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Yoon J, Kim KS, Hong WK. Thermochromic Vanadium Dioxide Nanostructures for Smart Windows and Radiative Cooling. Chemistry 2024; 30:e202400826. [PMID: 38818667 DOI: 10.1002/chem.202400826] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 05/29/2024] [Accepted: 05/29/2024] [Indexed: 06/01/2024]
Abstract
The pursuit of energy-saving materials and technologies has garnered significant attention for their pivotal role in mitigating both energy consumption and carbon emissions. In particular, thermochromic windows in buildings offer energy-saving potential by adjusting the transmittance of solar irradiation in response to temperature changes. Radiative cooling (RC), radiating thermal heat from an object surface to the cold outer space, also offers a potential way for cooling without energy consumption. Accordingly, smart window and RC technologies based on thermochromic materials can play a crucial role in improving energy efficiency and reducing energy consumption in buildings in response to the surrounding temperature. Vanadium dioxide (VO2) is a promising thermochromic material for energy-saving smart windows and RC due to its reversible metal-to-insulator transition, accompanying large changes in its optical properties. This review provides a brief summary of synthesis methods of VO2 nanostructures based on nanoparticles and thin films. Moreover, this review emphasizes and summarizes modulation strategies focusing on doping, thermal processing, and structure manipulation to improve and regulate the thermochromic and emissivity performance of VO2 for smart window and RC applications. In last, the challenges and recent advances of VO2-based smart window and RC applications are briefly presented.
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Affiliation(s)
- Jongwon Yoon
- Energy & Environment Materials Research Division, Korea Institute of Materials Science, Changwon-si, Gyeongsangnam-do 51508, Republic of Korea
| | - Kwang-Seok Kim
- Carbon & Light Materials Application Group, Korea Institute of Industrial Technology, 222Palbok-ro, Deokjin-gu, Jeonju 54853, Republic of Korea
| | - Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, 169-148 Gwahak-ro, Yuseong-gu, Daejeon 34133, Republic of Korea
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Guo X, Liu X, Zafar Z, Cheng G, Li Y, Nan H, Lin L, Zou J. Effects of oxygen vacancies and interfacial strain on the metal-insulator transition of VO 2 nanobeams. Phys Chem Chem Phys 2024; 26:10737-10745. [PMID: 38516809 DOI: 10.1039/d3cp06040c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/23/2024]
Abstract
The role of oxygen vacancies and interfacial strain on the metal-insulator transition (MIT) behavior of high-quality VO2 nanobeams (NBs) synthesized on SiO2/Si substrates employing V2O5 as a precursor has been investigated in this research. Selective oxygen vacancies have been generated by argon plasma irradiation. The MIT is progressively suppressed as the duration of plasma processing increases; in addition, the temperature of MIT (TMIT) drops by up to 95 K relative to the pristine VO2 NBs. Incorporating oxygen vacancies into VO2 may increase its electron concentration, which might shift the Fermi levels upward, strengthen the electronic orbital overlap of the V-V chains, and further stabilize the metallic phase at lower temperatures, based on first-principles calculations. Furthermore, in order to evaluate the influence of substrate-induced strain in our situation, the MIT in two distinct types of VO2 NB samples is examined without metal contacts by using the distinctive light scattering characteristics of the metal (M) and insulator (I) phases (i.e., M/I domains) by optical microscopy. It is found that the domain structures in the "clamped" NBs persisted up to ∼453 K, while the "released" NBs (transferred to a new substrate) did not exhibit any domain structures and turned into an entirely M phase with a dark contrast above ∼348 K. When combined with first-principles calculations, the electronic orbital occupancy in the rutile phase contributes to explaining the interfacial strain-induced modulation of MIT. The current findings shed light on how interfacial strain and oxygen vacancies impact MIT behavior. It also suggests several types of control strategies for MIT in VO2 NBs, which are essential for a broader spectrum of VO2 NB applications.
