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Atić A, Wang X, Vuković N, Stanojević N, Demić A, Indjin D, Radovanović J. Resonant Tunnelling and Intersubband Optical Properties of ZnO/ZnMgO Semiconductor Heterostructures: Impact of Doping and Layer Structure Variation. MATERIALS (BASEL, SWITZERLAND) 2024; 17:927. [PMID: 38399178 PMCID: PMC10890650 DOI: 10.3390/ma17040927] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2023] [Revised: 02/05/2024] [Accepted: 02/06/2024] [Indexed: 02/25/2024]
Abstract
ZnO-based heterostructures are up-and-coming candidates for terahertz (THz) optoelectronic devices, largely owing to their innate material attributes. The significant ZnO LO-phonon energy plays a pivotal role in mitigating thermally induced LO-phonon scattering, potentially significantly elevating the temperature performance of quantum cascade lasers (QCLs). In this work, we calculate the electronic structure and absorption of ZnO/ZnMgO multiple semiconductor quantum wells (MQWs) and the current density-voltage characteristics of nonpolar m-plane ZnO/ZnMgO double-barrier resonant tunnelling diodes (RTDs). Both MQWs and RTDs are considered here as two building blocks of a QCL. We show how the doping, Mg percentage and layer thickness affect the absorption of MQWs at room temperature. We confirm that in the high doping concentrations regime, a full quantum treatment that includes the depolarisation shift effect must be considered, as it shifts mid-infrared absorption peak energy for several tens of meV. Furthermore, we also focus on the performance of RTDs for various parameter changes and conclude that, to maximise the peak-to-valley ratio (PVR), the optimal doping density of the analysed ZnO/Zn88Mg12O double-barrier RTD should be approximately 1018 cm-3, whilst the optimal barrier thickness should be 1.3 nm, with a Mg mole fraction of ~9%.
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Affiliation(s)
- Aleksandar Atić
- School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 72, 11120 Belgrade, Serbia; (A.A.); (N.V.); (N.S.)
- Vinča Institute of Nuclear Sciences, National Institute of Republic of Serbia, University of Belgrade, Mike Petrovića Alasa 12-14, Vinča, 11351 Belgrade, Serbia
- Centre for Light-Based Research and Technologies Coherence, Mike Petrovića Alasa 12-14, 11351 Belgrade, Serbia
| | - Xizhe Wang
- School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, UK; (X.W.); (A.D.); (D.I.)
| | - Nikola Vuković
- School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 72, 11120 Belgrade, Serbia; (A.A.); (N.V.); (N.S.)
- Centre for Light-Based Research and Technologies Coherence, Mike Petrovića Alasa 12-14, 11351 Belgrade, Serbia
| | - Novak Stanojević
- School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 72, 11120 Belgrade, Serbia; (A.A.); (N.V.); (N.S.)
- Vlatacom Institute of High Technologies, Bulevar Milutina Milankovića 5, 11070 Belgrade, Serbia
| | - Aleksandar Demić
- School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, UK; (X.W.); (A.D.); (D.I.)
| | - Dragan Indjin
- School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, UK; (X.W.); (A.D.); (D.I.)
| | - Jelena Radovanović
- School of Electrical Engineering, University of Belgrade, Bulevar Kralja Aleksandra 72, 11120 Belgrade, Serbia; (A.A.); (N.V.); (N.S.)
- Centre for Light-Based Research and Technologies Coherence, Mike Petrovića Alasa 12-14, 11351 Belgrade, Serbia
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2
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Zafar H, Paredes B, Villegas J, Rasras M, Fernandes Pereira M. O-band TE- and TM-mode densely packed adiabatically bent waveguide arrays on the silicon-on-insulator platform. OPTICS EXPRESS 2023; 31:21389-21398. [PMID: 37381238 DOI: 10.1364/oe.493077] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Accepted: 05/24/2023] [Indexed: 06/30/2023]
Abstract
An efficient, dual-polarization silicon waveguide array with low insertion losses and negligible crosstalks for both TE and TM polarizations has been reported using S-shaped adiabatically bent waveguides. Simulation results for a single S-shaped bend show an insertion loss (IL) of ≤ 0.03 dB and ≤ 0.1 dB for the TE and TM polarizations, respectively, and TE and TM crosstalk values in the first neighboring waveguides at either side of the input waveguide are lower than -39 dB and -24 dB, respectively, over the wavelength range of 1.24 µm to 1.38 µm. The bent waveguide arrays exhibit a measured average TE IL of ≈ 0.1 dB, measured TE crosstalks in the first neighboring waveguides are ≤ -35 dB, at the 1310 nm communication wavelength. The proposed bent array can be made by using multiple cascaded S-shaped bends to transmit signals to all optical components in integrated chips.
