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Akhtar F, Dabrowski J, Lukose R, Wenger C, Lukosius M. Chemical Vapor Deposition Growth of Graphene on 200 mm Ge(110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge(110) and Ge(001). ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37479219 PMCID: PMC10401564 DOI: 10.1021/acsami.3c05860] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/23/2023]
Abstract
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm-1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm2/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction.
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Affiliation(s)
- Fatima Akhtar
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Jaroslaw Dabrowski
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Rasuole Lukose
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Christian Wenger
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- BTU Cottbus Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany
| | - Mindaugas Lukosius
- IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
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Wang Z, Zhu J, Zheng P, Shen H, Gao B, Ge J, Xu Y, Yan X, Zhan R, Yang Y, Jiang Y, Wu T. Near Room-Temperature Synthesis of Vertical Graphene Nanowalls on Dielectrics. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21348-21355. [PMID: 35482578 DOI: 10.1021/acsami.2c02381] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Vertical graphene nanowalls (VGNs) with excellent heat-transfer properties are promising to be applied in the thermal management of electronic devices. However, high growth temperature makes VGNs unable to be directly prepared on semiconductors and polymers, which limits the practical application of VGNs. In this work, the near room-temperature growth of VGNs was realized by utilizing the hot filament chemical vapor deposition method. Catalytic tantalum (Ta) filaments promote the decomposition of acetylene at ∼1600 °C. Density functional theory calculations proved that C2H* was the main active carbon cluster during VGN growth. The restricted diffusion of C2H* clusters induced the vertical growth of graphene nanoflakes on various substrates below 150 °C. The direct growth of VGNs successfully realized the excellent interfacial contact, and the thermal contact resistance could reach 3.39 × 10-9 m2·K·W-1. The temperature of electronic chips had a 6.7 °C reduction by utilizing directly prepared VGNs instead of thermal conductive tape as thermal-interface materials, indicating the great potential of VGNs to be directly prepared on electronic devices for thermal management.
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Affiliation(s)
- Zehui Wang
- Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
| | - Junkui Zhu
- Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
| | - Peiru Zheng
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, People's Republic of China
| | - Honglie Shen
- Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
| | - Boxiang Gao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Jiawei Ge
- Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
| | - Yajun Xu
- Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
| | - Xuejun Yan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Ruonan Zhan
- Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093, China
| | - Yan Yang
- Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, College of Materials Science & Technology, Nanjing University of Aeronautics & Astronautics, Nanjing 210016, China
| | - Yanyan Jiang
- Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061, People's Republic of China
| | - Tianru Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
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Cui G, Peng Z, Chen X, Cheng Y, Lu L, Cao S, Ji S, Qu G, Zhao L, Wang S, Wang S, Li Y, Ci H, Li M, Liu Z. Freestanding Graphene Fabric Film for Flexible Infrared Camouflage. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105004. [PMID: 34914865 PMCID: PMC8844486 DOI: 10.1002/advs.202105004] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 11/15/2021] [Indexed: 06/14/2023]
Abstract
Graphene films, fabricated by chemical vapor deposition (CVD) method, have exhibited superiorities in high crystallinity, thickness controllability, and large-scale uniformity. However, most synthesized graphene films are substrate-dependent, and usually fragile for practical application. Herein, a freestanding graphene film is prepared based on the CVD route. By using the etchable fabric substrate, a large-scale papyraceous freestanding graphene fabric film (FS-GFF) is obtained. The electrical conductivity of FS-GFF can be modulated from 50 to 2800 Ω sq-1 by tailoring the graphene layer thickness. Moreover, the FS-GFF can be further attached to various shaped objects by a simple rewetting manipulation with negligible changes of electric conductivity. Based on the advanced fabric structure, excellent electrical property, and high infrared emissivity, the FS-GFF is thus assembled into a flexible device with tunable infrared emissivity, which can achieve the adaptive camouflage ability in complicated backgrounds. This work provides an infusive insight into the fabrication of large-scale freestanding graphene fabric films, while promoting the exploration on the flexible infrared camouflage textiles.
