Flexible thermoelectric films formed using integrated nanocomposites with single-wall carbon nanotubes and Bi2Te3 nanoplates via solvothermal synthesis

High-Performance MoS2/SWCNT Composite Films for a Flexible Thermoelectric Power Generator

Single-walled carbon nanotube (SWCNT)-based thermoelectric materials have been extensively studied in the field of flexible wearable devices due to their high flexibility and excellent electrical conductivity (σ). However, poor Seebeck coefficient (S) and high thermal conductivity limit their thermoelectric application. In this work, free-standing MoS₂/SWCNT composite films with improved thermoelectric performance were fabricated by doping SWCNTs with MoS₂ nanosheets. The results demonstrated that the energy filtering effect at the MoS₂/SWCNT interface increased the S of composites. In addition, the σ of composites was also improved due to the reason that S-π interaction between MoS₂ and SWCNTs made good contact between MoS₂ and SWCNTs and improved carrier transport. Finally, the obtained MoS₂/SWCNT showed a maximum power factor of 131.9 ± 4.5 μW m^-1 K^-2 at room temperature with a σ of 680 ± 6.7 S cm^-1 and an S of 44.0 ± 1.7 μV K^-1 at a MoS₂/SWCNT mass ratio of 15:100. As a demonstration, a thermoelectric device composed of three pairs of p-n junctions was prepared, which exhibited a maximum output power of 0.43 μW at a temperature gradient of 50 K. Therefore, this work offers a simple method of enhancing the thermoelectric properties of SWCNT-based materials.

Sb2Te3 nanoparticle-containing single-walled carbon nanotube films coated with Sb2Te3 electrodeposited layers for thermoelectric applications

Single-walled carbon nanotubes (SWCNTs) are promising thermoelectric materials owing to their flexibility and excellent durability when exposed to heat and chemicals. Thus, they are expected to be used in power supplies for various sensors. However, their thermoelectric performances are inferior to those of inorganic thermoelectric materials. To improve the thermoelectric performance while maintaining the excellent characteristics of SWCNTs, a novel approach to form inorganic thermoelectric layers on the SWCNT bundle surfaces using electrodeposition is proposed. We synthesized Sb₂Te₃ nanoparticle-containing SWCNT films and coated them with electrodeposited Sb₂Te₃ layers. The Sb₂Te₃ nanoparticles were synthesized via a spontaneous redox reaction, which were then added to a SWCNT dispersion solution, and films were produced via vacuum filtration. At higher nanoparticle contents in the films, the Sb₂Te₃ electrodeposited layers completely covered the SWCNT bundles owing to the increase in the concentration of precursor ions near the SWCNT bundle surface, which in turn was the result of melted nanoparticles. The thermoelectric performance improved, and the maximum power factor at approximately 25 °C was 59.5 µW/(m K²), which was 4.7 times higher than that of the normal SWCNT film. These findings provide valuable insights for designing and fabricating high-performance flexible thermoelectric materials.

High thermoelectric performance of flexible nanocomposite films based on Bi2Te3 nanoplates and carbon nanotubes selected using ultracentrifugation

Thermoelectric generators with flexibility and high performance near 300 K have the potential to be employed in self-supporting power supplies for Internet of Things (IoT) devices. Bismuth telluride (Bi₂Te₃) exhibits high thermoelectric performance, and single-walled carbon nanotubes (SWCNTs) show excellent flexibility. Therefore, composites of Bi₂Te₃ and SWCNTs should exhibit an optimal structure and high performance. In this study, flexible nanocomposite films based on Bi₂Te₃ nanoplates and SWCNTs were prepared by drop casting on a flexible sheet, followed by thermal annealing. Bi₂Te₃ nanoplates were synthesized using the solvothermal method, and SWCNTs were synthesized using the super-growth method. To improve the thermoelectric properties of the SWCNTs, ultracentrifugation with a surfactant was performed to selectively obtain suitable SWCNTs. This process selects thin and long SWCNTs but does not consider the crystallinity, chirality distribution, and diameters. A film consisting of Bi₂Te₃ nanoplates and the thin and long SWCNTs exhibited high electrical conductivity, which was six times higher than that of a film with SWCNTs obtained without ultracentrifugation; this is because the SWCNTs uniformly connected the surrounding nanoplates. The power factor was 6.3 μW/(cm K²), revealing that this is one of the best-performing flexible nanocomposite films. The findings of this study can support the application of flexible nanocomposite films in thermoelectric generators to provide self-supporting power supplies for IoT devices.

Photothermal Effects and Heat Conduction in Nanogranular Silicon Films

We present results on the photothermal (PT) and heat conductive properties of nanogranular silicon (Si) films synthesized by evaporation of colloidal droplets (drop-casting) of 100 ± 50 nm-sized crystalline Si nanoparticles (NP) deposited on glass substrates. Simulations of the absorbed light intensity and photo-induced temperature distribution across the Si NP films were carried out by using the Finite difference time domain (FDTD) and finite element mesh (FEM) modeling and the obtained data were compared with the local temperatures measured by micro-Raman spectroscopy and then was used for determining the heat conductivities k in the films of various thicknesses. The cubic-to-hexagonal phase transition in Si NP films caused by laser-induced heating was found to be heavily influenced by the film thickness and heat-conductive properties of glass substrate, on which the films were deposited. The k values in drop-casted Si nanogranular films were found to be in the range of lowest k of other types of nanostructurely voided Si films due to enhanced phonon scattering across inherently voided topology, weak NP-NP and NP-substrate interface bonding within nanogranular Si films.

Evaluation of Thermoelectric Performance of Bi2Te3 Films as a Function of Temperature Increase Rate during Heat Treatment

Thin film thermoelectric generators are expected to be applied as power supplies for various Internet of Thing devices owing to their small size and flexible structure. However, the primary challenges of thin film thermoelectric generators are to improve their thermoelectric performance and reduce their manufacturing cost. Hence, Bi2Te3 thin films were deposited using direct current magnetron sputtering, followed by heat treatment at 573 K with different temperature increase rates ranging from 4 to 16 K/min. The in-plane Seebeck coefficient and electrical conductivity were measured at approximately 293 K. The in-plane thermal conductivity was calculated using the models to determine the power factor (PF) and dimensionless figure of merit (ZT). The temperature increase rate clearly affected the atomic composition, crystal orientation, and lattice strains, but not the crystallite size. The PF and dimensionless ZT increased as the temperature increase rate increased. The highest PF of 17.5 µW/(cm·K2) and ZT of 0.48 were achieved at a temperature increase rate of 16 K/min, while the unannealed thin film exhibited the lowest PF of 0.7 µW/(cm·K2) and ZT of 0.05. Therefore, this study demonstrated a method to enhance the thermoelectric performance of Bi2Te3 thin films by heat treatment at the appropriate temperature increase rate.