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Bleotu PG, Mihai L, Sporea D, Sporea A, Straticiuc M, Burducea I. Impact of 3MeV Energy Proton Particles on Mid-IR QCLs. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:677. [PMID: 36839045 PMCID: PMC9965782 DOI: 10.3390/nano13040677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 02/05/2023] [Accepted: 02/06/2023] [Indexed: 06/18/2023]
Abstract
This paper reports the results obtained for a distributed-feedback quantum cascade laser (DFB-QCL) exposed to different fluences of proton particles: 1014, 1015 and 1016 p/cm2. Dedicated laboratory setups were developed to assess the irradiation-induced changes in this device. Multiple parameters defining the QCL performances were investigated prior to and following each irradiation step: (i) voltage-driving current; (ii) emitted optical power-driving current; (iii) central emitting wavelength-driving current; (iv) emitted spectrum-driving current; (v) transversal mode structure-driving current, maintaining the system operating temperature at 20 °C. The QCL system presented, before irradiation, two emission peaks: a central emission peak and a side peak. After proton irradiation, the QCL presented a spectral shift, and the ratio between the two peaks also changed. Even though, after irradiation, the tunning spectral range was reduced, at the end of the tests, the system was still functional.
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Affiliation(s)
- Petrişor Gabriel Bleotu
- National Institute for Laser, Plasma and Radiation Physics, CETAL, 077125 Magurele, Romania
- Horia Hulubei National Institute for R&D in Physics and Nuclear Engineering (IFIN-HH), 30 Reactorului St., 077125 Magurele, Romania
- Doctoral School of Physics, University of Bucharest, 077125 Magurele, Romania
- LULI-CNRS, CEA, Institut Polytechnique de Paris, Universite Sorbonne, Ecole Polytechnique, CEDEX, 91128 Palaiseau, France
| | - Laura Mihai
- National Institute for Laser, Plasma and Radiation Physics, CETAL, 077125 Magurele, Romania
| | - Dan Sporea
- National Institute for Laser, Plasma and Radiation Physics, CETAL, 077125 Magurele, Romania
| | - Adelina Sporea
- National Institute for Laser, Plasma and Radiation Physics, CETAL, 077125 Magurele, Romania
| | - Mihai Straticiuc
- Horia Hulubei National Institute for R&D in Physics and Nuclear Engineering (IFIN-HH), 30 Reactorului St., 077125 Magurele, Romania
| | - Ion Burducea
- Horia Hulubei National Institute for R&D in Physics and Nuclear Engineering (IFIN-HH), 30 Reactorului St., 077125 Magurele, Romania
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Vaks V, Anfertev V, Chernyaeva M, Domracheva E, Yablokov A, Maslennikova A, Zhelesnyak A, Baranov A, Schevchenko Y, Pereira MF. Sensing nitriles with THz spectroscopy of urine vapours from cancers patients subject to chemotherapy. Sci Rep 2022; 12:18117. [PMID: 36302930 PMCID: PMC9613899 DOI: 10.1038/s41598-022-22783-z] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Accepted: 10/19/2022] [Indexed: 12/30/2022] Open
Abstract
A THz nonstationary high-resolution spectrometer based on semiconductor superlattice multipliers is applied to investigate the dynamics of urine composition for cancer patients treated with chemotherapy. The molecular urine composition of healthy volunteers and cancer patients was compared and contrasted. We have found a set of nitriles that either appeared after chemotherapy or increased in content, which are expected as a result of bio-chemical damage to the liver. While no damage can be detected at this stage by existing clinical methods, the identified nitriles are candidates for further large-scale systematic testing towards markers for nephrotoxicity of chemotherapy at an early stage of the treatment, when conventional diagnostics cannot identify substantial organ damage. Comparing the metabolite concentration dynamics with side effects during chemotherapy might then help individuate patients prone to severe complications and correct the treatment. Our devices are game-changers for THz spectroscopy of liquids: they allow spanning four different frequency ranges for a general evaluation of most substances found in the liquid and selecting a spectral interval that bypasses the strong absorption lines from substances such as water and ammonia, which may otherwise mask the detection of the target metabolites.