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Affiliation(s)
- Xitao Guo
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Xin Liu
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Zainab Zafar
- Experimental Physics Division, National Centre for Physics, Islamabad 44000, Pakistan
| | - Guiquan Cheng
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Yunhai Li
- Key Laboratory of Artificial Micro- and Nanostructures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
| | - Haiyan Nan
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122, China.
| | - Lianghua Lin
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
| | - Jijun Zou
- Jiangxi Engineering Province Engineering Research Center of New Energy Technology and Equipment, East China University of Technology, Nanchang 330013, China
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Lerttraikul K, Rattanasakuldilok W, Pakornchote T, Bovornratanaraks T, Klanurak I, Taychatanapat T, Srathongsian L, Seriwatanachai C, Kanjanaboos P, Chatraphorn S, Kittiwatanakul S. Metal-insulator transition effect on Graphene/VO[Formula: see text] heterostructure via temperature-dependent Raman spectroscopy and resistivity measurement. Sci Rep 2024; 14:4545. [PMID: 38402274 DOI: 10.1038/s41598-024-54844-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Accepted: 02/17/2024] [Indexed: 02/26/2024] Open
Abstract
High-quality VO[Formula: see text] films were fabricated on top of c-Al[Formula: see text]O[Formula: see text] substrates using Reactive Bias Target Ion Beam Deposition (RBTIBD) and the studies of graphene/VO[Formula: see text] heterostructure were conducted. Graphene layers were placed on top of [Formula: see text] 50 and [Formula: see text] 100 nm VO[Formula: see text]. The graphene layers were introduced using mechanical exfoliate and CVD graphene wet-transfer method to prevent the worsening crystallinity of VO[Formula: see text], to avoid the strain effect from lattice mismatch and to study how VO[Formula: see text] can affect the graphene layer. Slight increases in graphene/VO[Formula: see text] T[Formula: see text] compared to pure VO[Formula: see text] by [Formula: see text] 1.9 [Formula: see text]C and [Formula: see text] 3.8 [Formula: see text]C for CVD graphene on 100 and 50 nm VO[Formula: see text], respectively, were observed in temperature-dependent resistivity measurements. As the strain effect from lattice mismatch was minimized in our samples, the increase in T[Formula: see text] may originate from a large difference in the thermal conductivity between graphene and VO[Formula: see text]. Temperature-dependent Raman spectroscopy measurements were also performed on all samples, and the G-peak splitting into two peaks, G[Formula: see text] and G[Formula: see text], were observed on graphene/VO[Formula: see text] (100 nm) samples. The G-peak splitting is a reversible process and may originates from in-plane asymmetric tensile strain applied under the graphene layer due to the VO[Formula: see text] phase transition mechanism. The 2D-peak measurements also show large blue-shifts around 13 cm[Formula: see text] at room temperature and slightly red-shifts trend as temperature increases for 100 nm VO[Formula: see text] samples. Other electronic interactions between graphene and VO[Formula: see text] are expected as evidenced by 2D-peak characteristic observed in Raman measurements. These findings may provide a better understanding of graphene/VO[Formula: see text] and introduce some new applications that utilize the controllable structural properties of graphene via the VO[Formula: see text] phase transition.
