-inorganic hybrid CH₃ NH₃ PbBr₃ perovskite QDs using single-dot photoluminescence (PL) spectroscopy is investigated. The PL quantum yield-recombination rates distribution map allows the identification of different PL blinking mechanisms and their respective contributions to the PL emission behavior. A strong correlation between the excitation power and the blinking mechanisms is reported. Most single QDs exhibit band-edge carrier blinking under a low excitation photon fluence. While under a high excitation photon fluence, different proportions of Auger-blinking emerge in their PL intensity trajectories. In particular, significant IQCSEs in the QDs that exhibit more pronounced Auger-blinking are observed. Based on these findings, an Auger-induced IQCSE model to explain the observed IQCSE phenomena is observed.