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Affiliation(s)
- Vladimir Vaks
- grid.425081.a0000 0004 0638 0112Institute for Physics of Microstructures, Nizhny Novgorod, 603950 Russia ,grid.28171.3d0000 0001 0344 908XLobachevsky State University, Nizhny Novgorod, 603950 Russia
| | - Vladimir Anfertev
- grid.425081.a0000 0004 0638 0112Institute for Physics of Microstructures, Nizhny Novgorod, 603950 Russia
| | - Maria Chernyaeva
- grid.425081.a0000 0004 0638 0112Institute for Physics of Microstructures, Nizhny Novgorod, 603950 Russia ,grid.28171.3d0000 0001 0344 908XLobachevsky State University, Nizhny Novgorod, 603950 Russia
| | - Elena Domracheva
- grid.425081.a0000 0004 0638 0112Institute for Physics of Microstructures, Nizhny Novgorod, 603950 Russia
| | - Anton Yablokov
- grid.425081.a0000 0004 0638 0112Institute for Physics of Microstructures, Nizhny Novgorod, 603950 Russia
| | - Anna Maslennikova
- grid.28171.3d0000 0001 0344 908XLobachevsky State University, Nizhny Novgorod, 603950 Russia ,grid.416347.30000 0004 0386 1631Privolzhsky Research Medical University, Nizhny Novgorod, 603005 Russia
| | - Alla Zhelesnyak
- Nizhny Novgorod Regional Oncology Hospital, Nizhny Novgorod, 603000 Russia
| | - Alexei Baranov
- grid.121334.60000 0001 2097 0141Institute of Electronics and Systems (IES), University of Montpellier, UMR5214 CNRS/Université, Montpellier 2, 34095 Montpellier, France
| | - Yuliia Schevchenko
- grid.418095.10000 0001 1015 3316Institute of Physics, Czech Academy of Sciences, 18221 Prague, Czech Republic
| | - Mauro Fernandes Pereira
- grid.418095.10000 0001 1015 3316Institute of Physics, Czech Academy of Sciences, 18221 Prague, Czech Republic ,grid.440568.b0000 0004 1762 9729Department of Physics, Khalifa University of Science and Technology, 127788 Abu Dhabi, United Arab Emirates
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Pereira MF. Harmonic Generation in Biased Semiconductor Superlattices. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1504. [PMID: 35564213 PMCID: PMC9103809 DOI: 10.3390/nano12091504] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/19/2022] [Revised: 04/21/2022] [Accepted: 04/22/2022] [Indexed: 02/04/2023]
Abstract
Semiconductor superlattices are proven nanomaterials for THz nonlinear optics by means of high order harmonic generation. Seminal approaches leading to a perfectly antisymmetric current-voltage (I-V.) curve predict the generation of odd harmonics only in the absence of a bias. However, even harmonics at high orders have been detected in several experiments. Their generation has been explained by considering deviations from the current flow symmetry that break the exact antisymmetry of the I-V. curve. In this paper, we focus on another issue found experimentally that has also not been explained, namely the harmonic power output asymmetry from negative to positive applied bias. Once more, breaking the I-V. flow symmetry explains the experiments and leads to a further tool to design the power output of these materials. Furthermore, a new approach for the Boltzmann Equation under relaxation-rate approximation eliminates numerical difficulties generated by a previous theory. This leads to very efficient analytical expressions that can be used for both fundamental physics/optics/material sciences and realistic device development and simulations.
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Affiliation(s)
- Mauro Fernandes Pereira
- Department of Physics, Khalifa University of Science and Technology, Abu Dhabi 127788, United Arab Emirates;
- Institute of Physics, Czech Academy of Sciences, 18221 Prague, Czech Republic
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Feng W, Wei S, Zheng Y, Wang C, Cao J. Theoretical Analysis of Terahertz Frequency Multiplier Based on Semiconductor Superlattices. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:1114. [PMID: 35407230 PMCID: PMC9000275 DOI: 10.3390/nano12071114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2022] [Revised: 03/22/2022] [Accepted: 03/24/2022] [Indexed: 11/16/2022]
Abstract
We propose a terahertz frequency multiplier based on high order harmonic generation in a GaAs-based miniband superlattice driven by an electric field. The performance of the frequency multiplier is analyzed using the balance equation approach, which incorporates momentum and energy relaxation processes at different lattice temperatures. It is found that the generated high-order harmonic power is sensitive to temperature changes. The peak power appears around resonance between driving terahertz frequency and intrinsic Bloch frequency. In the presence of the magnetic field, the peak power shifts towards a stronger static electric field region. The simulated results about the dependence of the second and third harmonic powers on a DC electric field are in qualitative consistence with the experiments. The proposed terahertz frequency multiplier based on semiconductor superlattice, being compact and efficient, is provided as a good candidate for terahertz wave generation.