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Affiliation(s)
- Guang Cui
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
| | - Zhe Peng
- Shandong Academy of Agricultural SciencesJinan250100P. R. China
| | - Xiaoyan Chen
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Yi Cheng
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
| | - Lin Lu
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Shubo Cao
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Sudong Ji
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Guoxin Qu
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Lu Zhao
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Shaokai Wang
- Ningbo Innovation Research InstituteBeihang UniversityNingbo315800China
| | - Shida Wang
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Yizhen Li
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Haina Ci
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
- College of EnergySoochow Institute for Energy and Materials InnovationS (SIEMIS)Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy TechnologiesSoochow UniversitySuzhou215006P. R. China
- School of Mechanical and Electrical EngineeringQingdao University of Science and TechnologyQingdao266061P. R. China
| | - Maoyuan Li
- Beijing System Design Institute of Mechanical‐Electrical EngineeringBeijing100871P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing100871P. R. China
- Beijing Graphene Institute (BGI)Beijing100095P. R. China
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Abstract
Graphene is a unique attractive material owing to its characteristic structure and excellent properties. To improve the preparation efficiency of graphene, reduce defects and costs, and meet the growing market demand, it is crucial to explore the improved and innovative production methods and process for graphene. This review summarizes recent advanced graphene synthesis methods including “bottom-up” and “top-down” processes, and their influence on the structure, cost, and preparation efficiency of graphene, as well as its peeling mechanism. The viability and practicality of preparing graphene using polymers peeling flake graphite or graphite filling polymer was discussed. Based on the comparative study, it is potential to mass produce graphene with large size and high quality using the viscoelasticity of polymers and their affinity to the graphite surface.
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Røst HI, Reed BP, Strand FS, Durk JA, Evans DA, Grubišić-Čabo A, Wan G, Cattelan M, Prieto MJ, Gottlob DM, Tănase LC, de Souza Caldas L, Schmidt T, Tadich A, Cowie BCC, Chellappan RK, Wells JW, Cooil SP. A Simplified Method for Patterning Graphene on Dielectric Layers. ACS APPLIED MATERIALS & INTERFACES 2021; 13:37510-37516. [PMID: 34328712 PMCID: PMC8365599 DOI: 10.1021/acsami.1c09987] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/29/2021] [Accepted: 07/13/2021] [Indexed: 06/13/2023]
Abstract
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
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Affiliation(s)
- Håkon I. Røst
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Benjamen P. Reed
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
| | - Frode S. Strand
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Joseph A. Durk
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
| | - D. Andrew Evans
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
| | - Antonija Grubišić-Čabo
- School
of Physics & Astronomy, Monash University, 1 Wellington Rd., Clayton, Victoria 3800, Australia
| | - Gary Wan
- School
of Physics, HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom
| | - Mattia Cattelan
- School
of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, United
Kingdom
| | - Mauricio J. Prieto
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Daniel M. Gottlob
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Liviu C. Tănase
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Lucas de Souza Caldas
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Thomas Schmidt
- Department
of Interface Science, Fritz-Haber-Institute
of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany
| | - Anton Tadich
- Australian
Synchrotron, 800 Blackburn
Rd., Clayton, Victoria 3168, Australia
| | - Bruce C. C. Cowie
- Australian
Synchrotron, 800 Blackburn
Rd., Clayton, Victoria 3168, Australia
| | - Rajesh Kumar Chellappan
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
| | - Justin W. Wells
- Center
for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
- Semiconductor
Physics, Department of Physics, University
of Oslo (UiO), NO-0371 Oslo, Norway
| | - Simon P. Cooil
- Department
of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom
- Semiconductor
Physics, Department of Physics, University
of Oslo (UiO), NO-0371 Oslo, Norway
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