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Affiliation(s)
- Kittitat Lerttraikul
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand
| | - Wirunchana Rattanasakuldilok
- Department of Physics, Accelerator Laboratory, University of Jyväskylä, P.O. Box 35(YFL), 40014, Jyväskylä, Finland
| | - Teerachote Pakornchote
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand
| | - Thiti Bovornratanaraks
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand
| | - Illias Klanurak
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand
| | - Thiti Taychatanapat
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand
| | - Ladda Srathongsian
- School of Materials Science and Innovation, Faculty of Science, Mahidol University, Nakhon Pathom, 73170, Thailand
| | - Chaowaphat Seriwatanachai
- School of Materials Science and Innovation, Faculty of Science, Mahidol University, Nakhon Pathom, 73170, Thailand
| | - Pongsakorn Kanjanaboos
- School of Materials Science and Innovation, Faculty of Science, Mahidol University, Nakhon Pathom, 73170, Thailand
| | - Sojiphong Chatraphorn
- Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok, 10330, Thailand
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Yoon J, Hong WK, Kim Y, Park SY. Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications. SENSORS (BASEL, SWITZERLAND) 2023; 23:6715. [PMID: 37571499 PMCID: PMC10422301 DOI: 10.3390/s23156715] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 07/21/2023] [Accepted: 07/23/2023] [Indexed: 08/13/2023]
Abstract
Vanadium dioxide (VO2) is one of the strongly correlated materials exhibiting a reversible insulator-metal phase transition accompanied by a structural transition from a low-temperature monoclinic phase to high-temperature rutile phase near room temperature. Due to the dramatic change in electrical resistance and optical transmittance of VO2, it has attracted considerable attention towards the electronic and optical device applications, such as switching devices, memory devices, memristors, smart windows, sensors, actuators, etc. The present review provides an overview of several methods for the synthesis of nanostructured VO2, such as solution-based chemical approaches (sol-gel process and hydrothermal synthesis) and gas or vapor phase synthesis techniques (pulsed laser deposition, sputtering method, and chemical vapor deposition). This review also presents stoichiometry, strain, and doping engineering as modulation strategies of physical properties for nanostructured VO2. In particular, this review describes ultraviolet-visible-near infrared photodetectors, optical switches, and color modulators as optical sensing applications associated with nanostructured VO2 materials. Finally, current research trends and perspectives are also discussed.
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Affiliation(s)
- Jongwon Yoon
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;
| | - Woong-Ki Hong
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea;
| | - Yonghun Kim
- Department of Energy & Electronic Materials, Surface & Nano Materials Division, Korea Institute of Materials Science, Changwon 51508, Republic of Korea;
| | - Seung-Young Park
- Center for Scientific Instrumentation, Korea Basic Science Institute, Daejeon 34133, Republic of Korea;
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Plugaru R, Mihalache I, Romaniţan C, Comanescu F, Vulpe S, Craciun G, Plugaru N, Djourelov N. Light-Sensing Properties of Amorphous Vanadium Oxide Films Prepared by RF Sputtering. SENSORS (BASEL, SWITZERLAND) 2023; 23:1759. [PMID: 36850358 PMCID: PMC9964540 DOI: 10.3390/s23041759] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Revised: 01/30/2023] [Accepted: 02/01/2023] [Indexed: 06/18/2023]
Abstract
In this study we analyzed the structure and light-sensing properties of as-deposited vanadium oxide thin films, prepared by RF sputtering in different Ar:O2 flow rate conditions, at low temperature (e.g., 65 °C). X-ray diffraction (XRD), Scanning Electron Microscopy (SEM-EDX), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were employed to analyze the film microstructure, composition and the oxidation states of vanadium ions. The SEM micrographs evidence VxOy films with smooth surfaces, whereas the XRD patterns show their amorphous structure. Raman spectra indicate an increased structural disorder in the films deposited in Ar:O2 flow comparatively with those deposited solely in Ar flow. The XPS data suggest the modification of the oxidation state from V4+ to V5+, thus proving the formation of the V2O5 phase when increasing the oxygen content, which further affects the films' optical properties. We observed a good stability of the photogenerated current in Si/SiO2/VxOy/TiN heterostructures upon excitation with pulses of UV (360 nm), VIS (white light) and NIR (860 nm) light. The responsivity, detectivity and linear dynamic range parameters increase with the O/V ratio in the VxOy films, reaching comparable values with photodetectors based on crystalline V2O5 or VO2.
