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Raza M, Li X, Mao C, Liu F, He H, Wu W. A Polarization-Insensitive, Vanadium Dioxide-Based Dynamically Tunable Multiband Terahertz Metamaterial Absorber. MATERIALS (BASEL, SWITZERLAND) 2024; 17:1757. [PMID: 38673114 PMCID: PMC11051305 DOI: 10.3390/ma17081757] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/10/2024] [Revised: 04/03/2024] [Accepted: 04/06/2024] [Indexed: 04/28/2024]
Abstract
A tunable multiband terahertz metamaterial absorber, based on vanadium dioxide (VO2), is demonstrated. The absorber comprises a three-layer metal-insulator-metal (MIM) configuration with a split ring and slots of VO2 on the uppermost layer, a middle dielectric substrate based on silicon dioxide (SiO2), and a gold reflector on the back. The simulation results indicate that, when VO2 is in the metallic state, the proposed metamaterial exhibits nearly perfect absorption at six distinct frequencies. The design achieves an average absorption of 98.2%. The absorptivity of the metamaterial can be dynamically tuned from 4% to 100% by varying the temperature-controlled conductivity of VO2. The proposed metamaterial absorber exhibits the advantages of polarization insensitivity and maintains its absorption over 80% under different incident angle conditions. The underlying physical mechanism of absorption is explained through impedance matching theory, interference theory, and the distribution of electric fields. The ability to achieve multiband absorption with tunable characteristics makes the proposed absorber a promising candidate for applications in terahertz sensing, imaging, communication, and detection. The polarization insensitivity further enhances its practicality in various scenarios, allowing for versatile and reliable performance in terahertz systems.
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Affiliation(s)
- Mohsin Raza
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China; (M.R.); (X.L.); (C.M.); (F.L.)
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoman Li
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China; (M.R.); (X.L.); (C.M.); (F.L.)
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chenlu Mao
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China; (M.R.); (X.L.); (C.M.); (F.L.)
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fenghua Liu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China; (M.R.); (X.L.); (C.M.); (F.L.)
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hongbo He
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China; (M.R.); (X.L.); (C.M.); (F.L.)
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Weiping Wu
- Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China; (M.R.); (X.L.); (C.M.); (F.L.)
- State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, 390 Qinghe Road, Jiading District, Shanghai 201800, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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Bundel P, Wu GB, Chen BJ, Chan CH. Wideband circular polarizer for a photoconductive antenna. OPTICS LETTERS 2023; 48:3223-3226. [PMID: 37319067 DOI: 10.1364/ol.488037] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2023] [Accepted: 05/04/2023] [Indexed: 06/17/2023]
Abstract
We report a thin-film circular polarizer consisting of three metal-grid layers to be used with a photoconductive antenna (PCA) to generate terahertz (THz) circularly polarized (CP) radiation. The polarizer has a high transmission with a measured 3 dB axial-ratio bandwidth of 54.7% from 0.57 to 1 THz. We further developed a generalized scattering matrix approach to provide insight into the underlying physical mechanism of the polarizer. We revealed that the Fabry-Pérot-like multi-reflection among gratings enables the high-efficiency polarization conversion. The successful realization of the CP PCA can find widespread application, such as THz circular dichroism spectroscopy, THz Mueller imaging, and ultrahigh-speed THz wireless communications.
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Yang F, Pitchappa P, Wang N. Terahertz Reconfigurable Intelligent Surfaces (RISs) for 6G Communication Links. MICROMACHINES 2022; 13:285. [PMID: 35208409 PMCID: PMC8879315 DOI: 10.3390/mi13020285] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/14/2022] [Revised: 02/02/2022] [Accepted: 02/04/2022] [Indexed: 02/04/2023]
Abstract
The forthcoming sixth generation (6G) communication network is envisioned to provide ultra-fast data transmission and ubiquitous wireless connectivity. The terahertz (THz) spectrum, with higher frequency and wider bandwidth, offers great potential for 6G wireless technologies. However, the THz links suffers from high loss and line-of-sight connectivity. To overcome these challenges, a cost-effective method to dynamically optimize the transmission path using reconfigurable intelligent surfaces (RISs) is widely proposed. RIS is constructed by embedding active elements into passive metasurfaces, which is an artificially designed periodic structure. However, the active elements (e.g., PIN diodes) used for 5G RIS are impractical for 6G RIS due to the cutoff frequency limitation and higher loss at THz frequencies. As such, various tuning elements have been explored to fill this THz gap between radio waves and infrared light. The focus of this review is on THz RISs with the potential to assist 6G communication functionalities including pixel-level amplitude modulation and dynamic beam manipulation. By reviewing a wide range of tuning mechanisms, including electronic approaches (complementary metal-oxide-semiconductor (CMOS) transistors, Schottky diodes, high electron mobility transistors (HEMTs), and graphene), optical approaches (photoactive semiconductor materials), phase-change materials (vanadium dioxide, chalcogenides, and liquid crystals), as well as microelectromechanical systems (MEMS), this review summarizes recent developments in THz RISs in support of 6G communication links and discusses future research directions in this field.
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Affiliation(s)
| | - Prakash Pitchappa
- Institute of Microelectronics, Agency for Science, Technology and Research, Singapore 138634, Singapore;
| | - Nan Wang
- Institute of Microelectronics, Agency for Science, Technology and Research, Singapore 138634, Singapore;
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Photo-Excited Switchable Terahertz Metamaterial Polarization Converter/Absorber. CRYSTALS 2021. [DOI: 10.3390/cryst11091116] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
In this paper, a photo-excited switchable terahertz metamaterial (MM) polarization converter/absorber has been presented. The switchable structure comprises an orthogonal double split-ring resonator (ODSRR) and a metallic ground, separated by a dielectric spacer. The gaps of ODSRR are filled with semiconductor photoconductive silicon (Si), whose conductivity can be dynamically tuned by the incident pump beam with different power. From the simulated results, it can be observed that the proposed structure implements a wide polarization-conversion band in 2.01–2.56 THz with the conversion ratio of more than 90% and no pump beam power incident illuminating the structure, whereas two absorption peaks operate at 1.98 THz and 3.24 THz with the absorption rates of 70.5% and 94.2%, respectively, in the case of the maximum pump power. Equivalent circuit models are constructed for absorption states to provide physical insight into their operation. Meanwhile, the surface current distributions are also illustrated to explain the working principle. The simulated results show that this design has the advantage of the switchable performance afforded by semiconductor photoconductive Si, creating a path towards THz imaging, active switcher, etc.
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