Ultra-compact high efficiency and low crosstalk optical interconnection structures based on inverse designed nanophotonic elements

Sharp bend and large FSR ring resonator based on the free-form curves on a thin-film lithium niobate platform

Sharp bends are crucial for large-scale and high-density photonics integration on thin-film lithium niobate platform. In this study, we demonstrate low-loss (<0.05 dB) and sharp bends (Reff = 30 µm) using free-form curves with a 200-nm-thick slab and a rib height of 200 nm on x-cut lithium niobate. Employing the same design method, we successfully realize a compact fully-etched ring resonator with a remarkably large free spectral range of 10.36 nm experimentally. Notably, the equivalent radius of the ring resonator is a mere 15 µm, with a loaded Q factor reaching 2.2 × 104.

High-speed 4 × 4 silicon photonic plasma dispersive switch, operating at the 2 µm waveband

The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-μm waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive 4 × 4 photonic switch operating at the 2-μm waveband with the highest switching speed. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 × 4 implementation, crosstalk below -15 dB and power consumption lower than 19.15 mW across all 16 optical paths are indicated. This result brings high-speed optical switching to the portfolio of devices at the promising waveband.

Low-loss, ultracompact n-adjustable waveguide bends for photonic integrated circuits

Countless waveguides have been designed based on four basic bends: circular bend, sine/cosine bend, Euler bend (developed in 1744) and Bezier bend (developed in 1962). This paper proposes an n-adjustable (NA) bend, which has superior properties compared to other basic bends. Simulations and experiments indicate that the NA bends can show lower losses than other basic bends by adjusting n values. The circular bend and Euler bend are special cases of the proposed NA bend as n equals 0 and 1, respectively. The proposed bend are promising candidates for low-loss compact photonic integrated circuits.

Inverse-designed ultra-compact high efficiency and low crosstalk optical interconnect based on waveguide crossing and wavelength demultiplexer

In this paper, we use the inverse design method to design an optical interconnection system composed of wavelength demultiplexer and the same direction waveguide crossing on silicon-on-insulator (SOI) platform. A 2.4 μm × 3.6 μm wavelength demultiplexer with an input wavelength of 1.3-1.6 μm is designed. When the target wavelength of the device is 1.4 μm, the insertion loss of the output port is - 0.93 dB, and there is - 18.4 dB crosstalk, in TE0 mode. The insertion loss of the target wavelength of 1.6 μm in TE0 mode is - 0.88 dB, and the crosstalk is - 19.1 dB. Then, we designed a same direction waveguide crossing, the footprint is only 2.4 μm × 3.6 μm, the insertion loss of the wavelength 1.4 μm and 1.6 μm in TE0 mode is - 0.99 dB and - 1 dB, and the crosstalk is - 12.14 dB and - 14.34 dB, respectively. Finally, an optical interconnect structure composed of two devices is used, which can become the most basic component of the optical interconnect network. In TE0 mode, the insertion loss of the output wavelength of 1.4 μm at the output port is - 1.3 dB, and the crosstalk is - 29.36 dB. The insertion loss of the output wavelength of 1.6 μm is - 1.39 dB, and the crosstalk is - 38.99 dB.

Silicon Integrated Nanophotonic Devices for On-Chip Multi-Mode Interconnects

Mode-division multiplexing (MDM) technology has drawn tremendous attention for its ability to expand the link capacity within a single-wavelength carrier, paving the way for large-scale on-chip data communications. In the MDM system, the signals are carried by a series of higher-order modes in a multi-mode bus waveguide. Hence, it is essential to develop on-chip mode-handling devices. Silicon-on-insulator (SOI) has been considered as a promising platform to realize MDM since it provides an ultra-high-index contrast and mature fabrication processes. In this paper, we review the recent progresses on silicon integrated nanophotonic devices for MDM applications. We firstly discuss the working principles and device configurations of mode (de)multiplexers. In the second section, we summarize the multi-mode routing devices, including multi-mode bends, multi-mode crossings and multi-mode splitters. The inverse-designed multi-mode devices are then discussed in the third section. We also provide a discussion about the emerging reconfigurable MDM devices in the fourth section. Finally, we offer our outlook of the development prospects for on-chip multi-mode photonics.