Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

Self-Powered Sensors Made with Fabric-Based Electrodes and a Conductive Coating

Amidst the growing challenge of meeting global energy demands with conventional sources, self-powered devices offer promising solution. Flexible and stretchable electronics are pivotal in wearable technology, enhancing the scope and functionality of these devices. This study employs potassium sodium niobite-lithium antimonate (K0.5Na0.5NbO3-LiSbO3) nanoparticles as fillers in polyvinylidene fluoride (PVDF) to fabricate piezoelectric thin films. These films are integrated with fabric-based electrodes to develop high-performance, flexible self-powered sensors. The sensor comprises a fabric-based electrode with polypyrrole (PPy) coated on plain nylon fabric, a 0.93KNN-0.07LS/PVDF composite piezoelectric thin film, and a protective PET layer. Results demonstrate that the 0.93KNN-0.07LS/PVDF-PPy/nylon composite sensors exhibit a stable piezoelectric output. Under 6 Hz and 10 N excitation, the piezoelectric output reaches approximately 6.1 V upon pressing. Additionally, the device shows good linear sensitivity in the 2-20 N pressure range and produces clear, regular output waveforms under cyclic pressures of varying frequencies and amplitudes, indicating excellent response repeatability. Even after extensive bending, twisting, and 5000 pressing cycles, the sensors maintain considerable cyclic stability, demonstrating high durability. These tests collectively indicate that the developed sensors possess high sensitivity, flexibility, durability, stability, and significant self-powered potential. This research provides a reference for the next generation of textile-based electrodes and offers potential strategies for flexible, wearable applications.

Silicon-Compatible Memristive Devices Tailored by Laser and Thermal Treatments

Nowadays, memristors are of considerable interest to researchers and engineers due to the promise they hold for the creation of power-efficient memristor-based information or computing systems. In particular, this refers to memristive devices based on the resistive switching phenomenon, which in most cases are fabricated in the form of metal–insulator–metal structures. At the same time, the demand for compatibility with the standard fabrication process of complementary metal–oxide semiconductors makes it relevant from a practical point of view to fabricate memristive devices directly on a silicon or SOI (silicon on insulator) substrate. Here we have investigated the electrical characteristics and resistive switching of SiOx- and SiNx-based memristors fabricated on SOI substrates and subjected to additional laser treatment and thermal treatment. The investigated memristors do not require electroforming and demonstrate a synaptic type of resistive switching. It is found that the parameters of resistive switching of SiOx- and SiNx-based memristors on SOI substrates are remarkably improved. In particular, the laser treatment gives rise to a significant increase in the hysteresis loop in I–V curves of SiNx-based memristors. Moreover, for SiOx-based memristors, the thermal treatment used after the laser treatment produces a notable decrease in the resistive switching voltage.