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Affiliation(s)
- Rodica Plugaru
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Iuliana Mihalache
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Cosmin Romaniţan
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Florin Comanescu
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Silviu Vulpe
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Gabriel Craciun
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Neculai Plugaru
- National Institute for Research and Development in Microtechnologies-IMT Bucharest, Erou Iancu Nicolae 126 A, 077190 Voluntari, Ilfov, Romania
| | - Nikolay Djourelov
- Extreme Light Infrastructure-Nuclear Physics (ELI-NP), “Horia Hulubei” National R&D Institute for Physics and Nuclear Engineering (IFIN-HH), 077125 Magurele, Romania
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Wang S, Wu L, Zhang H, Wang Z, Qin Q, Wang X, Lu Y, Li L, Li M. Facile Synthesis of Two Dimensional (2D) V 2O 5 Nanosheets Film towards Photodetectors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:8313. [PMID: 36499812 PMCID: PMC9740591 DOI: 10.3390/ma15238313] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 11/17/2022] [Accepted: 11/21/2022] [Indexed: 06/17/2023]
Abstract
Most of the studies focused on V2O5 have been devoted to obtaining specific morphology and microstructure for its intended applications. Two dimensional (2D) V2O5 has the most valuable structure because of its unique planar configuration that can offer more active sites. In this study, a bottom-up and low-cost method that is hydrothermal combined with spin-coating and subsequent annealing was developed to prepare 2D V2O5 nanosheets film on quartz substrate. First, VOOH nanosheets were prepared by the hydrothermal method using V2O5 powders and EG as raw materials. Further, V2O5 nanosheets with an average lateral size over 500 nm and thickness less than 10 nm can be prepared from the parent VOOH nanosheets by annealing at 350 °C for 15 min in air. The prepared V2O5 nanosheets film was assembled of multiple nanosheets. The structural, morphological, microstructural and optical properties of the films were respective investigated by XRD, SEM, TEM and UV-Vis. The photodetector based on V2O5 nanosheets film shows good photoresponse with a response time of 2.4 s and a recovery time of 4.7 s.
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Affiliation(s)
- Shaotian Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Liangfei Wu
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
| | - Hui Zhang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Zihan Wang
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Qinggang Qin
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Xi Wang
- State Key Laboratory of Pulsed Power Laser Technology, Anhui Laboratory of Advanced Laser Technology, Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, National University of Defense Technology, Hefei 230037, China
| | - Yuan Lu
- State Key Laboratory of Pulsed Power Laser Technology, Anhui Laboratory of Advanced Laser Technology, Infrared and Low Temperature Plasma Key Laboratory of Anhui Province, National University of Defense Technology, Hefei 230037, China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
| | - Ming Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
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Xu D, Zhu X, An J, Chen G, Bao J, Xu X. UV-vis-IR Broad Spectral Photodetectors Based on VO 2-ZnO Nanocrystal Films. ACS OMEGA 2022; 7:37078-37084. [PMID: 36312338 PMCID: PMC9607667 DOI: 10.1021/acsomega.2c02549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/24/2022] [Accepted: 07/25/2022] [Indexed: 06/16/2023]
Abstract
As a narrow band semiconductor at room temperature and a metallic material above ∼68 °C, functional VO2 films are widely investigated for smart windows, whereas their potential for ultraviolet-visible-infrared (UV-vis-IR) broad spectral photodetectors has not been efficiently studied. In this report, photodetectors based on VO2-ZnO nanocrystal composite films were prepared by nanocrystal-mist (NC-mist) deposition. An enhanced photodetection switching ratio was achieved covering the ultraviolet to infrared wavelength. Due to the synergetic effect of nanosize, surface, phase transition, percolation threshold, and the band structure of the heterojunction, the transfer and transport of photogenerated carriers modulate the device performance. This study probes new chances of applying VO2-semiconductor-based nanocomposites for broad spectral photodetectors.
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Guo X, Tan Y, Hu Y, Zafar Z, Liu X, Feng L, Zou J. Effect of microplate size on the semiconductor–metal transition in VO 2 thin films. NEW J CHEM 2022. [DOI: 10.1039/d2nj01324j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The degree of changes in resistivity (Δρ) becomes more prominent as the VO2 film microplate size grows, which is primarily attributed to a reduced probability of electron scattering with decreasing grain boundary density.
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Affiliation(s)
- Xitao Guo
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
| | - Yonghao Tan
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
| | - Yupei Hu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
| | - Zainab Zafar
- National Centre for Physics, Islamabad, 44000, Pakistan
| | - Xin Liu
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
| | - Lin Feng
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
| | - Jijun Zou
- School of Mechanical and Electronic Engineering, East China University of Technology, Nanchang 330013, China
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