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Kundale SS, Kamble GU, Patil PP, Patil SL, Rokade KA, Khot AC, Nirmal KA, Kamat RK, Kim KH, An HM, Dongale TD, Kim TG. Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1879. [PMID: 37368309 DOI: 10.3390/nano13121879] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/03/2023] [Revised: 06/09/2023] [Accepted: 06/13/2023] [Indexed: 06/28/2023]
Abstract
Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent memory retention, compatibility with 3D integration, in-memory computing capabilities, and ease of fabrication. Electrochemical synthesis is the most widespread technique for the fabrication of state-of-the-art memory devices. The present review article summarizes the electrochemical approaches that have been proposed for the fabrication of switching, memristor, and memristive devices for memory storage, neuromorphic computing, and sensing applications, highlighting their various advantages and performance metrics. We also present the challenges and future research directions for this field in the concluding section.
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Affiliation(s)
- Somnath S Kundale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Girish U Kamble
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Pradnya P Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Snehal L Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kasturi A Rokade
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Atul C Khot
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur 416004, India
- Department of Physics, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai 400032, India
| | - Kyeong Heon Kim
- Department of Convergence Electronic Engineering, Gyeongsang National University, Jinjudae-ro 501, Jinju 52828, Republic of Korea
| | - Ho-Myoung An
- Department of Electronics, Osan University, 45, Cheonghak-ro, Osan-si 18119, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-dong, Seoul 02841, Republic of Korea
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Wang L, Wang Y, Wen D. Tunable biological nonvolatile multilevel data storage devices. Phys Chem Chem Phys 2021; 23:24834-24841. [PMID: 34719695 DOI: 10.1039/d1cp04622e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The speed with which electronic products are updated is continuously increasing. Consequently, since waste electronic products can cause serious environmental pollution, the demand for electronic products made of biological materials is becoming increasingly urgent. Although biological memristors have significant advantages, their electrical characteristics still do not meet the requirements to be used in future nonvolatile memories. Therefore, how to control their electrical characteristics has become a popular topic of research. In this study, tunable biomemristors with an Al/tussah blood (TB)-carbon nanotube (CNT)/indium tin oxide (ITO)/glass structure were fabricated. Such a device exhibits stable bipolar resistance switching behavior and good retention characteristics (104 s). Experimental results show that the ON/OFF current ratio can be effectively controlled by modifying the CNT concentration in the TB-CNT composite film. Multilevel (8 levels, 3 bits per cell) storage capabilities can be achieved in the device by controlling its compliance current in order to achieve high-density storage. The resistance switching behavior originates from the formation and rupture of conductive oxygen vacancy filaments. TB is a promising natural biomaterial in the field of green electronics, and this research could blaze a new trail for the development of biological memory devices. Biomemristors with multilevel resistance states can be used as electronic synapses and are one of the choices for simulating biological synapses.
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Affiliation(s)
- Lu Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Yuting Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
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Kim Y, Park CH, An JS, Choi SH, Kim TW. Biocompatible artificial synapses based on a zein active layer obtained from maize for neuromorphic computing. Sci Rep 2021; 11:20633. [PMID: 34667193 PMCID: PMC8526676 DOI: 10.1038/s41598-021-00076-1] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/21/2021] [Accepted: 09/29/2021] [Indexed: 11/21/2022] Open
Abstract
Artificial synaptic devices based on natural organic materials are becoming the most desirable for extending their fields of applications to include wearable and implantable devices due to their biocompatibility, flexibility, lightweight, and scalability. Herein, we proposed a zein material, extracted from natural maize, as an active layer in an artificial synapse. The synaptic device exhibited notable digital-data storage and analog data processing capabilities. Remarkably, the zein-based synaptic device achieved recognition accuracy of up to 87% and exhibited clear digit-classification results on the learning and inference test. Moreover, the recognition accuracy of the zein-based artificial synapse was maintained within a difference of less than 2%, regardless of mechanically stressed conditions. We believe that this work will be an important asset toward the realization of wearable and implantable devices utilizing artificial synapses.
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Affiliation(s)
- Youngjin Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Chul Hyeon Park
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jun Seop An
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Seung-Hye Choi
- Center for Neuroscience, Brain Science Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
| | - Tae Whan Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea.
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