Technology agnostic frequency characterization methodology for memristors

Assessing Barrier Function in Psoriasis and Cornification Models of Artificial Skin Using Non-Invasive Impedance Spectroscopy

Reconstructed epidermal equivalents (REEs) consist of two distinct cell layers - the stratum corneum (SC) and the keratinocyte layer (KL). The interplay of these layers is particularly crucial in pruritic inflammatory disorders, like psoriasis, where a defective SC barrier is associated with immune dysregulation. However, independent evaluation of the skin barrier function of the SC and KL in REEs is highly challenging because of the lack of quantitative methodologies that do not disrupt the counter layer. Here, a non-invasive impedance spectroscopy technique is introduced for dissecting the distinct contributions of the SC and KL to overall skin barrier function without disrupting the structure. These findings, inferred from the impedance spectra, highlight the individual barrier resistances and maturation levels of each layer. Using an equivalent circuit model, a correlation between impedance parameters and specific skin layers, offering insights beyond traditional impedance methods that address full-thickness skin only is established. This approach successfully detects subtle changes, such as increased paracellular permeability due to mild irritants and the characterization of an immature SC in psoriatic models. This research has significant implications, paving the way for detailed mechanistic investigations and fostering the development of therapies for skin irritation and inflammatory disorders.

Selectively biased tri-terminal vertically-integrated memristor configuration

Memristors, when utilized as electronic components in circuits, can offer opportunities for the implementation of novel reconfigurable electronics. While they have been used in large arrays, studies in ensembles of devices are comparatively limited. Here we propose a vertically stacked memristor configuration with a shared middle electrode. We study the compound resistive states presented by the combined in-series devices and we alter them either by controlling each device separately, or by altering the full configuration, which depends on selective usage of the middle floating electrode. The shared middle electrode enables a rare look into the combined system, which is not normally available in vertically stacked devices. In the course of this study, it was found that separate switching of individual devices carries over its effects to the Complete device (albeit non-linearly), enabling increased resistive state range, which leads to a larger number of distinguishable states (above SNR variance limits) and hence enhanced device memory. Additionally, by applying a switching stimulus to the external electrodes it is possible to switch both devices simultaneously, making the entire configuration a voltage divider with individual memristive components. Through usage of this type of configuration and by taking advantage of the voltage division, it is possible to surge-protect fragile devices, while it was also found that simultaneous reset of stacked devices is possible, significantly reducing the required reset time in larger arrays.