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Affiliation(s)
- Wei Feng
- School of Physics and Electronic Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013, China; (W.F.); (S.W.)
| | - Shuting Wei
- School of Physics and Electronic Engineering, Jiangsu University, 301 Xuefu Road, Zhenjiang 212013, China; (W.F.); (S.W.)
| | - Yonghui Zheng
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
- Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
| | - Chang Wang
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
- Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
| | - Juncheng Cao
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
- Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
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Dong J, Tomasino A, Balistreri G, You P, Vorobiov A, Charette É, Le Drogoff B, Chaker M, Yurtsever A, Stivala S, Vincenti MA, De Angelis C, Kip D, Azaña J, Morandotti R. Versatile metal-wire waveguides for broadband terahertz signal processing and multiplexing. Nat Commun 2022; 13:741. [PMID: 35136043 PMCID: PMC8826316 DOI: 10.1038/s41467-022-27993-7] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2021] [Accepted: 12/15/2021] [Indexed: 11/28/2022] Open
Abstract
Waveguides play a pivotal role in the full deployment of terahertz communication systems. Besides signal transporting, innovative terahertz waveguides are required to provide versatile signal-processing functionalities. Despite fundamental components, such as Bragg gratings, have been recently realized, they typically rely on complex hybridization, in turn making it extremely challenging to go beyond the most elementary functions. Here, we propose a universal approach, in which multiscale-structured Bragg gratings can be directly etched on metal-wires. Such an approach, in combination with diverse waveguide designs, allows for the realization of a unique platform with remarkable structural simplicity, yet featuring unprecedented signal-processing capabilities. As an example, we introduce a four-wire waveguide geometry, amenable to support the low-loss and low-dispersion propagation of polarization-division multiplexed terahertz signals. Furthermore, by engraving on the wires judiciously designed Bragg gratings based on multiscale structures, it is possible to independently manipulate two polarization-division multiplexed terahertz signals. This platform opens up new exciting perspectives for exploiting the polarization degree of freedom and ultimately boosting the capacity and spectral efficiency of future terahertz networks. Waveguides that can provide complex signal-processing functionalities while guiding terahertz signals are desired. Here, the authors report the independent processing of multiplexed signals by engineering the metal surface of a four-wire waveguide.
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Affiliation(s)
- Junliang Dong
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada.
| | - Alessandro Tomasino
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Giacomo Balistreri
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada.,Department of Engineering, University of Palermo, Viale delle Scienze, Palermo, 90128, Italy
| | - Pei You
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Anton Vorobiov
- Faculty of Electrical Engineering, Helmut Schmidt University, Holstenhofweg 85, Hamburg, 22043, Germany
| | - Étienne Charette
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Boris Le Drogoff
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Mohamed Chaker
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Aycan Yurtsever
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Salvatore Stivala
- Department of Engineering, University of Palermo, Viale delle Scienze, Palermo, 90128, Italy
| | - Maria A Vincenti
- Department of Information Engineering, University of Brescia, Via Branze 38, Brescia, 25123, Italy
| | - Costantino De Angelis
- Department of Information Engineering, University of Brescia, Via Branze 38, Brescia, 25123, Italy
| | - Detlef Kip
- Faculty of Electrical Engineering, Helmut Schmidt University, Holstenhofweg 85, Hamburg, 22043, Germany
| | - José Azaña
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada
| | - Roberto Morandotti
- Institut national de la recherche scientifique, Centre Énergie Matériaux Télécommunications, Varennes, QC, J3X 1P7, Canada.
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Combined Structural and Voltage Control of Giant Nonlinearities in Semiconductor Superlattices. NANOMATERIALS 2021; 11:nano11051287. [PMID: 34068279 PMCID: PMC8153262 DOI: 10.3390/nano11051287] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/26/2021] [Revised: 05/03/2021] [Accepted: 05/11/2021] [Indexed: 11/17/2022]
Abstract
Recent studies have predicted a strong increase in high harmonic emission in unbiased semiconductor superlattices due to asymmetric current flow. In parallel, an external static bias has led to orders of magnitude control of high harmonics. Here, we study how this control can affect the operation of superlattice multipliers in a range of input frequencies and powers delivered by commercially available GHz sources. We show that the strongly nonlinear behavior can lead to a very complex scenario. Furthermore, it is natural to ask what happens when we combine both asymmetry and voltage control effects. This question is answered by the simulations presented in this study. The efficiency of high-order even harmonics is increased by the combined effects. Furthermore, the development of ‘petals’ in high-order emission is shown to be more easily achieved, opening the possibility to very interesting fundamental physics studies and more efficient devices for the GHz–THz range.
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